公开(公告)号：US11075096B2

公开(公告)日：2021-07-27

申请号：US16675551

申请日：2019-11-06

Applicant: Tokyo Electron Limited

Inventor： Takao Inada ,  Hironobu Hyakutake ,  Hisashi Kawano

IPC: H01L21/67 ,  H01L21/677 ,  H01L21/311

Abstract: A substrate processing method includes etching a substrate on which a silicon oxide film and a silicon nitride film are formed with a phosphoric acid processing liquid. In the etching, a silicon concentration in the phosphoric acid processing liquid is a first silicon concentration at which the silicon oxide film is etched, from a start time until a first time interval has elapsed.

公开(公告)号：US10651061B2

公开(公告)日：2020-05-12

申请号：US16163918

申请日：2018-10-18

Applicant: Tokyo Electron Limited

Inventor： Hiroki Ohno ,  Takao Inada ,  Hisashi Kawano

IPC: H01L21/66 ,  H01L21/67 ,  H01L21/311

Abstract: A substrate processing apparatus includes a processing unit and a control unit. The processing unit is configured to perform an etching processing by immersing a substrate in a processing liquid containing phosphoric acid and a silicon-containing compound. The control unit is configured to control the processing liquid such that the substrate is processed, in a first processing time of the etching processing, with the processing liquid having a first phosphoric acid concentration and a first silicon concentration, and the substrate is processed, in a second processing time later than the first processing time, with the processing liquid having a second preset phosphoric acid concentration lower than the first phosphoric acid concentration and a second preset silicon concentration lower than the first silicon concentration or with the processing liquid having the second preset phosphoric acid concentration and the first silicon concentration.

公开(公告)号：US09224624B2

公开(公告)日：2015-12-29

申请号：US14580787

申请日：2014-12-23

Applicant: Tokyo Electron Limited

Inventor： Takao Inada ,  Naoyuki Okamura ,  Hidetsugu Yano ,  Yosuke Hachiya

IPC: B08B7/00 ,  B08B3/00 ,  B08B7/04 ,  H01L21/67

CPC classification number: H01L21/67028 ,  H01L21/67017 ,  H01L21/67051 ,  Y10S134/902

Abstract: A liquid processing method is provided for performing a liquid process on a front surface of a substrate by using a processing solution and then performing a rinse process on the front surface of the substrate by using a rinse solution having a temperature lower than a temperature of the processing solution. The method includes performing an intermediate process between the liquid process and the rinse process, for adjusting a temperature of the front surface of the substrate to a temperature higher than the temperature of the rinse solution and lower than the temperature of the processing solution. In the intermediate process, an intermediate processing solution having a temperature higher than the temperature of the rinse solution and lower than the temperature of the processing solution is supplied only to a rear surface of the substrate.

Abstract translation: 提供一种液体处理方法，用于通过使用处理溶液在基板的前表面上进行液体处理，然后通过使用温度低于基板的温度的冲洗溶液在基板的前表面上进行冲洗处理 处理方案。 该方法包括在液体处理和漂洗过程之间执行中间过程，用于将衬底的前表面的温度调节到高于冲洗溶液的温度并低于处理溶液的温度的温度。 在中间方法中，将仅具有比冲洗溶液的温度高且低于处理液的温度的中间处理液供给到基板的背面。

公开(公告)号：US11742226B2

公开(公告)日：2023-08-29

申请号：US16727007

申请日：2019-12-26

Applicant: Tokyo Electron Limited

Inventor： Takahiko Otsu ,  Kazuya Koyama ,  Takao Inada

IPC: B05B12/14 ,  H01L21/67 ,  B08B3/04

CPC classification number: H01L21/6715 ,  B05B12/1409 ,  B08B3/048 ,  H01L21/67023 ,  H01L21/67028 ,  H01L21/67051 ,  H01L21/67057 ,  H01L21/67086

Abstract: A substrate processing apparatus includes: a processing tank that stores a processing liquid for performing a liquid processing on a plurality of substrates; a substrate support that supports the plurality of substrates such that main surfaces of each of the plurality of substrates follow a vertical direction in the processing tank; a processing liquid ejection unit provided below the plurality of substrates supported by the substrate support, and generates an ascending flow of the processing liquid in the processing tank; and a rectifying section that adjusts flow of the processing liquid in a side space formed between a first side wall of the processing tank and a first substrate having a main surface facing the first side wall of the processing tank among the plurality of substrates.

公开(公告)号：US11724235B2

公开(公告)日：2023-08-15

申请号：US16816379

申请日：2020-03-12

Applicant: Tokyo Electron Limited

Inventor： Jun Nonaka ,  Takao Inada ,  Kouji Ogura

IPC: B01F3/08 ,  B01F11/02 ,  B01F13/02 ,  B01F15/06 ,  B01F23/40 ,  B01F23/43 ,  B01F23/451 ,  B01F31/80 ,  B01F33/40 ,  B01F35/90 ,  B01F101/58

CPC classification number: B01F23/405 ,  B01F23/43 ,  B01F23/451 ,  B01F31/831 ,  B01F33/402 ,  B01F35/90 ,  B01F2035/99 ,  B01F2101/58

Abstract: A mixing apparatus includes a phosphoric acid aqueous solution supply, an additive supply, a tank, a phosphoric acid aqueous solution supply path and an additive supply path. The phosphoric acid aqueous solution supply is configured to supply a phosphoric acid aqueous solution. The additive supply is configured to supply an additive configured to suppress precipitation of a silicon oxide. The phosphoric acid aqueous solution supply path is configured to connect the phosphoric acid aqueous solution supply with the tank. The additive supply path is configured to connect the additive supply with the tank. The additive is supplied while fluidity is imparted to the phosphoric acid aqueous solution supplied from the phosphoric acid aqueous solution supply into the tank.

公开(公告)号：US11087992B2

公开(公告)日：2021-08-10

申请号：US16778267

申请日：2020-01-31

Applicant: Tokyo Electron Limited

Inventor： Tsukasa Hirayama ,  Takao Inada ,  Hironobu Hyakutake ,  Kazuya Koyama ,  Hisashi Kawano

IPC: H01L21/311 ,  H01L21/3213 ,  H01L21/306 ,  B08B3/08 ,  H01L21/67 ,  H01L21/02

Abstract: An etching method includes a first etching step, a processing step, and a second etching step. The first etching step is performed to etch a substrate on which a silicon oxide film and a silicon nitride film are formed with an etching liquid. The processing step is performed to process a pattern in the silicon oxide film on the substrate with a pattern shape processing liquid after the first etching step. The second etching step is performed to etch the substrate with the etching liquid after the processing step.

公开(公告)号：US11424141B2

公开(公告)日：2022-08-23

申请号：US16165118

申请日：2018-10-19

Applicant: Tokyo Electron Limited

Inventor： Jian Zhang ,  Takao Inada ,  Hisashi Kawano ,  Seigo Fujitsu ,  Hideaki Sato ,  Teruaki Konishi ,  Toshiyuki Shiokawa ,  Koji Ogura ,  Hiroshi Yoshida

IPC: H01L21/67 ,  H01L21/306 ,  H01L21/311

Abstract: A substrate processing apparatus, a substrate processing method and a recording medium capable of shortening an etching processing time are provided. The substrate processing apparatus includes a substrate processing tub, a mixing unit and a supply line. The substrate processing tub is configured to perform an etching processing therein with an etching liquid. The mixing unit is configured to mix a new liquid with a silicon-containing compound or a liquid containing the silicon-containing compound. The supply line is configured to supply a mixed solution mixed by the mixing unit into the substrate processing tub.

公开(公告)号：US20200294823A1

公开(公告)日：2020-09-17

申请号：US16816530

申请日：2020-03-12

Applicant: Tokyo Electron Limited

Inventor： Kouji Ogura ,  Jun Nonaka ,  Takao Inada ,  Yoshinori Nishiwaki ,  Hiroshi Yoshida

IPC: H01L21/67

Abstract: A substrate processing apparatus includes a processing bath, a mixing device, a liquid path, and a silicon solution supply. A substrate is immersed in the processing bath to be processed. The mixing device generates a mixture liquid by mixing a phosphoric acid aqueous solution with an additive that suppresses precipitation of silicon oxide. The liquid path sends the mixture liquid from the mixing device to the processing bath. The silicon solution supply is connected to at least one of the liquid path and the processing bath, and supplies a silicon-containing compound aqueous solution to the mixture liquid supplied from the mixing device.

公开(公告)号：US20190148183A1

公开(公告)日：2019-05-16

申请号：US16164919

申请日：2018-10-19

Applicant: Tokyo Electron Limited

Inventor： Takao Inada ,  Hisashi Kawano ,  Hiroki Ohno

IPC: H01L21/67 ,  H01L21/311 ,  H01L21/66

Abstract: A substrate processing apparatus according to an embodiment includes a substrate processing tank, a temperature adjustment unit, and a controller. The substrate processing tank is configured to perform an etching processing by immersing a substrate in a phosphoric acid processing liquid therein. The temperature adjustment unit is configured to adjust the temperature of the phosphoric acid processing liquid. The controller is configured to control the temperature adjustment unit to lower the temperature of the phosphoric acid processing liquid as the etching processing proceeds.

公开(公告)号：US20190096711A1

公开(公告)日：2019-03-28

申请号：US16144016

申请日：2018-09-27

Applicant: Tokyo Electron Limited

Inventor： Hiroki Ohno ,  Hideaki Sato ,  Takao Inada ,  Hisashi Kawano ,  Yoshinori Nishiwaki ,  Takahiko Otsu

IPC: H01L21/67 ,  H01L21/311

Abstract: A substrate processing apparatus and a substrate processing method capable of suppressing precipitation of a silicon oxide while improving selectivity for etching a silicon nitride film are provided. The substrate processing apparatus includes a substrate processing tub, a phosphoric acid processing liquid supply unit, a circulation path, a SiO2 precipitation inhibitor supply unit and a mixing unit. The phosphoric acid processing liquid supply unit is configured to supply a phosphoric acid processing liquid used in performing an etching processing in the substrate processing tub. The circulation path is configured to circulate the phosphoric acid processing liquid supplied into the substrate processing tub. The SiO2 precipitation inhibitor supply unit is configured to supply a SiO2 precipitation inhibitor into the circulation path. The mixing unit is configured to mix a silicon-containing compound into the phosphoric acid processing liquid before the phosphoric acid processing liquid is supplied into the circulation path.