摘要:
A circuit for selectively bypassing a capacitive element includes at least one NMOS device selectively connectable across the capacitive element to be bypassed, and at least first and second PMOS devices. The PMOS devices are selectively connectable together in series across the capacitive element to be bypassed. The NMOS device provides a first bypass path and the first and second PMOS devices collectively provide a second bypass path.
摘要:
A buffer circuit is selectively operative in one of at least a first mode and a second mode as a function of a first control signal supplied to the buffer circuit. The buffer circuit includes interface circuitry operative to receive at least second and third control signals referenced to a first voltage level, and to generate an output signal referenced to a second voltage level, the second voltage level being greater than the first voltage level. The output signal is a function of the second control signal in the first mode and is a function of the third control signal in the second mode. The buffer circuit further includes at least first and second circuit portions coupled to the interface circuitry, each of the first and second circuit portions including at least one control input operative to receive the output signal generated by the interface circuitry.
摘要:
A compensated buffer circuit operative in one of at least a first mode and a second mode includes a plurality of output blocks and a plurality of predrivers, each of the predrivers having an output connected to an input of a corresponding one of the output blocks. Respective outputs of the output blocks are connected together and form an output of the buffer circuit. The output blocks are arranged in a sequence and are binary weighted such that a drive strength of a given one of the output blocks is about twice as large as a drive strength of an output block immediately preceding the given output block. Each of the predrivers selectively enables the corresponding output block connected thereto as a function of a control signal supplied to the predriver for compensating the buffer circuit for PVT variations to which the buffer circuit may be subjected. The respective control signals supplied to the predrivers collectively represent a binary code word, the binary code word in the second mode being equivalent to an arithmetic shift of the binary code word in the first mode.
摘要:
A compensation circuit for compensating an output impedance of at least a first MOS device over PVT variations to which the first MOS device may be subjected includes a first current source generating a first current having a value which is substantially constant and a second current source generating a second current having a value which is programmable as a function of at least one control signal presented to the second current source. A comparator is connected to respective outputs of the first and second current sources and is operative to measure a difference between the respective values of the first and second currents and to generate an output signal indicative of relative magnitudes of the first current and the second current. A processor connected in a feedback arrangement between the comparator and the second current source receives the output signal generated by the comparator and generates the control signal for controlling the second current as a function of the output signal. The processor is operative to control the value of the second current so that the second current is substantially equal to the first current.
摘要:
A comparator circuit having reduced pulse width distortion includes a differential amplifier operative to receive at least first and second signals and to amplify a difference between the first and second signals. The differential amplifier generates a difference signal at an output thereof which is a function of the difference between the first and second signals. An output stage is included in the comparator circuit for receiving the difference signal and for generating an output signal of the comparator circuit, the output signal being representative of the difference signal, the output stage having a switching point associated therewith. The comparator circuit further includes a voltage source coupled to the output of the differential amplifier. The voltage source is operative to generate a reference signal for establishing a common-mode voltage of the difference signal generated by the differential amplifier. The reference signal is substantially centered about the switching point of the output stage and substantially tracks the switching point over variations in process, voltage and/or temperature conditions to which the comparator circuit is subjected.
摘要:
When a P-channel pass gate transistor is added in parallel to an N-channel pass gate, the resulting circuit improves overvoltage tolerance of an input buffer. A simple bias circuit including two small transistors controls a gate of this P-channel pass gate transistor in such a way that it is turned OFF when an overvoltage is applied, but turned ON when a normal voltage is applied. Another embodiment has two N-channel devices (M12, M13) coupled in series with each other and one of the N-channel devices (M13) being configured in a “turned off” position, by coupling the source and gate terminals to a ground voltage (VSS) and providing the supply voltage (VDD) at the gate terminal of another N-channel device (M12), whereby the device M12 protects the device M13 from overvoltage.
摘要:
A semiconductor resistor circuit having a controllable resistance associated therewith includes a plurality of resistor segments connected in a series and/or parallel configuration. The resistor circuit further includes a plurality of switches controlling connection of respective ones of the resistor segments to the resistor circuit, to thereby selectively control a resistance of the resistor circuit in response to respective control signals presented to the switches. The resistor circuit is selectively controllable in discrete resistance intervals, the resistance intervals being unequal to one another. The resistor segments have resistance values that are selected such that a percentage resistance variation across each of the respective resistance intervals as a function of process, voltage and/or temperature conditions to which the resistor circuit is subjected is substantially the same.
摘要:
In memory circuitry, to ensure that a memory device, such as a DDR3 RDIMM, safely operates in self-refresh mode while the memory controller is powered down and off, the memory device's clock enable (CKE) input is connected to both (i) the CKE signal applied by the memory controller and (ii) a termination voltage provided by the power module. To power down the memory controller, the memory controller drives the CKE signal low, then the power module drives the termination voltage low, then the power module powers down the memory controller. To resume normal operations, the power module powers up the memory controller, then the memory controller drives the CKE signal low, then the power module powers up the termination voltage. By holding the termination voltage low, the memory circuitry ensures that the memory device stays in self-refresh mode while the memory device is powered down and off.
摘要:
In memory circuitry, to ensure that a memory device, such as a DDR3 RDIMM, safely operates in self-refresh mode while the memory controller is powered down and off, the memory device's clock enable (CKE) input is connected to both (i) the CKE signal applied by the memory controller and (ii) a termination voltage provided by the power module. To power down the memory controller, the memory controller drives the CKE signal low, then the power module drives the termination voltage low, then the power module powers down the memory controller. To resume normal operations, the power module powers up the memory controller, then the memory controller drives the CKE signal low, then the power module powers up the termination voltage. By holding the termination voltage low, the memory circuitry ensures that the memory device stays in self-refresh mode while the memory device is powered down and off.
摘要:
A PUR circuit for generating a reset signal includes a first node for receiving a reference voltage and a second node for receiving a supply voltage that is referenced with respect to the reference voltage. The circuit further includes a voltage level detector coupled between the first node and a third node, the voltage level detector being configured to generate a first control signal at the third node. The voltage level detector includes a first transistor having a first threshold voltage associated therewith. A resistance element is coupled between the second node and the third node, the resistance element having a first resistance value associated therewith. The circuit also includes an inverter having an input coupled to the third node and having an output for generating a second control signal in response to the first control signal. The inverter includes a second transistor having a second threshold voltage associated therewith which is lower than the first threshold voltage. The voltage level detector is configured such that the first control signal is substantially equal to the supply voltage when the supply voltage is less than a first voltage, and the first control signal is equal to a second voltage when the supply voltage is substantially equal to or greater than the first voltage. The second voltage is less than a lower switching point of the inverter, the first voltage being based at least in part on the first threshold voltage, the reset signal being a function of the second control signal.