公开(公告)号：US20200152489A1

公开(公告)日：2020-05-14

申请号：US16675551

申请日：2019-11-06

Applicant: Tokyo Electron Limited

Inventor： Takao Inada ,  Hironobu Hyakutake ,  Hisashi Kawano

IPC: H01L21/67 ,  H01L21/677 ,  H01L21/311

Abstract: A substrate processing method includes etching a substrate on which a silicon oxide film and a silicon nitride film are formed with a phosphoric acid processing liquid. In the etching, a silicon concentration in the phosphoric acid processing liquid is a first silicon concentration at which the silicon oxide film is etched, from a start time until a first time interval has elapsed.

公开(公告)号：US20190122905A1

公开(公告)日：2019-04-25

申请号：US16163918

申请日：2018-10-18

Applicant: Tokyo Electron Limited

Inventor： Hiroki Ohno ,  Takao Inada ,  Hisashi Kawano

IPC: H01L21/67 ,  H01L21/311 ,  H01L21/66

Abstract: A substrate processing apparatus includes a processing unit and a control unit. The processing unit is configured to perform an etching processing by immersing a substrate in a processing liquid containing phosphoric acid and a silicon-containing compound. The control unit is configured to control the processing liquid such that the substrate is processed, in a first processing time of the etching processing, with the processing liquid having a first phosphoric acid concentration and a first silicon concentration, and the substrate is processed, in a second processing time later than the first processing time, with the processing liquid having a second preset phosphoric acid concentration lower than the first phosphoric acid concentration and a second preset silicon concentration lower than the first silicon concentration or with the processing liquid having the second preset phosphoric acid concentration and the first silicon concentration.

公开(公告)号：US20190096710A1

公开(公告)日：2019-03-28

申请号：US16143918

申请日：2018-09-27

Applicant: Tokyo Electron Limited

Inventor： Hideaki Sato ,  Hiroki Ohno ,  Yoshinori Nishiwaki ,  Takao Inada ,  Hisashi Kawano

IPC: H01L21/67 ,  H01L21/311

Abstract: A substrate processing apparatus, a substrate processing method and a recording medium capable of suppressing precipitation of a silicon oxide while improving selectivity for etching a silicon nitride film are provided. The substrate processing apparatus includes a SiO2 precipitation inhibitor supply unit and a control unit. The SiO2 precipitation inhibitor supply unit is configured to supply a SiO2 precipitation inhibitor to be mixed into a phosphoric acid processing liquid used in performing an etching processing in a substrate processing tub. The control unit is configured to set a SiO2 precipitation inhibitor concentration contained in the phosphoric acid processing liquid based on a temperature of the phosphoric acid processing liquid, and configured to control a supply amount of the SiO2 precipitation inhibitor to achieve the set SiO2 precipitation inhibitor concentration.

公开(公告)号：US20170358470A1

公开(公告)日：2017-12-14

申请号：US15617134

申请日：2017-06-08

Applicant: Tokyo Electron Limited

Inventor： Hiroshi Tanaka ,  Tsukasa Hirayama ,  Takao Inada

IPC: H01L21/67

CPC classification number: H01L21/67248 ,  H01L21/67017 ,  H01L21/67086 ,  H01L21/67253

Abstract: A substrate liquid processing apparatus includes a liquid processing unit, a processing liquid circulating line, and a boiling state detecting unit provided in a processing bath of the liquid processing unit. The controller controls a supply pump of the processing liquid circulating line based on a signal from the boiling state detecting unit, and adjusts a pressure of a supplied phosphoric acid aqueous solution in a flow path so as to adjust the boiling state of the phosphoric acid aqueous solution to a desired state.