公开(公告)号：US07140123B2

公开(公告)日：2006-11-28

申请号：US10911622

申请日：2004-08-05

申请人： Jung Ho Lee

发明人： Jung Ho Lee

IPC分类号： F26B11/02

CPC分类号： F16C13/04 ,  D06F58/06 ,  F16C2340/00

摘要： A roller capable of easily absorbing impact transmitted thereto while maintaining a desired level of abrasion resistance, and a clothes drying apparatus provided with the roller. The roller is provided with an impact absorption enhancer capable of causing the roller to be easily elastically deformable while maintaining a desired hardness of the roller. Accordingly, it is possible to absorb intensive impact transmitted to the roller while maintaining a desired abrasion resistance of the roller.

摘要翻译： 能够容易地吸收传递到其上并同时保持所需耐磨性水平的冲击力的滚筒和设置有滚筒的衣物干燥装置。 辊设置有能够使滚子容易弹性变形同时保持辊的所需硬度的冲击吸收增强器。 因此，可以在保持辊的期望的耐磨性的同时吸收传递到辊的强烈冲击。

公开(公告)号：US06617477B2

公开(公告)日：2003-09-09

申请号：US09995798

申请日：2001-11-29

申请人： Byeong No Lee ,  Eun Joo Jang ,  Jung Ho Lee ,  Hyung Rok Kim ,  Yo Han Han ,  Hyun Kwan Shin ,  Ho Sun Lee

发明人： Byeong No Lee ,  Eun Joo Jang ,  Jung Ho Lee ,  Hyung Rok Kim ,  Yo Han Han ,  Hyun Kwan Shin ,  Ho Sun Lee

IPC分类号： C07C2700

CPC分类号： C07C29/149 ,  B01J23/72 ,  C07C31/205

摘要： A process for preparing an 1,3-alkanediol from a 3-hydroxyester includes hydrogenating a 3-hydroxyester in an alcohol-containing solvent in the presence of a hydrogenation catalyst prepared by adding an alkaline precipitator to an aqueous solution containing a copper salt to form particles, and then aging the particles following addition of colloidal silica thereto. Novel hydrogenation catalysts so prepared are also disclosed.

公开(公告)号：US5759270A

公开(公告)日：1998-06-02

申请号：US758730

申请日：1996-12-03

申请人： Jung Ho Lee

发明人： Jung Ho Lee

IPC分类号： B65H37/00 ,  B05C1/14

CPC分类号： B65H37/007 ,  Y10T156/1795 ,  Y10T156/18

摘要： This invention relates to a correction tape adhesiver for correcting a mistyped letter comprising a rotatable tape guider which may turn its direction according to the gripping posture and/or using direction of the user. Said tape guider is formed separately from the case at the backside edge thereof and combined with the guide sill so as to ensure rotation of the tape guider to the certain extent.

摘要翻译： 本发明涉及一种用于校正错字符的修正胶带粘合剂，其包括可旋转胶带导向器，其可以根据使用者的夹持姿势和/或使用方向转动其方向。 所述胶带导向器与其后侧边缘处的壳体分开形成，并与导向框架结合，以确保磁带导向器在一定程度上的旋转。

公开(公告)号：US07614261B2

公开(公告)日：2009-11-10

申请号：US11209656

申请日：2005-08-24

申请人： Je Jun Oh ,  Hyoung Hoon Roh ,  Jung Ho Lee

发明人： Je Jun Oh ,  Hyoung Hoon Roh ,  Jung Ho Lee

IPC分类号： D06F25/00

CPC分类号： D06F37/26

摘要： A drum type washing machine includes a water tub adapted to contain wash water therein, and the water tub has first and second vent holes to circulate air to and from the water tub. The first vent hole is positioned higher than the second vent hole. Thereby, outside air is introduced into the water tub via the second vent hole, and interior air of the water tub is discharged to the outside of the water tub via the first vent hole, thereby allowing the relative humidity inside the water tub to be effectively lowered by virtue of air circulation.

摘要翻译： 滚筒式洗衣机包括适于在其中容纳洗涤水的水桶，并且水桶具有第一和第二通气孔，以使空气向水桶循环。 第一通气孔定位成高于第二通气孔。 由此，外部空气经由第二通气孔引入水槽，水槽的内部空气经由第一通气孔排出到水槽的外部，从而能够有效地使水槽内的相对湿度 由于空气流通而降低。

公开(公告)号：US07325332B2

公开(公告)日：2008-02-05

申请号：US11209671

申请日：2005-08-24

申请人： Young Suk Chung ,  Jung Ho Lee

发明人： Young Suk Chung ,  Jung Ho Lee

IPC分类号： F26B11/02

CPC分类号： D06F58/22

摘要： A clothing dryer capable of removing impurities, such as dust, accumulated in a hot air outlet duct thereof. The clothing dryer includes a drying tub to dry laundry contained therein using hot air supplied thereto, a hot air outlet duct to discharge the hot air, coming from the drying tub, to the outside, and a connecting unit to connect an external suction device to the hot air outlet duct. Accordingly, impurities, such as dust, accumulated in the hot air outlet duct can be removed by a suction force of the suction device, thereby enabling the cleaning of the hot air outlet duct.

摘要翻译： 能够除去积存在其热风出口管内的灰尘等杂质的衣物烘干机。 衣物烘干机包括：干燥桶，用于供应热风的干燥衣物，将来自干燥桶的热空气排出到外部的热空气出口管道;以及连接单元，将外部抽吸装置连接到 热风出口管道。 因此，积存在热风出口管道中的灰尘等杂质可以通过抽吸装置的吸力除去，从而能够清洁热风出口管道。

公开(公告)号：US07271066B2

公开(公告)日：2007-09-18

申请号：US11086286

申请日：2005-03-23

申请人： Kwan Yong Lim ,  Heung Jae Cho ,  Jung Ho Lee

发明人： Kwan Yong Lim ,  Heung Jae Cho ,  Jung Ho Lee

IPC分类号： H01L21/336

CPC分类号： H01L29/66651 ,  H01L21/28123

摘要： Disclosed are a semiconductor devices and method of fabricating the same. Anti-etch films are formed in the top corners of the device isolation film using a material that has a different etch selectivity ratio from nitride or oxide and is not etched in an oxide gate pre-cleaning process. It is thus possible to prevent formation of a moat at the top corners of the device isolation film and the gate oxide film from being thinly formed, thereby improving reliability and electrical characteristics of the device.

摘要翻译： 公开了半导体器件及其制造方法。 使用具有与氮化物或氧化物不同的蚀刻选择比的材料并且在氧化物栅极预清洁工艺中不被蚀刻的材料在器件隔离膜的顶角形成防蚀刻膜。 因此，可以防止在器件隔离膜和栅极氧化膜的顶角形成护城河，从而提高器件的可靠性和电气特性。

公开(公告)号：US06707062B2

公开(公告)日：2004-03-16

申请号：US10044965

申请日：2002-01-15

申请人： Jung Ho Lee

发明人： Jung Ho Lee

IPC分类号： H01L2906

CPC分类号： H01L29/66651 ,  H01L29/1054 ,  H01L29/665 ,  H01L29/66545 ,  H01L29/66636

摘要： The present invention relates to a transistor in a semiconductor device and method of manufacturing the same, more particularly to a new dual gate P+ salicide forming technology having an elevated channel and a source/drain using the selective SiGe epi-silicon growth technology. It relates to manufacturing of a high performance surface channel PMOS salicide that has a number of beneficial effects.

摘要翻译： 本发明涉及一种半导体器件中的晶体管及其制造方法，更具体地涉及一种具有升高沟道和使用选择性SiGe表硅生长技术的源极/漏极的新型双栅P ++自对准硅化物形成技术 。 它涉及具有许多有益效果的高性能表面通道PMOS硅化物的制造。

公开(公告)号：US06627488B2

公开(公告)日：2003-09-30

申请号：US09891210

申请日：2001-06-26

申请人： Jung Ho Lee

发明人： Jung Ho Lee

IPC分类号： H01L21338

CPC分类号： H01L29/66477 ,  H01L21/31053 ,  H01L29/105 ,  H01L29/1054 ,  H01L29/66537 ,  H01L29/66545 ,  H01L29/66621

摘要： Disclosed herein is a method of fabricating a semiconductor device using a damascene process. The method comprises the steps of: forming a dummy gate electrode on a semiconductor substrate; forming a source/drain region in the substrate; polishing and planarizing an interlayer insulating film formed on the substrate to expose the dummy gate electrode; etching the dummy gate electrode to form a groove in an exposed portion of the substrate; implanting impurity ions into the exposed portion of the substrate to form a delta-doping layer; thermally treating the semiconductor substrate to activate the implanted impurity ions; growing a silicon film on the exposed portion of the substrate by a selective epitaxial process; depositing a gate insulating film on the surface of the groove; and depositing a gate metal film on the gate insulating film in the groove, forming the gate electrode.

公开(公告)号：US06376318B1

公开(公告)日：2002-04-23

申请号：US09609531

申请日：2000-06-30

申请人： Jung Ho Lee ,  Seung Chul Lee

发明人： Jung Ho Lee ,  Seung Chul Lee

IPC分类号： H01C21336

CPC分类号： H01L29/66651 ,  H01L29/105 ,  H01L29/66628

摘要： There is disclosed a method of manufacturing a semiconductor device ion by which an epitaxial growth film into which boron is doped in-situ is formed before a gate oxide film is formed after formation a well region for forming a MOS device and using it as a channel threshold voltage control layer, thus forming a counter-doped boron layer having an uniform and still higher concentration than the threshold voltage control layer formed by the conventional ion implantation process at the surface of the silicon substrate. As a result, it can make a device having a more sharp profile of the threshold voltage profile at the channel and having an improved short channel characteristic by the combination of the channel and junction engineering.

摘要翻译： 公开了在形成用于形成MOS器件的阱区域并将其用作沟道之后，在形成栅极氧化膜之前形成其中原位掺杂硼的外延生长膜的半导体器件离子的方法 从而形成具有比通过硅衬底的表面处的常规离子注入工艺形成的阈值电压控制层更均匀且更高浓度的反掺杂硼层。 结果，它可以使得在通道处具有更加清晰的阈值电压分布的器件，并且通过通道和结工程的组合具有改进的短通道特性。

公开(公告)号：US06261911B1

公开(公告)日：2001-07-17

申请号：US09502782

申请日：2000-02-11

申请人： Jung Ho Lee ,  Seung Chul Lee ,  Noh Yeal Kwak ,  In Seok Yeo ,  Sahng Kyoo Lee

发明人： Jung Ho Lee ,  Seung Chul Lee ,  Noh Yeal Kwak ,  In Seok Yeo ,  Sahng Kyoo Lee

IPC分类号： H01L21336

CPC分类号： H01L29/66628

摘要： The present invention relates to a method of manufacturing a junction in a semiconductor device. When forming an elevated source/drain junction (ESD) of a buried channel field effect transistor (BC-FET) using a selective epitaxial growth (SEG) technique, a self-aligned epitaxial silicon (SESS) is formed on the lower portion of a gate side-wall spacer, resulting in the improvement of a short channel characteristic by suppressing a facet occurred when forming an elevated source/drain junction (EDS) of the buried channel field effect transistors (BC-FETs) using a selective epitaxial growth (SEG) technique as well as the increase of the current density by lowering the series resistance of source/drain extension.

摘要翻译： 本发明涉及在半导体器件中制造结的方法。 当使用选择性外延生长（SEG）技术形成掩埋沟道场效应晶体管（BC-FET）的升高的源极/漏极结（ESD）时，自对准外延硅（SESS）形成在 通过使用选择性外延生长（SEG）形成掩埋沟道场效应晶体管（BC-FET）形成升高的源极/漏极结（EDS）时发生的小面，导致短沟道特性的改善， ）技术，以及通过降低源极/漏极延伸的串联电阻来增加电流密度。