Resist resin
    25.
    发明授权
    Resist resin 有权
    抵抗树脂

    公开(公告)号:US07119156B2

    公开(公告)日:2006-10-10

    申请号:US10937313

    申请日:2004-09-10

    IPC分类号: G03F7/04

    摘要: According to the present invention, a resist resin having in its structure a specific bridged-bond-containing aliphatic ring, and a resist composition comprising the same are provided. By using this resist composition, a resist pattern excellent in both transparency against short-wavelength light and dry-etching resistance can be formed by alkali development with high resolution.

    摘要翻译: 根据本发明,提供了具有特定含桥连键的脂肪族环的结构的抗蚀剂树脂和包含该抗蚀剂树脂的抗蚀剂组合物。 通过使用该抗蚀剂组合物,可以通过高分辨率的碱显影形成对短波长光的透明性和耐干蚀刻性优异的抗蚀剂图案。

    Photo-sensitive composition
    29.
    发明授权
    Photo-sensitive composition 失效
    光敏组合物

    公开(公告)号:US5863699A

    公开(公告)日:1999-01-26

    申请号:US728388

    申请日:1996-10-09

    IPC分类号: G03F7/004 G03F7/039

    摘要: A photosensitive composition for forming a pattern through a light-exposure with either one of ArF excimer laser and F.sub.2 excimer laser, which comprises a compound having either an acid-decomposable or acid-crosslinkable group, and a compound represented by the following general formula (1): ##STR1## wherein Ar.sup.1 and Ar.sup.2 are individually an aromatic ring or condensed aromatic ring, R.sup.1 and R.sup.2 are individually halogen atoms or monovalent organic group, X is a group selected from the group consisting of CF.sub.3 SO.sub.3, CH.sub.3 SO.sub.3, CF.sub.3 COOH, ClO.sub.4, SbF.sub.6 and AsF.sub.6, Z is a group selected from the group consisting of Cl, Br, I, S--R and Se--R (R is an alkyl group having 1 to 10 carbon atoms or perfluoroalkyl group having 1 to 10 carbon atoms), and m and n are 0 or a positive integer.

    摘要翻译: 用ArF受激准分子激光器和F2准分子激光器中的任一种通过曝光形成图案的光敏组合物,其包含具有酸分解性或酸交联性基团的化合物和由以下通式表示的化合物 1):其中Ar1和Ar2分别为芳环或稠合芳环,R1和R2分别为卤素原子或一价有机基团,X为选自CF 3 SO 3,CH 3 SO 3,CF 3 COOH的基团 ,ClO 4,SbF 6和AsF 6,Z为选自Cl,Br,I,SR和Se-R(R为碳原子数1〜10的烷基或碳原子数1〜10的全氟烷基) ,m和n为0或正整数。