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公开(公告)号：US20210210640A1
公开(公告)日：2021-07-08
申请号：US17056072
申请日：2019-05-27
Applicant: Semiconductor Energy Laboratory Co., Ltd.
Inventor： Toshihiko TAKEUCHI , Naoto YAMADE , Yutaka OKAZAKI , Sachiaki TEZUKA , Shunpei YAMAZAKI
IPC: H01L29/786 , H01L27/06 , H01L27/088 , H01L27/108 , H01L29/792 , H01L27/12 , H01L21/8234
Abstract: The semiconductor device includes a first conductor and a second conductor; a first insulator to a third insulator; and a first oxide to a third oxide. The first conductor is disposed to be exposed from a top surface of the first insulator. The first oxide is disposed over the first insulator and the first conductor. A first opening reaching the first conductor is provided in the first oxide. The second oxide is disposed over the first oxide. The second oxide comprises a first region, a second region, and a third region positioned between the first region and the second region. The third oxide is disposed over the second oxide. The second insulator is disposed over the third oxide. The second conductor is disposed over the second insulator. The third insulator is disposed to cover the first region and the second region and to be in contact with the top surface of the first insulator.
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公开(公告)号：US20210167194A1
公开(公告)日：2021-06-03
申请号：US17176211
申请日：2021-02-16
Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
Inventor： Shunpei YAMAZAKI , Toshihiko TAKEUCHI , Naoto YAMADE , Hiroshi FUJIKI , Tomoaki MORIWAKA , Shunsuke KIMURA
Abstract: A semiconductor device that can be miniaturized or highly integrated is provided.
The semiconductor device includes a first conductor, a second conductor over the first conductor, a first insulator covering the second conductor, a first oxide over the first insulator, and a second oxide over the first oxide, an opening overlapping with at least part of the first conductor is provided in the first oxide and the first insulator, and the second oxide is electrically connected to the first conductor through the opening.-
公开(公告)号：US20190221674A1
公开(公告)日：2019-07-18
申请号：US16367329
申请日：2019-03-28
Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
Inventor： Yutaka OKAZAKI , Akihisa SHIMOMURA , Naoto YAMADE , Tomoya TAKESHITA , Tetsuhiro TANAKA
IPC: H01L29/786 , H01L29/45 , H01L27/12 , H01L29/49 , H01L29/66
CPC classification number: H01L29/78696 , H01L27/1225 , H01L27/1255 , H01L29/45 , H01L29/4908 , H01L29/66969 , H01L29/78609 , H01L29/78648 , H01L29/7869
Abstract: A transistor with favorable electrical characteristics is provided. One embodiment of the present invention is a semiconductor device including a semiconductor, a first insulator in contact with the semiconductor, a first conductor in contact with the first insulator and overlapping with the semiconductor with the first insulator positioned between the semiconductor and the first conductor, and a second conductor and a third conductor, which are in contact with the semiconductor. One or more of the first to third conductors include a region containing tungsten and one or more elements selected from silicon, carbon, germanium, tin, aluminum, and nickel.
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公开(公告)号：US20170018655A1
公开(公告)日：2017-01-19
申请号：US15204015
申请日：2016-07-07
Applicant: Semiconductor Energy Laboratory Co., Ltd.
Inventor： Yutaka OKAZAKI , Akihisa SHIMOMURA , Naoto YAMADE , Tomoya TAKESHITA , Tetsuhiro TANAKA
IPC: H01L29/786 , H01L29/66
CPC classification number: H01L29/78696 , H01L27/1225 , H01L27/1255 , H01L29/45 , H01L29/4908 , H01L29/66969 , H01L29/78609 , H01L29/78648 , H01L29/7869
Abstract: A transistor with favorable electrical characteristics is provided. One embodiment of the present invention is a semiconductor device including a semiconductor, a first insulator in contact with the semiconductor, a first conductor in contact with the first insulator and overlapping with the semiconductor with the first insulator positioned between the semiconductor and the first conductor, and a second conductor and a third conductor, which are in contact with the semiconductor. One or more of the first to third conductors include a region containing tungsten and one or more elements selected from silicon, carbon, germanium, tin, aluminum, and nickel.
Abstract translation: 提供具有良好电特性的晶体管。 本发明的一个实施例是一种半导体器件，包括半导体，与半导体接触的第一绝缘体，与第一绝缘体接触的第一导体，并与位于半导体与第一导体之间的第一绝缘体与半导体重叠， 以及与半导体接触的第二导体和第三导体。 第一至第三导体中的一个或多个包括含有钨和选自硅，碳，锗，锡，铝和镍中的一种或多种元素的区域。
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公开(公告)号：US20140186998A1
公开(公告)日：2014-07-03
申请号：US14199222
申请日：2014-03-06
Applicant: Semiconductor Energy Laboratory Co., Ltd.
Inventor： Junichi KOEZUKA , Naoto YAMADE , Kyoko YOSHIOKA , Yuhei SATO , Mari TERASHIMA
CPC classification number: H01L29/66969 , H01L21/02667 , H01L29/78606 , H01L29/78693
Abstract: A highly reliable semiconductor device which is formed using an oxide semiconductor and has stable electric characteristics is provided. A semiconductor device which includes an amorphous oxide semiconductor layer including a region containing oxygen in a proportion higher than that in the stoichiometric composition, and an aluminum oxide film provided over the amorphous oxide semiconductor layer is provided. The amorphous oxide semiconductor layer is formed as follows: oxygen implantation treatment is performed on a crystalline or amorphous oxide semiconductor layer which has been subjected to dehydration or dehydrogenation treatment, and then thermal treatment is performed on the oxide semiconductor layer provided with an aluminum oxide film at a temperature lower than or equal to 450° C.
Abstract translation: 提供了使用氧化物半导体形成且具有稳定的电特性的高度可靠的半导体器件。 提供一种半导体器件，其包括非晶氧化物半导体层，所述非晶氧化物半导体层包括含有比所述化学计量组成中高的比例的氧的区域，以及设置在所述非晶氧化物半导体层上的氧化铝膜。 无定形氧化物半导体层如下形成：对已进行脱水或脱氢处理的结晶或非晶氧化物半导体层进行氧注入处理，然后对设置有氧化铝膜的氧化物半导体层进行热处理 在低于或等于450℃的温度下
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Patent Agency Ranking
公开(公告)号：US20240404884A1
公开(公告)日：2024-12-05
申请号：US18799170
申请日：2024-08-09
Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
Inventor： Shunpei YAMAZAKI , Tsutomu MURAKAWA , Shinya SASAGAWA , Naoto YAMADE , Takashi HAMADA , Hiroki KOMAGATA
IPC: H01L21/8234 , H01L21/225 , H01L21/28 , H01L27/088 , H01L29/66 , H01L29/786
Abstract: To provide a semiconductor device with less variations, a first insulator is deposited; a stack of first and second oxides and a first conductor is formed over the first insulator; a second insulator is formed over the first insulator and the stack; an opening is formed in the second insulator; a top surface of the second oxide is exposed by removing a region of the first conductor, second and third conductors are formed over the second oxide, and then cleaning is performed; a first oxide film is deposited in contact with a side surface of the first oxide and top and side surfaces of the second oxide; heat treatment is performed on an interface between the second oxide and the first oxide film through the first oxide film; and the second insulator is exposed and a fourth conductor, a third insulator, and a third oxide are formed in the opening.
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公开(公告)号：US20220208988A1
公开(公告)日：2022-06-30
申请号：US17605187
申请日：2020-04-27
Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
Inventor： Shunpei YAMAZAKI , Tsutomu MURAKAWA , Shinya SASAGAWA , Naoto YAMADE , Takashi HAMADA , Hiroki KOMAGATA
IPC: H01L29/66 , H01L21/8234 , H01L21/225
Abstract: A semiconductor device with less variations in transistor characteristics is provided.
A first insulator is deposited; an island-shaped stacked body in which a first oxide, a second oxide, and a first conductor are stacked in this order is formed over the first insulator; a second insulator is formed over the first insulator and the stacked body; an opening portion for exposing the stacked body is formed in the second insulator; a top surface of the second oxide is exposed by removing a region of the first conductor exposed in the opening portion, a second conductor and a third conductor are formed over the second oxide, and then cleaning treatment is performed; a first oxide film is deposited in contact with a side surface of the first oxide and top and side surfaces of the second oxide that are exposed in the opening portion; oxygen addition treatment is performed on a vicinity of an interface between the second oxide and the first oxide film through the first oxide film and then heat treatment is performed; and a first insulating film and a first conductive film are deposited over the first oxide film, and then parts of the first conductive film, the first insulating film, the first oxide film, and the second insulator are removed by chemical polishing treatment to expose the second insulator and form a fourth conductor, a third insulator, and a third oxide in the opening portion provided in the second insulator.-
公开(公告)号：US20200052099A1
公开(公告)日：2020-02-13
申请号：US16492282
申请日：2018-02-28
Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
Inventor： Shunpei YAMAZAKI , Toshihiko TAKEUCHI , Naoto YAMADE , Hiroshi FUJIKI , Tomoaki MORIWAKA , Shunsuke KIMURA
Abstract: A semiconductor device that can be miniaturized or highly integrated is provided. The semiconductor device includes a first conductor, a second conductor over the first conductor, a first insulator covering the second conductor, a first oxide over the first insulator, and a second oxide over the first oxide, an opening overlapping with at least part of the first conductor is provided in the first oxide and the first insulator, and the second oxide is electrically connected to the first conductor through the opening.
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公开(公告)号：US20200006319A1
公开(公告)日：2020-01-02
申请号：US16561501
申请日：2019-09-05
Applicant: Semiconductor Energy Laboratory Co., Ltd.
Inventor： Naoki OKUNO , Kosei NEI , Hiroaki HONDA , Naoto YAMADE , Hiroshi FUJIKI
IPC: H01L27/02 , H01L27/11521 , H01L27/11519 , H01L27/11565 , H01L29/786
Abstract: A transistor includes a first insulator over a substrate; a first oxide thereover; a second oxide in contact with at least part of the top surface of the first oxide; a first conductor and a second conductor each in contact with at least part of the top surface of the second oxide; a third oxide that is over the first conductor and the second conductor and is in contact with at least part of the top surface of the second oxide; a second insulator thereover; a third conductor which is over the second insulator and at least part of which overlaps with a region between the first conductor and the second conductor; and a third insulator which is over the third conductor and at least part of which is in contact with the top surface of the first insulator. The thickness of a region of the first insulator that is in contact with the third insulator is less than the thickness of a region of the first insulator that is in contact with the first oxide.
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公开(公告)号：US20170117305A1
公开(公告)日：2017-04-27
申请号：US15399154
申请日：2017-01-05
Applicant: Semiconductor Energy Laboratory Co., Ltd.
Inventor： Junichi KOEZUKA , Naoto YAMADE , Yuhei SATO , Yutaka OKAZAKI , Shunpei YAMAZAKI
IPC: H01L27/12 , H01L29/786 , H01L29/66 , H01L21/02 , H01L21/477
CPC classification number: H01L27/1274 , H01L21/02565 , H01L21/02609 , H01L21/02667 , H01L21/383 , H01L21/44 , H01L21/477 , H01L27/1225 , H01L29/66742 , H01L29/66969 , H01L29/78606 , H01L29/7869 , H01L29/78696
Abstract: A semiconductor device using an oxide semiconductor is provided with stable electric characteristics to improve the reliability. In a manufacturing process of a transistor including an oxide semiconductor film, an oxide semiconductor film containing a crystal having a c-axis which is substantially perpendicular to a top surface thereof (also called a first crystalline oxide semiconductor film) is formed; oxygen is added to the oxide semiconductor film to amorphize at least part of the oxide semiconductor film, so that an amorphous oxide semiconductor film containing an excess of oxygen is formed; an aluminum oxide film is formed over the amorphous oxide semiconductor film; and heat treatment is performed thereon to crystallize at least part of the amorphous oxide semiconductor film, so that an oxide semiconductor film containing a crystal having a c-axis which is substantially perpendicular to a top surface thereof (also called a second crystalline oxide semiconductor film) is formed.
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