-
公开(公告)号：US20240369761A1
公开(公告)日：2024-11-07
申请号：US18771191
申请日：2024-07-12
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor： Mohammed Rabiul Islam , Stefan Rusu , Weiwei Song
Abstract: A structure includes an optical interposer attached to a package substrate, wherein the optical interposer includes a silicon waveguide, a first photonic component optically coupled to the silicon waveguide, a second photonic component optically coupled to the silicon waveguide, and an interconnect structure extending over the silicon waveguide, over the first photonic component, and over the second photonic component, wherein the interconnect structure is electrically connected to the first photonic component and to the second photonic component, a first semiconductor device attached to the interconnect structure, wherein the first semiconductor device is electrically connected to the first photonic component through the interconnect structure, and a second semiconductor device attached to the interconnect structure, wherein the second semiconductor device is electrically connected to the second photonic component through the interconnect structure.
-
公开(公告)号：US20230375862A1
公开(公告)日：2023-11-23
申请号：US18363489
申请日：2023-08-01
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor： Weiwei Song , Stefan Rusu , Chan-Hong Chern , Chih-Chang Lin
CPC classification number: G02F1/025 , G02F1/2255 , G02F1/2257 , G02F2201/508 , G02F2201/58
Abstract: A semiconductor device include: a first bus waveguide; a first silicon ring optically coupled to the first bus waveguide; a backup silicon ring optically coupled to the first bus waveguide; a first heater and a second heater configured to heat the first silicon ring and the backup silicon ring, respectively; and a first switch, where the first switch is configured to electrically couple the first silicon ring to a first radio frequency (RF) circuit when the first switch is at a first switching position, and is configured to electrically couple the backup silicon ring to the first RF circuit when the first switch is at a second switching position.
-
公开(公告)号：US11808977B2
公开(公告)日：2023-11-07
申请号：US18080684
申请日：2022-12-13
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor： Weiwei Song , Stefan Rusu , Mohammed Rabiul Islam
CPC classification number: G02B6/132 , G02B6/136 , H04B10/25 , G02B2006/12038 , G02B2006/12061 , G02B2006/12164
Abstract: Structures and methods for high speed interconnection in photonic systems are described herein. In one embodiment, a photonic device is disclosed. The photonic device includes: a substrate; a plurality of metal layers on the substrate; a photonic material layer comprising graphene over the plurality of metal layers; and an optical routing layer comprising a waveguide on the photonic material layer.
-
公开(公告)号：US11525957B2
公开(公告)日：2022-12-13
申请号：US17150628
申请日：2021-01-15
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor： Weiwei Song , Chan-Hong Chern , Chih-Chang Lin , Stefan Rusu , Min-Hsiang Hsu
Abstract: Methods of fabricating optical devices with high refractive index materials are disclosed. The method includes forming a first oxide layer on a substrate and forming a patterned template layer with first and second trenches on the first oxide layer. A material of the patterned template layer has a first refractive index. The method further includes forming a first portion of a waveguide and a first portion of an optical coupler within the first and second trenches, respectively, forming a second portion of the waveguide and a second portion of the optical coupler on a top surface of the patterned template layer, and depositing a cladding layer on the second portions of the waveguide and optical coupler. The waveguide and the optical coupler include materials with a second refractive index that is greater than the first refractive index.
-
公开(公告)号：US20220365281A1
公开(公告)日：2022-11-17
申请号：US17876779
申请日：2022-07-29
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor： Weiwei Song , Chang-Hong Chern , Chewn-Pu Jou , Stefan Rusu , Min-Hsiang Hsu
Abstract: An optical system with different optical coupling device configurations and a method of fabricating the same are disclosed. An optical system includes a substrate, a waveguide disposed on the substrate, an optical fiber optically coupled to the waveguide, and an optical coupling device disposed between the optical fiber and the waveguide. The optical coupling device configured to optically couple the optical fiber to the waveguide. The optical coupling device includes a dielectric layer disposed on the substrate, a semiconductor tapered structure disposed in a first horizontal plane within the dielectric layer, and a multi-tip dielectric structure disposed in a second horizontal plane within the dielectric layer. The first and second horizontal planes are different from each other
-
Patent Agency Ranking
公开(公告)号：US20210223478A1
公开(公告)日：2021-07-22
申请号：US16745561
申请日：2020-01-17
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor： Weiwei Song , Stefan Rusu , Chewn-Pu Jou , Huan-Neng Chen
Abstract: A method includes etching a silicon layer to form a silicon slab and an upper silicon region over the silicon slab, and implanting the silicon slab and the upper silicon region to form a p-type region, an n-type region, and an intrinsic region between the p-type region and the n-type region. The method further includes etching the p-type region, the n-type region, and the intrinsic region to form a trench. The remaining portions of the upper silicon region form a Multi-Mode Interferometer (MMI) region. An epitaxy process is performed to grow a germanium region in the trench. Electrical connections are made to connect to the p-type region and the n-type region.
-
公开(公告)号：US12276836B2
公开(公告)日：2025-04-15
申请号：US18078793
申请日：2022-12-09
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor： Chan-Hong Chern , Chih-Chang Lin , Min-Hsiang Hsu , Weiwei Song , Chewn-Pu Jou , Feng-Wei Kuo , Huan-Neng Chen , Lan-Chou Cho
Abstract: A semiconductor structure according to the present disclosure includes a buried oxide layer, a first dielectric layer disposed over the buried oxide layer, a first waveguide feature disposed in the first dielectric layer, a second dielectric layer disposed over the first dielectric layer and the first waveguide feature, a third dielectric layer disposed over the second dielectric layer, and a second waveguide feature disposed in the second dielectric layer and the third dielectric layer. The second waveguide feature is disposed over the first waveguide feature and a portion of the second waveguide feature vertically overlaps a portion of the first waveguide feature.
-
公开(公告)号：US12253745B2
公开(公告)日：2025-03-18
申请号：US18363489
申请日：2023-08-01
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor： Weiwei Song , Stefan Rusu , Chan-Hong Chern , Chih-Chang Lin
Abstract: A semiconductor device include: a first bus waveguide; a first silicon ring optically coupled to the first bus waveguide; a backup silicon ring optically coupled to the first bus waveguide; a first heater and a second heater configured to heat the first silicon ring and the backup silicon ring, respectively; and a first switch, where the first switch is configured to electrically couple the first silicon ring to a first radio frequency (RF) circuit when the first switch is at a first switching position, and is configured to electrically couple the backup silicon ring to the first RF circuit when the first switch is at a second switching position.
-
公开(公告)号：US12140800B2
公开(公告)日：2024-11-12
申请号：US17808813
申请日：2022-06-24
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor： Weiwei Song , Stefan Rusu , Chewn-Pu Jou , Huan-Neng Chen
Abstract: A method includes etching a silicon layer to form a silicon slab and an upper silicon region over the silicon slab, and implanting the silicon slab and the upper silicon region to form a p-type region, an n-type region, and an intrinsic region between the p-type region and the n-type region. The method further includes etching the p-type region, the n-type region, and the intrinsic region to form a trench. The remaining portions of the upper silicon region form a Multi-Mode Interferometer (MMI) region. An epitaxy process is performed to grow a germanium region in the trench. Electrical connections are made to connect to the p-type region and the n-type region.
-
公开(公告)号：US20230111170A1
公开(公告)日：2023-04-13
申请号：US18078793
申请日：2022-12-09
Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
Inventor： Chan-Hong Chern , Chih-Chang Lin , Min-Hsiang Hsu , Weiwei Song , Chewn-Pu Jou , Feng-Wei Kuo , Huan-Neng Chen , Lan-Chou Cho
Abstract: A semiconductor structure according to the present disclosure includes a buried oxide layer, a first dielectric layer disposed over the buried oxide layer, a first waveguide feature disposed in the first dielectric layer, a second dielectric layer disposed over the first dielectric layer and the first waveguide feature, a third dielectric layer disposed over the second dielectric layer, and a second waveguide feature disposed in the second dielectric layer and the third dielectric layer. The second waveguide feature is disposed over the first waveguide feature and a portion of the second waveguide feature vertically overlaps a portion of the first waveguide feature.
-
-
-
-
-
-
-
-
-
Search Results
32
records
(took 0.022 seconds)
