公开(公告)号：US20240014027A1

公开(公告)日：2024-01-11

申请号：US18470975

申请日：2023-09-20

Applicant: Soitec

Inventor： Pascal Guenard ,  Marcel Broekaart ,  Thierry Barge

IPC: H01L21/02 ,  H10N30/50 ,  H10N30/072 ,  H10N30/853

CPC classification number: H01L21/02002 ,  H10N30/50 ,  H10N30/072 ,  H10N30/8542 ,  H01L21/02367 ,  H01L21/02436 ,  H03H9/02574

Abstract: A method for manufacturing a substrate includes the following steps: (a) providing a support substrate with a first coefficient of thermal expansion, having on one of its faces a first plurality of trenches parallel to each other in a first direction, and a second plurality of trenches parallel to each other in a second direction; (b) transferring a useful layer from a donor substrate to the support substrate, the useful layer having a second coefficient of thermal expansion; wherein an intermediate layer is inserted between the front face of the support substrate and the useful layer, the intermediate layer having a coefficient of thermal expansion between the first and second coefficients of thermal expansion.

公开(公告)号：US20230253949A1

公开(公告)日：2023-08-10

申请号：US18302878

申请日：2023-04-19

Applicant: Soitec

Inventor： Pascal Guenard ,  Ionut Radu

IPC: H03H9/02 ,  H03H3/10 ,  H10N30/02 ,  H10N30/086 ,  H10N30/87 ,  H10N30/88 ,  H03H9/145

CPC classification number: H03H9/02834 ,  H03H3/10 ,  H03H9/02574 ,  H10N30/02 ,  H10N30/086 ,  H10N30/875 ,  H10N30/883 ,  H03H9/02984 ,  H03H9/145 ,  H03H9/64

Abstract: A production method for a surface acoustic wave device comprises the following steps: a step of providing a piezoelectric substrate comprising a transducer arranged on the main front face; a step of depositing a dielectric encapsulation layer on the main front face of the piezoelectric substrate and on the transducer; and a step of assembling the dielectric encapsulation layer with the main front face of a support substrate having a coefficient of thermal expansion less than that of the piezoelectric substrate. In additional embodiments, a surface acoustic wave device comprises a layer of piezoelectric material equipped with a transducer on a main front face, arranged on a substrate support of which the coefficient of thermal expansion is less than that of the piezoelectric material. The transducer is arranged in a dielectric encapsulation layer, between the layer of piezoelectric material and the support substrate.

公开(公告)号：US10608610B2

公开(公告)日：2020-03-31

申请号：US16064419

申请日：2016-12-21

Applicant: Soitec

Inventor： Marcel Broekaart ,  Thierry Barge ,  Pascal Guenard ,  Ionut Radu ,  Eric Desbonnets ,  Oleg Kononchuk

IPC: H03H3/10 ,  H03H9/13 ,  H03H9/145 ,  H03H9/17 ,  H03H9/25 ,  H03H9/56 ,  H03H9/64 ,  H01L27/20 ,  H01L41/047 ,  H03H9/02 ,  H01L41/312 ,  H03H3/02 ,  H03H3/04 ,  H01L41/335

Abstract: A substrate for a surface acoustic wave device or bulk acoustic wave device, comprising a support substrate and an piezoelectric layer on the support substrate, wherein the support substrate comprises a semiconductor layer on a stiffening substrate having a coefficient of thermal expansion that is closer to the coefficient of thermal expansion of the material of the piezoelectric layer than that of silicon, the semiconductor layer being arranged between the piezoelectric layer and the stiffening substrate.

公开(公告)号：US20190088462A1

公开(公告)日：2019-03-21

申请号：US15743004

申请日：2016-07-13

Applicant: Soitec

Inventor： Pascal Guenard ,  Marcel Broekaart ,  Thierry Barge

IPC: H01L21/02 ,  H01L41/083 ,  H01L41/312 ,  H01L41/187

Abstract: A method for manufacturing a substrate includes the following steps: (a) providing a support substrate with a first coefficient of thermal expansion, having on one of its faces a first plurality of trenches parallel to each other in a first direction, and a second plurality of trenches parallel to each other in a second direction; (b) transferring a useful layer from a donor substrate to the support substrate, the useful layer having a second coefficient of thermal expansion; wherein an intermediate layer is inserted between the front face of the support substrate and the useful layer, the intermediate layer having a coefficient of thermal expansion between the first and second coefficients of thermal expansion.

公开(公告)号：US20180309426A1

公开(公告)日：2018-10-25

申请号：US15769684

申请日：2016-10-17

Applicant: Soitec

Inventor： Pascal Guenard ,  Ionut Radu

IPC: H03H9/02 ,  H03H3/10 ,  H01L41/053 ,  H03H9/145 ,  H01L41/047 ,  H01L41/337 ,  H01L41/23

CPC classification number: H03H9/02834 ,  H01L41/0475 ,  H01L41/0533 ,  H01L41/23 ,  H01L41/337 ,  H03H3/10 ,  H03H9/02574 ,  H03H9/02984 ,  H03H9/145 ,  H03H9/64 ,  H03H9/725

Abstract: A production method for a surface acoustic wave device comprises the following steps: a step of providing a piezoelectric substrate comprising a transducer arranged on the main front face; a step of depositing a dielectric encapsulation layer on the main front face of the piezoelectric substrate and on the transducer; and a step of assembling the dielectric encapsulation layer with the main front face of a support substrate having a coefficient of thermal expansion less than that of the piezoelectric substrate. In additional embodiments, a surface acoustic wave device comprises a layer of piezoelectric material equipped with a transducer on a main front face, arranged on a substrate support of which the coefficient of thermal expansion is less than that of the piezoelectric material. The transducer is arranged in a dielectric encapsulation layer, between the layer of piezoelectric material and the support substrate.