摘要:
It is an object to provide a technique to improve electric characteristics after a high-temperature treatment even when a high melting point metal barrier layer is not formed. A semiconductor device includes a gate electrode formed on a transparent insulation substrate, a semiconductor layer having a Si semiconductor active film and an ohmic low resistance Si film having an n-type conductivity, being formed in this order on the gate electrode with a gate insulation film interposed between the gate electrode and the semiconductor layer, and the source and drain electrodes directly connected to the semiconductor layer and containing at least aluminum (Al). At least nitrogen (N) is contained in a first region that is in the vicinity of an interface between a side surface of the SI semiconductor active film and the source and drain electrodes.
摘要:
It is an object to provide a technique to improve electric characteristics after a high-temperature treatment even when a high melting point metal barrier layer is not formed. A semiconductor device includes a gate electrode formed on a transparent insulation substrate, a semiconductor layer having a Si semiconductor active film and an ohmic low resistance Si film having an n-type conductivity, being formed in this order on the gate electrode with a gate insulation film interposed between the gate electrode and the semiconductor layer, and the source and drain electrodes directly connected to the semiconductor layer and containing at least aluminum (Al). At least nitrogen (N) is contained in a first region that is in the vicinity of an interface between a side surface of the SI semiconductor active film and the source and drain electrodes.
摘要:
An antireflection coating is formed on a transparent substrate and includes an Al film having a transmittance of lower than 10% at a wavelength of 550 nm with a thickness of 25 nm and predominantly composed of aluminum (Al), and an Al—N film formed in at least one of an upper layer and a lower layer of the Al film, having a transmittance of equal to or higher than 10% at a wavelength of 550 nm with a thickness of 25 nm, predominantly composed of Al and at least containing a nitrogen (N) element as an additive. A specific resistance of the antireflection coating is equal to or lower than 1.0×10−2 O·cm, and a reflectance of a surface of the Al—N film is equal to or lower than 50% in a visible light region.
摘要:
A semiconductor device includes a film containing silicon as the main ingredient, and an aluminum alloy film, such as a source electrode and a drain electrode, that is directly connected to the film containing silicon as the main ingredient, such as an ohmic low-resistance Si film, and contains at least Al, Ni, and N in the vicinity of the bonding interface. The Aluminum alloy film has a good contact characteristic when directly connected to the film containing silicon as the main ingredient without having a barrier layer formed of high melting point metal.
摘要:
A semiconductor device includes a film containing silicon as the main ingredient, and an aluminum alloy film, such as a source electrode and a drain electrode, that is directly connected to the film containing silicon as the main ingredient, such as an ohmic low-resistance Si film, and contains at least Al, Ni, and N in the vicinity of the bonding interface. The Aluminum alloy film has a good contact characteristic when directly connected to the film containing silicon as the main ingredient without having a barrier layer formed of high melting point metal.
摘要:
In accordance with one aspect of the present invention, an Al alloy film contains a first additive element composed of Ni, and at least one type of second additive element selected from the group consisting of Group 2A alkaline earth metals and Groups 3B and 4B metalloids in Period 2 or 3 of the periodic table of the elements. Furthermore, the composition ratio of the first additive element is 0.5-5 at %, and the composition ratio of the second additive element is 0.1-3 at %.
摘要:
A display device is provided with a laminated wiring including a low-resistance conductive film, a low-reflection film mainly containing Al and functioning as a reflection preventing film, and a cap film which are sequentially laminated on a transparent substrate, and an insulting film formed so as to cover the laminated wiring.
摘要:
A high-speed serial switch fabric is configured to perform a mapping of a traffic class that is capable of differentiating traffics onto a virtual channel. The high-speed serial switch fabric connects a plurality of devices. A traffic-class setting unit sets, when a conflict occurs between devices connected to the high-speed serial switch fabric, the traffic class for each of traffics in the devices having the conflict. A channel setting unit assigns each of set traffic classes to different virtual channels, and gives a priority of data communication to each of the set traffic classes.
摘要:
A wireless communication system includes code transmitters (20a, 20b) each configured to transmit a time-varying code; code receivers (30a, 30b) each configured to receive the time-varying codes transmitted from the code transmitters (20a, 20b) and generate a fingerprint based on the received time-varying codes, the fingerprint being unique to a space where the time-varying codes are receivable; and terminal devices (40a, 40b) configured to establish wireless communication connection therebetween with authentication. The terminal devices (40a, 40b) are connected to the code receivers (30a, 30b), respectively. Each terminal device (40a, 40b) includes a fingerprint acquiring unit configured to acquire the fingerprint from the code receiver (30a, 30b), a wireless communication unit configured to transmit and receive the fingerprint via wireless communication, and an authentication unit configured to authenticate another terminal device if the fingerprint received from the another terminal device matches the fingerprint acquired from the code receiver connected thereto.
摘要:
A measuring equipment utilizing terahertz pulse light, includes: a terahertz light generator that generates terahertz pulse light; a terahertz light detector that detects terahertz pulse light; a first condensing optical system that condenses the terahertz pulse light generated by the terahertz light generator; and a second condensing optical system that condenses the terahertz pulse light diverging after being condensed by the first condensing optical system, onto the terahertz light detector. A sample is arranged in a vicinity of a position of condensing the terahertz pulse light by the first condensing optical system; and at least one of the first and the second condensing optical systems includes at least one optical device having a positive or negative refractive power. The measuring equipment further includes: a position adjusting mechanism that adjusts a position of the at least one optical device on an optical axis when the terahertz light detector detects the terahertz pulse light having transmitted through the sample; and a controlling unit that controls the position adjusting mechanism.