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    Method for filling recessed features in semiconductor devices with a low-resistivity metal
    1.
    发明授权
    Method for filling recessed features in semiconductor devices with a low-resistivity metal 有权

    公开(公告)号：US11024535B2

    公开(公告)日：2021-06-01

    申请号：US16598772

    申请日：2019-10-10

    Applicant: Tokyo Electron Limited

    Inventor： Kai-Hung Yu ,  David O'Meara ,  Nicholas Joy ,  Gyanaranjan Pattanaik ,  Robert Clark ,  Kandabara Tapily ,  Takahiro Hakamata ,  Cory Wajda ,  Gerrit Leusink

    IPC: H01L21/768

    Abstract: A method for filling recessed features with a low-resistivity metal. The method includes providing a patterned substrate containing a recessed feature formed in a first layer and a second layer that is exposed in the recessed feature, and pre-treating the substrate with a surface modifier that increases metal deposition selectivity on the second layer relative to on the first layer, depositing a metal layer on the substrate by vapor phase deposition, where the metal layer is preferentially deposited on the second layer in the recessed feature, and removing metal nuclei deposited on the first layer, including on a field area and on sidewalls of the first layer in the recessed feature, to selectively form the metal layer on the second layer in the recessed feature. The steps of pre-treating, depositing and removing may be repeated at least once to increase a thickness of the metal layer in the recessed feature.

    Method utilizing using post etch pattern encapsulation
    2.
    发明授权
    Method utilizing using post etch pattern encapsulation 有权

    公开(公告)号：US10950460B2

    公开(公告)日：2021-03-16

    申请号：US16533354

    申请日：2019-08-06

    Applicant: Tokyo Electron Limited

    Inventor： Angelique Raley ,  Andrew Metz ,  Cory Wajda ,  Junling Sun

    IPC: H01L21/3213 ,  H01L21/56 ,  H01L21/311 ,  H01L21/02

    Abstract: A process is provided in which etched layer(s) are protected from residues or defects caused by or resulting from exposure to atmospheric conditions. Protection is provided through the formation of an encapsulation layer post etch. In one embodiment, the encapsulation is provided by a thin layer formed in an atomic layer deposition (ALD) process. The thin layer prevents the etched layer(s) from exposure to air. This encapsulation process may take place after the etch process thus allowing for substrates to be subsequently exposed to atmospheric conditions with little or no queue time constraints being needed for staging subsequent wet clean processing steps. In one embodiment, the encapsulation process may be performed with no vacuum break between the etch process and the encapsulation process. In one embodiment, the encapsulation film is compatible with subsequent wet process steps and can be removed during this wet process steps without adverse effects.

    GERMANIUM-CONTAINING SEMICONDUCTOR DEVICE AND METHOD OF FORMING
    7.
    发明申请
    GERMANIUM-CONTAINING SEMICONDUCTOR DEVICE AND METHOD OF FORMING 审中-公开

    公开(公告)号：US20170084464A1

    公开(公告)日：2017-03-23

    申请号：US15267890

    申请日：2016-09-16

    Applicant: Tokyo Electron Limited

    Inventor： Kandabara N. Tapily ,  Robert D. Clark ,  Steven P. Consiglio ,  Cory Wajda ,  Gerrit J. Leusink

    IPC: H01L21/28 ,  H01L21/3105 ,  H01L29/51 ,  H01L21/02

    Abstract: A germanium-containing semiconductor device and a method for forming a germanium-containing semiconductor device are described. The method includes providing a germanium-containing substrate, depositing an aluminum-containing diffusion barrier layer on the germanium-containing substrate, depositing a high-k layer on the aluminum-containing diffusion barrier layer, and exposing the high-k layer to atomic oxygen to reduce the equivalent oxide thickness (EOT) of the high-k layer while avoiding oxidizing the germanium-containing substrate. The germanium-containing semiconductor device includes a germanium-containing substrate, an aluminum-containing diffusion barrier layer on the germanium-containing substrate, and a high-k layer on the aluminum-containing diffusion barrier layer, where the high-k layer has been exposed to atomic oxygen to reduce the EOT of the high-k layer while avoiding oxidizing the germanium-containing substrate.

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