公开(公告)号：US10916456B2

公开(公告)日：2021-02-09

申请号：US15826886

申请日：2017-11-30

申请人： Tokyo Electron Limited

发明人： Hironobu Hyakutake

IPC分类号： H01L21/67 ,  H01L21/306 ,  H01L21/677 ,  H01L21/673

摘要： A substrate liquid processing apparatus includes a placing unit which places thereon a substrate; a liquid processing unit which processes the substrate by immersing the substrate in a processing liquid with a posture in which a plate surface of the substrate is perpendicular to a horizontal direction; a transfer unit which transfers the substrate between the placing unit and the liquid processing unit; and a rotating unit which rotates the substrate, after being subjected to a first processing by the liquid processing unit, around an axis perpendicular to the plate surface, and in a direction different from that when the first processing is performed. Further, the transfer unit transfers the substrate, after being subjected to the first processing, to the rotating unit and transfers the rotated substrate to the liquid processing unit. The liquid processing unit performs a second processing by immersing the rotated substrate in the processing liquid.

公开(公告)号：US20170025268A1

公开(公告)日：2017-01-26

申请号：US15209136

申请日：2016-07-13

申请人： Tokyo Electron Limited

发明人： Hironobu Hyakutake ,  Takafumi Tsuchiya ,  Koichiro Kanzaki

IPC分类号： H01L21/02

CPC分类号： G03F7/423 ,  H01L21/67028 ,  H01L21/67086 ,  H01L21/67253

摘要： Disclosed is a substrate liquid processing apparatus including: a processing bath in which a processing liquid is stored; a chemical liquid component supply unit that supplies chemical liquid components; a concentration detecting unit that detects a concentration of the chemical liquid components; and a controller configured to perform a first control as a feedback control that replenishes the processing liquid with the chemical liquid components such that the concentration of the chemical liquid components contained in the processing liquid within the processing bath does not become less than a predetermined allowable lower limit, based on the concentration of the chemical liquid components detected by the concentration detecting unit. In addition, the controller performs a second control that replenishes the processing liquid with the chemical liquid components in a predetermined amount required to offset a reduction in concentration of the chemical liquid components caused by the introduction of the substrate.

摘要翻译： 公开了一种基板液体处理设备，包括：处理液，其中存储有处理液体; 提供化学液体组分的化学液体组分供应单元; 浓度检测单元，其检测所述药液成分的浓度; 以及控制器，被配置为执行作为反馈控制的第一控制，所述反馈控制用所述化学液体成分补充所述处理液体，使得包含在所述处理液中的所述处理液体中的所述化学液体成分的浓度不会变得小于预定的允许下限 基于由浓度检测单元检测到的化学液体成分的浓度。 此外，控制器进行第二控制，其中补充处理液的化学液体成分以预定量来补偿由引入基材引起的化学液体成分的浓度的降低。

公开(公告)号：US20210384049A1

公开(公告)日：2021-12-09

申请号：US17088339

申请日：2020-11-03

申请人： Tokyo Electron Limited

发明人： Derek William Bassett ,  Antonio Luis Pacheco Rotondaro ,  Trace Quentin Hurd ,  Hironobu Hyakutake ,  Kazuyoshi Mizumoto ,  Nobuaki Matsumoto

IPC分类号： H01L21/67

摘要： A wet etch system comprises an etching bath comprising an etching solution in a process tank inside an overflow tank flowing over an open top into the overflow tank. The etching bath has a top cover, a gas inlet, and a gas outlet above the etching solution. A gas flow system pumps inert gas into the gas inlet and extracts the gas through the gas outlet under positive pressure. The gas flow system may also bubble inert gas through the etching solution via injectors of a gas sparger in the process tank. A recirculation path connects a liquid outlet port coupled to the overflow tank to a liquid inlet port coupled to the process tank. A pump drives the etching solution to flow from the overflow tank, through a degasser in the recirculation path, back into the process tank, and overflow from the process tank into the overflow tank.

公开(公告)号：US11915947B2

公开(公告)日：2024-02-27

申请号：US17644378

申请日：2021-12-15

申请人： Tokyo Electron Limited

发明人： Takumi Honda ,  Koji Yamashita ,  Shinji Tahara ,  Hironobu Hyakutake

IPC分类号： H01L21/67 ,  H01L21/673 ,  H01L21/02 ,  H01L21/306

CPC分类号： H01L21/67086 ,  H01L21/02057 ,  H01L21/30604 ,  H01L21/67057 ,  H01L21/67173 ,  H01L21/67253 ,  H01L21/67313 ,  H01L21/67326

摘要： Substrates can be suppressed from being separated from supporting grooves. A substrate processing apparatus includes a substrate holding unit and a processing tub. The substrate holding unit is configured to hold multiple substrates. The processing tub is configured to store a processing liquid therein. The substrate holding unit comprises a supporting body, an elevating device and a restriction unit. The supporting body has multiple supporting grooves and is configured to support the multiple substrates with a vertically standing posture from below in the multiple supporting grooves, respectively. The elevating device is configured to move the supporting body between a standby position above the processing tub and a processing position within the processing tub. The restriction unit is configured to be moved up and down along with the supporting body by the elevating device and configured to restrict an upward movement of the substrates with respect to the supporting body.

公开(公告)号：US11087992B2

公开(公告)日：2021-08-10

申请号：US16778267

申请日：2020-01-31

申请人： Tokyo Electron Limited

发明人： Tsukasa Hirayama ,  Takao Inada ,  Hironobu Hyakutake ,  Kazuya Koyama ,  Hisashi Kawano

IPC分类号： H01L21/311 ,  H01L21/3213 ,  H01L21/306 ,  B08B3/08 ,  H01L21/67 ,  H01L21/02

摘要： An etching method includes a first etching step, a processing step, and a second etching step. The first etching step is performed to etch a substrate on which a silicon oxide film and a silicon nitride film are formed with an etching liquid. The processing step is performed to process a pattern in the silicon oxide film on the substrate with a pattern shape processing liquid after the first etching step. The second etching step is performed to etch the substrate with the etching liquid after the processing step.

公开(公告)号：US10458010B2

公开(公告)日：2019-10-29

申请号：US15216868

申请日：2016-07-22

申请人： Tokyo Electron Limited

发明人： Hironobu Hyakutake ,  Takafumi Tsuchiya ,  Koichiro Kanzaki

IPC分类号： C23C2/04 ,  H01L21/67 ,  G03F7/42

摘要： Disclosed is a substrate liquid processing apparatus including: a processing bath in which a mixture of sulfuric acid and hydrogen peroxide is stored, and a substrate is immersed in the stored mixture such that a processing is performed on the substrate; an outer bath configured to receive the mixture flowing out from the processing bath; a circulation line configured to return the mixture in the outer bath to the processing bath; a sulfuric acid supply unit configured to supply sulfuric acid to the mixture; a first hydrogen peroxide supply unit configured to supply hydrogen peroxide to the mixture in the outer bath; and a second hydrogen peroxide supply unit configured to supply hydrogen peroxide to the mixture flowing through a downstream portion of the circulation line.

公开(公告)号：US20220108898A1

公开(公告)日：2022-04-07

申请号：US17644378

申请日：2021-12-15

申请人： Tokyo Electron Limited

发明人： Takumi Honda ,  Koji Yamashita ,  Shinji Tahara ,  Hironobu Hyakutake

IPC分类号： H01L21/67 ,  H01L21/673 ,  H01L21/02 ,  H01L21/306

摘要： Substrates can be suppressed from being separated from supporting grooves. A substrate processing apparatus includes a substrate holding unit and a processing tub. The substrate holding unit is configured to hold multiple substrates. The processing tub is configured to store a processing liquid therein. The substrate holding unit comprises a supporting body, an elevating device and a restriction unit. The supporting body has multiple supporting grooves and is configured to support the multiple substrates with a vertically standing posture from below in the multiple supporting grooves, respectively. The elevating device is configured to move the supporting body between a standby position above the processing tub and a processing position within the processing tub. The restriction unit is configured to be moved up and down along with the supporting body by the elevating device and configured to restrict an upward movement of the substrates with respect to the supporting body.

公开(公告)号：US11075096B2

公开(公告)日：2021-07-27

申请号：US16675551

申请日：2019-11-06

申请人： Tokyo Electron Limited

发明人： Takao Inada ,  Hironobu Hyakutake ,  Hisashi Kawano

IPC分类号： H01L21/67 ,  H01L21/677 ,  H01L21/311

摘要： A substrate processing method includes etching a substrate on which a silicon oxide film and a silicon nitride film are formed with a phosphoric acid processing liquid. In the etching, a silicon concentration in the phosphoric acid processing liquid is a first silicon concentration at which the silicon oxide film is etched, from a start time until a first time interval has elapsed.

公开(公告)号：US10928732B2

公开(公告)日：2021-02-23

申请号：US15209136

申请日：2016-07-13

申请人： Tokyo Electron Limited

发明人： Hironobu Hyakutake ,  Takafumi Tsuchiya ,  Koichiro Kanzaki

IPC分类号： G03F7/42 ,  H01L21/67

摘要： Disclosed is a substrate liquid processing apparatus including: a processing bath in which a processing liquid is stored; a chemical liquid component supply unit that supplies chemical liquid components; a concentration detecting unit that detects a concentration of the chemical liquid components; and a controller configured to perform a first control as a feedback control that replenishes the processing liquid with the chemical liquid components such that the concentration of the chemical liquid components contained in the processing liquid within the processing bath does not become less than a predetermined allowable lower limit, based on the concentration of the chemical liquid components detected by the concentration detecting unit. In addition, the controller performs a second control that replenishes the processing liquid with the chemical liquid components in a predetermined amount required to offset a reduction in concentration of the chemical liquid components caused by the introduction of the substrate.

公开(公告)号：US20180158701A1

公开(公告)日：2018-06-07

申请号：US15826886

申请日：2017-11-30

申请人： Tokyo Electron Limited

发明人： Hironobu Hyakutake

IPC分类号： H01L21/67 ,  H01L21/306

CPC分类号： H01L21/67086 ,  H01L21/30604 ,  H01L21/67028 ,  H01L21/67057 ,  H01L21/67173 ,  H01L21/67207 ,  H01L21/67303 ,  H01L21/67309 ,  H01L21/67718 ,  H01L21/67757 ,  H01L21/67766 ,  H01L21/67781

摘要： A substrate liquid processing apparatus includes a placing unit which places thereon a substrate; a liquid processing unit which processes the substrate by immersing the substrate in a processing liquid with a posture in which a plate surface of the substrate is perpendicular to a horizontal direction; a transfer unit which transfers the substrate between the placing unit and the liquid processing unit; and a rotating unit which rotates the substrate, after being subjected to a first processing by the liquid processing unit, around an axis perpendicular to the plate surface, and in a direction different from that when the first processing is performed. Further, the transfer unit transfers the substrate, after being subjected to the first processing, to the rotating unit and transfers the rotated substrate to the liquid processing unit. The liquid processing unit performs a second processing by immersing the rotated substrate in the processing liquid.