公开(公告)号：US20240128137A1

公开(公告)日：2024-04-18

申请号：US18530193

申请日：2023-12-05

Applicant: TEXAS INSTRUMENTS INCORPORATED

Inventor： Sebastian Meier ,  Bernhard Peter Lange

IPC: H01L23/10 ,  G01N27/28 ,  G01N27/416 ,  H01L21/56 ,  H01L23/00 ,  H01L23/053 ,  H01L23/16

CPC classification number: H01L23/10 ,  G01N27/28 ,  G01N27/4167 ,  H01L21/56 ,  H01L23/053 ,  H01L23/16 ,  H01L24/48 ,  H01L2224/48225

Abstract: In some examples, a device comprises a substrate including a notch formed in a surface of the substrate and a semiconductor die positioned in the notch and including an electrochemical sensor on an active surface of the semiconductor die. The device also comprises a chemically inert member abutting the surface of the substrate and including an orifice in vertical alignment with the electrochemical sensor as a result of the semiconductor die being positioned in the notch. The device also comprises a compressed o-ring seal positioned between the chemically inert member and the active surface of the semiconductor die, the compressed o-ring seal circumscribing the electrochemical sensor.

公开(公告)号：US11837513B2

公开(公告)日：2023-12-05

申请号：US16932128

申请日：2020-07-17

Applicant: TEXAS INSTRUMENTS INCORPORATED

Inventor： Sebastian Meier ,  Bernhard Peter Lange

IPC: H01L23/10 ,  H01L23/053 ,  H01L23/16 ,  H01L21/56 ,  G01N27/28 ,  G01N27/416 ,  H01L23/00

CPC classification number: H01L23/10 ,  G01N27/28 ,  G01N27/4167 ,  H01L21/56 ,  H01L23/053 ,  H01L23/16 ,  H01L24/48 ,  H01L2224/48225

Abstract: In some examples, a device comprises a substrate including a notch formed in a surface of the substrate and a semiconductor die positioned in the notch and including an electrochemical sensor on an active surface of the semiconductor die. The device also comprises a chemically inert member abutting the surface of the substrate and including an orifice in vertical alignment with the electrochemical sensor as a result of the semiconductor die being positioned in the notch. The device also comprises a compressed o-ring seal positioned between the chemically inert member and the active surface of the semiconductor die, the compressed o-ring seal circumscribing the electrochemical sensor.

公开(公告)号：US20230253211A1

公开(公告)日：2023-08-10

申请号：US18299850

申请日：2023-04-13

Applicant: Texas Instruments Incorporated

Inventor： Sebastian Meier ,  Helmut Rinck

IPC: H01L21/306 ,  H01L21/308 ,  C23F1/44 ,  C23F1/30 ,  H01L21/24

CPC classification number: H01L21/30604 ,  H01L21/3081 ,  C23F1/44 ,  C23F1/30 ,  H01L21/244

Abstract: There is provided a method of patterning platinum on a substrate. A platinum layer is deposited on the substrate, and a patterned photoresist layer is formed over the platinum layer leaving partly exposed regions of the platinum layer. An aluminum layer is deposited over the partly exposed regions of the platinum layer. An alloy is formed of aluminum with platinum from the partly exposed regions. The platinum aluminum alloy is etched away leaving a remaining portion of the platinum layer to form a patterned platinum layer on the substrate. In an embodiment, a thin hard mask layer is deposited on the platinum layer on the semiconductor substrate before the patterned photoresist layer is formed.

公开(公告)号：US11567026B2

公开(公告)日：2023-01-31

申请号：US17105142

申请日：2020-11-25

Applicant: Texas Instruments Incorporated

Inventor： Scott Robert Summerfelt ,  Ernst Georg Muellner ,  Sebastian Meier ,  Markus Hefele

IPC: G01N27/22 ,  G01N27/416

Abstract: For sensing pH of a fluid, a heating apparatus of a semiconductor die controls a temperature of the fluid to a first temperature. A first voltage of a gate of a floating gate transistor of the semiconductor die is measured while the temperature of the fluid is at the first temperature. Also, the heating apparatus controls the temperature of the fluid to a second temperature that is different than the first temperature. A second voltage of the gate is measured while the temperature of the fluid is at the second temperature. The pH of the fluid is determined based on the first and second voltages, the first temperature and the second temperature.

公开(公告)号：US11195725B2

公开(公告)日：2021-12-07

申请号：US16897357

申请日：2020-06-10

Applicant: Texas Instruments Incorporated

Inventor： Sebastian Meier ,  Michael Hans Enzelberger-Heim ,  Reiner Port

IPC: H01L21/311 ,  H01L21/02 ,  H01L21/3205 ,  H01L23/00 ,  G01N27/414

Abstract: A microelectronic device includes a metal layer on a first dielectric layer. An etch stop layer is disposed over the metal layer and on the dielectric layer directly adjacent to the metal layer. The etch stop layer includes a metal oxide, and is less than 10 nanometers thick. A second dielectric layer is disposed over the etch stop layer. The second dielectric layer is removed from an etched region which extends down to the etch stop layer. The etched region extends at least partially over the metal layer. In one version of the microelectronic device, the etch stop layer may extend over the metal layer in the etched region. In another version, the etch stop layer may be removed in the etched region. The microelectronic device is formed by etching the second dielectric layer using a plasma etch process, stopping on the etch stop layer.

公开(公告)号：US20210372960A1

公开(公告)日：2021-12-02

申请号：US17105142

申请日：2020-11-25

Applicant: Texas Instruments Incorporated

Inventor： Scott Robert Summerfelt ,  Ernst Georg Muellner ,  Sebastian Meier ,  Markus Hefele

IPC: G01N27/22 ,  G01N27/416

Abstract: For sensing pH of a fluid, a heating apparatus of a semiconductor die controls a temperature of the fluid to a first temperature. A first voltage of a gate of a floating gate transistor of the semiconductor die is measured while the temperature of the fluid is at the first temperature. Also, the heating apparatus controls the temperature of the fluid to a second temperature that is different than the first temperature. A second voltage of the gate is measured while the temperature of the fluid is at the second temperature. The pH of the fluid is determined based on the first and second voltages, the first temperature and the second temperature.

公开(公告)号：US10707089B2

公开(公告)日：2020-07-07

申请号：US15936434

申请日：2018-03-27

Applicant: Texas Instruments Incorporated

Inventor： Sebastian Meier ,  Michael Hans Enzelberger-Heim ,  Reiner Port

IPC: H01L21/00 ,  H01L21/311 ,  H01L21/02 ,  H01L21/3205 ,  H01L23/00 ,  G01N27/414

Abstract: A microelectronic device includes a metal layer on a first dielectric layer. An etch stop layer is disposed over the metal layer and on the dielectric layer directly adjacent to the metal layer. The etch stop layer includes a metal oxide, and is less than 10 nanometers thick. A second dielectric layer is disposed over the etch stop layer. The second dielectric layer is removed from an etched region which extends down to the etch stop layer. The etched region extends at least partially over the metal layer. In one version of the microelectronic device, the etch stop layer may extend over the metal layer in the etched region. In another version, the etch stop layer may be removed in the etched region. The microelectronic device is formed by etching the second dielectric layer using a plasma etch process, stopping on the etch stop layer.