利索-全球专利检索

  1. 登录
  2. 注册

搜索结果

108 条记录 (耗时 0.043 秒)

    Polymer, resist composition and patterning process
    22.
    发明授权
    Polymer, resist composition and patterning process 有权
    聚合物，抗蚀剂组合物和图案化工艺

    公开(公告)号：US06566037B2

    公开(公告)日：2003-05-20

    申请号：US09797878

    申请日：2001-03-05

    申请人： Tsunehiro Nishi ,  Koji Hasegawa ,  Takeru Watanabe ,  Takeshi Kinsho ,  Jun Hatakeyama

    发明人： Tsunehiro Nishi ,  Koji Hasegawa ,  Takeru Watanabe ,  Takeshi Kinsho ,  Jun Hatakeyama

    IPC分类号： G03F7038

    CPC分类号： C08F232/08 ,  G03F7/0045 ,  G03F7/039 ,  Y10S430/106 ,  Y10S430/111

    摘要： A polymer comprising recurring units of formula (1) and having a Mw of 1,000-500,000 is provided. R1 is H, methyl or CH2CO2R3, R2 is H, methyl or CO2R3, R3 is alkyl, R4 is H, alkyl, alkoxyalkyl or acyl, R5 and R15 are acid labile groups, and at least one of R6 to R9 is a carboxyl or hydroxyl-containing monovalent hydrocarbon group, and the reminders are H or alkyl, at least one of R10 to R13 is a monovalent hydrocarbon group containing a —CO2— partial structure, and the reminders are H or alkyl, R14 is a polycyclic hydrocarbon group or polycyclic hydrocarbon-containing alkyl group, Z is a trivalent hydrocarbon group, k=0 or 1, x is>0, a, b, c and d are≧0, satisfying x+a+b+c+d=1. A resist composition comprising the polymer has significantly improved sensitivity, resolution and etching resistance and is very useful in microfabrication.

    摘要翻译： 提供了包含式（1）的重复单元并且具有1,000-500,000的Mw的聚合物.R1是H，甲基或CH2CO2R3，R2是H，甲基或CO2R3，R3是烷基，R4是H，烷基，烷氧基烷基或酰基 R 5和R 15为酸不稳定基团，R 6〜R 9中的至少一个为羧基或羟基的一价烃基，提醒为H或烷基，R 10〜R 13中的至少一个为含有 -CO 2部分结构，提醒为H或烷基，R 14为多环烃基或含多环烃基的烷基，Z为三价烃基，k = 0或1，x为> 0，a，b， c和d为> = 0，满足x + a + b + c + d = 1。 包含聚合物的抗蚀剂组合物具有显着提高的灵敏度，分辨率和耐蚀刻性，并且在微细加工中非常有用。

    Resist-modifying composition and pattern forming process
    25.
    发明授权
    Resist-modifying composition and pattern forming process 有权
    抗蚀剂改性组合物和图案形成工艺

    公开(公告)号：US08426105B2

    公开(公告)日：2013-04-23

    申请号：US12786759

    申请日：2010-05-25

    申请人： Takeru Watanabe ,  Masashi Iio ,  Kazuhiro Katayama ,  Jun Hatakeyama ,  Tsunehiro Nishi ,  Takeshi Kinsho

    发明人： Takeru Watanabe ,  Masashi Iio ,  Kazuhiro Katayama ,  Jun Hatakeyama ,  Tsunehiro Nishi ,  Takeshi Kinsho

    IPC分类号： G03F7/004

    CPC分类号： G03F7/0397 ,  G03F7/0035 ,  G03F7/0046 ,  G03F7/2041 ,  G03F7/40

    摘要： A patterning process includes (1) coating a first positive resist composition onto a substrate, baking, exposing, post-exposure baking, and alkali developing to form a first resist pattern, (2) coating a resist-modifying composition onto the first resist pattern and heating to effect modifying treatment, and (3) coating a second positive resist composition, baking, exposing, post-exposure baking, and alkali developing to form a second resist pattern. The resist-modifying composition comprises a carbamate compound and a solvent.

    摘要翻译： 图案化工艺包括（1）将第一正性抗蚀剂组合物涂覆在基材上，烘烤，曝光，曝光后烘烤和碱显影以形成第一抗蚀剂图案，（2）将抗蚀剂改性组合物涂覆到第一抗蚀剂图案上 加热进行改性处理，（3）涂布第二正性抗蚀剂组合物，烘烤，曝光，曝光后烘烤和碱显影以形成第二抗蚀剂图案。 抗蚀剂改性组合物包含氨基甲酸酯化合物和溶剂。

    Double patterning process
    26.
    发明授权
    Double patterning process 有权
    双重图案化工艺

    公开(公告)号：US08247166B2

    公开(公告)日：2012-08-21

    申请号：US12549792

    申请日：2009-08-28

    申请人： Katsuya Takemura ,  Tsunehiro Nishi ,  Jun Hatakeyama ,  Masaki Ohashi ,  Takeshi Kinsho

    发明人： Katsuya Takemura ,  Tsunehiro Nishi ,  Jun Hatakeyama ,  Masaki Ohashi ,  Takeshi Kinsho

    IPC分类号： G03F7/26

    CPC分类号： G03F7/40 ,  G03F7/0035 ,  G03F7/0397 ,  G03F7/11 ,  G03F7/2041 ,  G03F7/322

    摘要： A double pattern is formed by coating a first positive resist composition onto a substrate, patternwise exposure to radiation, and development with alkaline developer to form a first resist pattern; applying heat and/or radiation to render the first resist pattern insoluble in a second solvent and in a second developer; coating a second resist composition on the first resist pattern, patternwise exposure to radiation, and development with second developer to form a second resist pattern. The resin in the first resist composition comprises recurring units of formula (1) wherein R1 is H, CH3 or CF3, m=1 or 2, n=0 or 1.

    摘要翻译： 通过将第一正性抗蚀剂组合物涂布在基材上，图案地暴露于辐射并用碱性显影剂显影以形成第一抗蚀剂图案形成双重图案; 施加热和/或辐射以使第一抗蚀剂图案不溶于第二溶剂和第二显影剂; 在第一抗蚀剂图案上涂覆第二抗蚀剂组合物，图案地暴露于辐射，并用第二显影剂显影以形成第二抗蚀剂图案。 第一抗蚀剂组合物中的树脂包含式（1）的重复单元，其中R 1是H，CH 3或CF 3，m = 1或2，n = 0或1。

    RESIST-MODIFYING COMPOSITION AND PATTERN FORMING PROCESS
    30.
    发明申请
    RESIST-MODIFYING COMPOSITION AND PATTERN FORMING PROCESS 有权
    电阻修饰组合物和图案形成工艺

    公开(公告)号：US20100297563A1

    公开(公告)日：2010-11-25

    申请号：US12785930

    申请日：2010-05-24

    申请人： Takeru Watanabe ,  Kazuhiro Katayama ,  Masashi Iio ,  Jun Hatakeyama ,  Tsunehiro Nishi ,  Takeshi Kinsho

    发明人： Takeru Watanabe ,  Kazuhiro Katayama ,  Masashi Iio ,  Jun Hatakeyama ,  Tsunehiro Nishi ,  Takeshi Kinsho

    IPC分类号： G03F7/20

    CPC分类号： G03F7/0035 ,  G03F7/40 ,  H01L21/0273

    摘要： A patterning process includes (1) coating a first positive resist composition onto a substrate, baking, exposing, post-exposure baking, and alkali developing to form a first resist pattern, (2) coating a resist-modifying composition onto the first resist pattern and heating to effect modifying treatment, and (3) coating a second positive resist composition, baking, exposing, post-exposure baking, and alkali developing to form a second resist pattern. The resist modifying composition comprises a base resin comprising recurring units having formula (1) wherein A1 is alkylene, R1 is H or methyl, R2 is alkyl or bond together to form a nitrogen-containing heterocycle, and an alcohol-based solvent.

    摘要翻译： 图案化工艺包括（1）将第一正性抗蚀剂组合物涂覆在基材上，烘烤，曝光，曝光后烘烤和碱显影以形成第一抗蚀剂图案，（2）将抗蚀剂改性组合物涂覆到第一抗蚀剂图案上 加热进行改性处理，（3）涂布第二正性抗蚀剂组合物，烘烤，曝光，曝光后烘烤和碱显影以形成第二抗蚀剂图案。 抗蚀剂改性组合物包括含有式（1）的重复单元的基础树脂，其中A1是亚烷基，R1是H或甲基，R2是烷基或键合在一起形成含氮杂环，和醇类溶剂。