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公开(公告)号：US10707070B2
公开(公告)日：2020-07-07
申请号：US16142537
申请日：2018-09-26
Applicant: Tokyo Electron Limited
Inventor： Hoyoung Kang
IPC: H01L21/02 , H01L21/306 , H01L21/027
Abstract: Methods and systems for coating a substrate with a fluid are described. In an embodiment, a method may include receiving a substrate in a substrate processing unit, the substrate having one or more physical features formed on a surface of the substrate. The method may include introducing a gas into an environment of the surface of the substrate. Additionally, the method may include applying a fluid to the surface of the substrate, wherein the gas facilitates distribution of the fluid relative to the one or more physical features formed on the surface of the substrate. The method may further include controlling one or more processing parameters related to distribution of the fluid in order to achieve device formation objectives.
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22.发明申请公开(公告)号：US20200073244A1
公开(公告)日：2020-03-05
申请号：US16560776
申请日：2019-09-04
Applicant: Tokyo Electron Limited
Inventor： Hoyoung Kang , Anton J. Devilliers , Corey Lemley
Abstract: Methods for processing a substrate are provided. The method includes receiving a substrate. The substrate has a front side surface, a backside surface, and a side edge surface. The method also includes forming a first material in a first annular region of the front side surface, resulting in the first annular being coated with the first material. The first annular region is immediately adjacent to a perimeter of the substrate. The first annular region has a first outer perimeter proximate to the perimeter of the substrate and a first inner perimeter away from the perimeter of the substrate. The method also includes forming a second material in an interior region of the front side surface, the second material coating the front side surface without adhering to the annular region.
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公开(公告)号：US20180333680A1
公开(公告)日：2018-11-22
申请号：US15661551
申请日：2017-07-27
Applicant: Tokyo Electron Limited
Inventor： Hoyoung Kang , Anton deVilliers , Corey Lemley
CPC classification number: B01D65/02 , B01D29/012 , B01D29/111 , B01D63/06 , B01D63/14 , B01D71/36 , B01D71/56 , B01D2321/18
Abstract: A process is disclosed for wetting a filter cartridge used to treat a liquid solvent used in semiconductor manufacture. In the process, a filter cartridge having void spaces wherein the void spaces contain residual gas from the manufacturing process used to make the filter cartridge is connected to a source of purging gas. The purging gas is flowed through the filter cartridge to at least partially displace at least a portion of the residual gas from the manufacturing process used to make the filter cartridge. Next, liquid solvent is pumped through the filter cartridge so that the purging gas dissolves into the liquid solvent and to at least partially fill the void spaces to thereby at least partially wet out the filter cartridge with the liquid solvent.
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公开(公告)号：US10068764B2
公开(公告)日：2018-09-04
申请号：US15701780
申请日：2017-09-12
Applicant: Tokyo Electron Limited
Inventor： Kandabara N. Tapily , Gerrit J. Leusink , Cory Wajda , Hoyoung Kang
IPC: H01L21/302 , H01L21/461 , H01L21/02 , H01L21/311
Abstract: Embodiments of the invention provide methods for selective film deposition using a surface pretreatment. According to one embodiment, the method includes providing a substrate containing a dielectric layer and a metal layer, exposing the substrate to a reactant gas containing a molecule that forms self-assembled monolayers (SAMs) on the substrate, and thereafter, selectively depositing a metal oxide film on a surface of the dielectric layer relative to a surface of the metal layer by exposing the substrate to a deposition gas.
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公开(公告)号：US11791167B2
公开(公告)日：2023-10-17
申请号：US17121546
申请日：2020-12-14
Applicant: Tokyo Electron Limited
Inventor： Anthony R. Schepis , Hoyoung Kang
IPC: H01L21/3213 , H01L21/321 , H10B43/27 , H10B43/35
CPC classification number: H01L21/32137 , H01L21/32105 , H10B43/27 , H10B43/35
Abstract: A method of processing a substrate includes forming a channel through a substrate, depositing a layer of polycrystalline silicon on sidewalls of the channel, and oxidizing uncovered surfaces of the polycrystalline silicon with an oxidation agent. The oxidizing agent causes formation of an oxidized layer, the oxidized layer having a uniform thickness on uncovered surfaces of the polycrystalline silicon. The method includes removing the oxidized layer from the channel with a removal agent, and repeating steps of oxidizing uncovered surfaces and removing the oxidized layer until removing a predetermined amount of the layer of polycrystalline silicon.
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Patent Agency Ranking
26.发明授权公开(公告)号：US11567407B2
公开(公告)日：2023-01-31
申请号：US16586011
申请日：2019-09-27
Applicant: Tokyo Electron Limited
Inventor： Richard Farrell , Hoyoung Kang , David L. O'Meara
Abstract: A method of processing a substrate includes: providing structures on a surface of a substrate; depositing a self-assembled monolayer (SAM) over the structures and the substrate, the SAM being reactive to a predetermined wavelength of radiation; determining a first pattern of radiation exposure, the first pattern of radiation exposure having a spatially variable radiation intensity across the surface of the substrate and the structures; exposing the SAM to radiation according to the first pattern of radiation exposure, the SAM being configured to react with the radiation; developing the SAM with a predetermined removal fluid to remove portions of the SAM that are not protected from the predetermined fluid; and depositing a spacer material on the substrate and the structures, the spacer material being deposited at varying thicknesses based on an amount of the SAM remaining on the surface of the substrate and the structures.
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公开(公告)号：US11484993B2
公开(公告)日：2022-11-01
申请号：US17572188
申请日：2022-01-10
Applicant: Tokyo Electron Limited
Inventor： Hoyoung Kang , Anton J. deVilliers
IPC: B25B11/00 , H01L21/687 , H01L21/683
Abstract: An apparatus and method for uniformly holding a substrate without flexure or bending of the substrate, thereby enabling accurate shape measurements of the substrate such as wafer curvature, z-height values and other surface characteristics. Techniques include using a liquid as a supporting surface for a substrate thereby providing uniform support. Liquid used has a same specific gravity of a substrate being supported so that the substrate can float on the liquid without sinking. Uniform support of the substrate enables precision metrology.
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28.发明授权公开(公告)号：US11460775B2
公开(公告)日：2022-10-04
申请号：US16560776
申请日：2019-09-04
Applicant: Tokyo Electron Limited
Inventor： Hoyoung Kang , Anton J. Devilliers , Corey Lemley
Abstract: Methods for processing a substrate are provided. The method includes receiving a substrate. The substrate has a front side surface, a backside surface, and a side edge surface. The method also includes forming a first material in a first annular region of the front side surface, resulting in the first annular being coated with the first material. The first annular region is immediately adjacent to a perimeter of the substrate. The first annular region has a first outer perimeter proximate to the perimeter of the substrate and a first inner perimeter away from the perimeter of the substrate. The method also includes forming a second material in an interior region of the front side surface, the second material coating the front side surface without adhering to the annular region.
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公开(公告)号：US11314166B2
公开(公告)日：2022-04-26
申请号：US17145498
申请日：2021-01-11
Applicant: Tokyo Electron Limited
Inventor： Hoyoung Kang
IPC: G03F7/00 , H01L21/302 , H01L21/027
Abstract: Methods and systems for imprint lithography are described. In an embodiment, a method may include receiving a substrate in an imprint lithography chamber. Such a method may also include applying a deformable layer to a surface of the substrate. The method may further include injecting a gas that dissolves into the deformable layer more quickly than air into the chamber. Additionally, the method may include pressing a mold into the deformable layer. The method may also include controlling one or more processing parameters in order to achieve device formation objectives.
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公开(公告)号：US10890843B2
公开(公告)日：2021-01-12
申请号：US16046272
申请日：2018-07-26
Applicant: Tokyo Electron Limited
Inventor： Hoyoung Kang
IPC: G03F7/00 , H01L21/302 , H01L21/027
Abstract: Methods and systems for imprint lithography are described. In an embodiment, a method may include receiving a substrate in an imprint lithography chamber. Such a method may also include applying a deformable layer to a surface of the substrate. The method may further include injecting a gas that dissolves into the deformable layer more quickly than air into the chamber. Additionally, the method may include pressing a mold into the deformable layer. The method may also include controlling one or more processing parameters in order to achieve device formation objectives.
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