摘要:
Systems, methods and circuits for regulator minimum load control. In one particular case, a system is provided that includes a load control circuit and a switched load. The load control circuit includes a reference current, and a sense current representative of a load current. In addition, the load control circuit includes a comparator circuit that drives a control signal in response to a comparison between the reference current and the sense current. The switched load is electrically coupled to a load voltage signal to provide loading to the load voltage signal. The switched load is operable to switch between a first loading factor and a second loading factor in response to the control signal.
摘要:
A switch mode regulator circuit is provided to facilitate the conversion from one voltage level to another in a substantially power lossless manner. The circuit is particularly advantageous in instances where the power supply can be operable in a discontinuous mode, as inductor-capacitor oscillatory transients ("ringing"), along with its associated voltage spikes at the associated output transistor source, can be avoided. Such transients and their associated voltages are avoided by clamping the gate-source voltage on the circuit's output NMOS transistor over the entire positive operation voltage range.
摘要:
A high-breakdown voltage transistor (30; 30′) is disclosed. The transistor (30; 30′) is formed into a well arrangement in which a shallow, heavily doped, well (44) is disposed at least partially within a deeper, more lightly-doped well (50), both formed into an epitaxial layer (43) of the substrate (42). The deep well (50) is also used, by itself, for the formation of high-voltage transistors, while the shallower well (44) is used by itself in low-voltage, high-performance transistors. This construction permits the use of high-performance, and precisely matching, transistors in high bias voltage applications, without fear of body-to-substrate (or “back-gate-to-substrate”) junction breakdown.
摘要:
An integrated circuit (10) having at least one programmable fuse (F1) and ESD circuitry (MN3, MN1) preventing the fuse (F1) from being unintentionally blown when a voltage transient exists on a main voltage potential (Vmain). The ESD circuitry preferably comprises of MOSFET switches which are coupled to turn on quicker than a main fuse programming switch (MNmain) due to the voltage transient, thereby insuring that the main switch remains off during the voltage transient to prevent the unintentional blowing of the fuse F1. The circuit is well suited for programmable logic device (PLDs), allowing for read voltages as low as 6 volts, and allowing for programming voltages as high as 40 volts.
摘要:
A voltage level shifting circuit (60) and method for accomplishing a voltage level change includes a voltage level shifting circuit (65) to change an input voltage to a shifted voltage level. A second stage (67) is connected between a voltage source at the shifted voltage level (68) and the reference potential. The second stage (67) includes active devices (66,82) that are controlled by the voltage level shifting circuit (65). The second stage (67) also includes slope resistors (86,88) connected in series between the active devices (66,82) of the second stage (67).