公开(公告)号：US20110292538A1

公开(公告)日：2011-12-01

申请号：US13047757

申请日：2011-03-14

申请人： Tatsuya HAGA ,  Hideaki Tanaka ,  Tatsuo Nitta ,  Tadashi Hongawa ,  Takahiro Shinbori

发明人： Tatsuya HAGA ,  Hideaki Tanaka ,  Tatsuo Nitta ,  Tadashi Hongawa ,  Takahiro Shinbori

IPC分类号： G11B15/04

CPC分类号： G11B5/012 ,  B82Y25/00 ,  G01R33/093 ,  G11B2005/0005

摘要： According to one embodiment, a recording medium controller includes a recording medium, an input module, a reading module, and a writing module. The recording medium includes a write area and an escape area. The write area includes track groups. Each of the track groups is a unit for writing data and includes tracks. The input module receives a write command for data. The reading module reads data stored in the escape area and data from a first track group of the track groups. The writing module writes data received for the write command to the escape area, and writes merged data obtained by merging the data read from the escape area and the data read from the first track group to each track of a second track group of the track groups by using a shingle recording technique in which adjacent tracks are partly overlapped with each other.

摘要翻译： 根据一个实施例，记录介质控制器包括记录介质，输入模块，读取模块和写入模块。 记录介质包括写入区域和逃逸区域。 写入区域包括轨道组。 每个轨道组是用于写入数据的单元，并且包括轨道。 输入模块接收数据写入命令。 读取模块读取存储在转义区域中的数据和来自轨道组的第一轨道组的数据。 写入模块将写入命令接收到的数据写入转义区域，并将从转义区域读取的数据和从第一轨道组读取的数据合并获得的合并数据写入轨道组的第二轨道组的每个轨道 通过使用相邻轨道彼此部分重叠的瓦片记录技术。

公开(公告)号：US20110280607A1

公开(公告)日：2011-11-17

申请号：US13104609

申请日：2011-05-10

申请人： Hideaki Tanaka

发明人： Hideaki Tanaka

IPC分类号： G03G15/20 ,  G03G13/20

CPC分类号： G03G21/206 ,  G03G15/2014 ,  G03G2215/2029

摘要： A fixing device by fixing an image on a recording material at a nip portion, includes: an air blower which blows air sent by a fan on the neighborhood of an exit of the nip portion; a pressure contact and separation switching section which switches from a separated state in which a pressure member is separated from a fixing member to a pressure contact state in which the pressure member is in contact with the heating member at a moment that is earlier by a predetermined period of time than a time when a leading edge of the recording material arrives at the nip portion; and a controller which controls the fan to start its rotation within a first time period between a time when a changeover from the separated state to the pressure contact state is started and a time when the leading edge of the recording material arrives at the nip portion.

摘要翻译： 一种定影装置，其通过在压区部分将图像固定在记录材料上，包括：吹风机，其将由风扇传送的空气吹送到压区部分的出口附近; 压力接触分离切换部，其从压力部件与固定部件分离的分离状态切换到压力部件与加热部件接触的压力接触状态，所述压力部件在更早的预定时刻 比记录材料的前缘到达辊隙部分时的时间长; 以及控制器，其控制风扇在从分离状态到压力接触状态的切换开始的时间和记录材料的前端到达辊隙部分的时间之间的第一时间段内开始旋转。

公开(公告)号：US20110117699A1

公开(公告)日：2011-05-19

申请号：US13014190

申请日：2011-01-26

申请人： Tetsuya HAYASHI ,  Masakatsu Hoshi ,  Yoshio Shimoida ,  Hideaki Tanaka ,  Shigeharu Yamagami

发明人： Tetsuya HAYASHI ,  Masakatsu Hoshi ,  Yoshio Shimoida ,  Hideaki Tanaka ,  Shigeharu Yamagami

IPC分类号： H01L21/336 ,  H01L21/04

CPC分类号： H01L29/7828 ,  H01L29/0623 ,  H01L29/1608 ,  H01L29/267 ,  H01L29/66068

摘要： A semiconductor substrate made of a semiconductor material is prepared, and a hetero semiconductor region is formed on the semiconductor substrate to form a heterojunction in an interface between the hetero semiconductor region and the semiconductor substrate. The hetero semiconductor region is made of a semiconductor material having a bandgap different from that of the semiconductor material, and a part of the hetero semiconductor region includes a film thickness control portion whose film thickness is thinner than that of the other part thereof. By oxidizing the hetero semiconductor region with a thickness equal to the film thickness of the film thickness control portion, a gate insulating film adjacent to the heterojunction is formed. A gate electrode is formed on the gate insulating film. This makes it possible to manufacture a semiconductor device including the gate insulating film with a lower ON resistance, and with a higher insulating characteristic and reliability.

摘要翻译： 制备由半导体材料制成的半导体衬底，并且在半导体衬底上形成异质半导体区域，以在异质半导体区域和半导体衬底之间的界面中形成异质结。 异质半导体区域由具有与半导体材料的带隙不同的带隙的半导体材料制成，并且异质半导体区域的一部分包括膜厚度比其他部分薄的膜厚控制部分。 通过以等于膜厚控制部分的膜厚的厚度氧化杂半导体区域，形成与异质结相邻的栅极绝缘膜。 在栅极绝缘膜上形成栅电极。 这使得可以制造包括具有较低导通电阻的栅极绝缘膜以及更高的绝缘特性和可靠性的半导体器件。

公开(公告)号：US20110116192A1

公开(公告)日：2011-05-19

申请号：US12642739

申请日：2009-12-18

申请人： Shigeo FUJITA ,  Masahiko Soga ,  Hideaki Tanaka ,  Yuji Ueda ,  Tomohiro Okada ,  Takayoshi Ohtsu ,  Wataru Kimura ,  Yohji Maruyama

发明人： Shigeo FUJITA ,  Masahiko Soga ,  Hideaki Tanaka ,  Yuji Ueda ,  Tomohiro Okada ,  Takayoshi Ohtsu ,  Wataru Kimura ,  Yohji Maruyama

IPC分类号： G11B5/60

CPC分类号： G11B5/1278 ,  G11B5/3133 ,  G11B5/3136 ,  G11B5/3967 ,  G11B5/6005 ,  G11B5/6064 ,  G11B2005/0005

摘要： A head-slider. The head-slider includes a slider, and a thin-film magnetic-recording head. The thin-film magnetic-recording head includes: a read element; a write element; a non-magnetic insulating protective layer disposed around both read and write elements; a resist disposed at a position further away from an air-bearing surface than the read element; and, a hard-material member including a material selected from the group consisting of silicon carbide and tungsten, which is disposed at a position further away from the air-bearing surface than the read element and the write element. Both an end of the resist and an end of the hard-material member overlap the write element when viewed in a stacking direction. A ratio of a distance from the air-bearing surface to a deepest end of the hard-material member to a distance from the air-bearing surface to a deepest end of the resist is at least 0.9.

摘要翻译： 头滑块。 磁头滑动器包括滑块和薄膜磁记录头。 薄膜磁记录头包括：读取元件; 写元素 设置在读取和写入元件周围的非磁性绝缘保护层; 设置在远离所述读取元件的空气轴承表面的位置处的抗蚀剂; 以及包括选自碳化硅和钨的材料的硬质材料构件，其被设置在比读取元件和写入元件更远离空气轴承表面的位置处。 当在堆叠方向上观察时，抗蚀剂的一端和硬质材料构件的一端与写入元件重叠。 从空气轴承表面到硬质材料构件的最深端的距离与从空气轴承表面到抗蚀剂的最深端的距离的比率至少为0.9。

公开(公告)号：US07910923B2

公开(公告)日：2011-03-22

申请号：US11961221

申请日：2007-12-20

申请人： Tetsuya Hayashi ,  Masakatsu Hoshi ,  Hideaki Tanaka ,  Shigeharu Yamagami

发明人： Tetsuya Hayashi ,  Masakatsu Hoshi ,  Hideaki Tanaka ,  Shigeharu Yamagami

IPC分类号： H01L29/04

CPC分类号： H01L27/088 ,  H01L21/32139 ,  H01L27/0605 ,  H01L29/0619 ,  H01L29/0623 ,  H01L29/1608 ,  H01L29/267 ,  H01L29/4236 ,  H01L29/66068 ,  H01L29/7828

摘要： A semiconductor device with superior long-term reliability is disclosed that alleviates current concentration into a switch structure arranged at an outermost portion. The semiconductor device comprises hetero semiconductor regions formed of polycrystalline silicon having a band gap width different from that of a drift region and hetero-adjoined with the drift region, a gate insulation film, a gate electrode adjoined to the gate insulation film, a source electrode connected to a source contact portion of the hetero semiconductor regions and an outermost switch structure and a repeating portion switch structure with a drain electrode connected to a substrate region. In a conduction state, the outermost switch structure comprises a mechanism in which the current flowing at the outermost switch structure becomes smaller than the current flowing at the repeating portion switch structure.

摘要翻译： 公开了一种具有优异的长期可靠性的半导体器件，其将电流浓度减轻到布置在最外部的开关结构。 半导体器件包括由多晶硅形成的异质半导体区域，该多晶硅的带隙宽度与漂移区域的带隙宽度不同，并且与漂移区域异质相邻，栅极绝缘膜，与栅极绝缘膜邻接的栅电极，源电极 连接到异质半导体区域的源极接触部分和最外面的开关结构以及具有连接到衬底区域的漏电极的重复部分开关结构。 在导通状态下，最外面的开关结构包括一种机构，其中在最外侧开关结构处流动的电流变得小于在重复部分开关结构处流动的电流。

公开(公告)号：US07904004B2

公开(公告)日：2011-03-08

申请号：US11640258

申请日：2006-12-18

申请人： Hideaki Tanaka

发明人： Hideaki Tanaka

IPC分类号： G03G15/08

CPC分类号： G03G15/0894 ,  G03G15/0855 ,  G03G15/0865 ,  G03G15/0875 ,  G03G2221/1633

摘要： The present invention provides a method of filling a powder into a powder supplying device including: a housing that accommodates the powder; a rotating member disposed rotatably within the housing; a sheet-shaped conveying member fixed to the rotating member, whose free end side region, which is different from a fixed portion, slidingly-contacts and moves along an inner wall of the housing by rotation of the rotating member to convey the powder; and a powder supply opening provided at the housing at a downstream side in a direction of conveying the powder, the method including filling, into the housing, the powder in an amount such that, at a time when usage of the powder supplying device starts, a height of the powder is greater than or equal to a height of a bottom surface of the rotating member.

摘要翻译： 本发明提供了一种将粉末填充到粉末供应装置中的方法，包括：容纳粉末的壳体; 旋转构件，其可旋转地设置在所述壳体内; 固定到所述旋转构件的片状输送构件，所述片状输送构件的自由端侧区域与固定部分不同，所述旋转构件的旋转构件通过旋转而滑动地接触并沿着所述壳体的内壁移动以输送所述粉末; 以及粉末供给口，其设置在所述壳体的沿着输送粉末的方向的下游侧，所述方法包括将所述粉末填充到所述壳体中，使得在所述粉末供给装置的使用开始时， 粉末的高度大于或等于旋转构件的底面的高度。

公开(公告)号：US07902025B2

公开(公告)日：2011-03-08

申请号：US11773649

申请日：2007-07-05

申请人： Tetsuya Hayashi ,  Masakatsu Hoshi ,  Yoshio Shimoida ,  Hideaki Tanaka ,  Shigeharu Yamagami

发明人： Tetsuya Hayashi ,  Masakatsu Hoshi ,  Yoshio Shimoida ,  Hideaki Tanaka ,  Shigeharu Yamagami

IPC分类号： H01L21/336

CPC分类号： H01L29/7828 ,  H01L29/0623 ,  H01L29/1608 ,  H01L29/267 ,  H01L29/66068

摘要： A semiconductor substrate made of a semiconductor material is prepared, and a hetero semiconductor region is formed on the semiconductor substrate to form a heterojunction in an interface between the hetero semiconductor region and the semiconductor substrate. The hetero semiconductor region is made of a semiconductor material having a bandgap different from that of the semiconductor material, and a part of the hetero semiconductor region includes a film thickness control portion whose film thickness is thinner than that of the other part thereof. By oxidizing the hetero semiconductor region with a thickness equal to the film thickness of the film thickness control portion, a gate insulating film adjacent to the heterojunction is formed. A gate electrode is formed on the gate insulating film. This makes it possible to manufacture a semiconductor device including the gate insulating film with a lower ON resistance, and with a higher insulating characteristic and reliability.

摘要翻译： 制备由半导体材料制成的半导体衬底，并且在半导体衬底上形成异质半导体区域，以在异质半导体区域和半导体衬底之间的界面中形成异质结。 异质半导体区域由具有与半导体材料的带隙不同的带隙的半导体材料制成，并且异质半导体区域的一部分包括膜厚度比其他部分薄的膜厚控制部分。 通过以等于膜厚控制部分的膜厚的厚度氧化杂半导体区域，形成与异质结相邻的栅极绝缘膜。 在栅极绝缘膜上形成栅电极。 这使得可以制造包括具有较低导通电阻的栅极绝缘膜以及更高的绝缘特性和可靠性的半导体器件。

公开(公告)号：US20100146456A1

公开(公告)日：2010-06-10

申请号：US12522821

申请日：2008-01-08

申请人： Hideaki Tanaka

发明人： Hideaki Tanaka

IPC分类号： G06F3/048

CPC分类号： G06F3/04892 ,  G06F3/0482 ,  G06F3/0485 ,  G06F17/30905 ,  H04M1/233 ,  H04M1/72561

摘要： A browsing method by which within-site browsing and within-screen browsing can be switched over to each other without making the user conscious of it is provided. A control means superposes and superposingly displays a Web page and a pointer moving in response to the operation applied to a pointing device (3) and arrow keys (4) on a display (2) in the within-screen browsing. If the pointer moves out of the area, the area of the Web page to be displayed on the display (2) is changed. The control means also changes the area of the Web page displayed on the display (2) in response to the operation applied to the pointing device (3) and the arrow keys (4) in the within-site browsing. The control means then changes the within-screen browsing to the within-site browsing and vice versa.

摘要翻译： 提供了一种使网站内浏览和屏幕内浏览可以切换到彼此而不使用户意识到的浏览方法。 控制装置叠加并叠加地显示响应于在屏幕内浏览中应用于显示器（2）上的指示设备（3）和箭头键（4）的操作而移动的网页和指针。 如果指针移出该区域，则显示（2）上要显示的网页区域发生变化。 响应于在站点内浏览中应用于指示装置（3）和箭头键（4）的操作，控制装置还改变显示在显示器（2）上的网页的区域。 然后，控制装置将屏幕内浏览改变为站内浏览，反之亦然。

公开(公告)号：US07702475B2

公开(公告)日：2010-04-20

申请号：US12126466

申请日：2008-05-23

申请人： Hideaki Tanaka ,  Toshiaki Akasaka

发明人： Hideaki Tanaka ,  Toshiaki Akasaka

IPC分类号： G01R31/02 ,  G06F11/273

CPC分类号： G01R31/2891

摘要： An inspecting method includes registering a pre-obtained relationship between contact time of probes with a target object having a predetermined temperature and tip positions of the probes which vary in accordance with the contact time. The method further includes inspecting one or more chips at a time by estimating the tip positions of the probes based on the relationship and the contact time of the probes with the one or more chips and then correcting the tip positions of the probes from previous tip positions based on the estimated tip positions until the probes are stable without being extended or contracted.

摘要翻译： 检查方法包括将探针的接触时间与具有预定温度的目标物体和探针的尖端位置根据接触时间变化的预先获得的关系进行登记。 该方法还包括基于探头与一个或多个芯片的关系和接触时间估计探头的尖端位置，然后从先前尖端位置校正探头的尖端位置，一次检查一个或多个芯片 基于估计的尖端位置，直到探针稳定而不被延伸或收缩。

公开(公告)号：US20100063247A1

公开(公告)日：2010-03-11

申请号：US12516296

申请日：2006-11-24

申请人： Toshifumi Sanni ,  Hideaki Tanaka ,  Masatoshi Harada

发明人： Toshifumi Sanni ,  Hideaki Tanaka ,  Masatoshi Harada

IPC分类号： C08G79/00

CPC分类号： C08F14/06 ,  C08F8/20 ,  C08F214/06 ,  C08F2/22 ,  C08F2/16

摘要： An object of the present invention is to provide a chlorinated vinyl chloride-based resin with few unstable structures and excellent thermal stability, and a molding article. The chlorinated vinyl chloride-based resin of the invention is an resin in which a chlorine content is 65 wt % or higher, and less than 69 wt %, —CCl2— is in an amount of 6.2 mol % or less, —CHCl— is in an amount of 58.0 mol % or higher, and —CH2— is in an amount of 35.8 mol % or less contained in a molecular structure.

摘要翻译： 本发明的目的是提供几乎不稳定的结构和优异的热稳定性的氯化氯乙烯类树脂和模制品。 本发明的氯化氯乙烯类树脂是氯含量为65重量％以上且小于69重量％的树脂，-CCl 2 - 的含量为6.2摩尔％以下，-CHCl-为 为58.0摩尔％以上，-CH 2 - 为分子结构中所含的35.8摩尔％以下的量。