Semiconductor device including a region containing nitrogen at an interface and display device
    1.
    发明授权
    Semiconductor device including a region containing nitrogen at an interface and display device 有权
    半导体器件包括界面处含有氮的区域和显示装置

    公开(公告)号:US08546804B2

    公开(公告)日:2013-10-01

    申请号:US13232251

    申请日:2011-09-14

    摘要: It is an object to provide a technique to improve electric characteristics after a high-temperature treatment even when a high melting point metal barrier layer is not formed. A semiconductor device includes a gate electrode formed on a transparent insulation substrate, a semiconductor layer having a Si semiconductor active film and an ohmic low resistance Si film having an n-type conductivity, being formed in this order on the gate electrode with a gate insulation film interposed between the gate electrode and the semiconductor layer, and the source and drain electrodes directly connected to the semiconductor layer and containing at least aluminum (Al). At least nitrogen (N) is contained in a first region that is in the vicinity of an interface between a side surface of the SI semiconductor active film and the source and drain electrodes.

    摘要翻译: 本发明的目的是提供一种即使在没有形成高熔点金属阻挡层的情况下也可以改善高温处理后的电特性的技术。 半导体器件包括形成在透明绝缘基板上的栅极电极,具有Si半导体活性膜的半导体层和具有n型导电性的欧姆低电阻Si膜依次形成在具有栅绝缘层的栅电极上 插入在栅电极和半导体层之间的膜,以及直接连接到半导体层并且至少包含铝(Al)的源极和漏极。 在SI半导体活性膜的侧面与源电极和漏极之间的界面附近的第一区域中至少含有氮(N)。

    SEMICONDUCTOR DEVICE AND DISPLAY DEVICE
    2.
    发明申请
    SEMICONDUCTOR DEVICE AND DISPLAY DEVICE 有权
    半导体器件和显示器件

    公开(公告)号:US20120112194A1

    公开(公告)日:2012-05-10

    申请号:US13232251

    申请日:2011-09-14

    IPC分类号: H01L33/08

    摘要: It is an object to provide a technique to improve electric characteristics after a high-temperature treatment even when a high melting point metal barrier layer is not formed. A semiconductor device includes a gate electrode formed on a transparent insulation substrate, a semiconductor layer having a Si semiconductor active film and an ohmic low resistance Si film having an n-type conductivity, being formed in this order on the gate electrode with a gate insulation film interposed between the gate electrode and the semiconductor layer, and the source and drain electrodes directly connected to the semiconductor layer and containing at least aluminum (Al). At least nitrogen (N) is contained in a first region that is in the vicinity of an interface between a side surface of the SI semiconductor active film and the source and drain electrodes.

    摘要翻译: 本发明的目的是提供一种即使在没有形成高熔点金属阻挡层的情况下也可以改善高温处理后的电特性的技术。 半导体器件包括形成在透明绝缘基板上的栅极电极,具有Si半导体活性膜的半导体层和具有n型导电性的欧姆低电阻Si膜依次形成在具有栅绝缘层的栅电极上 插入在栅电极和半导体层之间的膜,以及直接连接到半导体层并且至少包含铝(Al)的源极和漏极。 在SI半导体活性膜的侧面与源电极和漏极之间的界面附近的第一区域中至少含有氮(N)。

    Wireless communication system and terminal-device authentication method in wireless communication system
    9.
    发明授权
    Wireless communication system and terminal-device authentication method in wireless communication system 有权
    无线通信系统和无线通信系统中的终端设备认证方法

    公开(公告)号:US09094826B2

    公开(公告)日:2015-07-28

    申请号:US14131008

    申请日:2012-07-09

    申请人: Naoki Tsumura

    发明人: Naoki Tsumura

    摘要: A wireless communication system includes code transmitters (20a, 20b) each configured to transmit a time-varying code; code receivers (30a, 30b) each configured to receive the time-varying codes transmitted from the code transmitters (20a, 20b) and generate a fingerprint based on the received time-varying codes, the fingerprint being unique to a space where the time-varying codes are receivable; and terminal devices (40a, 40b) configured to establish wireless communication connection therebetween with authentication. The terminal devices (40a, 40b) are connected to the code receivers (30a, 30b), respectively. Each terminal device (40a, 40b) includes a fingerprint acquiring unit configured to acquire the fingerprint from the code receiver (30a, 30b), a wireless communication unit configured to transmit and receive the fingerprint via wireless communication, and an authentication unit configured to authenticate another terminal device if the fingerprint received from the another terminal device matches the fingerprint acquired from the code receiver connected thereto.

    摘要翻译: 无线通信系统包括代码发送器(20a,20b),每个代码发送器被配置为发送时变码; 代码接收器(30a,30b),其被配置为接收从代码发送器(20a,20b)发送的时变代码,并且基于所接收的时变码生成指纹,所述指纹对于时间 - 不同的代码可以接收; 以及终端设备(40a,40b),被配置为在认证之间建立无线通信连接。 终端设备(40a,40b)分别连接到代码接收器(30a,30b)。 每个终端设备(40a,40b)包括:指纹获取单元,被配置为从代码接收器(30a,30b)获取指纹;无线通信单元,被配置为经由无线通信发送和接收指纹;以及认证单元,被配置为认证 如果从另一终端设备接收到的指纹与从其连接的代码接收器获取的指纹匹配,则另一个终端设备。

    Measuring Equipment
    10.
    发明申请
    Measuring Equipment 有权
    测量设备

    公开(公告)号:US20080013071A1

    公开(公告)日:2008-01-17

    申请号:US11666078

    申请日:2005-11-01

    IPC分类号: G01J3/00

    CPC分类号: G01N21/3581

    摘要: A measuring equipment utilizing terahertz pulse light, includes: a terahertz light generator that generates terahertz pulse light; a terahertz light detector that detects terahertz pulse light; a first condensing optical system that condenses the terahertz pulse light generated by the terahertz light generator; and a second condensing optical system that condenses the terahertz pulse light diverging after being condensed by the first condensing optical system, onto the terahertz light detector. A sample is arranged in a vicinity of a position of condensing the terahertz pulse light by the first condensing optical system; and at least one of the first and the second condensing optical systems includes at least one optical device having a positive or negative refractive power. The measuring equipment further includes: a position adjusting mechanism that adjusts a position of the at least one optical device on an optical axis when the terahertz light detector detects the terahertz pulse light having transmitted through the sample; and a controlling unit that controls the position adjusting mechanism.

    摘要翻译: 利用太赫兹脉冲光的测量设备包括:产生太赫兹脉冲光的太赫兹光发生器; 检测太赫兹脉冲光的太赫兹光检测器; 第一聚光光学系统,其冷凝由太赫兹光发生器产生的太赫脉冲光; 以及第二聚光光学系统,其将由第一聚光光学系统聚集后的太赫兹脉冲光发散到太赫兹光检测器上。 将样品配置在通过第一聚光光学系统凝结太赫兹脉冲光的位置附近; 并且第一和第二聚光光学系统中的至少一个包括具有正或负折射光焦度的至少一个光学器件。 测量设备还包括:位置调节机构,当太赫兹光检测器检测到穿过样本的太赫兹脉冲光时,调节至少一个光学器件在光轴上的位置; 以及控制单元,其控制位置调整机构。