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    Three-dimensional nonvolatile memory and method of performing read operation in the nonvolatile memory
    1.
    发明授权
    Three-dimensional nonvolatile memory and method of performing read operation in the nonvolatile memory 有权

    公开(公告)号：US11222697B2

    公开(公告)日：2022-01-11

    申请号：US17023002

    申请日：2020-09-16

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Sang-Wan Nam ,  Won-Taeck Jung

    IPC: G11C16/06 ,  G11C16/04 ,  G11C16/34 ,  G11C16/10 ,  G11C16/26 ,  G11C16/08 ,  G11C16/24

    Abstract: A nonvolatile memory device performs a read operation comprising first and second intervals. In the first interval the device applies a turn-on voltage to string selection lines and ground selection lines connected to the string selection transistors and the ground selection transistors, respectively. In the second interval, the device applies a turn-off voltage to unselected string selection lines and unselected ground selection lines while continuing to apply the turn-on voltage to a selected string selection line and a selected ground selection line. In both the first and second intervals, the device applies a first read voltage to a selected wordline connected to memory cells to be read by the read operation and applying a second read voltage to unselected wordlines among connected to memory cells not to be read by the read operation.

    Three-dimensional nonvolatile memory and related read method designed to reduce read disturbance
    4.
    发明授权
    Three-dimensional nonvolatile memory and related read method designed to reduce read disturbance 有权

    公开(公告)号：US10803947B2

    公开(公告)日：2020-10-13

    申请号：US16801214

    申请日：2020-02-26

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Sang-Wan Nam ,  Won-Taeck Jung

    IPC: G11C16/04 ,  G11C16/34 ,  G11C16/24 ,  G11C16/26 ,  G11C16/08 ,  G11C16/10

    Abstract: A nonvolatile memory device performs a read operation comprising first and second intervals. In the first interval the device applies a turn-on voltage to string selection lines and ground selection lines connected to the string selection transistors and the ground selection transistors, respectively. In the second interval, the device applies a turn-off voltage to unselected string selection lines and unselected ground selection lines while continuing to apply the turn-on voltage to a selected string selection line and a selected ground selection line. In both the first and second intervals, the device applies a first read voltage to a selected wordline connected to memory cells to be read by the read operation and applying a second read voltage to unselected wordlines among connected to memory cells not to be read by the read operation.

    Nonvolatile memory device, storage device having the same, operating method thereof
    5.
    发明授权
    Nonvolatile memory device, storage device having the same, operating method thereof 有权
    非易失性存储装置，具有其的存储装置，其操作方法

    公开(公告)号：US09570176B2

    公开(公告)日：2017-02-14

    申请号：US14668544

    申请日：2015-03-25

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Won-Taeck Jung ,  Tae-Hong Kwon ,  Tae-Min Park ,  Ohsuk Kwon

    IPC: G11C11/34 ,  G11C16/10 ,  G11C16/26 ,  G11C7/04 ,  G11C8/12 ,  G11C16/08

    CPC classification number: G11C16/10 ,  G11C7/04 ,  G11C8/12 ,  G11C16/08 ,  G11C16/26

    Abstract: An operating method of a nonvolatile memory device includes determining whether a memory block is a selected block, and when the memory block is not the selected block, determining whether the memory block shares a block word line with the selected block. The method further includes applying an unselected block word line voltage to word lines of the memory block when the memory block shares the block word line with the selected block, and floating the word lines of the memory block when the memory block does not share the block word line with the selected block.

    Abstract translation: 非易失性存储器件的操作方法包括确定存储器块是否是所选择的块，以及当存储器块不是所选择的块时，确定存储器块是否与所选择的块共享块字线。 该方法还包括当存储器块与所选择的块共享块字线时将未选择的块字线电压施加到存储器块的字线，并且当存储器块不共享块时浮置存储器块的字线 字线与所选块。

    Non-volatile memory device and an operation method thereof
    6.
    发明授权
    Non-volatile memory device and an operation method thereof 有权

    公开(公告)号：US11450389B2

    公开(公告)日：2022-09-20

    申请号：US17195824

    申请日：2021-03-09

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Jun-Ho Seo ,  Jung Ho Lee ,  Dae Sik Ham ,  Gi Baek Kim ,  Sang Yong Yoon ,  Won-Taeck Jung

    IPC: G11C16/10 ,  G11C16/30 ,  G11C16/08 ,  G11C16/04 ,  G11C16/26

    Abstract: A non-volatile memory device including: a first string including a first string select transistor, a first memory cell and a first ground select transistor, a second string including a second string select transistor, a second memory cell and a second ground select transistor, and a controller to apply a pass voltage to a first string select line from a first time, apply a first read voltage to a first word line during a first read section from the first time to a second time, apply a first ground select line voltage to a first ground select line from the first time, apply a ground voltage to a second string select line, apply the first ground select line voltage to a second ground select line during a first control section, and apply a first common source line voltage to a common source line during the first control section.

    Three-dimensional nonvolatile memory and related read method designed to reduce read disturbance
    9.
    发明授权
    Three-dimensional nonvolatile memory and related read method designed to reduce read disturbance 有权

    公开(公告)号：US10043580B2

    公开(公告)日：2018-08-07

    申请号：US15790257

    申请日：2017-10-23

    Applicant: SAMSUNG ELECTRONICS CO., LTD.

    Inventor： Sang-Wan Nam ,  Won-Taeck Jung

    IPC: G11C16/04 ,  G11C16/10 ,  G11C16/26 ,  G11C16/34 ,  G11C16/08 ,  G11C16/24

    Abstract: A nonvolatile memory device performs a read operation comprising first and second intervals. In the first interval the device applies a turn-on voltage to string selection lines and ground selection lines connected to the string selection transistors and the ground selection transistors, respectively. In the second interval, the device applies a turn-off voltage to unselected string selection lines and unselected ground selection lines while continuing to apply the turn-on voltage to a selected string selection line and a selected ground selection line. In both the first and second intervals, the device applies a first read voltage to a selected wordline connected to memory cells to be read by the read operation and applying a second read voltage to unselected wordlines among connected to memory cells not to be read by the read operation.

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