公开(公告)号：US11193062B2

公开(公告)日：2021-12-07

申请号：US16825293

申请日：2020-03-20

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Garam Park ,  Tae Gon Kim ,  Nayoun Won ,  Shin Ae Jun ,  Soo Kyung Kwon ,  Seon-Yeong Kim ,  Shang Hyeun Park ,  Jooyeon Ahn ,  Yuho Won ,  Eun Joo Jang ,  Hyo Sook Jang

IPC: C09K11/88 ,  C09K11/62 ,  C09K11/70 ,  C09K11/56 ,  C09K11/02 ,  H01L27/32 ,  F21V8/00 ,  G02F1/1335 ,  G02F1/13357 ,  H05B33/14 ,  A61B6/06 ,  A61B6/00 ,  G01T7/00 ,  G21K1/02 ,  B82Y20/00 ,  B82Y40/00 ,  A61B6/02

Abstract: Disclosed are a quantum dot population including a plurality of cadmium free quantum dots, a quantum dot polymer composite including the same, and a display device including the same. The plurality of cadmium free quantum dots includes: a semiconductor nanocrystal core comprising indium and phosphorous, a first semiconductor nanocrystal shell disposed on the semiconductor nanocrystal core and comprising zinc and selenium, and a second semiconductor nanocrystal shell disposed on the first semiconductor nanocrystal shell and comprising zinc and sulfur, wherein an average particle size of the plurality of cadmium free quantum dots is greater than or equal to about 5.5 nm, a standard deviation of particle sizes of the plurality of cadmium free quantum dots is less than or equal to about 20% of the average particle size, and an average solidity of the plurality of cadmium free quantum dots is greater than or equal to about 0.85.

公开(公告)号：US11186767B2

公开(公告)日：2021-11-30

申请号：US16785821

申请日：2020-02-10

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jooyeon Ahn ,  Ha Il Kwon ,  Shang Hyeun Park ,  Nayoun Won ,  Eun Joo Jang ,  Shin Ae Jun

IPC: C09K11/02 ,  H01L51/50 ,  H05B33/14 ,  C09K11/70 ,  C09K11/88 ,  F21V8/00 ,  C09K11/06 ,  H01L51/00 ,  B82Y20/00 ,  B82Y40/00

Abstract: A quantum dot including a first ligand and a second ligand on a surface of the quantum dot, a composition or composite including the same, and a device including the same. The first ligand includes a compound represented by Chemical Formula 1 and the second ligand includes a compound represented by Chemical Formula 2: MAn  Chemical Formula 1 wherein M, n, and A are the same as defined in the specification; and wherein, R1, L1, Y1, R, k1, and k2 are the same as defined in the specification.

公开(公告)号：US11124702B2

公开(公告)日：2021-09-21

申请号：US16798948

申请日：2020-02-24

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Jihyun Min ,  Eun Joo Jang ,  Yongwook Kim ,  Garam Park

IPC: C09K11/02 ,  C09K11/66 ,  C09K11/88 ,  C08K3/16 ,  C09K11/61 ,  H01L27/32 ,  B82Y20/00 ,  B82Y40/00

Abstract: A quantum dot having a perovskite crystal structure and including a compound represented by Chemical Formula 1: ABX3+α  Chemical Formula 1 wherein, A is a Group IA metal selected from Rb, Cs, Fr, and a combination thereof, B is a Group IVA metal selected from Si, Ge, Sn, Pb, and a combination thereof, X is a halogen selected from F, Cl, Br, and I, BR4, or a combination thereof, and α is greater than 0 and less than or equal to about 3; and wherein the quantum dot has a size of about 1 nanometer to about 50 nanometers.

公开(公告)号：US11038136B2

公开(公告)日：2021-06-15

申请号：US16811637

申请日：2020-03-06

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Moon Gyu Han ,  Dae Young Chung ,  Kwanghee Kim ,  Eun Joo Jang ,  Chan Su Kim ,  Kun Su Park ,  Won Sik Yoon

IPC: H01L51/50 ,  H01L51/56

Abstract: An electroluminescent device includes a first electrode and a second electrode facing each other; an emission layer disposed between the first electrode and the second electrode and including a plurality of quantum dots and a first hole transporting material having a substituted or unsubstituted C4 to C20 alkyl group attached to a backbone structure; a hole transport layer disposed between the emission layer and the first electrode and including a second hole transporting material; and an electron transport layer disposed between the emission layer and the second electrode.

公开(公告)号：US10954440B2

公开(公告)日：2021-03-23

申请号：US16298108

申请日：2019-03-11

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Yuho Won ,  Sung Woo Kim ,  Jin A Kim ,  Jeong Hee Lee ,  Tae Hyung Kim ,  Eun Joo Jang

IPC: H01L51/50 ,  C09K11/88 ,  C09K11/02 ,  H05B33/14 ,  B82Y20/00 ,  B82Y40/00

Abstract: A quantum dot including: a core including a first semiconductor nanocrystal material including zinc, tellurium, and selenium; and a semiconductor nanocrystal shell disposed on the core, the semiconductor nanocrystal shell including zinc, selenium, and sulfur, wherein the quantum dot does not include cadmium, and in the quantum dot, a mole ratio of the sulfur with respect to the selenium is less than or equal to about 2.4:1. A production method of the quantum dot and an electronic device including the same are also disclosed.

公开(公告)号：US10923668B2

公开(公告)日：2021-02-16

申请号：US17005392

申请日：2020-08-28

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Kun Su Park ,  Kwanghee Kim ,  Tae Ho Kim ,  Eun Joo Jang ,  Won Sik Yoon

IPC: H01L51/00 ,  H01L51/50

Abstract: An electroluminescent device, a method of manufacturing the same, and a display device including the same.
The electroluminescent device includes a first electrode, a hole transport layer disposed on the first electrode, an emission layer disposed on the hole transport layer and including light emitting particles, an electron transport layer disposed on the emission layer and including nanoparticles having electron transport capability, and a second electrode disposed on the electron transport layer, wherein at least a portion of the nanoparticles having electron transport capability include an inorganic oxide core represented by Chemical Formula 1, and a metal-organic compound chemically bound to the surface of the inorganic oxide core. MxOy  Chemical Formula 1

公开(公告)号：US10920134B2

公开(公告)日：2021-02-16

申请号：US15463721

申请日：2017-03-20

Applicant: Samsung Electronics Co., Ltd.

Inventor： Eun Joo Jang ,  Shin Ae Jun ,  Sung Hun Lee ,  Jong Jin Park ,  Seong Jae Choi ,  Tae Kyung Ahn

IPC: C09K11/02 ,  B82Y40/00 ,  H01L51/50 ,  B82Y20/00 ,  B82Y30/00 ,  C09K11/56 ,  C09K11/62 ,  C09K11/64 ,  C09K11/66 ,  C09K11/70 ,  C09K11/74 ,  C09K11/88 ,  C09K11/89 ,  H05B33/14 ,  C30B7/14 ,  C30B29/48 ,  F21V8/00 ,  G02F1/13357

Abstract: Disclosed herein is a method for preparing a multilayer of nanocrystals. The method comprises the steps of (i) coating nanocrystals surface-coordinated by a photosensitive compound, or a mixed solution of a photosensitive compound and nanocrystals surface-coordinated by a material miscible with the photosensitive compound, on a substrate, drying the coated substrate, and exposing the dried substrate to UV light to form a first monolayer of nanocrystals, and (ii) repeating the procedure of step (i) to form one or more monolayers of nanocrystals on the first monolayer of nanocrystals.

公开(公告)号：US10824011B2

公开(公告)日：2020-11-03

申请号：US15862182

申请日：2018-01-04

Applicant: SAMSUNG ELECTRONICS CO., LTD. ,  Bilkent University

Inventor： Shin Ae Jun ,  Hilmi Volkan Demir ,  Eun Joo Jang ,  Burak Guzelturk ,  Kiyanc Gungor ,  Onur Erdem

IPC: G02F1/1335 ,  G02F1/1337 ,  G02F1/13357 ,  H01L51/52 ,  H01L51/50 ,  H01L33/58 ,  G02B6/122 ,  G02B5/00

Abstract: A photoluminescent polarizer including: a base having a first surface, a second surface opposite to the first surface, and a plurality of grid elements disposed on the first surface; wherein a grid element includes a first lateral face, a second lateral face, and at least one photoluminescent unit stack disposed on at least one of the first lateral face and the second lateral face, wherein the first lateral face is angled away from a line perpendicular to the first surface of the base and the second lateral face angled toward the first lateral face and away from the line, wherein the photoluminescent unit stack is disposed on at least one of the first lateral face and/or to the second lateral face, wherein the photoluminescent unit stack comprises a light emitting film and a metal film, the metal film disposed on a surface of the light emitting film.

公开(公告)号：US10818858B2

公开(公告)日：2020-10-27

申请号：US16058176

申请日：2018-08-08

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Tae Ho Kim ,  Chan Su Kim ,  Kun Su Park ,  Eun Joo Jang ,  Sung Woo Kim ,  Hongkyu Seo

IPC: H01L29/06 ,  H01L51/50 ,  H01L51/56 ,  H01L51/52 ,  H01L51/00

Abstract: An electroluminescent device and a display device including the same are disclosed. The electroluminescent device includes a first electrode, an electron transport layer disposed on the first electrode and including inorganic oxide particles, a self-assembled monolayer disposed on the electron transport layer, an emission layer disposed on the self-assembled monolayer and including light emitting particles, a hole transport layer disposed on the emission layer, and a second electrode disposed on the hole transport layer.

公开(公告)号：US10590340B2

公开(公告)日：2020-03-17

申请号：US16245728

申请日：2019-01-11

Applicant: SAMSUNG ELECTRONICS CO., LTD.

Inventor： Hyo Sook Jang ,  Yuho Won ,  Sungwoo Hwang ,  Ji Yeong Kim ,  Eun Joo Jang

IPC: C09K11/08 ,  C08L57/10 ,  G02F1/1335 ,  H01L51/50 ,  H01L27/32 ,  C09D133/00 ,  C08F220/06 ,  C09D133/02 ,  B82Y20/00 ,  B82Y40/00

Abstract: A cadmium free quantum dot including a semiconductor nanocrystal core and a semiconductor nanocrystal shell disposed on the core, wherein the quantum dot does not include cadmium and includes indium and zinc, the quantum dot has a maximum photoluminescence peak in a red light wavelength region, a full width at half maximum (FWHM) of the maximum photoluminescence peak is less than or equal to about 40 nanometers (nm), an ultraviolet-visible (UV-Vis) absorption spectrum of the quantum dot includes a valley between about 450 nm to a center wavelength of a first absorption peak, and a valley depth (VD) defined by the following equation is greater than or equal to about 0.2, a quantum dot polymer composite including the same, and a display device including the quantum dot-polymer composite: (Absfirst−Absvalley)/Absfirst=VD.