公开(公告)号：US20160020582A1

公开(公告)日：2016-01-21

申请号：US14334770

申请日：2014-07-18

Applicant: Wisconsin Alumni Research Foundation

Inventor： Zhenqiang Ma ,  Jung-Hun Seo

IPC: H01S5/187 ,  H01S5/042 ,  H01S5/42 ,  H01S5/183 ,  G02B5/28 ,  G02B1/02

CPC classification number: H01S5/187 ,  H01S5/042 ,  H01S5/183 ,  H01S5/18358 ,  H01S5/18372 ,  H01S5/1838 ,  H01S5/327 ,  H01S5/343 ,  H01S5/423

Abstract: Ultra compact DBRs, VCSELs incorporating the DBRs and methods for making the DBRs are provided. The DBRs are composed of a vertical reflector stack comprising a plurality of adjacent layer pairs, wherein each layer pair includes a layer of single-crystalline Group IV semiconductor and an adjacent layer of silicon dioxide.

Abstract translation: 提供超小型DBR，并入DBR的VCSEL和用于制作DBR的方法。 DBR由包括多个相邻层对的垂直反射器堆叠构成，其中每个层对包括单晶IV族半导体层和相邻的二氧化硅层。

公开(公告)号：US20140209977A1

公开(公告)日：2014-07-31

申请号：US13751477

申请日：2013-01-28

Applicant: WISCONSIN ALUMNI RESEARCH FOUNDATION

Inventor： Zhenqiang Ma ,  Jung-Hun Seo ,  Max G. Lagally

IPC: H01L29/32

CPC classification number: H01L29/32 ,  H01L29/66742 ,  H01L29/7849 ,  H01L29/786 ,  H01L29/78603 ,  H01L29/78687 ,  H01L29/78696

Abstract: Semiconductor trilayer structures that are doped and strained are provided. Also provided are mechanically flexible transistors, including radiofrequency transistors, incorporating the trilayer structures and methods for fabricating the trilayer structures and transistors. The trilayer structures comprise a first layer of single-crystalline semiconductor material, a second layer of single-crystalline semiconductor material and a third layer of single-crystalline semiconductor material. In the structures, the second layer is in contact with and sandwiched between the first and third layers and the first layer is selectively doped to provide one or more doped regions in the layer.

Abstract translation: 提供掺杂和应变的半导体三层结构。 还提供了机械灵活的晶体管，包括射频晶体管，结合三层结构和制造三层结构和晶体管的方法。 三层结构包括第一层单晶半导体材料，第二层单晶半导体材料和第三层单晶半导体材料。 在结构中，第二层与第一和第三层接触并夹在第一和第三层之间，并且第一层被选择性地掺杂以在该层中提供一个或多个掺杂区域。

公开(公告)号：US20140134793A1

公开(公告)日：2014-05-15

申请号：US13892446

申请日：2013-05-13

Applicant: Wisconsin Alumni Research Foundation

Inventor： Xudong Wang ,  Zhenqiang Ma ,  Fei Wang ,  Jung-Hun Seo

IPC: H01L21/02

CPC classification number: H01L21/02628 ,  C30B7/14 ,  C30B29/16 ,  H01L21/02554 ,  H01L21/0259 ,  H01L29/7869 ,  H01L33/28

Abstract: The present invention provides continuous, free-standing metal oxide films and methods for making said films. The methods are able to produce large-area, flexible, thin films having one or more continuous, single-crystalline metal oxide domains. The methods include the steps of forming a surfactant monolayer at the surface of an aqueous solution, wherein the headgroups of the surfactant molecules provide a metal oxide film growth template. When metal ions in the aqueous solution are exposed to the metal oxide film growth template in the presence of hydroxide ions under suitable conditions, a continuous, free-standing metal oxide film can be grown from the film growth template downward into the aqueous solution.

Abstract translation: 本发明提供连续的，独立的金属氧化物膜和制备所述膜的方法。 该方法能够生产具有一个或多个连续的单晶金属氧化物畴的大面积，柔性的薄膜。 所述方法包括在水溶液表面形成表面活性剂单层的步骤，其中表面活性剂分子的头基提供金属氧化物膜生长模板。 当水溶液中的金属离子在合适的条件下在氢氧根离子存在下暴露于金属氧化物膜生长模板时，可以将连续的自立式金属氧化物膜从膜生长模板向下生长到水溶液中。