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公开(公告)号：US20200240849A1
公开(公告)日：2020-07-30
申请号：US16852659
申请日：2020-04-20
Applicant: TEXAS INSTRUMENTS INCORPORATED
Inventor： Keith Ryan Green , Byron Jon Roderick Shulver
Abstract: A device having a first terminal region and a second terminal region. The first terminal region includes fine-tune (FT) metal stripes that are separated from each other by a first distance along the longitudinal direction. The second terminal region is spaced apart from the first terminal region by at least an inter-terminal distance. The second terminal region includes coarse-tune (CT) metal stripes that are separated from each other by a second distance along the longitudinal direction. The second distance is greater than the first distance, and the inter-terminal distance greater than the second distance. Each of the FT metal stripes may be selected as a first access location, and each of the CT metal stripes may be selected as a second access location. A pair of selected first and second access locations access a sheet resistance defined by a distance therebetween.
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公开(公告)号：US10680164B2
公开(公告)日：2020-06-09
申请号：US15907000
申请日：2018-02-27
Applicant: TEXAS INSTRUMENTS INCORPORATED
Inventor： Keith Ryan Green , Dok Won Lee
Abstract: A Hall effect sensor comprises a semiconductor substrate, a first well formed in the semiconductor substrate, a first ohmic contact formed in the first well, a second ohmic contact formed in the first well, a first terminal electrically coupled to the first ohmic contact, a second terminal electrically coupled to the second ohmic contact, and a first metal layer formed over the semiconductor substrate. The first metal layer comprises a first interconnect and a first trace, where the first trace is formed over the first well, and where the first interconnect electrically couples a first part of the first well to a second part of the first well. The first and second ohmic contacts are each positioned between the first part and the second part of the first well, where the first interconnect is electrically isolated from the first trace.
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公开(公告)号：US10109787B2
公开(公告)日：2018-10-23
申请号：US15335726
申请日：2016-10-27
Applicant: Texas Instruments Incorporated
Inventor： Keith Ryan Green , Iouri Mirgorodski
Abstract: A vertical Hall element and method of fabricating are disclosed. The method includes forming a buried region having a first conductivity type in a substrate having a second conductivity type and implanting a dopant of the first conductivity type into a well region between the top surface of the substrate and the buried region. The buried region has a doping concentration increasing with an increasing depth from a top surface of the substrate and the well region has a doping concentration decreasing from the top surface of the substrate to the buried region. The method includes forming first through fifth contacts on the well region. First and second contacts define a conductive path and second and third contacts define another conductive path through the well region. The fourth contact is formed between first and second contacts and the fifth contact is formed between second and third contacts.
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公开(公告)号：US20170271399A1
公开(公告)日：2017-09-21
申请号：US15070413
申请日：2016-03-15
Applicant: Texas Instruments Incorporated
Inventor： Dok Won Lee , William David French , Keith Ryan Green
CPC classification number: H01L27/22 , H01L43/04 , H01L43/065 , H01L43/14
Abstract: Disclosed examples provide wafer-level integration of magnetoresistive sensors and Hall-effect sensors in a single integrated circuit, in which one or more vertical and/or horizontal Hall sensors are formed on or in a substrate along with transistors and other circuitry, and a magnetoresistive sensor circuit is formed in the IC metallization structure.
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公开(公告)号：US09728581B2
公开(公告)日：2017-08-08
申请号：US14932949
申请日：2015-11-04
Applicant: Texas Instruments Incorporated
Inventor： Keith Ryan Green , Rajni J. Aggarwal , Ajit Sharma
CPC classification number: H01L27/22 , H01L43/04 , H01L43/065 , H01L43/14
Abstract: A CMOS integrated circuit includes a Hall sensor having a Hall plate formed in a first isolation layer which is formed concurrently with a second isolation layer under a MOS transistor. A first shallow well with a conductivity type opposite from the first isolation layer is formed over, and extending to, the Hall plate. The first shallow well is formed concurrently with a second shallow well under the MOS transistor. The Hall sensor may be a horizontal Hall sensor for sensing magnetic fields oriented perpendicular to the top surface of the substrate of the integrated circuit, or may be a vertical Hall sensor for sensing magnetic fields oriented parallel to the top surface of the substrate of the integrated circuit.
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Patent Agency Ranking
26.发明申请SYSTEMS AND METHODS FOR OPERATING A HALL-EFFECT SENSOR WITHOUT AN APPLIED MAGNETIC FIELD 有权在没有应用磁场的情况下操作霍尔效应传感器的系统和方法公开(公告)号：US20150276892A1
公开(公告)日：2015-10-01
申请号：US14670078
申请日：2015-03-26
Applicant: TEXAS INSTRUMENTS INCORPORATED
Inventor： MICHAEL EDWIN BUTENHOFF , Keith Ryan Green , Anuj Jain
CPC classification number: G01R33/0023 , G01R33/072
Abstract: A method for verifying an operation of a Hall-effect sensor without an applied magnetic field. The method can include providing a bias signal to a first pair of terminals of a Hall-effect element, applying a Hall current signal to a second pair of terminals of the Hall-effect element, measuring a Hall output voltage across the second pair of terminals and comparing the measured Hall output voltage to an expected Hall output voltage that would be provided by a corresponding applied magnetic field.
Abstract translation: 一种在没有施加磁场的情况下验证霍尔效应传感器的操作的方法。 该方法可以包括向霍尔效应元件的第一对端子提供偏置信号，将霍尔电流信号施加到霍尔效应元件的第二对端子，测量第二对端子上的霍尔输出电压 并将所测量的霍尔输出电压与由相应的施加磁场提供的预期霍尔输出电压进行比较。
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公开(公告)号：US11588101B2
公开(公告)日：2023-02-21
申请号：US16370944
申请日：2019-03-30
Applicant: Texas Instruments Incorporated
Inventor： Keith Ryan Green
Abstract: A Hall sensor includes a Hall well, such as an implanted region in a surface layer of a semiconductor structure, and four doped regions spaced apart from one another in the implanted region. The implanted region and the doped regions include majority carriers of the same conductivity type. The sensor also includes a dielectric layer that extends over the implanted region, and an electrode layer over the dielectric layer to operate as a control gate to set or adjust the sensor performance. A first supply circuit provides a first bias signal to a first pair of the terminals, and a second supply circuit provides a second bias signal to the electrode layer.
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公开(公告)号：US20230048022A1
公开(公告)日：2023-02-16
申请号：US17402019
申请日：2021-08-13
Applicant: Texas Instruments Incorporated
Inventor： Charles Parkhurst , Gabriel Eugenio De La Cruz Hernandez , Keith Ryan Green , Dimitar Trifonov , Chao-Hsuian Tsay
Abstract: A Hall effect sensor including a Hall element disposed at a surface of a semiconductor body, including a first doped region of a first conductivity type disposed over and abutted by an isolated second doped region of a second conductivity type. First through fourth terminals of the Hall element are in electrical contact with the first doped region, and a fifth terminal in electrical contact with the second doped region. A Hall effect sensor includes a first current source coupled to the first terminal of the Hall element, and common mode feedback regulation circuitry. The common mode feedback regulation circuitry has an output coupled to the third terminal and a ground node, and having an input coupled to the second and fourth terminals of the Hall element, and an output coupled to the third terminal and a ground node, where the second doped region is coupled to the third terminal.
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公开(公告)号：US11333719B2
公开(公告)日：2022-05-17
申请号：US17015347
申请日：2020-09-09
Applicant: TEXAS INSTRUMENTS INCORPORATED
Inventor： Keith Ryan Green , Dimitar Trifonov , Tony Ray Larson
Abstract: A semiconductor device includes first and second Hall-effect sensors. Each sensor has first and third opposite terminals and second and fourth opposite terminals. A control circuit is configured to direct a current through the first and second sensors and to measure a corresponding Hall voltage of the first and second sensors. Directing includes applying a first source voltage in a first direction between the first and third terminals of the first sensor and applying a second source voltage in a second direction between the first and third terminals of the second sensor. A third source voltage is applied in a third direction between the second and fourth terminals of the first sensor, and a fourth source voltage is applied in a fourth direction between the second and fourth terminals of the second sensor. The third direction is rotated clockwise from the first direction and the fourth direction rotated counter-clockwise from the second direction.
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公开(公告)号：US11237223B2
公开(公告)日：2022-02-01
申请号：US16521053
申请日：2019-07-24
Applicant: TEXAS INSTRUMENTS INCORPORATED
Inventor： Jo Bito , Benjamin Stassen Cook , Dok Won Lee , Keith Ryan Green , Ricky Alan Jackson , William David French
Abstract: A structure includes a substrate which includes a surface. The structure also includes a horizontal-type Hall sensor positioned within the substrate and below the surface of the substrate. The structure further includes a patterned magnetic concentrator positioned above the surface of the substrate, and a protective overcoat layer positioned above the magnetic concentrator.
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