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    SEMICONDUCTOR MEMORY DEVICE
    21.
    发明公开
    SEMICONDUCTOR MEMORY DEVICE 审中-公开

    公开(公告)号：US20230225120A1

    公开(公告)日：2023-07-13

    申请号：US17676209

    申请日：2022-02-20

    Applicant: UNITED MICROELECTRONICS CORP.

    Inventor： Yu-Jen Yeh ,  Hung-Hsun Shuai ,  Chih-Jung Chen

    IPC: H01L27/11524 ,  H01L27/11558 ,  H01L29/66 ,  H01L29/423

    CPC classification number: H01L27/11524 ,  H01L27/11558 ,  H01L29/66825 ,  H01L29/42328

    Abstract: A memory cell includes a substrate, a floating gate on the substrate, a control gate on the floating gate, a first dielectric layer between the floating gate and the control gate, an erase gate merged with the control gate and disposed on a first sidewall of the floating gate, a second dielectric layer between the floating gate and the erase gate, a select gate on an opposite second sidewall of the floating gate, a spacer between the select gate and the control gate and between the select gate and the floating gate, a source doping region in the substrate and adjacent to the first sidewall of the floating gate, and a drain doping region in the substrate and adjacent to the select gate.

    Semiconductor memory device and manufacturing method thereof
    23.
    发明授权
    Semiconductor memory device and manufacturing method thereof 有权

    公开(公告)号：US11456305B2

    公开(公告)日：2022-09-27

    申请号：US17005285

    申请日：2020-08-27

    Applicant: UNITED MICROELECTRONICS CORP.

    Inventor： Chih-Jung Chen ,  Hung-Hsun Shuai

    IPC: H01L21/00 ,  H01L27/11521 ,  H01L27/11565 ,  H01L27/11519 ,  H01L27/11568

    Abstract: A semiconductor memory device includes a substrate, an isolation layer, a trench, a semiconductor active structure, and a floating gate electrode. The isolation layer is disposed on the substrate. The trench penetrates through the isolation layer and exposes a part of the substrate. The semiconductor active structure is disposed in the trench, and the floating gate electrode is disposed on the semiconductor active structure. A manufacturing method of the semiconductor memory device includes the following steps. The isolation layer is formed on the substrate. The trench is formed penetrating through the isolation layer and exposing a part of the substrate. The semiconductor active structure is formed in the trench. The floating gate electrode is formed on the semiconductor active structure.

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