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315 条记录 (耗时 0.052 秒)

    MOSFET with a thin gate insulating film
    22.
    发明授权
    MOSFET with a thin gate insulating film 失效
    具有薄栅绝缘膜的MOSFET

    公开(公告)号：US06929990B2

    公开(公告)日：2005-08-16

    申请号：US10681318

    申请日：2003-10-09

    申请人： Hisayo Momose ,  Hiroshi Iwai ,  Masanobu Saito ,  Tatsuya Ohguro ,  Mizuki Ono ,  Takashi Yoshitomi ,  Shinichi Nakamura

    发明人： Hisayo Momose ,  Hiroshi Iwai ,  Masanobu Saito ,  Tatsuya Ohguro ,  Mizuki Ono ,  Takashi Yoshitomi ,  Shinichi Nakamura

    IPC分类号： H01L21/225 ,  H01L21/336 ,  H01L27/088 ,  H01L29/423 ,  H01L29/76 ,  H01L29/78

    CPC分类号： H01L29/66575 ,  H01L21/2255 ,  H01L21/2256 ,  H01L21/28211 ,  H01L27/0629 ,  H01L27/088 ,  H01L29/42364 ,  H01L29/42372 ,  H01L29/78

    摘要： A semiconductor device comprises: a p-type semiconductor substrate (1); an insulating film (3); a gate electrode (2) formed on the substrate via the insulating film; and an n-type source/drain region (5) formed on both sides of a channel forming region (4) located under the gate electrode (2) formed on the substrate (1). In particular, the thickness (TOX) of the insulating film (3) is determined to be less than 2.5 nm at conversion rate of silicon oxide film (silicon oxide equivalent thickness); a gate length (Lg) of the gate electrode (2) is determined to be equal to or less than 0.3 μm; and further a voltage applied to the gate electrode (2) and the drain region (6) is determined to be 1.5 V or less. Therefore, in the MOSFET having the tunneling gate oxide film (3), the reliability of the transistor under the hot carrier stress can be improved, and the gate leakage current can be reduced markedly, so that the transistor characteristics can be improved markedly.

    摘要翻译： 半导体器件包括：p型半导体衬底（1）; 绝缘膜（3）; 经由所述绝缘膜形成在所述基板上的栅电极（2） 以及形成在形成在基板（1）上的栅电极（2）下方的沟道形成区域（4）的两侧的n型源极/漏极区域（5）。 特别地，在氧化硅膜的转换率（氧化硅当量厚度）下，确定绝缘膜（3）的厚度（T×OX ）小于2.5nm。 栅极（2）的栅极长度（L SUB）确定为等于或小于0.3μm; 并且进一步施加到栅极（2）和漏极区（6）的电压被确定为1.5V或更小。 因此，在具有隧穿栅极氧化膜（3）的MOSFET中，可以提高热载流子应力下的晶体管的可靠性，并且可以显着降低栅极漏电流，从而可以显着提高晶体管特性。

    Field-effect organic transistor
    23.
    发明授权
    Field-effect organic transistor 失效
    场效应有机晶体管

    公开(公告)号：US06875996B2

    公开(公告)日：2005-04-05

    申请号：US10847856

    申请日：2004-05-19

    申请人： Shinichi Nakamura

    发明人： Shinichi Nakamura

    IPC分类号： H01L51/05 ,  H01L29/786 ,  H01L51/00 ,  H01L51/30 ,  H01L35/24

    CPC分类号： H01L51/0052 ,  H01L51/0044 ,  H01L51/0053 ,  H01L51/0056 ,  H01L51/0058 ,  H01L51/0077 ,  H01L51/0545

    摘要： It is an object of the present invention to solve the problems of the conventional organic transistors, such as a low mobility, a high threshold voltage and fluctuation of a threshold voltage in driving for a long period. The field-effect organic transistor of the present invention comprises 3 electrodes being source, drain and gate electrodes, a gate insulating layer and an organic semiconductor layer, wherein the organic semiconductor layer contains an organic semiconductor having 2 or more repeating units, each of the repeating units having a condensed aromatic ring compound having 10 or more conjugate double bonds and 3 two-fold axes.

    摘要翻译： 本发明的目的是解决传统的有机晶体管的问题，例如低迁移率，高阈值电压和长时间驱动中阈值电压的波动。 本发明的场效应有机晶体管包括3个电极，源极，漏极和栅电极，栅极绝缘层和有机半导体层，其中有机半导体层包含具有2个或更多个重复单元的有机半导体， 具有10个以上共轭双键和3个双折轴的稠合芳环化合物的重复单元。

    LIQUID DROP DISCHARGE METHOD AND DISCHARGE DEVICE; ELECTRO OPTICAL DEVICE, METHOD OF MANUFACTURE THEREOF, AND DEVICE FOR MANUFACTURE THEREOF; COLOR FILTER METHOD OF MANUFACTURE THEREOF, AND DEVICE FOR MANUFACTURING THEREOF; AND DEVICE INCORPORATING BACKING, METHOD OF MANUFACTURING THEREOF, AND DEVICE FOR MANUFACTURE THEREOF
    25.
    发明授权
    LIQUID DROP DISCHARGE METHOD AND DISCHARGE DEVICE; ELECTRO OPTICAL DEVICE, METHOD OF MANUFACTURE THEREOF, AND DEVICE FOR MANUFACTURE THEREOF; COLOR FILTER METHOD OF MANUFACTURE THEREOF, AND DEVICE FOR MANUFACTURING THEREOF; AND DEVICE INCORPORATING BACKING, METHOD OF MANUFACTURING THEREOF, AND DEVICE FOR MANUFACTURE THEREOF 有权
    液体放电放电方法和放电装置; 电光器件，其制造方法及其制造装置; 彩色滤光片制造方法及其制造装置; 装置及其制造方法及其制造方法及其制造装置

    公开(公告)号：US06736484B2

    公开(公告)日：2004-05-18

    申请号：US10314261

    申请日：2002-12-09

    申请人： Shinichi Nakamura

    发明人： Shinichi Nakamura

    IPC分类号： B41J2145

    CPC分类号： G02F1/133516 ,  B41J2/14 ,  B41J2/15 ,  B41J2202/09 ,  G02F1/1303 ,  G02F1/1362 ,  H01L51/0005 ,  H01L51/56

    摘要： A liquid drop discharge device provides a head unit 420 which discharges filter element material relative to each of various colors of color filters. The head unit 420 is composed of an ink jet heads which are arranged on one end of a print substrate plate having a shape of rectangular card and head devices 433 which are arranged on the other end of the print substrate plate comprising connectors 441. The head devices 433 are aligned in two rows, as two groups, in a staggered arrangement so that a portion on which the connectors 441 are aligned in one of the two rows does not face to the same portion of the other in the two rows and protrudes outside of the print substrate plate. The head unit 420 discharges the filter element material onto predetermined portions in a superimposing manner while shifting along a direction which intersects to a direction along which the head devices 433 are arranged.

    摘要翻译： 液滴排放装置提供了头单元420，其相对于各种颜色的滤色器中的每一种排出过滤元件材料。 头单元420由布置在具有矩形卡的打印基板的一端上的喷墨头和设置在包括连接器441的打印基板的另一端的头装置433组成。头部 设备433以交错排列的两排排列成两组，使得连接器441在两排之一中排列的部分在两排中不面对另一列的相同部分并且突出到外侧 的印刷基板。 头单元420沿着与头部装置433布置的方向相交的方向移动，以重叠的方式将过滤元件材料排出到预定部分上。

    MOSFET with a thin gate insulating film
    29.
    发明授权
    MOSFET with a thin gate insulating film 有权

    公开(公告)号：US06410952B1

    公开(公告)日：2002-06-25

    申请号：US09828205

    申请日：2001-04-09

    申请人： Hisayo Momose ,  Hiroshi Iwai ,  Masanobu Saito ,  Tatsuya Ohguro ,  Mizuki Ono ,  Takashi Yoshitomi ,  Shinichi Nakamura

    发明人： Hisayo Momose ,  Hiroshi Iwai ,  Masanobu Saito ,  Tatsuya Ohguro ,  Mizuki Ono ,  Takashi Yoshitomi ,  Shinichi Nakamura

    IPC分类号： H01L2976

    摘要： A semiconductor device comprises: a p-type semiconductor substrate (1); an insulating film (3); a gate electrode (2) formed on the substrate via the insulating film; and an n-type source/drain region (5) formed on both sides of a channel forming region (4) located under the gate electrode (2) formed on the substrate (1). In particular, the thickness (TOX) of the insulating film (3) is determined to be less than 2.5 nm at conversion rate of silicon oxide film (silicon oxide equivalent thickness); a gate length (Lg) of the gate electrode (2) is determined to be equal to or less than 0.3 &mgr;m; and further a voltage applied to the gate electrode (2) and the drain region (6) is determined to be 1.5 V or less. Therefore, in the MOSFET having the tunneling gate oxide film (3), the reliability of the transistor under the hot carrier stress can be improved, and the gate leakage current can be reduced markedly, so that the transistor characteristics can be improved markedly.

    Dam fed unrollable media filter subsequently folded along its length and rewound
    30.
    发明授权
    Dam fed unrollable media filter subsequently folded along its length and rewound 失效
    大坝送入无法播放的媒体过滤器随后沿其长度折叠并重新卷绕

    公开(公告)号：US06273270B1

    公开(公告)日：2001-08-14

    申请号：US09631535

    申请日：2000-08-03

    申请人： Shinichi Nakamura ,  Kunihiko Fukuzuka

    发明人： Shinichi Nakamura ,  Kunihiko Fukuzuka

    IPC分类号： C02F1112

    CPC分类号： B01D29/093 ,  B01D29/826 ,  B01D33/04 ,  B01D33/0565 ,  B01D33/646

    摘要： According to a waste water treatment method and apparatus of the present invention, a permeable sheet 3 is fed into a treatment tank 2 in which a stream is formed. The waste water, which flows downstream, is caused to pass through the permeable sheet 3, while the permeable sheet 3 travels in the treatment tank 2 so as to traverse the surface of the waste water on a downstream side in the flowing direction of the waste water. Therefore, not only the sludge in the waste water but also the oily substances floating in the waste water can be collected and removed because they cling to the permeable sheet 3 and are gathered by it. As a result, a waste water treatment tank 2 and the like can be maintained in a usable state for a long time. In addition, there can be obtained a treated water to which microbial treatment can be applied.

    摘要翻译： 根据本发明的废水处理方法和装置，将可渗透片3供给到形成有流的处理槽2中。 使下游流动的废水通过可渗透片材3，同时可渗透片材3在处理槽2中行进，以便在废物的流动方向的下游侧横过废水的表面 水。 因此，不仅可以将废水中的污泥和漂浮在废水中的油性物质收集除去，因为它们粘附在可渗透片材3上并被其收集。 结果，废水处理槽2等可以长时间保持在可使用状态。 此外，可以获得可以应用微生物处理的处理水。