公开(公告)号：US09418749B2

公开(公告)日：2016-08-16

申请号：US14880820

申请日：2015-10-12

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sang-Wan Nam ,  Won-Taeck Jung

IPC: G11C11/34 ,  G11C16/26 ,  G11C16/04 ,  G11C16/34 ,  G11C16/24

CPC classification number: G11C16/0483 ,  G11C16/08 ,  G11C16/10 ,  G11C16/24 ,  G11C16/26 ,  G11C16/3427

Abstract: A nonvolatile memory device performs a read operation comprising first and second intervals. In the first interval the device applies a turn-on voltage to string selection lines and ground selection lines connected to the string selection transistors and the ground selection transistors, respectively. In the second interval, the device applies a turn-off voltage to unselected string selection lines and unselected ground selection lines while continuing to apply the turn-on voltage to a selected string selection line and a selected ground selection line. In both the first and second intervals, the device applies a first read voltage to a selected wordline connected to memory cells to be read by the read operation and applying a second read voltage to unselected wordlines among connected to memory cells not to be read by the read operation.

公开(公告)号：US09412456B2

公开(公告)日：2016-08-09

申请号：US14523850

申请日：2014-10-25

Applicant: Samsung Electronics Co., Ltd.

Inventor： DongHun Kwak ,  Sang-Won Park ,  Won-Taeck Jung

IPC: G11C16/04 ,  G11C16/10 ,  G11C16/34 ,  H01L27/115 ,  G11C16/08 ,  G11C16/26

CPC classification number: G11C16/10 ,  G11C16/0483 ,  G11C16/08 ,  G11C16/26 ,  G11C16/3459 ,  H01L27/1157 ,  H01L27/11582

Abstract: Disclosed are a program method and a nonvolatile memory device. The method includes receiving program data to be programmed in memory cells; reading the memory cells to judge an erase state and at least one program state; performing a state read operation in which the at least one program state is read using a plurality of state read voltages; and programming the program data in the memory cells using a plurality of verification voltages having different levels according to a result of the state read operation. Also disclosed are methods using a plurality of verification voltages selected based on factors which may affect a threshold voltage shift or other characteristic representing the data of a memory cell after programming.

Abstract translation: 公开了一种程序方法和非易失性存储装置。 该方法包括接收要在存储器单元中编程的程序数据; 读取存储单元以判断擦除状态和至少一个程序状态; 执行使用多个状态读取电压读取所述至少一个程序状态的状态读取操作; 以及根据状态读取操作的结果，使用具有不同电平的多个验证电压对存储器单元中的程序数据进行编程。 还公开了使用基于可能影响阈值电压偏移的因素而选择的多个验证电压的方法或者在编程之后表示存储器单元的数据的其他特性的方法。

公开(公告)号：US09281070B2

公开(公告)日：2016-03-08

申请号：US14644247

申请日：2015-03-11

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Sang-Wan Nam ,  Won-Taeck Jung ,  Junghoon Park

IPC: G11C16/16 ,  G11C16/14 ,  G11C16/04 ,  G11C16/08 ,  H01L27/115 ,  G11C16/34

CPC classification number: G11C16/14 ,  G11C16/0466 ,  G11C16/0483 ,  G11C16/08 ,  G11C16/16 ,  G11C16/3418 ,  G11C16/344 ,  G11C16/3445 ,  H01L27/115

Abstract: An erase method of a nonvolatile memory includes supplying an erase voltage to a substrate, supplying a selection word line voltage to word lines connected with a selected sub-block within a memory block of the nonvolatile memory, supplying a non-selection word line voltage to word lines connected with an unselected sub-block within the memory block during a first delay time from a point of time when the erase voltage is supplied, and thereafter floating the word lines connected with the unselected sub-block.