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公开(公告)号：US20180247841A1
公开(公告)日：2018-08-30
申请号：US15905941
申请日：2018-02-27
发明人： Takashi Nagai , Hideaki Sato , Hiromi Hara , Hiroshi Yoshida , Tsukasa Hirayama
CPC分类号： H01L21/67086 , G08B21/18 , H01L21/67248 , H01L21/67253
摘要： A substrate liquid processing apparatus includes a processing tub 34A which is configured to store therein a processing liquid in a boiling state and in which a processing of a substrate 8 is performed by immersing the substrate in the stored processing liquid; a concentration sensor 55B configured to detect a concentration of a chemical liquid component contained in the processing liquid; a concentration control unit 7 (40, 41) configured to control the concentration of the chemical liquid component to a set concentration by adding the chemical liquid component or a diluting solution to the processing liquid based on a detection concentration of the concentration sensor; a head pressure sensor 86B configured to detect a head pressure of the processing liquid within the processing tub; and a concentration set value correction unit 7 configured to correct, based on a detection value of the head pressure sensor, the set concentration.
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公开(公告)号：US11087992B2
公开(公告)日：2021-08-10
申请号：US16778267
申请日：2020-01-31
IPC分类号： H01L21/311 , H01L21/3213 , H01L21/306 , B08B3/08 , H01L21/67 , H01L21/02
摘要： An etching method includes a first etching step, a processing step, and a second etching step. The first etching step is performed to etch a substrate on which a silicon oxide film and a silicon nitride film are formed with an etching liquid. The processing step is performed to process a pattern in the silicon oxide film on the substrate with a pattern shape processing liquid after the first etching step. The second etching step is performed to etch the substrate with the etching liquid after the processing step.
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公开(公告)号：US11062922B2
公开(公告)日：2021-07-13
申请号：US15905941
申请日：2018-02-27
发明人： Takashi Nagai , Hideaki Sato , Hiromi Hara , Hiroshi Yoshida , Tsukasa Hirayama
摘要： A substrate liquid processing apparatus includes a processing tub 34A which is configured to store therein a processing liquid in a boiling state and in which a processing of a substrate 8 is performed by immersing the substrate in the stored processing liquid; a concentration sensor 55B configured to detect a concentration of a chemical liquid component contained in the processing liquid; a concentration control unit 7 (40, 41) configured to control the concentration of the chemical liquid component to a set concentration by adding the chemical liquid component or a diluting solution to the processing liquid based on a detection concentration of the concentration sensor; a head pressure sensor 86B configured to detect a head pressure of the processing liquid within the processing tub; and a concentration set value correction unit 7 configured to correct, based on a detection value of the head pressure sensor, the set concentration.
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公开(公告)号：US09721813B2
公开(公告)日：2017-08-01
申请号：US13937306
申请日：2013-07-09
IPC分类号： H01L21/00 , B08B13/00 , B08B3/04 , H01L21/67 , H01L21/687
CPC分类号： H01L21/67051 , B08B3/04 , B08B13/00 , H01L21/68735
摘要： The present disclosure provides a cleaning method which enables a cup and a member around the cup to be cleaned thoroughly. In this cleaning method, a cleaning liquid is supplied to a cleaning jig from the upper side of the cleaning jig while rotating the cleaning jig held by a substrate holding unit. The cleaning liquid supplied to the cleaning jig is scattered obliquely upward along an inclined surface of an inclined portion which is provided around the entire circumference of the cleaning jig in the vicinity of the outer circumferential edge of the cleaning jig, thereby cleaning cups.
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公开(公告)号：US20140014134A1
公开(公告)日：2014-01-16
申请号：US13937306
申请日：2013-07-09
CPC分类号： H01L21/67051 , B08B3/04 , B08B13/00 , H01L21/68735
摘要： The present disclosure provides a cleaning method which enables a cup and a member around the cup to be cleaned thoroughly. In this cleaning method, a cleaning liquid is supplied to a cleaning jig from the upper side of the cleaning jig while rotating the cleaning jig held by a substrate holding unit. The cleaning liquid supplied to the cleaning jig is scattered obliquely upward along an inclined surface of an inclined portion which is provided around the entire circumference of the cleaning jig in the vicinity of the outer circumferential edge of the cleaning jig, thereby cleaning cups.
摘要翻译： 本公开提供一种清洁方法，其能够使杯和杯周围的构件被彻底清洁。 在这种清洁方法中，从旋转由基板保持单元保持的清洁夹具旋转的同时，将清洗液从清洁夹具的上侧供给到清洁夹具。 提供给清洁夹具的清洗液体沿着清洁夹具的整个周边设置在清洁夹具的外周边缘附近的倾斜部分的倾斜表面上倾斜向上散布，从而清洁杯子。
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6.发明授权Substrate processing method, storage medium storing computer program for implementing substrate processing method and substrate processing apparatus 有权基板处理方法，存储用于实现基板处理方法的计算机程序的存储介质和基板处理装置公开(公告)号：US09321085B2
公开(公告)日：2016-04-26
申请号：US13687142
申请日：2012-11-28
发明人： Teruomi Minami , Satoru Tanaka , Tatsuya Nagamatsu , Hiroyuki Suzuki , Yosuke Kawabuchi , Tsukasa Hirayama , Katsufumi Matsuki
CPC分类号： B08B3/04 , H01L21/67034
摘要： A chemical liquid process is performed on a substrate. Then, a rinse process that supplies a rinse liquid to the substrate is performed. Thereafter, a drying process that dries the substrate is performed while rotating the substrate. The drying process includes a first drying process that rotates the substrate at a first rotational speed; a second drying process that decreases the rotational speed of the substrate to a second rotational speed lower than the first rotational speed after the first drying process. In the second drying process, the rinse liquid and a drying solution are agitated and substituted while generating braking effect. In a third drying process, the rotational speed of the substrate is increased from the second rotational speed to a third rotational speed after the second drying process. Thereafter, in a fourth drying process, the drying solution on the substrate is scattered away by rotating the substrate.
摘要翻译： 在基板上进行化学液体处理。 然后，进行向基板供给冲洗液的冲洗处理。 此后，在旋转基板的同时进行干燥基板的干燥处理。 干燥过程包括以第一转速旋转衬底的第一干燥过程; 第二干燥处理，其在第一干燥处理之后将基板的转速降低到低于第一转速的第二转速。 在第二干燥过程中，冲洗液和干燥溶液在产生制动效果的同时进行搅拌和取代。 在第三干燥处理中，在第二次干燥处理之后，基板的转速从第二转速增加到第三转速。 此后，在第四干燥过程中，通过旋转基板将基板上的干燥溶液散开。
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公开(公告)号：US11309194B2
公开(公告)日：2022-04-19
申请号：US15883481
申请日：2018-01-30
发明人： Koji Tanaka , Toshiyuki Shiokawa , Koji Yamashita , Hiroyuki Masutomi , Hitoshi Kosugi , Takao Inada , Takashi Ikeda , Tsukasa Hirayama
IPC分类号： H01L21/67 , H01L21/673 , H01L21/677
摘要： A substrate liquid treatment apparatus includes an inner tank configured to store a treatment liquid and having an upper opening, an outer tank disposed outside the inner tank, and a lid movable between a close position for closing the upper opening of the inner tank and an open position for opening the upper opening of the inner tank. The lid includes a main portion that covers the upper opening of the inner tank when the lid is positioned at the close position, and a splash shielding portion connected to the main portion. When the lid is positioned at the close position, the splash shielding portion extends from a position higher than an upper end of a side wall of the inner tank adjacent to the splash shielding portion to a position which is lower than the upper end of the side wall and which is on the outer tank side of the side wall.
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公开(公告)号：US20210335621A1
公开(公告)日：2021-10-28
申请号：US17367975
申请日：2021-07-06
IPC分类号： H01L21/311 , B08B3/08 , H01L21/67 , H01L21/02 , H01L21/3213 , H01L21/306
摘要： An etching method includes a first etching step, a processing step, and a second etching step. The first etching step is performed to etch a substrate on which a silicon oxide film and a silicon nitride film are formed with an etching liquid. The processing step is performed to process a pattern in the silicon oxide film on the substrate with a pattern shape processing liquid after the first etching step. The second etching step is performed to etch the substrate with the etching liquid after the processing step.
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公开(公告)号：US20200251343A1
公开(公告)日：2020-08-06
申请号：US16778267
申请日：2020-01-31
IPC分类号： H01L21/311 , B08B3/08 , H01L21/02 , H01L21/67
摘要： An etching method includes a first etching step, a processing step, and a second etching step. The first etching step is performed to etch a substrate on which a silicon oxide film and a silicon nitride film are formed with an etching liquid. The processing step is performed to process a pattern in the silicon oxide film on the substrate with a pattern shape processing liquid after the first etching step. The second etching step is performed to etch the substrate with the etching liquid after the processing step.
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10.发明申请公开(公告)号：US20170358470A1
公开(公告)日：2017-12-14
申请号：US15617134
申请日：2017-06-08
发明人： Hiroshi Tanaka , Tsukasa Hirayama , Takao Inada
IPC分类号： H01L21/67
CPC分类号： H01L21/67248 , H01L21/67017 , H01L21/67086 , H01L21/67253
摘要： A substrate liquid processing apparatus includes a liquid processing unit, a processing liquid circulating line, and a boiling state detecting unit provided in a processing bath of the liquid processing unit. The controller controls a supply pump of the processing liquid circulating line based on a signal from the boiling state detecting unit, and adjusts a pressure of a supplied phosphoric acid aqueous solution in a flow path so as to adjust the boiling state of the phosphoric acid aqueous solution to a desired state.
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