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公开(公告)号：US10516842B2
公开(公告)日：2019-12-24
申请号：US15642390
申请日：2017-07-06
Applicant: Semiconductor Energy Laboratory Co., Ltd.
Inventor： Yoshiyuki Kurokawa
IPC: H04N5/3745 , G01S17/02 , H01L27/146 , G01S17/89 , G01S7/481 , G01S7/486
Abstract: A driving method of a semiconductor device that takes three-dimensional images with short duration is provided. In a first step, a light source starts to emit light, and first potential corresponding to the total amount of light received by a first photoelectric conversion element and a second photoelectric conversion element is written to a first charge accumulation region. In a second step, the light source stops emitting light and second potential corresponding to the total amount of light received by the first photoelectric conversion element and the second photoelectric conversion element is written to a second charge accumulation region. In a third step, first data corresponding to the potential written to the first charge accumulation region is read. In a fourth step, second data corresponding to the potential written to the second charge accumulation region is read.
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公开(公告)号：US20190333445A1
公开(公告)日：2019-10-31
申请号：US16465244
申请日：2017-11-29
Applicant: Semiconductor Energy Laboratory Co., Ltd.
Inventor： Yoshiyuki Kurokawa
IPC: G09G3/3225 , G09G3/3275 , H01L27/02 , H01L29/786 , G09G3/3266
Abstract: A novel semiconductor device or a novel display system is provided. A signal generation portion monitors display conditions and controls the potentials output from a power supply circuit, in accordance with the display conditions. Specifically, a controller changes the parameter stored in a memory device when display conditions change. Then, the power supply circuit generates the potentials with the use of the changed parameter. Accordingly, the voltage applied to a light-emitting element can be controlled in accordance with the display conditions, which reduces the power consumption in a display portion.
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公开(公告)号：US10453381B2
公开(公告)日：2019-10-22
申请号：US15632448
申请日：2017-06-26
Applicant: Semiconductor Energy Laboratory Co., Ltd.
Inventor： Yoshiyuki Kurokawa
IPC: G09G3/20 , G09G3/3208 , G09G3/36 , G09G5/10 , G09G3/32 , G06N3/02 , H01L29/786
Abstract: To provide an electronic device whose display quality is independent of environment light. The display quality of an image of an electronic device that is viewed by a user depends on the brightness of external light, the angle of external light incident on the electronic device, and the orientation of a display portion in the electronic device. The electronic device is provided with an optical sensor, an acceleration sensor, and the like so that the brightness of external light, the angle of external light incident on the electronic device, and the orientation of the display portion in the electronic device are determined, and the luminance and color tone of the display portion in the electronic device are corrected on the basis of the information. As the correcting method, calculation using a neural network is performed using the luminance and color tone meeting the preference of the user as teacher data and the brightness of external light, the angle of external light incident on the electronic device, and the orientation of the display portion in the electronic device as input data. The calculation result is reflected on the luminance and color tone of the display portion in the electronic device, whereby an image with display quality that suits the user's preference can be displayed.
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公开(公告)号：US10290266B2
公开(公告)日：2019-05-14
申请号：US15632459
申请日：2017-06-26
Applicant: Semiconductor Energy Laboratory Co., Ltd.
Inventor： Yoshiyuki Kurokawa
Abstract: Provided is an electronic device whose display quality is independent of environment light. The electronic device is provided with an optical sensor, an acceleration sensor, and the like so that information including the brightness of external light, the angle of external light incident on the electronic device, and the orientation of the display portion in the electronic device is obtained, and the luminance and color tone of the display portion in the electronic device are corrected on the basis of the information. As the correcting method, calculation using a neural network is performed using the luminance and color tone meeting the preference of the user as teacher data and the obtained information as input data. The calculation result is reflected on the luminance and color tone of the display portion in the electronic device, whereby an image with display quality that suits the user's preference can be displayed.
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公开(公告)号：US10256345B2
公开(公告)日：2019-04-09
申请号：US15699271
申请日：2017-09-08
Applicant: Semiconductor Energy Laboratory Co., Ltd.
Inventor： Yoshiyuki Kurokawa
IPC: H01L29/786 , H01L27/146
Abstract: An imaging device that does not need a lens is provided. The imaging device includes a first layer, a second layer, and a third layer. The second layer is positioned between the first layer and the third layer. The first layer includes a diffraction grating. The second layer includes a photoelectric conversion element. The third layer includes a transistor including an oxide semiconductor in an active layer.
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Patent Agency Ranking
公开(公告)号：US10249658B2
公开(公告)日：2019-04-02
申请号：US15679210
申请日：2017-08-17
Applicant: Semiconductor Energy Laboratory Co., Ltd.
Inventor： Takayuki Ikeda , Yoshiyuki Kurokawa
IPC: H01L27/146 , H01L29/24 , H01L29/786 , H01L31/0272 , H01L31/032 , H02S40/44
Abstract: An imaging device which offers an image with high quality and is suitable for high-speed operation is provided. The imaging device includes a first region to an n-th region (n is a natural number of 2 or more and 16 or less) each including a first circuit, a second circuit, a third circuit, and a fourth circuit. The first to third circuits each include a transistor in which silicon is used in an active layer or an active region. The fourth circuit includes a photoelectric conversion element and a transistor in which an oxide semiconductor is used in an active layer. The first circuit includes a region overlapping with the fourth circuit. The third circuit includes a region overlapping with the fourth circuit.
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公开(公告)号：US10230368B2
公开(公告)日：2019-03-12
申请号：US15191763
申请日：2016-06-24
Applicant: Semiconductor Energy Laboratory Co., Ltd.
Inventor： Munehiro Kozuma , Yoshiyuki Kurokawa , Takayuki Ikeda , Takeshi Aoki
IPC: H03K19/00 , H03K19/173 , H03K19/177 , H01L27/12 , H01L29/786 , H03K19/0944 , H01L29/24
Abstract: A programmable logic device includes a plurality of programmable logic elements (PLE) whose electrical connection is controlled by first configuration data. Each of The PLEs includes an LUT in which a relationship between a logic level of an input signal and a logic level of an output signal is determined by second configuration data, an FF to which the output signal of the LUT is input, and an MUX. The MUX includes at least two switches each including first and second transistor. A signal including third configuration data is input to a gate of the second transistor through the first transistor. The output signal of the LUT or an output signal of the FF is input to one of a source and a drain of the second transistor.
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公开(公告)号：US10141054B2
公开(公告)日：2018-11-27
申请号：US15232106
申请日：2016-08-09
Applicant: Semiconductor Energy Laboratory Co., Ltd.
Inventor： Takeshi Aoki , Munehiro Kozuma , Yoshiyuki Kurokawa
Abstract: A semiconductor device that has a long data retention time during stop of supply of power supply voltage by reducing leakage current due to miniaturization of a semiconductor element. In a structure where charge corresponding to data is held with the use of low off-state current of a transistor containing an oxide semiconductor in its channel formation region, a transistor for reading data and a transistor for storing charge are separately provided, thereby decreasing leakage current flowing through a gate insulating film.
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公开(公告)号：US10134789B2
公开(公告)日：2018-11-20
申请号：US14746926
申请日：2015-06-23
Applicant: Semiconductor Energy Laboratory Co., Ltd.
Inventor： Yuki Okamoto , Yoshiyuki Kurokawa , Hiroki Inoue , Takuro Ohmaru
IPC: H01L27/146 , H01L29/786 , H01L31/105 , H01L31/0272
Abstract: An imaging device with high productivity and improved dynamic range is provided. The imaging device includes a pixel driver circuit and a photoelectric conversion element including a p-type semiconductor, an n-type semiconductor, and an i-type semiconductor. In a plan view, the total area of a part of the i-type semiconductor overlapped with neither a metal material nor a semiconductor material constituting the pixel driver circuit is preferably greater than or equal to 65%, more preferably greater than or equal to 80%, and still more preferably greater than or equal to 90% of the area of the whole i-type semiconductor. Plural photoelectric conversion elements are provided in the same semiconductor, whereby a process for separating the photoelectric conversion elements can be omitted. The i-type semiconductors in the plural photoelectric conversion elements are separated from each other by the p-type semiconductor or the n-type semiconductor.
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公开(公告)号：US10120470B2
公开(公告)日：2018-11-06
申请号：US15652542
申请日：2017-07-18
Applicant: Semiconductor Energy Laboratory Co., Ltd.
Inventor： Yoshiyuki Kurokawa
IPC: G06F3/041 , G09G3/3275 , G09G3/36 , G09G3/3266 , H01L27/12 , G02F1/1333
Abstract: A semiconductor device with low power consumption is provided. The semiconductor device includes a controller, an AI controller, a frame memory, a register, and an image processing portion. The image processing portion is configured to receive image data from the frame memory and a parameter from the register, and to process the image data using the parameter. The frame memory is configured to retain the image data while power supply is stopped, and the register is configured to retain the parameter while power supply is stopped. The controller is configured to control power supply to the frame memory, the register, and the image processing portion. The AI controller is configured to predict when to switch into power gating and to provide a timing instruction to perform preparation operation for power gating.
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