Fabrication process control in optical devices

    公开(公告)号:US12228768B2

    公开(公告)日:2025-02-18

    申请号:US18063186

    申请日:2022-12-08

    Abstract: Methods of fabricating optical devices with high refractive index materials are disclosed. The method includes forming a first oxide layer on a substrate and forming a patterned template layer with first and second trenches on the first oxide layer. A material of the patterned template layer has a first refractive index. The method further includes forming a first portion of a waveguide and a first portion of an optical coupler within the first and second trenches, respectively, forming a second portion of the waveguide and a second portion of the optical coupler on a top surface of the patterned template layer, and depositing a cladding layer on the second portions of the waveguide and optical coupler. The waveguide and the optical coupler include materials with a second refractive index that is greater than the first refractive index.

    GERMANIUM PHOTODETECTOR EMBEDDED IN A MULTI-MODE INTERFEROMETER

    公开(公告)号:US20240393537A1

    公开(公告)日:2024-11-28

    申请号:US18788558

    申请日:2024-07-30

    Abstract: A method includes etching a silicon layer to form a silicon slab and an upper silicon region over the silicon slab, and implanting the silicon slab and the upper silicon region to form a p-type region, an n-type region, and an intrinsic region between the p-type region and the n-type region. The method further includes etching the p-type region, the n-type region, and the intrinsic region to form a trench. The remaining portions of the upper silicon region form a Multi-Mode Interferometer (MMI) region. An epitaxy process is performed to grow a germanium region in the trench. Electrical connections are made to connect to the p-type region and the n-type region.

    Photonic Semiconductor Device And Method
    4.
    发明公开

    公开(公告)号:US20230305226A1

    公开(公告)日:2023-09-28

    申请号:US18327415

    申请日:2023-06-01

    CPC classification number: G02B6/12004 H01L24/16 G02B6/13 H01L25/00 H01L23/5385

    Abstract: A structure includes an optical interposer attached to a package substrate, wherein the optical interposer includes a silicon waveguide, a first photonic component optically coupled to the silicon waveguide, a second photonic component optically coupled to the silicon waveguide, and an interconnect structure extending over the silicon waveguide, over the first photonic component, and over the second photonic component, wherein the interconnect structure is electrically connected to the first photonic component and to the second photonic component, a first semiconductor device attached to the interconnect structure, wherein the first semiconductor device is electrically connected to the first photonic component through the interconnect structure, and a second semiconductor device attached to the interconnect structure, wherein the second semiconductor device is electrically connected to the second photonic component through the interconnect structure.

    Photonic semiconductor device and method

    公开(公告)号:US11215753B2

    公开(公告)日:2022-01-04

    申请号:US16803153

    申请日:2020-02-27

    Abstract: A structure includes an optical interposer attached to a package substrate, wherein the optical interposer includes a silicon waveguide, a first photonic component optically coupled to the silicon waveguide, a second photonic component optically coupled to the silicon waveguide, and an interconnect structure extending over the silicon waveguide, over the first photonic component, and over the second photonic component, wherein the interconnect structure is electrically connected to the first photonic component and to the second photonic component, a first semiconductor device attached to the interconnect structure, wherein the first semiconductor device is electrically connected to the first photonic component through the interconnect structure, and a second semiconductor device attached to the interconnect structure, wherein the second semiconductor device is electrically connected to the second photonic component through the interconnect structure.

    Package structure and method of fabricating the same

    公开(公告)号:US11094682B2

    公开(公告)日:2021-08-17

    申请号:US16744194

    申请日:2020-01-16

    Abstract: A package structure includes a package component, a stacked die package, a plurality of optical fibers and a heat spreading structure. The stacked die package is disposed on and electrically connected to the package component. The stacked die package includes a first semiconductor die and a plurality of second semiconductor dies. The first semiconductor die has a plurality of first bonding elements. The second semiconductor dies are disposed on the first semiconductor die and have a plurality of second bonding elements, wherein the plurality of first bonding elements and the plurality of second bonding elements are facing one another and bonded together through hybrid bonding. The plurality of optical fibers is attached to the plurality of second semiconductor dies of the stacked die package. The heat spreading structure is disposed on the package component and surrounding the stacked die package.

    PACKAGE STRUCTURE AND METHOD OF FABRICATING THE SAME

    公开(公告)号:US20210225824A1

    公开(公告)日:2021-07-22

    申请号:US16744194

    申请日:2020-01-16

    Abstract: A package structure includes a package component, a stacked die package, a plurality of optical fibers and a heat spreading structure. The stacked die package is disposed on and electrically connected to the package component. The stacked die package includes a first semiconductor die and a plurality of second semiconductor dies. The first semiconductor die has a plurality of first bonding elements. The second semiconductor dies are disposed on the first semiconductor die and have a plurality of second bonding elements, wherein the plurality of first bonding elements and the plurality of second bonding elements are facing one another and bonded together through hybrid bonding. The plurality of optical fibers is attached to the plurality of second semiconductor dies of the stacked die package. The heat spreading structure is disposed on the package component and surrounding the stacked die package.

    Multi-tip optical coupling devices
    10.
    发明授权

    公开(公告)号:US11860421B2

    公开(公告)日:2024-01-02

    申请号:US17097270

    申请日:2020-11-13

    CPC classification number: G02B6/305 G02B6/262 G02B6/30

    Abstract: An optical system with different optical coupling device configurations and a method of fabricating the same are disclosed. An optical system includes a substrate, a waveguide disposed on the substrate, an optical fiber optically coupled to the waveguide, and an optical coupling device disposed between the optical fiber and the waveguide. The optical coupling device configured to optically couple the optical fiber to the waveguide. The optical coupling device includes a dielectric layer disposed on the substrate, a semiconductor tapered structure disposed in a first horizontal plane within the dielectric layer, and a multi-tip dielectric structure disposed in a second horizontal plane within the dielectric layer. The first and second horizontal planes are different from each other.

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