公开(公告)号：US20110312135A1

公开(公告)日：2011-12-22

申请号：US13067407

申请日：2011-05-31

申请人： Seung-Kyu Park ,  Ki-Yong Lee ,  Jin-Wook Seo ,  Min-Jae Jeong ,  Yun-Mo Chung ,  Yong-Duck Son ,  Byung-Soo So ,  Byoung-Keon Park ,  Kil-Won Lee ,  Dong-Hyun Lee ,  Jong-Ryuk Park ,  Tak-Young Lee ,  Jae-Wan Jung

发明人： Seung-Kyu Park ,  Ki-Yong Lee ,  Jin-Wook Seo ,  Min-Jae Jeong ,  Yun-Mo Chung ,  Yong-Duck Son ,  Byung-Soo So ,  Byoung-Keon Park ,  Kil-Won Lee ,  Dong-Hyun Lee ,  Jong-Ryuk Park ,  Tak-Young Lee ,  Jae-Wan Jung

IPC分类号： H01L21/336 ,  H01L21/20

CPC分类号： H01L29/66757 ,  H01L21/02422 ,  H01L21/02488 ,  H01L21/02491 ,  H01L21/02502 ,  H01L21/02532 ,  H01L21/02672 ,  H01L27/1277 ,  H01L29/78609 ,  H01L29/78675

摘要： A method of crystallizing a silicon layer and a method of manufacturing a TFT, the method of crystallizing a silicon layer including forming a catalyst metal layer on a substrate; forming a catalyst metal capping pattern on the catalyst metal layer; forming a second amorphous silicon layer on the catalyst metal capping pattern; and heat-treating the second amorphous silicon layer to form a polycrystalline silicon layer.

摘要翻译： 一种使硅层结晶的方法和制造TFT的方法，包括在衬底上形成催化剂金属层的硅层结晶的方法; 在催化剂金属层上形成催化剂金属封盖图案; 在所述催化剂金属封盖图案上形成第二非晶硅层; 并对第二非晶硅层进行热处理以形成多晶硅层。

公开(公告)号：US20110227079A1

公开(公告)日：2011-09-22

申请号：US13036241

申请日：2011-02-28

申请人： Yong-Duck SON ,  Ki-Yong Lee ,  Jin-Wook Seo ,  Min-Jae Jeong ,  Byung-Soo So ,  Seung-Kyu Park ,  Kil-Won Lee ,  Yun-Mo Chung ,  Byoung-Keon Park ,  Dong-Hyun Lee ,  Jong-Ryuk Park ,  Tak-Young Lee ,  Jae-Wan Jung

发明人： Yong-Duck SON ,  Ki-Yong Lee ,  Jin-Wook Seo ,  Min-Jae Jeong ,  Byung-Soo So ,  Seung-Kyu Park ,  Kil-Won Lee ,  Yun-Mo Chung ,  Byoung-Keon Park ,  Dong-Hyun Lee ,  Jong-Ryuk Park ,  Tak-Young Lee ,  Jae-Wan Jung

IPC分类号： H01L33/16 ,  H01L29/04 ,  H01L21/336 ,  H01L33/00

CPC分类号： H01L27/1214 ,  H01L27/1255 ,  H01L29/66757

摘要： A thin film transistor including: an active layer formed on a substrate; a gate insulating layer pattern formed on a predetermined region of the active layer; a gate electrode formed on a predetermined region of the gate insulating layer pattern; an etching preventing layer pattern covering the gate insulating layer pattern and the gate electrode; and a source member and a drain member formed on the active layer and the etching preventing layer pattern.

摘要翻译： 一种薄膜晶体管，包括：形成在基板上的有源层; 形成在有源层的预定区域上的栅极绝缘层图案; 形成在栅极绝缘层图案的预定区域上的栅电极; 覆盖所述栅极绝缘层图案和所述栅电极的防蚀层图案; 以及形成在有源层和防蚀层图案上的源极部件和漏极部件。

公开(公告)号：US07915613B2

公开(公告)日：2011-03-29

申请号：US11758976

申请日：2007-06-06

申请人： Seung-Kyu Park

发明人： Seung-Kyu Park

IPC分类号： H01L29/10

CPC分类号： H01L27/3258 ,  H01L27/3213 ,  H01L27/322 ,  H01L51/5209

摘要： Disclosed is an organic light emitting display device including a substrate having a plurality of sub-pixel areas, a switching thin film transistor formed on each of the sub-pixel areas, a driving thin film transistor connected to the switching thin film transistor, a color filter formed on at least one of sub-pixel areas, an insulating layer formed on the switching thin film transistor, the driving thin film transistor and the color filter, a pixel electrode connected to the driving thin film transistor, an organic light emitting member formed on the pixel electrode, and a common electrode formed on the organic light emitting member. The insulating layer has a groove. The groove is formed along a boundary of the pixel electrode. The groove has a width of about 0.2 to about 4 μm. The groove has a depth of about 0.2 to about 4 μm. The pixel electrode has an edge declined in the groove.

摘要翻译： 公开了一种有机发光显示装置，包括具有多个子像素区域的基板，形成在每个子像素区域上的开关薄膜晶体管，连接到开关薄膜晶体管的驱动薄膜晶体管，颜色 在至少一个子像素区域上形成的滤光器，形成在开关薄膜晶体管上的绝缘层，驱动薄膜晶体管和滤色器，连接到驱动薄膜晶体管的像素电极，形成有机发光元件 在像素电极上形成的公共电极和形成在有机发光部件上的公共电极。 绝缘层具有凹槽。 沿着像素电极的边界形成凹槽。 槽的宽度为约0.2至约4μm。 凹槽具有约0.2至约4μm的深度。 像素电极具有在凹槽中下降的边缘。

公开(公告)号：US08860032B2

公开(公告)日：2014-10-14

申请号：US12466100

申请日：2009-05-14

申请人： Byoung-Kwon Choo ,  Joon-Hoo Choi ,  Kyu-Sik Cho ,  Seung-Kyu Park ,  Yong-Hwan Park ,  Sang-Ho Moon

发明人： Byoung-Kwon Choo ,  Joon-Hoo Choi ,  Kyu-Sik Cho ,  Seung-Kyu Park ,  Yong-Hwan Park ,  Sang-Ho Moon

IPC分类号： H01L27/14 ,  H01L27/12 ,  H01L29/786

CPC分类号： H01L27/124 ,  H01L27/1296 ,  H01L29/786

摘要： A thin film transistor substrate that includes a substrate, first and second gate electrodes that are formed on the substrate, a gate insulating layer that is formed on the first and second gate electrodes, a first semiconductor and a second semiconductor that are formed on the gate insulating layer, and that overlap the first gate electrode and the second gate electrode, respectively, a first source electrode and a first drain electrode that are formed on the first semiconductor, and positioned opposed to and spaced from each other, a source electrode connected to the first drain electrode and a second drain electrode positioned opposed to and spaced from the second source electrode, wherein the second source and second drain electrodes are formed on the second semiconductor, and a pixel electrode that is electrically connected to the second drain electrode, a method of manufacturing the same, and a display apparatus having the same.

摘要翻译： 一种薄膜晶体管基板，包括基板，形成在基板上的第一和第二栅电极，形成在第一和第二栅电极上的栅极绝缘层，形成在栅极上的第一半导体和第二半导体 绝缘层，并且分别与第一栅电极和第二栅电极重叠，形成在第一半导体上并且彼此相对并且彼此分开定位的第一源电极和第一漏电极，源电极连接到 所述第一漏电极和与所述第二源电极相对并间隔开的第二漏电极，其中所述第二源电极和所述第二漏电极形成在所述第二半导体上，以及像素电极，其电连接到所述第二漏电极， 其制造方法以及具有该显示装置的显示装置。

公开(公告)号：US08771031B2

公开(公告)日：2014-07-08

申请号：US13312063

申请日：2011-12-06

申请人： Seung-Kyu Park

发明人： Seung-Kyu Park

IPC分类号： H01J9/00

CPC分类号： H01L27/3276 ,  H01L51/524 ,  H01L51/56 ,  H01L2251/566

摘要： A method of manufacturing an organic light-emitting display apparatus includes: preparing a substrate including a display unit and peripheral parts; forming a cutting line on an encapsulation sheet to correspond to a boundary line between the display unit and the peripheral parts, wherein a size of the encapsulation sheet corresponds to that of the substrate; adhering the substrate and the encapsulation sheet together; removing the peripheral parts of the substrate; and cutting the encapsulation sheet along the cutting line. According to the method, a step height is not generated between the substrate and the encapsulation sheet when cutting the substrate and thus cracks may be avoided. Accordingly, products may be stably produced.

摘要翻译： 一种制造有机发光显示装置的方法包括：制备包括显示单元和外围部分的基板; 在封装片上形成切割线以对应于显示单元和周边部分之间的边界线，其中封装片的尺寸对应于衬底的尺寸; 将基板和封装片粘合在一起; 去除衬底的周边部分; 并沿切割线切割封装片。 根据该方法，当切割基板时，在基板和封装片之间不产生台阶高度，因此可以避免裂纹。 因此，可以稳定地制造产品。

公开(公告)号：US08384087B2

公开(公告)日：2013-02-26

申请号：US12805995

申请日：2010-08-27

申请人： Yong-Duck Son ,  Ki-Yong Lee ,  Joon-Hoo Choi ,  Min-Jae Jeong ,  Seung-Kyu Park ,  Kil-Won Lee ,  Jae-Wan Jung ,  Dong-Hyun Lee ,  Byung-Soo So ,  Hyun-Woo Koo ,  Ivan Maidanchuk ,  Jong-Won Hong ,  Heung-Yeol Na ,  Seok-Rak Chang

发明人： Yong-Duck Son ,  Ki-Yong Lee ,  Joon-Hoo Choi ,  Min-Jae Jeong ,  Seung-Kyu Park ,  Kil-Won Lee ,  Jae-Wan Jung ,  Dong-Hyun Lee ,  Byung-Soo So ,  Hyun-Woo Koo ,  Ivan Maidanchuk ,  Jong-Won Hong ,  Heung-Yeol Na ,  Seok-Rak Chang

IPC分类号： H01L27/14

CPC分类号： H01L29/66757 ,  H01L27/1277 ,  H01L27/3262

摘要： A thin film transistor includes a substrate, a buffer layer on the substrate, a semiconductor layer including source/drain regions and a channel region on the buffer layer, a gate insulating layer corresponding to the channel region, a gate electrode corresponding to the channel region, and source/drain electrodes electrically connected to the semiconductor layer. A polysilicon layer of the channel region may include only a low angle grain boundary, and a high angle grain boundary may be disposed in a region of the semiconductor layer that is apart from the channel region.

摘要翻译： 薄膜晶体管包括衬底，衬底上的缓冲层，包括源极/漏极区域和缓冲层上的沟道区域的半导体层，对应于沟道区域的栅极绝缘层，对应于沟道区域的栅电极 以及与半导体层电连接的源极/漏极。 沟道区域的多晶硅层可以仅包括低角度晶界，并且可以在离开沟道区域的半导体层的区域中设置高角度晶界。

公开(公告)号：US08039841B2

公开(公告)日：2011-10-18

申请号：US12347053

申请日：2008-12-31

申请人： Seung-Kyu Park

发明人： Seung-Kyu Park

IPC分类号： H01L27/32 ,  H01L51/50

CPC分类号： H01L27/3248 ,  H01L27/3211 ,  H01L27/326 ,  H01L51/5271

摘要： An organic light-emitting diode (“OLED”) display includes a first thin film transistor disposed on a substrate; a first insulating layer disposed on the first thin film transistor; a reflective electrode disposed on the first insulating layer; a common voltage line disposed on the first insulating layer and separated from the reflective electrode; a second insulating layer disposed on the reflective electrode and the common voltage line; a pixel electrode disposed on the second insulating layer and electrically connected to the first thin film transistor; an organic light-emitting member disposed on the pixel electrode; and a common electrode disposed on the organic light-emitting member, wherein the common voltage line is electrically connected to the common electrode.

摘要翻译： 有机发光二极管（“OLED”）显示器包括设置在基板上的第一薄膜晶体管; 设置在所述第一薄膜晶体管上的第一绝缘层; 设置在所述第一绝缘层上的反射电极; 设置在第一绝缘层上并与反射电极分离的公共电压线; 设置在所述反射电极和所述公共电压线上的第二绝缘层; 像素电极，设置在所述第二绝缘层上并电连接到所述第一薄膜晶体管; 设置在所述像素电极上的有机发光部件; 以及设置在有机发光部件上的公共电极，其中，公共电压线与公共电极电连接。

公开(公告)号：US20110227078A1

公开(公告)日：2011-09-22

申请号：US13034818

申请日：2011-02-25

申请人： Byoung-Keon PARK ,  Jin-Wook Seo ,  Ki-Yong Lee ,  Yun-Mo Chung ,  Jong-Ryuk Park ,  Tak-Young Lee ,  Dong-Hyun Lee ,  Kil-Won Lee ,  Byung-Soo So ,  Min-Jae Jeong ,  Yong-Duck Son ,  Seung-Kyu Park ,  Jae-Wan Jung

发明人： Byoung-Keon PARK ,  Jin-Wook Seo ,  Ki-Yong Lee ,  Yun-Mo Chung ,  Jong-Ryuk Park ,  Tak-Young Lee ,  Dong-Hyun Lee ,  Kil-Won Lee ,  Byung-Soo So ,  Min-Jae Jeong ,  Yong-Duck Son ,  Seung-Kyu Park ,  Jae-Wan Jung

IPC分类号： H01L51/56 ,  H01L51/52

CPC分类号： H01L27/3262 ,  H01L27/12 ,  H01L27/1248 ,  H01L27/3258 ,  H01L27/326

摘要： A display device including: a substrate; a first semiconductor layer disposed on the substrate; a second semiconductor layer disposed on the substrate and adjacent to the first semiconductor layer; a first insulation layer disposed on both the first semiconductor layer and the second semiconductor layer, the first insulation layer including a first opening forming a space between the first semiconductor layer and the second semiconductor layer; and a second insulation layer disposed on the first insulation layer and that fills the first opening.

摘要翻译： 一种显示装置，包括：基板; 设置在所述基板上的第一半导体层; 设置在所述基板上并与所述第一半导体层相邻的第二半导体层; 设置在第一半导体层和第二半导体层两者上的第一绝缘层，第一绝缘层包括在第一半导体层和第二半导体层之间形成空间的第一开口; 以及设置在第一绝缘层上并填充第一开口的第二绝缘层。

公开(公告)号：US20110220878A1

公开(公告)日：2011-09-15

申请号：US12926210

申请日：2010-11-02

申请人： Tak-Young Lee ,  Byoung-Keon Park ,  Yun-Mo Chung ,  Jong-Ryuk Park ,  Dong-Hyun Lee ,  Ki-Yong Lee ,  Jin-Wook Seo ,  Min-Jae Jeong ,  Young-Duck Son ,  Byung-Soo So ,  Seung-Kyu Park ,  Kil-Won Lee ,  Jae-Wan Jung

发明人： Tak-Young Lee ,  Byoung-Keon Park ,  Yun-Mo Chung ,  Jong-Ryuk Park ,  Dong-Hyun Lee ,  Ki-Yong Lee ,  Jin-Wook Seo ,  Min-Jae Jeong ,  Young-Duck Son ,  Byung-Soo So ,  Seung-Kyu Park ,  Kil-Won Lee ,  Jae-Wan Jung

IPC分类号： H01L51/00 ,  H01L29/772 ,  H01L21/336

CPC分类号： H01L29/78645

摘要： A thin film transistor (TFT) includes a substrate, and an active region on the substrate including source and drain regions at opposing ends of the active region, a lightly doped region adjacent to at least one of the source region and the drain region, a plurality of channel regions, and a highly doped region between two channel regions of the plurality of channel regions. The TFT includes a gate insulation layer on the active region, and a multiple gate electrode having a plurality of gate electrodes on the gate insulation layer, the plurality of channel regions being disposed below corresponding gate electrodes, and the source region and the drain region being disposed adjacent to outermost portions of the multiple gate electrode. The TFT includes a first interlayer insulation layer on the multiple gate electrode, and source and drain electrodes extending through the first interlayer insulation layer and contacting the respective source and drain regions.

摘要翻译： 薄膜晶体管（TFT）包括衬底，并且衬底上的有源区域包括在有源区的相对端处的源极和漏极区域，与源区域和漏极区域中的至少一个相邻的轻掺杂区域， 多个沟道区，以及多个沟道区的两个沟道区之间的高掺杂区。 TFT包括在有源区上的栅极绝缘层和在栅绝缘层上具有多个栅电极的多栅电极，多个沟道区设置在相应的栅极下方，源区和漏区为 邻近多栅电极的最外部设置。 TFT包括在多栅电极上的第一层间绝缘层，以及延伸穿过第一层间绝缘层并与相应的源极和漏极区接触的源极和漏极。

公开(公告)号：US20110114963A1

公开(公告)日：2011-05-19

申请号：US12805995

申请日：2010-08-27

申请人： Yong-Duck Son ,  Ki-Yong Lee ,  Joon-Hoo Choi ,  Min-Jae Jeong ,  Seung-Kyu Park ,  Kil-Won Lee ,  Jae-Wan Jung ,  Dong-Hyun Lee ,  Byung-Soo So ,  Hyun-Woo Koo ,  Ivan Maidanchuk ,  Jong-Won Hong ,  Heung-Yeol Na ,  Seok-Rak Chang

发明人： Yong-Duck Son ,  Ki-Yong Lee ,  Joon-Hoo Choi ,  Min-Jae Jeong ,  Seung-Kyu Park ,  Kil-Won Lee ,  Jae-Wan Jung ,  Dong-Hyun Lee ,  Byung-Soo So ,  Hyun-Woo Koo ,  Ivan Maidanchuk ,  Jong-Won Hong ,  Heung-Yeol Na ,  Seok-Rak Chang

IPC分类号： H01L51/52 ,  H01L29/786 ,  H01L21/336

CPC分类号： H01L29/66757 ,  H01L27/1277 ,  H01L27/3262

摘要： A thin film transistor includes a substrate, a buffer layer on the substrate, a semiconductor layer including source/drain regions and a channel region on the buffer layer, a gate insulating layer corresponding to the channel region, a gate electrode corresponding to the channel region, and source/drain electrodes electrically connected to the semiconductor layer. A polysilicon layer of the channel region may include only a low angle grain boundary, and a high angle grain boundary may be disposed in a region of the semiconductor layer that is apart from the channel region.

摘要翻译： 薄膜晶体管包括衬底，衬底上的缓冲层，包括源极/漏极区域和缓冲层上的沟道区域的半导体层，对应于沟道区域的栅极绝缘层，对应于沟道区域的栅电极 以及与半导体层电连接的源极/漏极。 沟道区域的多晶硅层可以仅包括低角度晶界，并且可以在离开沟道区域的半导体层的区域中设置高角度晶界。