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1.发明授权Semiconductor device including a region containing nitrogen at an interface and display device 有权半导体器件包括界面处含有氮的区域和显示装置公开(公告)号：US08546804B2
公开(公告)日：2013-10-01
申请号：US13232251
申请日：2011-09-14
申请人： Takeshi Ono , Naoki Nakagawa , Yusuke Yamagata , Kazunori Inoue , Nobuaki Ishiga , Kensuke Nagayama , Naoki Tsumura , Toru Takeguchi
发明人： Takeshi Ono , Naoki Nakagawa , Yusuke Yamagata , Kazunori Inoue , Nobuaki Ishiga , Kensuke Nagayama , Naoki Tsumura , Toru Takeguchi
CPC分类号： H01L29/458 , H01L29/42384 , H01L29/66765
摘要： It is an object to provide a technique to improve electric characteristics after a high-temperature treatment even when a high melting point metal barrier layer is not formed. A semiconductor device includes a gate electrode formed on a transparent insulation substrate, a semiconductor layer having a Si semiconductor active film and an ohmic low resistance Si film having an n-type conductivity, being formed in this order on the gate electrode with a gate insulation film interposed between the gate electrode and the semiconductor layer, and the source and drain electrodes directly connected to the semiconductor layer and containing at least aluminum (Al). At least nitrogen (N) is contained in a first region that is in the vicinity of an interface between a side surface of the SI semiconductor active film and the source and drain electrodes.
摘要翻译： 本发明的目的是提供一种即使在没有形成高熔点金属阻挡层的情况下也可以改善高温处理后的电特性的技术。 半导体器件包括形成在透明绝缘基板上的栅极电极，具有Si半导体活性膜的半导体层和具有n型导电性的欧姆低电阻Si膜依次形成在具有栅绝缘层的栅电极上 插入在栅电极和半导体层之间的膜，以及直接连接到半导体层并且至少包含铝（Al）的源极和漏极。 在SI半导体活性膜的侧面与源电极和漏极之间的界面附近的第一区域中至少含有氮（N）。
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公开(公告)号：US20120112194A1
公开(公告)日：2012-05-10
申请号：US13232251
申请日：2011-09-14
申请人： Takeshi Ono , Naoki Nakagawa , Yusuke Yamagata , Kazunori Inoue , Nobuaki Ishiga , Kensuke Nagayama , Naoki Tsumura , Toru Takeguchi
发明人： Takeshi Ono , Naoki Nakagawa , Yusuke Yamagata , Kazunori Inoue , Nobuaki Ishiga , Kensuke Nagayama , Naoki Tsumura , Toru Takeguchi
IPC分类号： H01L33/08
CPC分类号： H01L29/458 , H01L29/42384 , H01L29/66765
摘要： It is an object to provide a technique to improve electric characteristics after a high-temperature treatment even when a high melting point metal barrier layer is not formed. A semiconductor device includes a gate electrode formed on a transparent insulation substrate, a semiconductor layer having a Si semiconductor active film and an ohmic low resistance Si film having an n-type conductivity, being formed in this order on the gate electrode with a gate insulation film interposed between the gate electrode and the semiconductor layer, and the source and drain electrodes directly connected to the semiconductor layer and containing at least aluminum (Al). At least nitrogen (N) is contained in a first region that is in the vicinity of an interface between a side surface of the SI semiconductor active film and the source and drain electrodes.
摘要翻译： 本发明的目的是提供一种即使在没有形成高熔点金属阻挡层的情况下也可以改善高温处理后的电特性的技术。 半导体器件包括形成在透明绝缘基板上的栅极电极，具有Si半导体活性膜的半导体层和具有n型导电性的欧姆低电阻Si膜依次形成在具有栅绝缘层的栅电极上 插入在栅电极和半导体层之间的膜，以及直接连接到半导体层并且至少包含铝（Al）的源极和漏极。 在SI半导体活性膜的侧面与源电极和漏极之间的界面附近的第一区域中至少含有氮（N）。
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公开(公告)号：US08159749B2
公开(公告)日：2012-04-17
申请号：US12545217
申请日：2009-08-21
申请人： Kazunori Inoue , Naoki Tsumura , Nobuaki Ishiga , Takeshi Ono , Naoki Nakagawa , Masafumi Agari , Yusuke Yamagata , Kensuke Nagayama
发明人： Kazunori Inoue , Naoki Tsumura , Nobuaki Ishiga , Takeshi Ono , Naoki Nakagawa , Masafumi Agari , Yusuke Yamagata , Kensuke Nagayama
IPC分类号： G02B5/28 , G02F1/1335
CPC分类号： G02B1/116 , C08K3/08 , C09D1/00 , C09D7/61 , C23C14/0036 , C23C14/0641 , C23C14/18 , G02F1/133502 , Y10T428/265
摘要： An antireflection coating is formed on a transparent substrate and includes an Al film having a transmittance of lower than 10% at a wavelength of 550 nm with a thickness of 25 nm and predominantly composed of aluminum (Al), and an Al—N film formed in at least one of an upper layer and a lower layer of the Al film, having a transmittance of equal to or higher than 10% at a wavelength of 550 nm with a thickness of 25 nm, predominantly composed of Al and at least containing a nitrogen (N) element as an additive. A specific resistance of the antireflection coating is equal to or lower than 1.0×10−2 O·cm, and a reflectance of a surface of the Al—N film is equal to or lower than 50% in a visible light region.
摘要翻译： 在透明基板上形成防反射膜，在550nm波长下透射率低于10％的Al膜，厚度为25nm，主要由铝（Al）构成，形成Al-N膜 在Al膜的上层和下层中的至少一层中，在550nm的波长下具有等于或高于10％的透射率，厚度为25nm，主要由Al组成并且至少含有 氮（N）元素作为添加剂。 抗反射涂层的电阻率为1.0×10 -2 O·cm以下，Al-N膜的表面的可反射率在可见光区域为50％以下。
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4.发明申请TRANSPARENT CONDUCTIVE FILM, SEMICONDUCTOR DEVICE AND ACTIVE MATRIX DISPLAY UNIT 有权透明导电膜，半导体器件和主动矩阵显示单元公开(公告)号：US20080012016A1
公开(公告)日：2008-01-17
申请号：US11767217
申请日：2007-06-22
CPC分类号： H01J29/28 , G02F1/13439 , G02F1/13458 , H01L27/3244 , H01L51/5206 , H01L51/5218 , H01L51/5234 , H01L2227/323
摘要： A transparent conductive film substantially made from In2O3, SnO2 and ZnO, having a molar ratio In/(In+Sn+Zn) of 0.65 to 0.8 and also a molar ratio Sn/Zn of 1 or less: The transparent conductive film has a favorable electric contact property with an electrode or line made from Al or Al alloy film. Further, a semiconductor device having an electrode or line made from the transparent conductive film has high reliability and productivity.
摘要翻译： 基本上由In 2 N 3 O 3，SnO 2和ZnO组成的透明导电膜，其具有In /（In + Sn + Zn ）为0.65〜0.8，Sn / Zn的摩尔比为1以下：透明导电膜与由Al或Al合金膜形成的电极或线具有良好的电接触性。 此外，具有由透明导电膜制成的电极或线的半导体器件具有高的可靠性和生产率。
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公开(公告)号：US20060192481A1
公开(公告)日：2006-08-31
申请号：US11299906
申请日：2005-12-13
CPC分类号： H01L51/5218 , H01L27/3244 , H01L51/5271 , H01L2251/5315
摘要： An organic electroluminescence type display apparatus of top emission type, in which a thin film transistor (TFT), a flattening film made of organic resin and an organic EL element, in which at least an anode, an electroluminescence layer and a cathode are laminated on the flattening film in this order, are formed in each picture element in a display region on a substrate. The anode is composed of at least two layer film including an aluminum (Al) alloy film containing as a impurity at least one of transition metals of the eighth group of 3d into Al and including a light transmitting conductive oxide film laminated on the Al alloy film.
摘要翻译： 一种顶发光型有机电致发光型显示装置，其中薄膜晶体管（TFT），由有机树脂制成的平坦化膜和有机EL元件，其中至少阳极，电致发光层和阴极层压在 平坦化膜依次形成在基板上的显示区域中的每个像素中。 阳极由至少两层膜组成，该层包括铝（Al）合金膜，其含有第八组3d的过渡金属作为杂质作为杂质，并且包含层叠在Al合金膜上的透光性导电氧化膜 。
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6.发明申请SEMICONDUCTOR DEVICE, DISPLAY DEVICE, AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE 有权半导体器件，显示器件及制造半导体器件的方法公开(公告)号：US20090065942A1
公开(公告)日：2009-03-12
申请号：US12206187
申请日：2008-09-08
申请人： Kazunori INOUE , Nobuaki Ishiga , Kensuke Nagayama , Naoki Tsumura , Takumi Nakahata , Kazumasa Kawase
发明人： Kazunori INOUE , Nobuaki Ishiga , Kensuke Nagayama , Naoki Tsumura , Takumi Nakahata , Kazumasa Kawase
CPC分类号： H01L21/2855 , H01L23/53223 , H01L27/124 , H01L29/458 , H01L29/4908 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor device includes a film containing silicon as the main ingredient, and an aluminum alloy film, such as a source electrode and a drain electrode, that is directly connected to the film containing silicon as the main ingredient, such as an ohmic low-resistance Si film, and contains at least Al, Ni, and N in the vicinity of the bonding interface. The Aluminum alloy film has a good contact characteristic when directly connected to the film containing silicon as the main ingredient without having a barrier layer formed of high melting point metal.
摘要翻译： 半导体器件包括以硅为主要成分的膜，以及与以硅为主要成分的膜直接连接的诸如源电极和漏电极的铝合金膜，例如欧姆低电阻 Si膜，并且在接合界面附近至少含有Al，Ni和N。 当直接连接到含硅作为主要成分的膜而不具有由高熔点金属形成的阻挡层时，铝合金膜具有良好的接触特性。
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7.发明授权Transparent conductive film, semiconductor device and active matrix display unit 有权透明导电膜，半导体器件和有源矩阵显示单元公开(公告)号：US07420215B2
公开(公告)日：2008-09-02
申请号：US11767217
申请日：2007-06-22
IPC分类号： H01L29/04 , H01L29/15 , H01L31/036 , H01L29/10 , H01L31/0376 , H01L31/20 , H01L31/00 , H01L23/48 , H01L23/52 , H01L29/40
CPC分类号： H01J29/28 , G02F1/13439 , G02F1/13458 , H01L27/3244 , H01L51/5206 , H01L51/5218 , H01L51/5234 , H01L2227/323
摘要： A transparent conductive film substantially made from In2O3, SnO2 and ZnO, having a molar ratio In/(In+Sn+Zn) of 0.65 to 0.8 and also a molar ratio Sn/Zn of 1 or less: The transparent conductive film has a favorable electric contact property with an electrode or line made from Al or Al alloy film. Further, a semiconductor device having an electrode or line made from the transparent conductive film has high reliability and productivity.
摘要翻译： 基本上由In 2 N 3 O 3，SnO 2和ZnO组成的透明导电膜，其具有In /（In + Sn + Zn ）为0.65〜0.8，Sn / Zn的摩尔比为1以下：透明导电膜与由Al或Al合金膜形成的电极或线具有良好的电接触性。 此外，具有由透明导电膜制成的电极或线的半导体器件具有高的可靠性和生产率。
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8.发明授权Semiconductor device, display device, and method of manufacturing semiconductor device 有权半导体装置，显示装置以及半导体装置的制造方法公开(公告)号：US07825515B2
公开(公告)日：2010-11-02
申请号：US12206187
申请日：2008-09-08
申请人： Kazunori Inoue , Nobuaki Ishiga , Kensuke Nagayama , Naoki Tsumura , Takumi Nakahata , Kazumasa Kawase
发明人： Kazunori Inoue , Nobuaki Ishiga , Kensuke Nagayama , Naoki Tsumura , Takumi Nakahata , Kazumasa Kawase
IPC分类号： H01L23/48
CPC分类号： H01L21/2855 , H01L23/53223 , H01L27/124 , H01L29/458 , H01L29/4908 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor device includes a film containing silicon as the main ingredient, and an aluminum alloy film, such as a source electrode and a drain electrode, that is directly connected to the film containing silicon as the main ingredient, such as an ohmic low-resistance Si film, and contains at least Al, Ni, and N in the vicinity of the bonding interface. The Aluminum alloy film has a good contact characteristic when directly connected to the film containing silicon as the main ingredient without having a barrier layer formed of high melting point metal.
摘要翻译： 半导体器件包括以硅为主要成分的膜，以及与以硅为主要成分的膜直接连接的源极，漏电极等铝合金膜，例如欧姆低电阻 Si膜，并且在接合界面附近至少含有Al，Ni和N。 当直接连接到含硅作为主要成分的膜而不具有由高熔点金属形成的阻挡层时，铝合金膜具有良好的接触特性。
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9.发明授权A1 alloy film, electronic device, and active matrix substrate for use in electrooptic display device 有权A1合金膜，电子器件和用于电光显示器件的有源矩阵基板公开(公告)号：US08558248B2
公开(公告)日：2013-10-15
申请号：US12234371
申请日：2008-09-19
IPC分类号： H01L33/00
CPC分类号： H01L23/53219 , G02F2001/136295 , H01L27/12 , H01L27/124 , H01L29/458 , H01L2924/0002 , H01L2924/12044 , Y10T428/12438 , H01L2924/00
摘要： In accordance with one aspect of the present invention, an Al alloy film contains a first additive element composed of Ni, and at least one type of second additive element selected from the group consisting of Group 2A alkaline earth metals and Groups 3B and 4B metalloids in Period 2 or 3 of the periodic table of the elements. Furthermore, the composition ratio of the first additive element is 0.5-5 at %, and the composition ratio of the second additive element is 0.1-3 at %.
摘要翻译： 根据本发明的一个方面，Al合金膜含有由Ni组成的第一添加元素，以及选自2A族碱土金属和3B族和4B族金属中的至少一种第二添加元素 元素周期表的周期2或3。 此外，第一添加元素的组成比为0.5〜5原子％，第二添加元素的组成比为0.1〜3原子％。
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公开(公告)号：US10716218B2
公开(公告)日：2020-07-14
申请号：US13791655
申请日：2013-03-08
摘要： A display device is provided with a laminated wiring including a low-resistance conductive film, a low-reflection film mainly containing Al and functioning as a reflection preventing film, and a cap film which are sequentially laminated on a transparent substrate, and an insulting film formed so as to cover the laminated wiring.
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