公开(公告)号：US20070284742A1

公开(公告)日：2007-12-13

申请号：US11741193

申请日：2007-04-27

申请人： Kazunori Inoue ,  Nobuaki Ishiga ,  Kensuke Nagayama ,  Kazumasa Kawase

发明人： Kazunori Inoue ,  Nobuaki Ishiga ,  Kensuke Nagayama ,  Kazumasa Kawase

IPC分类号： H01L23/48

CPC分类号： H01L29/4908 ,  G02F2001/136295 ,  H01L27/124 ,  H01L29/458

摘要： A semiconductor device includes a semiconductor layer, an Al alloy film electrically connected to the semiconductor layer, and a transparent electrode layer directly contacting with the Al alloy film at least over an insulating substrate. The Al alloy film includes one or more kinds of elements selected from Fe, Co and Ni in total of 0.5 to 10 mol %, and a remaining substantially comprises Al.

摘要翻译： 半导体器件包括半导体层，与半导体层电连接的Al合金膜，以及至少在绝缘基板上与Al合金膜直接接触的透明电极层。 Al合金膜包括选自Fe，Co和Ni中的一种或多种元素，总计为0.5至10mol％，其余基本上包含Al。

公开(公告)号：US10716218B2

公开(公告)日：2020-07-14

申请号：US13791655

申请日：2013-03-08

申请人： Masami Hayashi ,  Kenichi Miyamoto ,  Nobuaki Ishiga ,  Kensuke Nagayama ,  Naoki Tsumura

发明人： Masami Hayashi ,  Kenichi Miyamoto ,  Nobuaki Ishiga ,  Kensuke Nagayama ,  Naoki Tsumura

IPC分类号： H05K3/06 ,  G06F3/041 ,  H05K1/09 ,  G06F3/044

摘要： A display device is provided with a laminated wiring including a low-resistance conductive film, a low-reflection film mainly containing Al and functioning as a reflection preventing film, and a cap film which are sequentially laminated on a transparent substrate, and an insulting film formed so as to cover the laminated wiring.

公开(公告)号：US08248564B2

公开(公告)日：2012-08-21

申请号：US12401226

申请日：2009-03-10

申请人： Shingo Nagano ,  Osamu Miyakawa ,  Nobuaki Ishiga

发明人： Shingo Nagano ,  Osamu Miyakawa ,  Nobuaki Ishiga

IPC分类号： G02F1/1343

CPC分类号： G02F1/134363 ,  H01L27/124

摘要： A liquid crystal display device includes a gate line placed above a substrate, a gate insulating layer to cover the gate line, a source line placed above the gate insulating layer, an interlayer insulating layer to cover the source line, a comb-shaped or slit-shaped pixel electrode electrically connected a drain electrode of a TFT through a contact hole penetrating the interlayer insulating layer, a first counter electrode placed below and opposite to the pixel electrode with an insulating layer interposed therebetween to generate an oblique electric field with the pixel electrode, and a second counter electrode formed in the same layer as the pixel electrode and placed overlapping the source line in a given area to generate an in-plane electric field with the pixel electrode.

摘要翻译： 液晶显示装置包括位于基板上方的栅极线，覆盖栅极线的栅极绝缘层，栅极绝缘层上方的源极线，覆盖源极线的层间绝缘层，梳状或狭缝 形状的像素电极通过穿过层间绝缘层的接触孔电连接TFT的漏电极，第一对置电极放置在像素电极的下方并与其相对的绝缘层上，以产生与像素电极 以及形成在与像素电极相同的层中并且在给定区域中与源极重叠的第二对电极以与像素电极产生面内电场。

公开(公告)号：US20120112194A1

公开(公告)日：2012-05-10

申请号：US13232251

申请日：2011-09-14

申请人： Takeshi Ono ,  Naoki Nakagawa ,  Yusuke Yamagata ,  Kazunori Inoue ,  Nobuaki Ishiga ,  Kensuke Nagayama ,  Naoki Tsumura ,  Toru Takeguchi

发明人： Takeshi Ono ,  Naoki Nakagawa ,  Yusuke Yamagata ,  Kazunori Inoue ,  Nobuaki Ishiga ,  Kensuke Nagayama ,  Naoki Tsumura ,  Toru Takeguchi

IPC分类号： H01L33/08

CPC分类号： H01L29/458 ,  H01L29/42384 ,  H01L29/66765

摘要： It is an object to provide a technique to improve electric characteristics after a high-temperature treatment even when a high melting point metal barrier layer is not formed. A semiconductor device includes a gate electrode formed on a transparent insulation substrate, a semiconductor layer having a Si semiconductor active film and an ohmic low resistance Si film having an n-type conductivity, being formed in this order on the gate electrode with a gate insulation film interposed between the gate electrode and the semiconductor layer, and the source and drain electrodes directly connected to the semiconductor layer and containing at least aluminum (Al). At least nitrogen (N) is contained in a first region that is in the vicinity of an interface between a side surface of the SI semiconductor active film and the source and drain electrodes.

摘要翻译： 本发明的目的是提供一种即使在没有形成高熔点金属阻挡层的情况下也可以改善高温处理后的电特性的技术。 半导体器件包括形成在透明绝缘基板上的栅极电极，具有Si半导体活性膜的半导体层和具有n型导电性的欧姆低电阻Si膜依次形成在具有栅绝缘层的栅电极上 插入在栅电极和半导体层之间的膜，以及直接连接到半导体层并且至少包含铝（Al）的源极和漏极。 在SI半导体活性膜的侧面与源电极和漏极之间的界面附近的第一区域中至少含有氮（N）。

公开(公告)号：US20090195151A1

公开(公告)日：2009-08-06

申请号：US12358744

申请日：2009-01-23

申请人： Kensuke Nagayama ,  Kazunori Inoue ,  Nobuaki Ishiga

发明人： Kensuke Nagayama ,  Kazunori Inoue ,  Nobuaki Ishiga

IPC分类号： H01J1/62 ,  C23C14/06

CPC分类号： H01L51/105 ,  H01L27/3244 ,  H01L51/5218 ,  H01L2251/308

摘要： An organic electroluminescence type display apparatus according to an aspect of the present invention includes: a thin film transistor formed on an insulating substrate; and an organic EL device connected to the thin film transistor and including at least an anode, an electroluminescence layer, and a cathode stacked on each other in this order. The anode includes: an Al alloy film having conductivity and including at least one kind of Group 8 3d transition metals, and oxygen, the at least one kind of the Group 8 3d transition metals and the oxygen being added to aluminum; and an amorphous ITO film formed on the Al alloy film.

摘要翻译： 根据本发明的一个方面的有机电致发光型显示装置包括：形成在绝缘基板上的薄膜晶体管; 以及连接到薄膜晶体管并且至少包括依次堆叠的阳极，电致发光层和阴极的有机EL器件。 阳极包括：具有导电性且包括至少一种第8族3d过渡金属的Al合金膜和氧，所述至少一种第8族3d过渡金属和氧被添加到铝中; 以及在Al合金膜上形成的非晶ITO膜。

公开(公告)号：US20090108264A1

公开(公告)日：2009-04-30

申请号：US12262612

申请日：2008-10-31

申请人： Kazunori Inoue ,  Masami Hayashi ,  Nobuaki Ishiga

发明人： Kazunori Inoue ,  Masami Hayashi ,  Nobuaki Ishiga

IPC分类号： H01L21/77 ,  H01L27/088 ,  C23C16/513 ,  B32B15/04 ,  B32B9/00 ,  C23C14/34 ,  H01B13/06

CPC分类号： C23C28/00 ,  C23C26/00 ,  C23C28/04 ,  C23C28/321 ,  C23C28/345 ,  G02F2001/136295 ,  H01L27/12 ,  H01L27/124 ,  Y10T428/31678

摘要： The present invention provides a laminated conductive film, comprising a transparent conductive film and Al-based film, that is capable of realizing a high-quality film with superior electro-optical properties, without providing a buffer layer or protective layer. A laminated conductive film according to one aspect of the present invention is provided with a transparent conductive film having optical transmissivity, and a metal conductive film laminated directly on the transparent conductive film and electrically connected to the transparent conductive film. The metal conductive film is made of Al or has Al as a main component thereof and contains at least one of nitrogen atom and oxygen atom at least in the vicinity of the interface with the transparent conductive film.

摘要翻译： 本发明提供一种层叠导电膜，其包括透明导电膜和Al基膜，其能够实现具有优异电光特性的高质量膜，而不提供缓冲层或保护层。 根据本发明的一个方面的层压导电膜设置有透光性的透明导电膜，和直接层叠在透明导电膜上并与透明导电膜电连接的金属导电膜。 金属导电膜由Al制成或以Al为主要成分，至少在与透明导电膜的界面附近含有氮原子和氧原子中的至少一个。

公开(公告)号：US20060261335A1

公开(公告)日：2006-11-23

申请号：US11360589

申请日：2006-02-24

申请人： Tadaki Nakahori ,  Yuusuke Uchida ,  Kensuke Nagayama ,  Nobuaki Ishiga

发明人： Tadaki Nakahori ,  Yuusuke Uchida ,  Kensuke Nagayama ,  Nobuaki Ishiga

IPC分类号： H01L29/04

CPC分类号： G02F1/136227 ,  G02F1/133555 ,  G02F1/13439 ,  H01L27/14621

摘要： An object of the present invention is to provide a liquid crystal display device that is capable of preventing anomalous growth of a protective insulating film when the protective insulating film is formed to cover a conductive film that was formed by patterning an amorphous conductive film into given shape with a certain etchant. A liquid crystal display device according to an example of the present invention includes a glass substrate having a thin film transistor formed on its upper surface, a color filter substrate having an opposing electrode formed on its upper surface, and a liquid crystal sandwiched between the glass substrate and the color filter substrate. A pixel electrode is connected to the drain electrode of a thin film transistor. Also, the pixel electrode is covered by a protective insulating film having transparency. The pixel electrode contains an oxide compound containing In and Zn.

摘要翻译： 本发明的目的是提供一种液晶显示装置，其能够防止当形成保护绝缘膜以覆盖通过将非晶导电膜图案化为给定形状而形成的导电膜时的保护绝缘膜的异常生长 有一定的蚀刻剂。 根据本发明的实施例的液晶显示装置包括：玻璃基板，其上表面形成有薄膜晶体管;滤色器基板，其上表面形成有相对的电极;夹在玻璃板之间的液晶 基板和滤色器基板。 像素电极连接到薄膜晶体管的漏电极。 此外，像素电极被具有透明性的保护绝缘膜覆盖。 像素电极含有含有In和Zn的氧化物。

公开(公告)号：US08546804B2

公开(公告)日：2013-10-01

申请号：US13232251

申请日：2011-09-14

申请人： Takeshi Ono ,  Naoki Nakagawa ,  Yusuke Yamagata ,  Kazunori Inoue ,  Nobuaki Ishiga ,  Kensuke Nagayama ,  Naoki Tsumura ,  Toru Takeguchi

发明人： Takeshi Ono ,  Naoki Nakagawa ,  Yusuke Yamagata ,  Kazunori Inoue ,  Nobuaki Ishiga ,  Kensuke Nagayama ,  Naoki Tsumura ,  Toru Takeguchi

IPC分类号： H01L29/04 ,  H01L29/10 ,  H01L31/00 ,  G02F1/136

CPC分类号： H01L29/458 ,  H01L29/42384 ,  H01L29/66765

摘要： It is an object to provide a technique to improve electric characteristics after a high-temperature treatment even when a high melting point metal barrier layer is not formed. A semiconductor device includes a gate electrode formed on a transparent insulation substrate, a semiconductor layer having a Si semiconductor active film and an ohmic low resistance Si film having an n-type conductivity, being formed in this order on the gate electrode with a gate insulation film interposed between the gate electrode and the semiconductor layer, and the source and drain electrodes directly connected to the semiconductor layer and containing at least aluminum (Al). At least nitrogen (N) is contained in a first region that is in the vicinity of an interface between a side surface of the SI semiconductor active film and the source and drain electrodes.

摘要翻译： 本发明的目的是提供一种即使在没有形成高熔点金属阻挡层的情况下也可以改善高温处理后的电特性的技术。 半导体器件包括形成在透明绝缘基板上的栅极电极，具有Si半导体活性膜的半导体层和具有n型导电性的欧姆低电阻Si膜依次形成在具有栅绝缘层的栅电极上 插入在栅电极和半导体层之间的膜，以及直接连接到半导体层并且至少包含铝（Al）的源极和漏极。 在SI半导体活性膜的侧面与源电极和漏极之间的界面附近的第一区域中至少含有氮（N）。

公开(公告)号：US20100078816A1

公开(公告)日：2010-04-01

申请号：US12523550

申请日：2008-02-04

申请人： Takumi Nakahata ,  Kazunori Inoue ,  Koji Oda ,  Naoki Nakagawa ,  Nobuaki Ishiga

发明人： Takumi Nakahata ,  Kazunori Inoue ,  Koji Oda ,  Naoki Nakagawa ,  Nobuaki Ishiga

IPC分类号： H01L23/532 ,  H01L21/283

CPC分类号： G02F1/13439 ,  G02F1/133555 ,  G02F1/136227 ,  G02F2001/136295 ,  G02F2201/40 ,  G02F2202/06 ,  H01L27/124 ,  H01L29/458

摘要： A display device includes a metal conductive layer formed on a substrate, a transparent electrode film formed on the substrate and joined to the metal conductive layer and an interlayer insulating film isolating the metal conductive layer and the transparent conductive film. The metal conductive layer has a lower aluminum layer made of aluminum or aluminum alloy, an intermediate impurity containing layer made of aluminum or aluminum alloy containing impurities and formed on a substantially entire upper surface of the lower aluminum layer and an upper aluminum layer made of aluminum or aluminum alloy and formed on the intermediate impurity containing layer. In the interlayer insulating film and the upper aluminum layer, a contact hole penetrates therethrough and locally exposes the intermediate impurity containing layer, and the transparent electrode film is joined to the metal conductive layer in the intermediate impurity containing layer exposed from the contact hole.

摘要翻译： 显示装置包括形成在基板上的金属导电层，形成在基板上并与金属导电层接合的透明电极膜和隔离金属导电层和透明导电膜的层间绝缘膜。 金属导电层具有由铝或铝合金制成的较低铝层，由含有杂质的铝或铝合金制成的中间杂质含有层，形成在下铝层的大致整个上表面上，铝层由铝制成 或铝合金，并形成在中间杂质含有层上。 在层间绝缘膜和上部铝层中，接触孔穿过其中并局部暴露中间杂质含有层，并且透明电极膜与从接触孔露出的中间杂质含有层中的金属导电层接合。

公开(公告)号：US20090065942A1

公开(公告)日：2009-03-12

申请号：US12206187

申请日：2008-09-08

申请人： Kazunori INOUE ,  Nobuaki Ishiga ,  Kensuke Nagayama ,  Naoki Tsumura ,  Takumi Nakahata ,  Kazumasa Kawase

发明人： Kazunori INOUE ,  Nobuaki Ishiga ,  Kensuke Nagayama ,  Naoki Tsumura ,  Takumi Nakahata ,  Kazumasa Kawase

IPC分类号： H01L23/52 ,  H01L21/44

CPC分类号： H01L21/2855 ,  H01L23/53223 ,  H01L27/124 ,  H01L29/458 ,  H01L29/4908 ,  H01L2924/0002 ,  H01L2924/00

摘要： A semiconductor device includes a film containing silicon as the main ingredient, and an aluminum alloy film, such as a source electrode and a drain electrode, that is directly connected to the film containing silicon as the main ingredient, such as an ohmic low-resistance Si film, and contains at least Al, Ni, and N in the vicinity of the bonding interface. The Aluminum alloy film has a good contact characteristic when directly connected to the film containing silicon as the main ingredient without having a barrier layer formed of high melting point metal.

摘要翻译： 半导体器件包括以硅为主要成分的膜，以及与以硅为主要成分的膜直接连接的诸如源电极和漏电极的铝合金膜，例如欧姆低电阻 Si膜，并且在接合界面附近至少含有Al，Ni和N。 当直接连接到含硅作为主要成分的膜而不具有由高熔点金属形成的阻挡层时，铝合金膜具有良好的接触特性。