Dynamic targeting for a process control system

    公开(公告)号:US06773931B2

    公开(公告)日:2004-08-10

    申请号:US10207525

    申请日:2002-07-29

    IPC分类号: H01L2100

    摘要: A method and an apparatus for dynamic targeting for a process control system. A process step is performed upon a first workpiece in a batch based upon a process target setting. The process target setting comprises at least one parameter relating to a target characteristic of the first workpiece. Manufacturing data relating to processing of the first workpiece is acquired. The manufacturing data comprises at least one of a metrology data relating to the processed first workpiece and a tool state data relating to the tool state of a processing tool. Electrical data relating to the processed first workpiece is acquired at least partially during processing of a second workpiece in the batch. The process target setting is adjusted dynamically based upon a correlation of the electrical data with the manufacturing data.

    Method and apparatus for determining a sampling plan based on process and equipment fingerprinting
    22.
    发明授权
    Method and apparatus for determining a sampling plan based on process and equipment fingerprinting 有权
    基于过程和设备指纹识别取样计划的方法和装置

    公开(公告)号:US06650955B1

    公开(公告)日:2003-11-18

    申请号:US10024675

    申请日:2001-12-18

    IPC分类号: G06F1900

    摘要: A processing line includes a processing tool, a metrology tool, a processing monitor, and a sampling controller. The processing tool is configured to process workpieces. The metrology tool is configured to measure an output characteristic of selected workpieces in accordance with a sampling plan. The processing monitor is configured to monitor the processing of at least one workpiece in the processing tool to generate a fingerprint and determine a processing metric based on the fingerprint. The sampling controller is configured to receive the processing metric and determine the sampling plan for the metrology tool based on the processing metric. A method for processing workpieces includes processing a plurality of workpieces in a processing tool. A characteristic of selected workpieces is measured in accordance with a sampling plan. The processing of at least one workpiece in the processing tool is monitored to generate a fingerprint. A processing metric is determined based on the fingerprint. The sampling plan is determined based on the processing metric.

    摘要翻译: 处理线包括处理工具,计量工具,处理监视器和采样控制器。 处理工具被配置为处理工件。 计量工具被配置为根据抽样计划来测量所选择的工件的输出特性。 处理监视器被配置为监视处理工具中的至少一个工件的处理以生成指纹并且基于指纹来确定处理度量。 采样控制器被配置为基于处理度量来接收处理度量并确定计量工具的采样计划。 一种用于处理工件的方法包括在处理工具中处理多个工件。 所选工件的特性根据抽样计划进行测量。 对处理工具中的至少一个工件进行处理以产生指纹。 基于指纹确定处理度量。 采样计划是根据处理度量确定的。

    Method and apparatus for determining control actions incorporating defectivity effects
    25.
    发明授权
    Method and apparatus for determining control actions incorporating defectivity effects 有权
    用于确定包含缺陷效应的控制动作的方法和装置

    公开(公告)号:US06745086B1

    公开(公告)日:2004-06-01

    申请号:US10114785

    申请日:2002-04-03

    IPC分类号: G06F1300

    CPC分类号: H01L22/20

    摘要: A method includes processing workpieces in accordance with an operating recipe. Metrology data associated with at least one of the workpieces is received. A proposed control action is generated based on the metrology data. A defectivity metric is generated based on the proposed control action. The proposed control action is modified based on the defectivity metric. A manufacturing system includes a process tool, a metrology tool, and a process controller. The process tool is configured to process workpieces in accordance with an operating recipe. The metrology tool is configured to provide metrology data associated with at least one of the workpieces. The process controller is configured to generate a proposed control action based on the metrology data, generate a defectivity metric based on the proposed control action, and modify the proposed control action based on the defectivity metric.

    摘要翻译: 一种方法包括根据操作配方处理工件。 接收与至少一个工件相关联的计量数据。 基于测量数据生成提出的控制动作。 基于所提出的控制动作产生缺陷度量。 所提出的控制动作根据缺陷度量进行修改。 制造系统包括处理工具,计量工具和过程控制器。 过程工具被配置为根据操作配方处理工件。 计量工具被配置为提供与至少一个工件相关联的度量数据。 过程控制器被配置为基于测量数据生成提出的控制动作,基于所提出的控制动作生成缺陷度量,并且基于缺陷度量度修改所提出的控制动作。

    Method and apparatus for determining output characteristics using tool state data
    26.
    发明授权
    Method and apparatus for determining output characteristics using tool state data 有权
    使用工具状态数据确定输出特性的方法和装置

    公开(公告)号:US06678570B1

    公开(公告)日:2004-01-13

    申请号:US09891898

    申请日:2001-06-26

    IPC分类号: G06F1900

    摘要: A method for determining output characteristics of a workpiece includes generating a tool state trace related to the processing of a workpiece in a tool; comparing the generated tool state trace to a library of reference tool state traces, each reference tool state trace having an output characteristic metric; selecting a reference tool state trace closest to the generated tool state trace; and determining an output characteristic of the workpiece based on the output characteristic metric associated with the selected reference tool state trace. A manufacturing system includes a tool and a tool state monitor. The tool is adapted to process a workpiece. The tool state monitor is adapted to generate a tool state trace related to the processing of a workpiece in the tool, compare the generated tool state trace to a library of reference tool state traces, each reference tool state trace having an output characteristic metric, select a reference tool state trace closest to the generated tool state trace, and determine an output characteristic of the workpiece based on the output characteristic metric associated with the selected reference tool state trace.

    摘要翻译: 一种用于确定工件的输出特性的方法包括产生与工具中的工件的加工相关的工具状态迹线; 将生成的刀具状态跟踪与参考刀具状态轨迹库进行比较,每个参考刀具状态轨迹具有输出特征量度; 选择最接近生成的刀具状态轨迹的参考刀具状态轨迹; 以及基于与所选择的参考工具状态轨迹相关联的输出特性度量来确定工件的输出特性。 制造系统包括工具和工具状态监视器。 该工具适用于加工工件。 刀具状态监视器适于生成与刀具中的工件的处理相关的刀具状态跟踪,将生成的刀具状态跟踪与参考刀具状态轨迹库进行比较,每个刀具状态轨迹具有输出特性量度,选择 最接近生成的刀具状态轨迹的参考刀具状态轨迹,并且基于与所选择的参考刀具状态轨迹相关联的输出特性量度来确定工件的输出特性。

    Methods for dynamically controlling etch endpoint time, and system for accomplishing same
    27.
    发明授权
    Methods for dynamically controlling etch endpoint time, and system for accomplishing same 有权
    动态控制蚀刻终点时间的方法,以及完成相同的系统

    公开(公告)号:US06660539B1

    公开(公告)日:2003-12-09

    申请号:US10040299

    申请日:2001-11-07

    IPC分类号: H01L2166

    摘要: A method comprising performing an etch process recipe comprised of an endpoint etch process and a timed over-etch process on each of a first plurality of substrates to form at least one opening in each layer of insulating material, determining a duration of the endpoint etch process performed on the first plurality of substrates, determining a duration of the timed over-etch process of the etch process recipe to be performed on a second plurality of substrates based upon the determined duration of the endpoint etch process performed on the first plurality of substrates, and performing the etch process recipe comprised of the endpoint etch process and the timed over-etch process of the determined duration on the second plurality of semiconducting substrates. A system comprised of an etch tool for forming at least one opening in a layer of insulating material formed above each of a first plurality of semiconducting substrates by performing an etch recipe comprised of an endpoint etch process and a timed over-etch process on each of the substrates, and a controller that determines a duration of the endpoint etch process performed on the first plurality of substrates and determines a duration of the timed over-etch process of the etch recipe to be performed on a second plurality of semiconducting substrates based upon the determined duration of the endpoint etch process performed on the first plurality of substrates.

    摘要翻译: 一种方法,包括在第一多个基板中的每一个上执行包括端点蚀刻工艺和定时过蚀刻工艺的蚀刻工艺配方,以在每层绝缘材料中形成至少一个开口,确定端点蚀刻工艺的持续时间 在所述第一多个基板上执行,基于在所述第一多个基板上执行的所述端点蚀刻工艺的所确定的持续时间,确定将在第二多个基板上执行的所述蚀刻工艺配方的定时过蚀刻工艺的持续时间, 以及执行包括端点蚀刻工艺和在第二多个半导体衬底上确定的持续时间的定时过蚀刻工艺的蚀刻工艺配方。 一种系统,包括用于在绝缘材料层中形成至少一个开口的蚀刻工具,所述绝缘材料层通过执行由端点蚀刻工艺和定时过蚀刻工艺组成的蚀刻配方,所述蚀刻配方由第一多个半导体衬底 基板和控制器,其确定在第一多个基板上执行的端点蚀刻工艺的持续时间,并且基于第二多个半导体基板确定要对第二多个半导体基板执行的蚀刻配方的定时过蚀刻工艺的持续时间 确定在第一多个基板上执行的端点蚀刻工艺的持续时间。

    Method and apparatus for controlling a plating process
    28.
    发明授权
    Method and apparatus for controlling a plating process 有权
    控制电镀工艺的方法和装置

    公开(公告)号:US06444481B1

    公开(公告)日:2002-09-03

    申请号:US09897626

    申请日:2001-07-02

    IPC分类号: H01L2100

    摘要: A method for controlling a plating process includes plating a process layer on a wafer in accordance with a recipe; measuring a thickness of the process layer; and determining at least one plating parameter of the recipe for subsequently formed process layers based on the measured thickness. A processing line includes a plating tool, a metrology tool, and a process controller. The plating tool is adapted to form a process layer on a wafer in accordance with a recipe. The metrology tool is adapted to measure a thickness of the process layer. The process controller is adapted to determine at least one plating parameter of the recipe for subsequently formed process layers based on the measured thickness.

    摘要翻译: 一种控制电镀工艺的方法包括根据配方在晶片上镀覆工艺层; 测量处理层的厚度; 以及基于测量的厚度,确定随后形成的处理层的配方的至少一个电镀参数。 处理线包括电镀工具,计量工具和过程控制器。 电镀工具适于根据配方在晶片上形成工艺层。 测量工具适用于测量工艺层的厚度。 过程控制器适于基于测量的厚度来确定随后形成的处理层的配方的至少一个电镀参数。

    Method and apparatus for modifying design constraints based on observed performance
    30.
    发明授权
    Method and apparatus for modifying design constraints based on observed performance 失效
    基于观察性能修改设计约束的方法和装置

    公开(公告)号:US06907369B1

    公开(公告)日:2005-06-14

    申请号:US10425227

    申请日:2003-05-02

    摘要: A method for modifying design constraints based on observed performance includes measuring a characteristic of a plurality of devices manufactured in a process flow. A design constraint associated with the characteristic is defined. A performance metric relating the performance of the devices as a function of the measured characteristic and the design constraint is generated. The design constraint is modified based on the performance metric. A manufacturing system includes a metrology tool and a design rule monitor. The metrology tool is configured to measure a characteristic of a plurality of devices manufactured in a process flow. The design rule monitor is configured to receive a design constraint associated with the characteristic, generate a performance metric relating the performance of the devices as a function of the measured characteristic and the design constraint, and modify the design constraint based on the performance metric.

    摘要翻译: 基于观察到的性能来修改设计约束的方法包括测量在处理流程中制造的多个设备的特性。 定义与特性相关的设计约束。 产生与测量特性和设计约束相关的设备性能的性能指标。 基于性能指标修改设计约束。 制造系统包括计量工具和设计规则监视器。 计量工具被配置为测量在处理流程中制造的多个装置的特性。 设计规则监视器被配置为接收与特性相关联的设计约束,根据测量的特性和设计约束生成与设备的性能相关的性能度量,并且基于性能度量来修改设计约束。