公开(公告)号：US08143109B2

公开(公告)日：2012-03-27

申请号：US12965928

申请日：2010-12-13

Applicant: Shuo-Ting Yan

Inventor： Shuo-Ting Yan

IPC: H01L21/82

CPC classification number: H01L21/7682 ,  H01L21/76802 ,  H01L23/5222 ,  H01L23/53295 ,  H01L2924/0002 ,  H01L2924/00

Abstract: An exemplary method for fabricating a damascene interconnect structure includes the following. First, providing a substrate. Second, depositing a multilayer dielectric film on the substrate. Third, forming a patterned photoresist on the multilayer dielectric film. Fourth, etching the multilayer dielectric film to form a plurality of trenches, a portion of each of the trenches having an enlarged width at each of sidewalls thereof. Fifth, filling the trenches with conductive metal to form conductive lines such that air is trapped in extremities of the enlarged width portions of the trenches.

Abstract translation: 用于制造镶嵌互连结构的示例性方法包括以下。 首先，提供基板。 其次，在基板上沉积多层电介质膜。 第三，在多层电介质膜上形成图案化的光致抗蚀剂。 第四，蚀刻多层介电膜以形成多个沟槽，每个沟槽的一部分在其每个侧壁处具有扩大的宽度。 第五，用导电金属填充沟槽以形成导电线，使得空气被捕获在沟槽的扩大宽度部分的末端。

公开(公告)号：US20120043212A1

公开(公告)日：2012-02-23

申请号：US12961259

申请日：2010-12-06

Applicant: Wei-Li HONG ,  Yuan Yu Tsai ,  Yueh-Chu Tien ,  Shuo-Ting Yan ,  Sy-Haw Wang

Inventor： Wei-Li HONG ,  Yuan Yu Tsai ,  Yueh-Chu Tien ,  Shuo-Ting Yan ,  Sy-Haw Wang

IPC: G01N27/00

CPC classification number: G01N27/44721

Abstract: A real-time fluorescent electrophoresis apparatus, comprising: an electrophoresis tank comprising a platform, an electrophoresis liquid, a positive electrode and a negative electrode, the platform carrying a gel with a biological sample, the gel comprising a plurality of charged molecules of the biological sample, and the gel, the platform, the positive electrode and the negative electrode being immersed in the electrophoresis liquid; and a lid covering the electrophoresis tank and comprising a filter disposed above the gel and at least one luminous element disposed on at least one side of the filter to irradiate the gel so that the biological sample in the gel is excited to fluoresce. Thereby, the experimenter is able to observe fluorescence phenomenon from the biological sample during electrophoresis so as to trace the electrophoresis process and determine whether the electrophoresis process is to be interrupted and avoid experimental errors.

Abstract translation: 一种实时荧光电泳装置，包括：电泳槽，包括平台，电泳液，正极和负极，所述平台携带具有生物样品的凝胶，所述凝胶包含多个生物体的带电分子 样品，凝胶，平台，正极和负极浸入电泳液中; 以及覆盖所述电泳槽的盖子，并且包括设置在所述凝胶上方的过滤器和设置在所述过滤器的至少一侧上的至少一个发光元件以照射所述凝胶，使得所述凝胶中的生物样品被激发发荧光。 因此，实验者能够在电泳过程中观察生物样品的荧光现象，从而追踪电泳过程，并确定电泳过程是否被中断，避免实验误差。

公开(公告)号：US07786420B2

公开(公告)日：2010-08-31

申请号：US12001552

申请日：2007-12-11

Applicant: Shuo-Ting Yan ,  Tsau-Hua Hsieh

Inventor： Shuo-Ting Yan ,  Tsau-Hua Hsieh

IPC: G09G3/36 ,  G01J1/44 ,  H05B37/02

CPC classification number: H05B33/0851 ,  G01J1/32 ,  H05B37/0218 ,  Y02B20/46

Abstract: An exemplary light source device (10) includes a power supply (12), a light source (14), and a photodetector (16). The photodetector includes a light sensor (17) and a resistor (18) connected in parallel. The power supply, the light source, and the photodetector are connected in series. When the intensity of ambient light increases, a resistance of the light sensor decreases so as to increase a light intensity of the light source. When the intensity of ambient light decreases, the resistance of the light sensor increases so as to decrease the light intensity of the light source.

Abstract translation: 示例性光源装置（10）包括电源（12），光源（14）和光电检测器（16）。 光电检测器包括并联连接的光传感器（17）和电阻器（18）。 电源，光源和光电检测器串联连接。 当环境光的强度增加时，光传感器的电阻降低，从而增加光源的光强度。 当环境光的强度降低时，光传感器的电阻增加，从而降低光源的光强度。

公开(公告)号：US20100103086A1

公开(公告)日：2010-04-29

申请号：US12589602

申请日：2009-10-26

Applicant: Shuo-Ting Yan ,  Chih-Hao Chen ,  Wen Hsiung Liu ,  Eddy Giing-Lii Chen ,  Tsau-Hua Hsieh

Inventor： Shuo-Ting Yan ,  Chih-Hao Chen ,  Wen Hsiung Liu ,  Eddy Giing-Lii Chen ,  Tsau-Hua Hsieh

IPC: G09G3/36

CPC classification number: G09G3/3614 ,  G09G3/3648 ,  G09G2300/0439

Abstract: A liquid crystal display panel includes a display area. The display area includes a first scanning line, two second scanning lines, and a number of pixel units arranged in two rows and a number of columns. The number of columns include a number of first columns and a number of second columns arranged alternately. The pixel units arranged in the number of first columns are controlled via the first scanning line, and the two pixel units arranged in each of the number of second columns are controlled via the two second scanning lines correspondingly.

Abstract translation: 液晶显示面板包括显示区域。 显示区域包括第一扫描线，两个第二扫描线和排列成两行和多列的多个像素单元。 列数包括交替布置的多个第一列和多个第二列。 通过第一扫描线控制以第一列数排列的像素单元，并且相应地经由两个第二扫描线来控制布置在每个第二列中的两个像素单元。

公开(公告)号：US20100053530A1

公开(公告)日：2010-03-04

申请号：US12583467

申请日：2009-08-21

Applicant: Jen-Chieh Peng ,  Shuo-Ting Yan ,  Tsau-Hua Hsieh ,  Chao-Yi Hung

Inventor： Jen-Chieh Peng ,  Shuo-Ting Yan ,  Tsau-Hua Hsieh ,  Chao-Yi Hung

IPC: G02F1/1343 ,  G02F1/13

CPC classification number: G02F1/136286

Abstract: The present invention relates to a TFT substrate and a manufacture method thereof. The TFT substrate includes a substrate, a plurality of signal lines, a common electrode, and a pixel electrode. The signal lines are arranged on the substrate along two perpendicular directions. One of two signal lines perpendicular to each other includes a plurality of segments. Every two segments closed to each other are arranged on two opposite sides of the other signal line of the two signal lines. The TFT substrate further includes a connecting signal line. The connecting signal line is connected to the two segments of the signal line composing a plurality of segments. The common electrode is arranged in a same layer as the connecting signal line and overlaps the signal line transferring image signals along a direction perpendicular to the substrate.

Abstract translation: TFT基板及其制造方法技术领域本发明涉及TFT基板及其制造方法。 TFT基板包括基板，多条信号线，公共电极和像素电极。 信号线沿着两个垂直方向布置在基板上。 彼此垂直的两条信号线之一包括多个段。 彼此闭合的每两个区段布置在两条信号线的另一个信号线的两个相对侧上。 TFT基板还包括连接信号线。 连接信号线连接到构成多个段的信号线的两个段。 公共电极布置在与连接信号线相同的层中，并且与沿着垂直于衬底的方向传送图像信号的信号线重叠。

公开(公告)号：US20080308808A1

公开(公告)日：2008-12-18

申请号：US12214177

申请日：2008-06-16

Applicant: Chih-Chieh Hsu ,  Shuo-Ting Yan

Inventor： Chih-Chieh Hsu ,  Shuo-Ting Yan

IPC: H01L29/786 ,  H01L21/336

CPC classification number: H01L29/78696 ,  H01L27/1214 ,  H01L29/66765 ,  H01L29/78618 ,  H01L29/78669

Abstract: An exemplary TFT array substrate includes an insulating substrate, a gate electrode provided on the insulating substrate, a gate insulating layer covering the gate electrode and the insulating layer, an amorphous silicon (a-Si) pattern formed on the gate insulating layer, a heavily doped a-Si pattern formed on the a-Si pattern, a source electrode formed on the gate insulating layer and the heavily doped a-Si pattern and a drain electrode formed on the gate insulating layer and the heavily doped a-Si pattern. The source electrode and the drain electrode are isolated by a slit formed between the source electrode and the drain electrode, and the a-Si pattern includes a high resistivity portion corresponding to the slit whose resistance is higher than a resistance of the a-Si material.

Abstract translation: 示例性TFT阵列基板包括绝缘基板，设置在绝缘基板上的栅电极，覆盖栅电极和绝缘层的栅极绝缘层，形成在栅极绝缘层上的非晶硅（a-Si）图案， 形成在a-Si图案上的掺杂a-Si图案，形成在栅极绝缘层上的源电极和重掺杂的a-Si图案以及形成在栅极绝缘层和重掺杂a-Si图案上的漏电极。 源电极和漏电极由形成在源电极和漏极之间的狭缝隔离，并且a-Si图案包括对应于电阻高于a-Si材料的电阻的狭缝的高电阻率部分 。

公开(公告)号：US20080238702A1

公开(公告)日：2008-10-02

申请号：US12080032

申请日：2008-03-31

Applicant: Shuo-Ting Yan

Inventor： Shuo-Ting Yan

IPC: G08B21/00 ,  H01L21/00

CPC classification number: H01L23/60 ,  H01L21/6732 ,  H01L21/67742 ,  H01L21/67766 ,  H01L2924/0002 ,  H01L2924/00

Abstract: An exemplary electrostatic discharge protection device includes: an electrostatic discharge part configured for discharging electrostatic when the electrostatic is larger than a threshold value; and a light emitting part configured for emitting light when electrostatic discharge happens.

Abstract translation: 示例性的静电放电保护装置包括：静电放电部，被配置为当静电大于阈值时静电放电; 以及配置为当发生静电放电时发光的发光部。

公开(公告)号：US20080158446A1

公开(公告)日：2008-07-03

申请号：US12005930

申请日：2007-12-29

Applicant: Shuo-Ting Yan

Inventor： Shuo-Ting Yan

IPC: H04N5/64

CPC classification number: H04N5/655 ,  B62B5/04 ,  B62B5/0404 ,  B62B5/0485 ,  F16M11/10 ,  F16M11/18 ,  F16M11/42 ,  F16M2200/022 ,  F16M2200/027

Abstract: An exemplary display device (2) includes a display body (22) and a support body (23) configured for supporting and moving the display body. The support body includes at least one trolley wheel assembly (28) capable of moving horizontally, and at least one stopper (380) corresponding to the trolley wheel assembly, which is capable of braking the trolley wheel assembly. The display body is moved horizontally when the trolley wheel assembly is moved horizontally.

Abstract translation: 示例性显示装置（2）包括显示体（22）和被配置为支撑和移动显示体的支撑体（23）。 支撑体包括能够水平移动的至少一个滑轮组件（28）和对应于手推车轮组件的至少一个止动件（380），其能够制动手推车轮组件。 当手推车轮组件水平移动时，显示体水平移动。

公开(公告)号：US20080119017A1

公开(公告)日：2008-05-22

申请号：US11985983

申请日：2007-11-19

Applicant: Shuo-Ting Yan

Inventor： Shuo-Ting Yan

IPC: H01L21/00

CPC classification number: H01L29/4908 ,  H01L27/1288 ,  H01L29/66765

Abstract: An exemplary method for manufacturing a thin film transistor includes: forming at least two photo-resist layers on a substrate, a developing speed of an upper one of the photo-resist layers being less than that of each photo-resist layer below said upper one of the photo-resist layers; exposing and developing the photo-resist layers, thereby forming residual photo-resist layers having a reduced width from top to bottom; subsequently depositing a plurality of metal layers on the substrate having the residual photo-resist layers; removing the residual photo-resist layers and the metal layers deposited on the photo-resist layers, thereby forming a gate electrode which includes residual metal layers and which has an increased width from top to bottom; forming a gate insulation layer on the substrate having the gate electrode; forming a semiconductor layer on the gate insulation layer; and forming a source electrode and a drain electrode on the semiconductor layer.

Abstract translation: 用于制造薄膜晶体管的示例性方法包括：在基板上形成至少两个光致抗蚀剂层，其中上一个光致抗蚀剂层的显影速度小于在所述上一个下面的每个光致抗蚀剂层的显影速度 的光致抗蚀剂层; 曝光和显影光致抗蚀剂层，从而形成从顶部到底部具有减小的宽度的残留光致抗蚀剂层; 随后在具有残留光致抗蚀剂层的基板上沉积多个金属层; 去除残留的光致抗蚀剂层和沉积在光致抗蚀剂层上的金属层，由此形成包括残留金属层并且具有从顶部到底部的宽度增加的栅电极; 在具有栅电极的基板上形成栅极绝缘层; 在栅极绝缘层上形成半导体层; 以及在所述半导体层上形成源电极和漏电极。

公开(公告)号：US20070252148A1

公开(公告)日：2007-11-01

申请号：US11796778

申请日：2007-04-30

Applicant: Shuo-Ting Yan

Inventor： Shuo-Ting Yan

IPC: H01L29/04

CPC classification number: H01L29/42384 ,  H01L29/4908 ,  H01L29/66757

Abstract: An exemplary TFT substrate (300) includes a substrate (310), a silicon layer (320), a insulating layer (330, 340), and a metal layer (350), the metal layer, the insulating layer, the silicon layer being formed on the substrate in that order from top to bottom. The insulating layer comprises a first insulating layer (330) and a second insulating (340), the second insulating layer covering part of the first insulating layer.

Abstract translation: 示例性TFT基板（300）包括基板（310），硅层（320），绝缘层（330,340）和金属层（350），金属层，绝缘层，硅层为 从上到下依次形成在基板上。 绝缘层包括第一绝缘层（330）和第二绝缘层（340），第二绝缘层覆盖第一绝缘层的一部分。