NANOIMPRINT LITHOGRAPHY FOR THIN FILM HEADS
    25.
    发明申请
    NANOIMPRINT LITHOGRAPHY FOR THIN FILM HEADS 有权
    用于薄膜头的NANOIMPRINT LITHOGRAPHY

    公开(公告)号:US20140254338A1

    公开(公告)日:2014-09-11

    申请号:US13791130

    申请日:2013-03-08

    Abstract: Nanoimprint lithography can be used in a variety of ways to improve resolution, pattern fidelity and symmetry of microelectronic structures for thin film head manufacturing. For example, write poles, readers, and near-field transducers can be manufactured with tighter tolerances that improve the performance of the microelectronic structures. Further, entire bars of thin film heads can be manufactured simultaneously using nanoimprint lithography, which reduces or eliminated alignment errors between neighboring thin film heads in a bar of thin film heads.

    Abstract translation: 纳米压印光刻可以以各种方式用于提高薄膜头制造的微电子结构的分辨率,图案保真度和对称性。 例如,写极点,读取器和近场换能器可以用更严格的公差制造,从而改善微电子结构的性能。 此外,可以使用纳米压印光刻法同时制造薄膜头的整个条,这减少或消除了薄膜头中的相邻薄膜头之间的对准误差。

Patent Agency Ranking