公开(公告)号：US20080198288A1

公开(公告)日：2008-08-21

申请号：US11951045

申请日：2007-12-05

Applicant: Tadaki NAKAHORI ,  Hatsumi Kimura ,  Fumihiro Goto ,  Toshio Araki

Inventor： Tadaki NAKAHORI ,  Hatsumi Kimura ,  Fumihiro Goto ,  Toshio Araki

IPC: G02F1/136 ,  H01L21/04

CPC classification number: H01L29/0657 ,  G02F1/1368 ,  H01L27/124 ,  H01L29/78633

Abstract: According to an aspect of the present invention, there is provided a liquid crystal display that includes a gate electrode and line formed on a transparent insulating substrate, a gate insulating film covering the gate electrode and line, a semiconductor layer formed on the gate insulating film, a source electrode, a source line, and a drain electrode formed on the semiconductor layer, and a pixel electrode connected to the drain electrode. The semiconductor layer is integrally formed of three portions which are a crossover portion of the source line and the drain line, a TFT portion, and a connecting portion connecting the crossover portion to the TFT portion. A part of the crossover portion on the connecting portion side and the whole connecting portion are covered by the source electrode and the source line.

Abstract translation: 根据本发明的一个方面，提供了一种液晶显示器，其包括形成在透明绝缘基板上的栅电极和线，覆盖栅电极和线的栅极绝缘膜，形成在栅极绝缘膜上的半导体层 形成在半导体层上的源电极，源极线和漏电极以及连接到漏电极的像素电极。 半导体层由作为源极线和漏极线的交叉部分的三个部分，TFT部分和将交叉部分连接到TFT部分的连接部分整体形成。 连接部分侧的交叉部分和整个连接部分的一部分被源电极和源极线覆盖。

公开(公告)号：US07352421B2

公开(公告)日：2008-04-01

申请号：US11364195

申请日：2006-03-01

Applicant: Tadaki Nakahori ,  Nobuaki Ishiga ,  Kensuke Nagayama ,  Takuji Yoshida

Inventor： Tadaki Nakahori ,  Nobuaki Ishiga ,  Kensuke Nagayama ,  Takuji Yoshida

IPC: G02F1/1335

CPC classification number: G02F1/133555 ,  G02F1/133371 ,  G02F1/136227

Abstract: A liquid crystal apparatus includes a TFT array substrate which includes gate wirings having a gate electrode, source wirings having a source electrode, a thin film transistor having the gate electrode, a semiconductor layer, the source electrode, and a drain electrode, an interlayer insulating film provided above the thin film transistor and the gate and source wirings, a transparent pixel electrode having a first transparent conductive film connected to the drain electrode through a contact hole, and put into contact with a surface of a insulating substrate through a pixel opening provided in a gate insulating film and the interlayer insulating film, a reflective pixel electrode made of an Al-alloy connected to the drain electrode, and a second transparent conductive film formed on the reflective electrode. The second transparent conductive film has a same pattern shape as the reflective pixel electrode and a thickness thereof is at least 5 nm.

Abstract translation: 液晶装置包括TFT阵列基板，其包括具有栅电极的栅极布线，具有源电极的源极布线，具有栅电极的薄膜晶体管，半导体层，源电极和漏电极，层间绝缘 设置在薄膜晶体管上方的薄膜晶体管和栅极和源极布线的透明像素电极，具有通过接触孔连接到漏极的第一透明导电膜的透明像素电极，并通过设置在像素开口处的像素开口与绝缘基板的表面接触 在栅极绝缘膜和层间绝缘膜中，由连接到漏电极的Al合金制成的反射像素电极和形成在反射电极上的第二透明导电膜。 第二透明导电膜具有与反射像素电极相同的图案形状，并且其厚度为至少5nm。

公开(公告)号：US20080138921A1

公开(公告)日：2008-06-12

申请号：US12029281

申请日：2008-02-11

Applicant: Tadaki Nakahori ,  Nobuaki Ishiga ,  Kensuke Nagayama ,  Takuji Yoshida

Inventor： Tadaki Nakahori ,  Nobuaki Ishiga ,  Kensuke Nagayama ,  Takuji Yoshida

IPC: G02F1/13

CPC classification number: G02F1/133555 ,  G02F1/133371 ,  G02F1/136227

Abstract: A liquid crystal apparatus includes a TFT array substrate which includes gate wirings having a gate electrode, source wirings having a source electrode, a thin film transistor having the gate electrode, a semiconductor layer, the source electrode, and a drain electrode, an interlayer insulating film provided above the thin film transistor and the gate and source wirings, a transparent pixel electrode having a first transparent conductive film connected to the drain electrode through a contact hole, and put into contact with a surface of a insulating substrate through a pixel opening provided in a gate insulating film and the interlayer insulating film, a reflective pixel electrode made of an Al-alloy connected to the drain electrode, and a second transparent conductive film formed on the reflective electrode. The second transparent conductive film has a same pattern shape as the reflective pixel electrode and a thickness thereof is at least 5 nm.

Abstract translation: 液晶装置包括TFT阵列基板，其包括具有栅电极的栅极布线，具有源电极的源极布线，具有栅电极的薄膜晶体管，半导体层，源电极和漏电极，层间绝缘 设置在薄膜晶体管上方的薄膜晶体管和栅极和源极布线的透明像素电极，具有通过接触孔连接到漏极的第一透明导电膜的透明像素电极，并通过设置在像素开口处的像素开口与绝缘基板的表面接触 在栅极绝缘膜和层间绝缘膜中，由连接到漏电极的Al合金制成的反射像素电极和形成在反射电极上的第二透明导电膜。 第二透明导电膜具有与反射像素电极相同的图案形状，并且其厚度为至少5nm。

公开(公告)号：US20060261335A1

公开(公告)日：2006-11-23

申请号：US11360589

申请日：2006-02-24

Applicant: Tadaki Nakahori ,  Yuusuke Uchida ,  Kensuke Nagayama ,  Nobuaki Ishiga

Inventor： Tadaki Nakahori ,  Yuusuke Uchida ,  Kensuke Nagayama ,  Nobuaki Ishiga

IPC: H01L29/04

CPC classification number: G02F1/136227 ,  G02F1/133555 ,  G02F1/13439 ,  H01L27/14621

Abstract: An object of the present invention is to provide a liquid crystal display device that is capable of preventing anomalous growth of a protective insulating film when the protective insulating film is formed to cover a conductive film that was formed by patterning an amorphous conductive film into given shape with a certain etchant. A liquid crystal display device according to an example of the present invention includes a glass substrate having a thin film transistor formed on its upper surface, a color filter substrate having an opposing electrode formed on its upper surface, and a liquid crystal sandwiched between the glass substrate and the color filter substrate. A pixel electrode is connected to the drain electrode of a thin film transistor. Also, the pixel electrode is covered by a protective insulating film having transparency. The pixel electrode contains an oxide compound containing In and Zn.

Abstract translation: 本发明的目的是提供一种液晶显示装置，其能够防止当形成保护绝缘膜以覆盖通过将非晶导电膜图案化为给定形状而形成的导电膜时的保护绝缘膜的异常生长 有一定的蚀刻剂。 根据本发明的实施例的液晶显示装置包括：玻璃基板，其上表面形成有薄膜晶体管;滤色器基板，其上表面形成有相对的电极;夹在玻璃板之间的液晶 基板和滤色器基板。 像素电极连接到薄膜晶体管的漏电极。 此外，像素电极被具有透明性的保护绝缘膜覆盖。 像素电极含有含有In和Zn的氧化物。

公开(公告)号：US06236062B1

公开(公告)日：2001-05-22

申请号：US09166175

申请日：1998-10-05

Applicant: Tadaki Nakahori ,  Tetsuya Sakoguchi ,  Kazuhiko Noguchi ,  Kouji Yabushita ,  Takeshi Kubota

Inventor： Tadaki Nakahori ,  Tetsuya Sakoguchi ,  Kazuhiko Noguchi ,  Kouji Yabushita ,  Takeshi Kubota

IPC: H01L2900

CPC classification number: H01L29/66765 ,  G02F1/1368 ,  H01L29/78669

Abstract: A manufacturing process OF a thin film transistor is provided, in which occurrence of a dry spot and occurrence of an etch residue of an ohmic contact layer (n+ a-Si:H film) due to the dry spot are prevented in photoengraving process for patterning a semiconductor layer and the ohmic contact layer into an island, without any further treatment by any other apparatus. After forming the a-Si:H film 4a which forms the semiconductor layer of the TFT and the n+ a-Si:H film 5a which forms the ohmic contact layer, a N2 gas plasma discharge is continuously performed using the same plasma CVD apparatus, thereby forming a very thin silicon nitride film 6 having a hydrophilic property on a surface layer of the n+ a-Si:H film 5a.

Abstract translation: 提供了一种薄膜晶体管的制造方法，其中在光刻图案中防止干斑的发生和由于干斑引起的欧姆接触层（n + a-Si：H膜）的蚀刻残留物的出现 半导体层和欧姆接触层进入岛，而不用任何其他设备进一步处理。形成形成TFT的半导体层的a-Si：H膜4a和n + a-Si：H膜5a之后 形成欧姆接触层，使用相同的等离子体CVD装置连续进行N2气体等离子体放电，从而在n + a-Si：H膜5a的表面层上形成具有亲水性的非常薄的氮化硅膜6。

公开(公告)号：US06190951B1

公开(公告)日：2001-02-20

申请号：US09346725

申请日：1999-07-02

Applicant: Tadaki Nakahori ,  Masakuni Fujiwara ,  Harumi Yasuda

Inventor： Tadaki Nakahori ,  Masakuni Fujiwara ,  Harumi Yasuda

IPC: H01L2200

CPC classification number: H01L29/66765 ,  G02F1/1368 ,  G02F2001/133302 ,  H01L21/28008 ,  H01L21/32134

Abstract: The present invention is directed to method for manufacturing a liquid crystal display apparatus in which a thin film transistor formed by successively depositing on a glass substrate a gate electrode, a gate insulating film, an active layer made of amorphous silicon, a source electrode and a drain electrode is used for driving liquid crystal. The method includes steps of: forming the gate electrode by patterning a gate metal layer coating the glass substrate by a wet etching process using an etchant containing cerium ammonium nitrate; removing an etching reaction product adhering on the substrate by washing it with a hydrofluoric acid solution; and forming the gate insulating film.

Abstract translation: 本发明涉及一种液晶显示装置的制造方法，其中通过在玻璃基板上依次沉积栅电极，栅极绝缘膜，由非晶硅制成的有源层，源极和 漏电极用于驱动液晶。 该方法包括以下步骤：通过使用含有硝酸铈铵的蚀刻剂的湿蚀刻方法图案化涂覆玻璃基板的栅极金属层来形成栅电极; 通过用氢氟酸溶液洗涤去除附着在基材上的蚀刻反应产物; 并形成栅极绝缘膜。

公开(公告)号：US07952670B2

公开(公告)日：2011-05-31

申请号：US11951045

申请日：2007-12-05

Applicant: Tadaki Nakahori ,  Hatsumi Kimura ,  Fumihiro Goto ,  Toshio Araki

Inventor： Tadaki Nakahori ,  Hatsumi Kimura ,  Fumihiro Goto ,  Toshio Araki

IPC: G02F1/136 ,  G02F1/1343 ,  H01L31/00 ,  H01L29/10 ,  H01L29/04 ,  H01L29/15 ,  H01L27/14 ,  H01L31/036

CPC classification number: H01L29/0657 ,  G02F1/1368 ,  H01L27/124 ,  H01L29/78633

Abstract: According to an aspect of the present invention, there is provided a liquid crystal display that includes a gate electrode and line formed on a transparent insulating substrate, a gate insulating film covering the gate electrode and line, a semiconductor layer formed on the gate insulating film, a source electrode, a source line, and a drain electrode formed on the semiconductor layer, and a pixel electrode connected to the drain electrode. The semiconductor layer is integrally formed of three portions which are a crossover portion of the source line and the drain line, a TFT portion, and a connecting portion connecting the crossover portion to the TFT portion. A part of the crossover portion on the connecting portion side and the whole connecting portion are covered by the source electrode and the source line.

Abstract translation: 根据本发明的一个方面，提供了一种液晶显示器，其包括形成在透明绝缘基板上的栅电极和线，覆盖栅电极和线的栅极绝缘膜，形成在栅极绝缘膜上的半导体层 形成在半导体层上的源电极，源极线和漏电极以及连接到漏电极的像素电极。 半导体层由作为源极线和漏极线的交叉部分的三个部分，TFT部分和将交叉部分连接到TFT部分的连接部分整体形成。 连接部分侧的交叉部分和整个连接部分的一部分被源电极和源极线覆盖。

公开(公告)号：US07915062B2

公开(公告)日：2011-03-29

申请号：US11762398

申请日：2007-06-13

Applicant: Shinichi Yano ,  Tadaki Nakahori ,  Nobuaki Ishiga

Inventor： Shinichi Yano ,  Tadaki Nakahori ,  Nobuaki Ishiga

IPC: H01L21/00 ,  H01L21/22

CPC classification number: H01L29/4908 ,  H01L27/12 ,  H01L27/124 ,  H01L29/458

Abstract: A TFT array substrate includes a TFT having an ohmic contact film and a source electrode and a drain electrode formed on the ohmic contact film. It also includes a pixel electrode electrically connected with the drain electrode. The source electrode and the drain electrode are made of an Al alloy containing Ni as an additive.

Abstract translation: TFT阵列基板包括具有欧姆接触膜和形成在欧姆接触膜上的源电极和漏电极的TFT。 它还包括与漏电极电连接的像素电极。 源电极和漏极由含有Ni作为添加剂的Al合金制成。

公开(公告)号：US20070295963A1

公开(公告)日：2007-12-27

申请号：US11762398

申请日：2007-06-13

Applicant: Shinichi YANO ,  Tadaki Nakahori ,  Nobuaki Ishiga

Inventor： Shinichi YANO ,  Tadaki Nakahori ,  Nobuaki Ishiga

IPC: H01L29/04

CPC classification number: H01L29/4908 ,  H01L27/12 ,  H01L27/124 ,  H01L29/458

Abstract: A TFT array substrate includes a TFT having an ohmic contact film and a source electrode and a drain electrode formed on the ohmic contact film. It also includes a pixel electrode electrically connected with the drain electrode. The source electrode and the drain electrode are made of an Al alloy containing Ni as an additive.

Abstract translation: TFT阵列基板包括具有欧姆接触膜和形成在欧姆接触膜上的源电极和漏电极的TFT。 它还包括与漏电极电连接的像素电极。 源电极和漏极由含有Ni作为添加剂的Al合金制成。

公开(公告)号：US20070096098A1

公开(公告)日：2007-05-03

申请号：US11551301

申请日：2006-10-20

Applicant: Nobuaki Ishiga ,  Kensuke Nagayama ,  Kenichi Miyamoto ,  Tadaki Nakahori ,  Kazunori Inoue

Inventor： Nobuaki Ishiga ,  Kensuke Nagayama ,  Kenichi Miyamoto ,  Tadaki Nakahori ,  Kazunori Inoue

IPC: H01L29/04

CPC classification number: H01L29/4908 ,  G02F2001/13629 ,  G02F2001/136295 ,  H01L27/124 ,  H01L29/458

Abstract: A conductive structure includes a laminated structure of an upper layer and a lower layer. The lower layer is formed of an aluminum alloy containing at least one kind of Group 8 elements in periodic table. The upper layer is laminated on the lower layer and formed of an aluminum alloy containing at least one kind of Group 8 elements in periodic table and nitrogen.

Abstract translation: 导电结构包括上层和下层的层叠结构。 下层由在周期表中含有至少一种第8族元素的铝合金形成。 上层层叠在下层上，由含有周期表和氮中的至少一种第8族元素的铝合金形成。