公开(公告)号：US20170309721A1

公开(公告)日：2017-10-26

申请号：US15642400

申请日：2017-07-06

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Hideomi SUZAWA ,  Hiroshi FUJIKI ,  Hiromichi GODO ,  Yasumasa YAMANE

IPC: H01L29/49 ,  H01L29/45 ,  H01L29/24 ,  H01L29/786 ,  H01L27/12

CPC classification number: H01L29/4908 ,  H01L27/1225 ,  H01L29/24 ,  H01L29/45 ,  H01L29/7869

Abstract: The reliability of a semiconductor device is increased by suppression of a variation in electric characteristics of a transistor as much as possible. As a cause of a variation in electric characteristics of a transistor including an oxide semiconductor, the concentration of hydrogen in the oxide semiconductor, the density of oxygen vacancies in the oxide semiconductor, or the like can be given. A source electrode and a drain electrode are formed using a conductive material which is easily bonded to oxygen. A channel formation region is formed using an oxide layer formed by a sputtering method or the like under an atmosphere containing oxygen. Thus, the concentration of hydrogen in a stack, in particular, the concentration of hydrogen in a channel formation region can be reduced.

公开(公告)号：US20150056750A1

公开(公告)日：2015-02-26

申请号：US14527103

申请日：2014-10-29

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shinya SASAGAWA ,  Hiroshi FUJIKI ,  Yoshinori IEDA

IPC: H01L29/66 ,  H01L21/02 ,  H01L21/4757

CPC classification number: H01L29/66969 ,  H01L21/02164 ,  H01L21/02178 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/47573 ,  H01L29/41733 ,  H01L29/66742 ,  H01L29/7869

Abstract: A first insulating film in contact with an oxide semiconductor film and a second insulating film are stacked in this order over an electrode film of a transistor including the oxide semiconductor film, an etching mask is formed over the second insulating film, an opening portion exposing the electrode film is formed by etching a portion of the first insulating film and a portion of the second insulating film, the opening portion exposing the electrode film is exposed to argon plasma, the etching mask is removed, and a conductive film is formed in the opening portion exposing the electrode film. The first insulating film is an insulating film whose oxygen is partly released by heating. The second insulating film is less easily etched than the first insulating film and has a lower gas-permeability than the first insulating film.

Abstract translation: 与氧化物半导体膜和第二绝缘膜接触的第一绝缘膜依次层叠在包含氧化物半导体膜的晶体管的电极膜上，在第二绝缘膜上形成蚀刻掩模， 通过蚀刻第一绝缘膜的一部分和第二绝缘膜的一部分形成电极膜，将暴露于电极膜的开口部暴露于氩等离子体中，除去蚀刻掩模，并且在开口中形成导电膜 部分暴露电极膜。 第一绝缘膜是其氧气通过加热部分释放的绝缘膜。 第二绝缘膜比第一绝缘膜不易蚀刻，并且具有比第一绝缘膜更低的透气性。

公开(公告)号：US20240258409A1

公开(公告)日：2024-08-01

申请号：US18624488

申请日：2024-04-02

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Shunpei YAMAZAKI ,  Toshihiko TAKEUCHI ,  Naoto YAMADE ,  Hiroshi FUJIKI ,  Tomoaki MORIWAKA ,  Shunsuke KIMURA

IPC: H01L29/66 ,  H01L29/10 ,  H01L29/49

CPC classification number: H01L29/66969 ,  H01L29/1054 ,  H01L29/4966

Abstract: A semiconductor device that can be miniaturized or highly integrated is provided.
The semiconductor device includes a first conductor, a second conductor over the first conductor, a first insulator covering the second conductor, a first oxide over the first insulator, and a second oxide over the first oxide, an opening overlapping with at least part of the first conductor is provided in the first oxide and the first insulator, and the second oxide is electrically connected to the first conductor through the opening.

公开(公告)号：US20160190273A1

公开(公告)日：2016-06-30

申请号：US15066018

申请日：2016-03-10

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shunpei YAMAZAKI ,  Hideomi SUZAWA ,  Hiroshi FUJIKI ,  Hiromichi GODO ,  Yasumasa YAMANE

IPC: H01L29/49 ,  H01L29/786 ,  H01L27/12 ,  H01L29/24

CPC classification number: H01L29/4908 ,  H01L27/1225 ,  H01L29/24 ,  H01L29/45 ,  H01L29/7869

Abstract: The reliability of a semiconductor device is increased by suppression of a variation in electric characteristics of a transistor as much as possible. As a cause of a variation in electric characteristics of a transistor including an oxide semiconductor, the concentration of hydrogen in the oxide semiconductor, the density of oxygen vacancies in the oxide semiconductor, or the like can be given. A source electrode and a drain electrode are formed using a conductive material which is easily bonded to oxygen. A channel formation region is formed using an oxide layer formed by a sputtering method or the like under an atmosphere containing oxygen. Thus, the concentration of hydrogen in a stack, in particular, the concentration of hydrogen in a channel formation region can be reduced.

Abstract translation: 通过尽可能地抑制晶体管的电特性的变化来提高半导体器件的可靠性。 作为包括氧化物半导体的晶体管的电特性变化的原因，可以给出氧化物半导体中的氢浓度，氧化物半导体中的氧空位密度等。 源电极和漏电极使用容易与氧结合的导电材料形成。 使用在含有氧的气氛下通过溅射法等形成的氧化物层形成沟道形成区域。 因此，可以降低堆叠中的氢浓度，特别是可以降低通道形成区域中的氢浓度。

公开(公告)号：US20200052099A1

公开(公告)日：2020-02-13

申请号：US16492282

申请日：2018-02-28

Applicant: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

Inventor： Shunpei YAMAZAKI ,  Toshihiko TAKEUCHI ,  Naoto YAMADE ,  Hiroshi FUJIKI ,  Tomoaki MORIWAKA ,  Shunsuke KIMURA

IPC: H01L29/66 ,  H01L29/10

Abstract: A semiconductor device that can be miniaturized or highly integrated is provided. The semiconductor device includes a first conductor, a second conductor over the first conductor, a first insulator covering the second conductor, a first oxide over the first insulator, and a second oxide over the first oxide, an opening overlapping with at least part of the first conductor is provided in the first oxide and the first insulator, and the second oxide is electrically connected to the first conductor through the opening.

公开(公告)号：US20200006319A1

公开(公告)日：2020-01-02

申请号：US16561501

申请日：2019-09-05

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Naoki OKUNO ,  Kosei NEI ,  Hiroaki HONDA ,  Naoto YAMADE ,  Hiroshi FUJIKI

IPC: H01L27/02 ,  H01L27/11521 ,  H01L27/11519 ,  H01L27/11565 ,  H01L29/786

Abstract: A transistor includes a first insulator over a substrate; a first oxide thereover; a second oxide in contact with at least part of the top surface of the first oxide; a first conductor and a second conductor each in contact with at least part of the top surface of the second oxide; a third oxide that is over the first conductor and the second conductor and is in contact with at least part of the top surface of the second oxide; a second insulator thereover; a third conductor which is over the second insulator and at least part of which overlaps with a region between the first conductor and the second conductor; and a third insulator which is over the third conductor and at least part of which is in contact with the top surface of the first insulator. The thickness of a region of the first insulator that is in contact with the third insulator is less than the thickness of a region of the first insulator that is in contact with the first oxide.

公开(公告)号：US20130112968A1

公开(公告)日：2013-05-09

申请号：US13666147

申请日：2012-11-01

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shinya SASAGAWA ,  Hiroshi FUJIKI

IPC: H01L29/786

CPC classification number: H01L29/7869 ,  H01L29/78696

Abstract: A semiconductor device which achieves miniaturization with favorable characteristics maintained is provided. In addition, a miniaturized semiconductor device is provided with high yield. In a semiconductor device including an oxide semiconductor, the contact resistance between the oxide semiconductor and the source electrode or the drain electrode is reduced with miniaturization advanced. Specifically, an oxide semiconductor film is processed to be an island-shaped oxide semiconductor film whose side surface has a tapered shape. Further, the side surface has a taper angle greater than or equal to 1° and less than 10°, and at least part of the source electrode and the drain electrode is in contact with the side surfaces of the oxide semiconductor film. With such a structure, the contact region of the oxide semiconductor film and the source electrode or the drain electrode is increased, whereby the contact resistance is reduced.

Abstract translation: 提供了一种实现小型化且保持良好特性的半导体器件。 此外，提供了一种小型化的半导体器件，其产率高。 在包括氧化物半导体的半导体器件中，随着小型化，氧化物半导体和源电极或漏电极之间的接触电阻降低。 具体而言，将氧化物半导体膜加工成为侧面为锥形的岛状氧化物半导体膜。 此外，侧面具有大于或等于1°且小于10°的锥角，并且源电极和漏电极的至少一部分与氧化物半导体膜的侧表面接触。 通过这样的结构，氧化物半导体膜与源电极或漏电极的接触面积增大，接触电阻降低。

公开(公告)号：US20190229192A1

公开(公告)日：2019-07-25

申请号：US16247631

申请日：2019-01-15

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Hiroki KOMAGATA ,  Naoki OKUNO ,  Yutaka OKAZAKI ,  Hiroshi FUJIKI

IPC: H01L29/20 ,  H01L29/10 ,  H01L29/221 ,  H01L29/423 ,  H01L29/786

Abstract: A semiconductor device with a high on-state current is provided. The semiconductor device includes a first insulator over a substrate, an oxide over the first insulator, a second insulator over the oxide, a conductor overlapping with the oxide with the second insulator therebetween, a third insulator in contact with a top surface of the oxide, a fourth insulator in contact with a top surface of the third insulator, a side surface of the second insulator, and a side surface of the conductor, and a fifth insulator in contact with a side surface of the fourth insulator, a side surface of the third insulator, and the top surface of the oxide. The third insulator has a lower oxygen permeability than the fourth insulator.

公开(公告)号：US20180108647A1

公开(公告)日：2018-04-19

申请号：US15725519

申请日：2017-10-05

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Naoki OKUNO ,  Kosei NEI ,  Hiroaki HONDA ,  Naoto YAMADE ,  Hiroshi FUJIKI

IPC: H01L27/02 ,  H01L27/11519 ,  H01L27/11565 ,  H01L29/786

CPC classification number: H01L27/0207 ,  H01L27/11519 ,  H01L27/11521 ,  H01L27/11565 ,  H01L29/78609 ,  H01L29/78618 ,  H01L29/78648 ,  H01L29/7869 ,  H01L29/78693 ,  H01L29/78696

Abstract: A transistor includes a first insulator over a substrate; a first oxide thereover; a second oxide in contact with at least part of the top surface of the first oxide; a first conductor and a second conductor each in contact with at least part of the top surface of the second oxide; a third oxide that is over the first conductor and the second conductor and is in contact with at least part of the top surface of the second oxide; a second insulator thereover; a third conductor which is over the second insulator and at least part of which overlaps with a region between the first conductor and the second conductor; and a third insulator which is over the third conductor and at least part of which is in contact with the top surface of the first insulator. The thickness of a region of the first insulator that is in contact with the third insulator is less than the thickness of a region of the first insulator that is in contact with the first oxide.

公开(公告)号：US20150255584A1

公开(公告)日：2015-09-10

申请号：US14718763

申请日：2015-05-21

Applicant: Semiconductor Energy Laboratory Co., Ltd.

Inventor： Shinya SASAGAWA ,  Hitoshi NAKAYAMA ,  Hiroshi FUJIKI

IPC: H01L29/66 ,  H01L29/786

CPC classification number: H01L29/66969 ,  H01L21/02554 ,  H01L21/02565 ,  H01L21/02631 ,  H01L27/1225 ,  H01L29/7869 ,  H01L29/78696

Abstract: To establish a processing technique in manufacture of a semiconductor device including an In—Sn—Zn—O-based semiconductor. An In—Sn—Zn—O-based semiconductor layer is selectively etched by dry etching with the use of a gas containing chlorine such as Cl2, BCl3, SiCl4, or the like. In formation of a source electrode layer and a drain electrode layer, a conductive layer on and in contact with the In—Sn—Zn—O-based semiconductor layer can be selectively etched with little removal of the In—Sn—Zn—O-based semiconductor layer with the use of a gas containing oxygen or fluorine in addition to a gas containing chlorine.

Abstract translation: 为了建立包括In-Sn-Zn-O类半导体的半导体器件的制造中的加工技术。 通过使用含氯气体如Cl 2，BCl 3，SiCl 4等的干蚀刻来选择性地蚀刻In-Sn-Zn-O系半导体层。 在形成源极电极层和漏电极层时，可以选择性地蚀刻与In-Sn-Zn-O系半导体层接触的导电层，同时很少去除In-Sn-Zn-O系半导体层， 除了含有氯的气体之外，还使用含有氧或氟的气体。