公开(公告)号：US06323415B1

公开(公告)日：2001-11-27

申请号：US09398043

申请日：1999-09-17

申请人： Tsuyoshi Uematsu ,  Terunori Warabisako ,  Yoshiaki Yazawa ,  Yoshinori Miyamura ,  Ken Tsutsui ,  Shin-ichi Muramatsu ,  Hiroyuki Ohtsuka ,  Junko Minemura

发明人： Tsuyoshi Uematsu ,  Terunori Warabisako ,  Yoshiaki Yazawa ,  Yoshinori Miyamura ,  Ken Tsutsui ,  Shin-ichi Muramatsu ,  Hiroyuki Ohtsuka ,  Junko Minemura

IPC分类号： H01L2500

CPC分类号： B32B17/10788 ,  B32B17/10018 ,  H01L31/048 ,  H01L31/0543 ,  H01L31/0547 ,  H02S20/32 ,  H02S30/20 ,  Y02E10/52

摘要： A light concentrator photovoltaic module includes a medium having a light receiving plane, a plurality of photovoltaic elements arranged in a spaced relationship with the light receiving plane, and a light reflecting plane for conducting light incident upon the light receiving plane but is not directly received by the photovoltaic elements to the photovoltaic elements. The light reflecting plane has a structure as viewed on a cross section in a plane transverse to the module light receiving plane and traversing adjacent two photovoltaic elements and a light reflecting member therebetween such that the light reflecting plane includes, at least two first inclined planes and at least two second inclined planes, the first inclined planes being rightwardly ascending while the second inclined planes are leftwardly ascending, respectively, at least two first inclined planes being arranged on a right side of a middle point of a distance between the adjacent two photovoltaic elements while at least two second inclined planes being arranged on a left side of the middle point.

摘要翻译： 光聚光光伏模块包括具有光接收平面的介质，与光接收平面间隔开的多个光电元件，以及用于传导入射在光接收平面上的光的光反射平面，但不直接由光接收平面 光伏元件到光电元件。 光反射面具有在与模块用光接收面相交的平面的横截面上观察的结构，并横过相邻的两个光电元件和其间的光反射部件，使得光反射面包括至少两个第一倾斜面和 至少两个第二倾斜平面，第一倾斜平面分别向右上升，而第二倾斜平面分别向上升起，至少两个第一倾斜平面布置在相邻的两个光电元件之间的距离的中点的右侧 而至少两个第二倾斜平面布置在中间点的左侧。

公开(公告)号：US06294723B1

公开(公告)日：2001-09-25

申请号：US09256454

申请日：1999-02-23

申请人： Tsuyoshi Uematsu ,  Terunori Warabisako ,  Yoshiaki Yazawa ,  Yoshinori Miyamura ,  Ken Tsutsui ,  Shin-ichi Muramatsu ,  Hiroyuki Ohtsuka ,  Junko Minemura

发明人： Tsuyoshi Uematsu ,  Terunori Warabisako ,  Yoshiaki Yazawa ,  Yoshinori Miyamura ,  Ken Tsutsui ,  Shin-ichi Muramatsu ,  Hiroyuki Ohtsuka ,  Junko Minemura

IPC分类号： H01L310232

摘要： Disclosed is a photovoltaic module including a plurality of concentrators each having a light-incident plane and a reflection plane, and photo detectors. Each photo detector is in contact with one of the concentrators. The module is capable of effectively trapping light and effectively generating power throughout the year even if the module is established such that sunlight at the equinoxes is made incident on the light-incident planes not in a perpendicular manner but instead obliquely, for example, in the case where the module is established in contact with a curved plane of a roof, or the like. In this module, each concentrator is formed into such a shape as to satisfy a relationship in which the light trapping efficiency of first incident light tilted rightwardly from the normal line of the light-incident plane in the cross-section including the light-incident plane, reflection plane and photo detector is larger than the light trapping efficiency of second incident light tilted leftwardly from the normal line in the above cross-section. Also, these concentrators are arranged in one direction.

公开(公告)号：US20120025196A1

公开(公告)日：2012-02-02

申请号：US13263122

申请日：2010-01-18

申请人： Yasuo Wada ,  Toru Toyabe ,  Ken Tsutsui

发明人： Yasuo Wada ,  Toru Toyabe ,  Ken Tsutsui

IPC分类号： H01L51/10

CPC分类号： H01L51/002 ,  H01L51/0541 ,  H01L51/0545 ,  H01L51/105

摘要： An organic thin film transistor includes an organic semiconductor layer, a source electrode and a drain electrode which are separated from each other and are individually in contact with the organic semiconductor layer, a gate insulating film which is in contact with the organic semiconductor layer between the source and drain electrodes, and a gate electrode which is opposed to the organic semiconductor layer and is in contact with the gate insulating film. In the organic thin film transistor, a high-concentration region of the organic semiconductor layer which is located near the source electrode has an impurity concentration set higher than an impurity concentration of a low-concentration region of the organic semiconductor layer, the low-concentration region being located near the gate electrode in the thickness direction of the organic semiconductor layer between the source and drain electrodes.

摘要翻译： 有机薄膜晶体管包括彼此分离并分别与有机半导体层接触的有机半导体层，源电极和漏电极，在有机半导体层之间与有机半导体层接触的栅极绝缘膜 源极和漏极以及与有机半导体层相对并与栅极绝缘膜接触的栅电极。 在有机薄膜晶体管中，位于源电极附近的有机半导体层的高浓度区域的杂质浓度设定为高于有机半导体层的低浓度区域的杂质浓度，低浓度 区域位于源极和漏极之间的有机半导体层的厚度方向上的栅电极附近。

公开(公告)号：US06461947B1

公开(公告)日：2002-10-08

申请号：US09657358

申请日：2000-09-07

申请人： Tsuyoshi Uematsu ,  Yoshiaki Yazawa ,  Hiroyuki Ohtsuka ,  Ken Tsutsui

发明人： Tsuyoshi Uematsu ,  Yoshiaki Yazawa ,  Hiroyuki Ohtsuka ,  Ken Tsutsui

IPC分类号： H01L3118

CPC分类号： H01L31/1804 ,  H01L27/1421 ,  H01L31/068 ,  H01L31/0684 ,  H01L31/1876 ,  Y02E10/547 ,  Y02P70/521

摘要： To form an impurity diffusion layer on only one side of a semiconductor substrate at least one semiconductor substrate and at least one diffusion protecting plate are put close to each other and a first impurity diffusion is perfomed on them, or at least one semiconductor substrate and at least one diffusion protecting plate are put close to each other and a first impurity diffusion is performed on them and then the semiconductor substrate and the diffusion protecting plate are arranged such that those sides on which the impurity diffusion has been performed face each other and a second impurity diffusion is performed. The diffusion protecting plate may be replaced by a semiconductor substrate. The first and second impurity diffusions may be performed using an impurity of the same conductivity type.

摘要翻译： 为了仅在半导体衬底的一侧形成杂质扩散层，至少一个半导体衬底和至少一个扩散保护板彼此靠近并且在其上或第一杂质扩散部分上形成第一杂质扩散，或至少一个半导体衬底 将至少一个扩散保护板彼此靠近并对其进行第一杂质扩散，然后将半导体衬底和扩散保护板布置成使得已经进行了杂质扩散的那些侧面彼此面对，并且将第二 进行杂质扩散。 扩散保护板可以由半导体衬底代替。 第一和第二杂质扩散可以使用相同导电类型的杂质进行。

公开(公告)号：US5200634A

公开(公告)日：1993-04-06

申请号：US803798

申请日：1991-12-09

申请人： Toshihisa Tsukada ,  Yoshiyuki Kaneko ,  Hideaki Yamamoto ,  Norio Koike ,  Ken Tsutsui ,  Haruo Matsumaru ,  Yasuo Tanaka

发明人： Toshihisa Tsukada ,  Yoshiyuki Kaneko ,  Hideaki Yamamoto ,  Norio Koike ,  Ken Tsutsui ,  Haruo Matsumaru ,  Yasuo Tanaka

IPC分类号： H01L27/146 ,  H01L31/113 ,  H04N1/031

CPC分类号： H04N1/02805 ,  H01L27/14643 ,  H01L31/1136 ,  H04N1/0313 ,  H04N1/0316

摘要： A thin film phototransistor is provided having a field effect transistor structure where at least one end of the gate electrode is not overlapped with an electrode neighboring the end. Such a thin film phototransistor has: (1) a function as a photosensor and a switching function; (2) a high input impedance; (3) a voltage control function; and (4) a high photocurrent ON/OFF ratio. This thin film phototransistor can be used independently or together with a thin film transistor for picture elements of a one-dimensional or two-dimensional photosensor array, producing satisfactory results.

摘要翻译： 提供具有场效应晶体管结构的薄膜光电晶体管，其中栅电极的至少一端不与邻近端的电极重叠。 这种薄膜光电晶体管具有：（1）作为光电传感器和开关功能的功能; （2）高输入阻抗; （3）电压控制功能; 和（4）高光电流ON / OFF比。 该薄膜光电晶体管可以单独使用或与一维或二维光电传感器阵列的图像元素的薄膜晶体管一起使用，产生令人满意的结果。

公开(公告)号：US4990981A

公开(公告)日：1991-02-05

申请号：US296811

申请日：1989-01-13

申请人： Yasuo Tanaka ,  Haruo Matsumaru ,  Hideaki Yamamoto ,  Toshihisa Tsukada ,  Ken Tsutsui ,  Yoshiyuki Kaneko

发明人： Yasuo Tanaka ,  Haruo Matsumaru ,  Hideaki Yamamoto ,  Toshihisa Tsukada ,  Ken Tsutsui ,  Yoshiyuki Kaneko

IPC分类号： G02F1/136 ,  G02F1/1368 ,  H01L29/786

CPC分类号： G02F1/1368 ,  H01L29/78633 ,  H01L29/78669

摘要： A thin film transistor is disclosed, which comprises a gate electrode, a gate insulating layer, a semiconductor layer, a source electrode, and a drain electrode, which are disposed on a predetermined substrate, and which is so constructed that the semiconductor layer doesn't exist in any regions, to which strong electric field parallel to said substrate is applied. Besides this thin film transistor a liquid crystal display device using it is disclosed. The thin film transistor according to the present invention has a small increase in the off level current due to photo-current and it is suitable for driving pixels in the liquid crystal display device.

摘要翻译： 公开了一种薄膜晶体管，其包括设置在预定衬底上的栅电极，栅极绝缘层，半导体层，源电极和漏电极，并且其构造使得半导体层不是“ 存在于与所述基板平行的强电场的任何区域中。 除此之外，还公开了使用该薄膜晶体管的液晶显示装置。 根据本发明的薄膜晶体管由于光电流而导致的关断电平的增加很小，并且适用于驱动液晶显示装置中的像素。