SUBSTRATE PROCESSING APPARATUS
    3.
    发明申请
    SUBSTRATE PROCESSING APPARATUS 审中-公开
    基板加工设备

    公开(公告)号:US20140283887A1

    公开(公告)日:2014-09-25

    申请号:US14293324

    申请日:2014-06-02

    CPC classification number: H01L21/67057 H01L21/67028

    Abstract: There is provided a substrate processing apparatus including: a cleaning tank configured to clean a target substrate; a drying chamber configured to communicate with an upper area of the cleaning tank and dry the target substrate picked up from the cleaning tank; a first drying gas supply unit configured to supply a first drying gas containing vapor of a solvent for removing a liquid; a second drying gas supply unit configured to supply a second drying gas not containing the vapor of the solvent for removing the liquid; a substrate holder configured to pick up the target substrate from the cleaning tank and transfer the target substrate to the drying chamber; and a controller configured to output a control signal to alternately supply the first drying gas and the second drying gas.

    Abstract translation: 提供了一种基板处理装置,包括:清洗槽,其构造成清洁目标基板; 干燥室,其构造成与清洗槽的上部区域连通并干燥从清洗槽取出的目标基板; 第一干燥气体供给单元,其构造成供给包含用于除去液体的溶剂的蒸气的第一干燥气体; 第二干燥气体供给单元,其构造为供给不含溶剂蒸气的第二干燥气体,以除去液体; 衬底保持器,其构造成从所述清洁槽拾取所述目标衬底并将所述目标衬底转移到所述干燥室; 以及控制器,被配置为输出控制信号以交替地供应第一干燥气体和第二干燥气体。

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