公开(公告)号：US06376318B1

公开(公告)日：2002-04-23

申请号：US09609531

申请日：2000-06-30

申请人： Jung Ho Lee ,  Seung Chul Lee

发明人： Jung Ho Lee ,  Seung Chul Lee

IPC分类号： H01C21336

CPC分类号： H01L29/66651 ,  H01L29/105 ,  H01L29/66628

摘要： There is disclosed a method of manufacturing a semiconductor device ion by which an epitaxial growth film into which boron is doped in-situ is formed before a gate oxide film is formed after formation a well region for forming a MOS device and using it as a channel threshold voltage control layer, thus forming a counter-doped boron layer having an uniform and still higher concentration than the threshold voltage control layer formed by the conventional ion implantation process at the surface of the silicon substrate. As a result, it can make a device having a more sharp profile of the threshold voltage profile at the channel and having an improved short channel characteristic by the combination of the channel and junction engineering.

摘要翻译： 公开了在形成用于形成MOS器件的阱区域并将其用作沟道之后，在形成栅极氧化膜之前形成其中原位掺杂硼的外延生长膜的半导体器件离子的方法 从而形成具有比通过硅衬底的表面处的常规离子注入工艺形成的阈值电压控制层更均匀且更高浓度的反掺杂硼层。 结果，它可以使得在通道处具有更加清晰的阈值电压分布的器件，并且通过通道和结工程的组合具有改进的短通道特性。

公开(公告)号：US06261911B1

公开(公告)日：2001-07-17

申请号：US09502782

申请日：2000-02-11

申请人： Jung Ho Lee ,  Seung Chul Lee ,  Noh Yeal Kwak ,  In Seok Yeo ,  Sahng Kyoo Lee

发明人： Jung Ho Lee ,  Seung Chul Lee ,  Noh Yeal Kwak ,  In Seok Yeo ,  Sahng Kyoo Lee

IPC分类号： H01L21336

CPC分类号： H01L29/66628

摘要： The present invention relates to a method of manufacturing a junction in a semiconductor device. When forming an elevated source/drain junction (ESD) of a buried channel field effect transistor (BC-FET) using a selective epitaxial growth (SEG) technique, a self-aligned epitaxial silicon (SESS) is formed on the lower portion of a gate side-wall spacer, resulting in the improvement of a short channel characteristic by suppressing a facet occurred when forming an elevated source/drain junction (EDS) of the buried channel field effect transistors (BC-FETs) using a selective epitaxial growth (SEG) technique as well as the increase of the current density by lowering the series resistance of source/drain extension.

摘要翻译： 本发明涉及在半导体器件中制造结的方法。 当使用选择性外延生长（SEG）技术形成掩埋沟道场效应晶体管（BC-FET）的升高的源极/漏极结（ESD）时，自对准外延硅（SESS）形成在 通过使用选择性外延生长（SEG）形成掩埋沟道场效应晶体管（BC-FET）形成升高的源极/漏极结（EDS）时发生的小面，导致短沟道特性的改善， ）技术，以及通过降低源极/漏极延伸的串联电阻来增加电流密度。

公开(公告)号：US10206491B2

公开(公告)日：2019-02-19

申请号：US15545052

申请日：2016-01-12

申请人： Seung Chul Lee

发明人： Seung Chul Lee

IPC分类号： A45F5/00 ,  H04R1/10 ,  A44C7/00 ,  H04M1/60 ,  H04R1/02

摘要： An ear instrument, including: a first body; a second body having one end rotatably coupled to the first body; and a first fixing member having a side coupled to the other end of the second body. The first fixing member is coupled to the rear part of the user's ear when the ear instrument is fitted to the user's ear. The first fixing member is formed in a C-shape.

公开(公告)号：US08785038B2

公开(公告)日：2014-07-22

申请号：US13813018

申请日：2010-11-19

申请人： Jae Woong Kim ,  Seung Chul Lee ,  Ki Duck Park ,  Chul Gyu Bae ,  Jong Goo Kang ,  Yoon Seong Cho

发明人： Jae Woong Kim ,  Seung Chul Lee ,  Ki Duck Park ,  Chul Gyu Bae ,  Jong Goo Kang ,  Yoon Seong Cho

IPC分类号： H01M4/134 ,  H01M4/58 ,  H01M4/38 ,  H01M4/525 ,  H01M10/0525 ,  H01M4/36

CPC分类号： H01M4/386 ,  H01M4/134 ,  H01M4/364 ,  H01M4/38 ,  H01M4/525 ,  H01M4/581 ,  H01M10/0525 ,  H01M2004/021 ,  Y02E60/122

摘要： A negative electrode active material and a secondary battery are provided. The negative electrode active material can be useful in maintaining excellent cell efficiency and lifespan while showing high-capacity properties, and the secondary battery may be manufactured using the negative electrode active material.

摘要翻译： 提供负极活性物质和二次电池。 负极活性物质可以在保持优异的电池效率和使用寿命的同时显示高容量特性，并且可以使用负极活性物质制造二次电池。

公开(公告)号：US20090170847A1

公开(公告)日：2009-07-02

申请号：US12161916

申请日：2007-01-23

申请人： Seung Chul Lee ,  Jin Seok Choi ,  Jung Hoon Oh ,  Boonsaeng Park ,  Yong Eun Kim ,  Jun Hee Lee ,  Dongkyu Shin ,  Cheol Min Kim ,  Young-Lan Hyun ,  Cheol Soon Lee ,  Joong-Myung Cho ,  Seonggu Ro

发明人： Seung Chul Lee ,  Jin Seok Choi ,  Jung Hoon Oh ,  Boonsaeng Park ,  Yong Eun Kim ,  Jun Hee Lee ,  Dongkyu Shin ,  Cheol Min Kim ,  Young-Lan Hyun ,  Cheol Soon Lee ,  Joong-Myung Cho ,  Seonggu Ro

IPC分类号： A61K31/5377 ,  A61K31/53 ,  A61K31/506 ,  A61K31/496 ,  A61K31/4745 ,  C07D471/02

CPC分类号： C07D471/04

摘要： The inventive imidazopyridine derivative can be used in a pharmaceutical composition for preventing or treating diseases such as diabetes, obesity, dementia, cancer, and inflammation, since it can efficiently inhibit the activities of several protein kinases including glycogen synthase kinase-3 (GSK-3), aurora kinase, extracellular signal-regulated kinase (ERK), protein kinase B (AKT), and the likes, to control signal transductions thereof.

摘要翻译： 本发明的咪唑并吡啶衍生物可用于预防或治疗诸如糖尿病，肥胖症，痴呆，癌症和炎症等疾病的药物组合物中，因为它可有效抑制几种蛋白激酶（包括糖原合成酶激酶-3（GSK-3 ），极光激酶，细胞外信号调节激酶（ERK），蛋白激酶B（AKT）等，以控制其信号转导。

公开(公告)号：US20070142519A1

公开(公告)日：2007-06-21

申请号：US11638541

申请日：2006-12-14

申请人： Sung Wook Han ,  Seung Chul Lee

发明人： Sung Wook Han ,  Seung Chul Lee

IPC分类号： C08K5/00

CPC分类号： C08F2/20 ,  C08F2/16

摘要： Disclose is a water soluble anionic polymer dispersion containing a radical copolymer created in water salt which includes anionic monomer, non-ionic monomer, ionic dispersant and radical polymerization initator, and anionic surfactant or non-ionic surfactant. Also disclosed is a water soluble anionic polymer dispersion is characterized by containment of radical copolymer created in salt water which includes anionic monomer, non-ionic monomer, ionic dispersant, and radical polymerization initiator, and anionic surfactant, and non-ionic surfactant. Manufacturing methods for the water soluble anionic polymer dispersions are further disclosed herein.

摘要翻译： Disclose是一种水溶性阴离子聚合物分散体，其含有在水盐中产生的自由基共聚物，其包括阴离子单体，非离子单体，离子分散剂和自由基聚合引发剂，以及阴离子表面活性剂或非离子表面活性剂。 还公开了一种水溶性阴离子聚合物分散体，其特征在于包含在盐水中产生的自由基共聚物，其包括阴离子单体，非离子单体，离子分散剂和自由基聚合引发剂，以及阴离子表面活性剂和非离子表面活性剂。 水溶性阴离子聚合物分散体的制造方法在本文中进一步公开。

公开(公告)号：US07154076B2

公开(公告)日：2006-12-26

申请号：US11177527

申请日：2005-07-07

申请人： Heung Sik Kim ,  Yong Ahn Ha ,  Ui Chol Yl ,  Jin Heon Kim ,  Woo Hyun Kwon ,  Jong Sun Won ,  Hak Dae Lee ,  Seung Hyun Cha ,  Seung Chul Lee ,  Tae Sun Shin

发明人： Heung Sik Kim ,  Yong Ahn Ha ,  Ui Chol Yl ,  Jin Heon Kim ,  Woo Hyun Kwon ,  Jong Sun Won ,  Hak Dae Lee ,  Seung Hyun Cha ,  Seung Chul Lee ,  Tae Sun Shin

IPC分类号： H01L27/00

CPC分类号： H01L31/02164 ,  H01L27/14623 ,  H01L27/14806 ,  H01L31/0352

摘要： An image sensor with a high dynamic range is provided. The image sensor includes a semiconductor substrate, a plurality of light-receiving elements formed on the semiconductor substrate, and light-shield films formed on upper ends of some of the light-receiving elements to partially block light incident upon each of the some light-receiving elements. Hence, an image sensing device including the image sensor can detect an accurate image regardless of whether the environment is bright or dark.

摘要翻译： 提供了具有高动态范围的图像传感器。 图像传感器包括半导体衬底，形成在半导体衬底上的多个光接收元件，以及形成在一些光接收元件的上端的光屏蔽膜，以部分地阻挡入射到每个光接收元件上的光， 接收元件。 因此，包括图像传感器的图像感测装置可以检测精确的图像，而不管环境是亮还是暗。

公开(公告)号：US06950051B2

公开(公告)日：2005-09-27

申请号：US10872530

申请日：2004-06-22

申请人： Seung Chul Lee ,  Min Hyung Cho ,  Mun Yang Park

发明人： Seung Chul Lee ,  Min Hyung Cho ,  Mun Yang Park

IPC分类号： H03M1/16 ,  H03M1/36 ,  H03M1/38

CPC分类号： H03M1/141

摘要： Provided is a pipelined folding analog-digital converter, the pipelined folding analog-digital converter comprising: a first sample-and-hold unit that samples and outputs a number of analog input voltages; a reference voltage generator that generates a number of reference voltages; a pre-amplifier that amplifies and outputs a number of values subtracting each reference voltage from the outputs of the first sample-and-hold unit, wherein an offset effect due to asymmetry of the amplifier is eliminated; a first folder that folds and outputs a number of outputs of the pre-amplifier; a second sample-and-hold unit that samples and outputs a number of outputs of the first folder; a second folder that folds and outputs a number of outputs of the second sample-and-hold unit; and a comparator that performs a comparison operation between the outputs of the pre-amplifier and the output values of the second folder to find a digital output value, whereby the offset caused by the device mismatch is removed, so that it is possible to realize a high-resolution analog-digital converter.

摘要翻译： 提供了一种流水线折叠模拟数字转换器，该流水线折叠模数转换器包括：第一采样保持单元，其对多个模拟输入电压进行采样和输出; 产生多个参考电压的参考电压发生器; 前置放大器，其放大并输出从所述第一采样保持单元的输出中减去每个参考电压的多个值，其中消除了由于放大器的不对称引起的偏移影响; 折叠并输出前置放大器的多个输出的第一文件夹; 第二采样保持单元，其对所述第一文件夹的多个输出进行采样和输出; 折叠并输出第二采样保持单元的多个输出的第二文件夹; 以及比较器，其执行前置放大器的输出和第二文件夹的输出值之间的比较操作以找到数字输出值，由此消除由于器件失配引起的偏移，从而可以实现 高分辨率模拟数字转换器。

公开(公告)号：US06762819B2

公开(公告)日：2004-07-13

申请号：US09748870

申请日：2000-12-28

申请人： Seung Chul Lee

发明人： Seung Chul Lee

IPC分类号： G02F11337

CPC分类号： G02F1/134363 ,  G02F1/133377

摘要： A liquid crystal display (LCD) device has electrodes on barrier ribs that are adaptive for widening a viewing angle and improving an aperture ratio of the LCD device. In the device, barrier ribs are formed from an insulating material at the boundary portion of the pixel cells. First and second electrodes are provided at opposite surfaces of the barrier ribs to apply an electric field to the liquid crystal. Accordingly, the viewing angle can be widened and the electrode area can be minimized, thereby improving the aperture ratio and the light transmissivity.

摘要翻译： 液晶显示器（LCD）装置在阻挡肋上具有适于扩大视角并提高LCD装置的开口率的电极。 在该器件中，阻挡肋由像素单元的边界部分处的绝缘材料形成。 第一和第二电极设置在阻挡肋的相对表面处以向液晶施加电场。 因此，能够扩大视野角度，能够使电极面积最小化，从而提高开口率和透光率。

公开(公告)号：US09087723B2

公开(公告)日：2015-07-21

申请号：US13754063

申请日：2013-01-30

申请人： Choong-Ho Lee ,  Donggu Yi ,  Seung Chul Lee ,  Hyungsuk Lee ,  Seonah Nam ,  Changwoo Oh ,  Jongwook Lee ,  Song-Yi Han

发明人： Choong-Ho Lee ,  Donggu Yi ,  Seung Chul Lee ,  Hyungsuk Lee ,  Seonah Nam ,  Changwoo Oh ,  Jongwook Lee ,  Song-Yi Han

IPC分类号： H01L21/70 ,  H01L27/092 ,  H01L29/66 ,  H01L29/51 ,  H01L29/78

CPC分类号： H01L29/6681 ,  H01L21/02255 ,  H01L21/32053 ,  H01L21/76224 ,  H01L27/092 ,  H01L29/517 ,  H01L29/66545 ,  H01L29/66795 ,  H01L29/7848 ,  H01L29/785

摘要： Provided are field effect transistors and methods of fabricating the same. The transistor may include a substrate with an active pattern, the active pattern having a top surface and two sidewalls, a gate electrode proximal to the top surface and the sidewalls of the active pattern and crossing the active pattern, a gate spacer covering a sidewall of the gate electrode, a gate dielectric pattern at a bottom surface of the gate electrode, a source electrode on the active pattern at one side of the gate electrode, a drain electrode on the active pattern at another side of the gate electrode, and silicide patterns on surfaces of the source and drain electrodes, respectively. The gate dielectric pattern includes at least one high-k layer and the gate spacer has a dielectric constant that is smaller than that of the gate dielectric pattern.

摘要翻译： 提供场效应晶体管及其制造方法。 晶体管可以包括具有有源图案的衬底，有源图案具有顶表面和两个侧壁，靠近顶表面的栅极电极和有源图案的侧壁并与有源图案交叉，栅极间隔件覆盖侧壁 栅极电极，栅电极的底面的栅极电介质图案，位于栅电极一侧的有源图案上的源电极，栅电极另一侧的有源图案上的漏电极，以及硅化物图案 分别在源电极和漏电极的表面上。 栅极电介质图案包括至少一个高k层，并且栅极间隔物的介电常数小于栅极电介质图案的介电常数。