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61 条记录 (耗时 0.021 秒)

    Magnetoresistive magnetic field sensor structure
    21.
    发明授权
    Magnetoresistive magnetic field sensor structure 有权
    磁阻磁场传感器结构

    公开(公告)号：US08063633B2

    公开(公告)日：2011-11-22

    申请号：US12171185

    申请日：2008-07-10

    申请人： Wolfgang Raberg ,  Juergen Zimmer

    发明人： Wolfgang Raberg ,  Juergen Zimmer

    IPC分类号： G01R33/09 ,  H01L43/08

    CPC分类号： G01R33/093 ,  B82Y25/00 ,  H01L27/22 ,  Y10T29/4902

    摘要： A magnetic field sensor structure including a first magnetoresistive element in a spin-valve arrangement with a first reference layer structure with a first reference magnetization direction and a second magnetoresistive element in a spin-valve arrangement with a second reference layer structure with a second reference magnetization direction, wherein the first and second magnetoresistive elements are arranged in a layer vertically above each other and galvanically isolated from each other by an intermediate layer, and wherein the first and second reference magnetization directions are different.

    摘要翻译： 一种磁场传感器结构，其包括具有第一基准磁化方向的第一参考层结构的自旋阀装置中的第一磁阻元件和具有第二参考层结构的自旋阀装置中的第二磁阻元件，所述第二参考层结构具有第二参考磁化强度 方向，其中所述第一和第二磁阻元件被布置在彼此垂直上方的层中并且通过中间层彼此电隔离，并且其中所述第一和第二参考磁化方向是不同的。

    Silicon MEMS resonator devices and methods
    22.
    发明授权
    Silicon MEMS resonator devices and methods 有权
    硅MEMS谐振器装置及方法

    公开(公告)号：US08049490B2

    公开(公告)日：2011-11-01

    申请号：US12193780

    申请日：2008-08-19

    申请人： Markus Loehndorf ,  Wolfgang Raberg ,  Florian Schoen

    发明人： Markus Loehndorf ,  Wolfgang Raberg ,  Florian Schoen

    IPC分类号： G01R33/09

    CPC分类号： G01R33/09 ,  H03H9/2457 ,  H03H2009/02496

    摘要： Embodiments of the invention are related to MEMS devices and methods. In one embodiment, a MEMS device includes a resonator element comprising a magnetic portion having a fixed magnetization, and at least one sensor element comprising a magnetoresistive portion, wherein a magnetization and a resistivity of the magnetoresistive portion vary according to a proximity of the magnetic portion.

    摘要翻译： 本发明的实施例涉及MEMS器件和方法。 在一个实施例中，MEMS器件包括谐振器元件，其包括具有固定磁化强度的磁性部分和至少一个包括磁阻部分的传感器元件，其中磁阻部分的磁化强度和电阻率根据磁性部分的接近度而变化 。

    Magnetic Encoder Element for Position Measurement
    23.
    发明申请
    Magnetic Encoder Element for Position Measurement 审中-公开
    用于位置测量的磁性编码器元件

    公开(公告)号：US20110101964A1

    公开(公告)日：2011-05-05

    申请号：US12613376

    申请日：2009-11-05

    申请人： Udo Ausserlechner ,  Tobias Werth ,  Peter Slama ,  Juergen Zimmer ,  Wolfgang Raberg ,  Stephan Schmitt ,  Martin Orasch

    发明人： Udo Ausserlechner ,  Tobias Werth ,  Peter Slama ,  Juergen Zimmer ,  Wolfgang Raberg ,  Stephan Schmitt ,  Martin Orasch

    IPC分类号： G01B7/30

    CPC分类号： G01D5/145 ,  G01D5/2457 ,  G01P3/487

    摘要： A magnetic encoder element for use in a position measurement system including a magnetic field sensor for measuring position along a first direction is disclosed. The encoder element includes at least one first track that includes a material providing a magnetic pattern along the first direction, the magnetic pattern being formed by a remanent magnetization vector that has a variable magnitude dependent on a position along the first direction. The gradient of the remanent magnetization vector is such that a resulting magnetic field in a corridor above the first track and at a predefined distance above the plane includes a field component perpendicular to the first direction that does not change its sign along the first direction.

    摘要翻译： 公开了一种用于位置测量系统的磁编码器元件，包括用于沿第一方向测量位置的磁场传感器。 所述编码器元件包括至少一个第一轨道，所述至少一个第一轨道包括沿着所述第一方向提供磁图案的材料，所述磁图案由具有取决于沿所述第一方向的位置的可变幅度的剩余磁化矢量形成。 剩余磁化矢量的梯度使得在第一轨道之上并且在平面上方的预定距离处的通道中产生的磁场包括垂直于第一方向的场分量，其不沿着第一方向改变其符号。

    Memory having cap structure for magnetoresistive junction and method for structuring the same
    25.
    发明授权
    Memory having cap structure for magnetoresistive junction and method for structuring the same 失效
    具有用于磁阻结的帽结构的存储器及其结构化方法

    公开(公告)号：US07602032B2

    公开(公告)日：2009-10-13

    申请号：US11117854

    申请日：2005-04-29

    申请人： Ulrich Klostermann ,  Chanro Park ,  Wolfgang Raberg

    发明人： Ulrich Klostermann ,  Chanro Park ,  Wolfgang Raberg

    IPC分类号： H01L29/82

    CPC分类号： G11C11/15 ,  H01L43/08 ,  H01L43/12

    摘要： A memory and method of making a memory is disclosed. In one embodiment, the memory includes a cap structure for a magnetoresistive random access memory device including an etch stop layer formed over an upper magnetic layer of a magnetoresistive junction (MTJ/MCJ) layered structure and a hardmask layer formed over said etch stop layer, wherein said etch stop layer is selected from a material such that an etch chemistry used for removing said hardmask layer has selectivity against etching said etch stop layer material. In a method of opening the hardmask layer, an etch process to remove exposed portions of the hardmask layer is implemented, where the etch process terminates on the etch stop layer.

    摘要翻译： 公开了一种存储器和制造存储器的方法。 在一个实施例中，存储器包括用于磁阻随机存取存储器件的盖结构，其包括形成在磁阻结（MTJ / MCJ）分层结构的上磁层上的蚀刻停止层和形成在所述蚀刻停止层上的硬掩模层， 其中所述蚀刻停止层选自材料，使得用于去除所述硬掩模层的蚀刻化学性质对蚀刻所述蚀刻停止层材料具有选择性。 在打开硬掩模层的方法中，实现去除硬掩模层的暴露部分的蚀刻工艺，其中蚀刻工艺在蚀刻停止层上终止。

    Method for writing to magnetoresistive memory cells and magnetoresistive memory which can be written to by the method
    27.
    发明授权
    Method for writing to magnetoresistive memory cells and magnetoresistive memory which can be written to by the method 失效
    用于写入可通过该方法写入的磁阻存储器单元和磁阻存储器的方法

    公开(公告)号：US07408803B2

    公开(公告)日：2008-08-05

    申请号：US10642856

    申请日：2003-08-18

    申请人： Martin Freitag ,  Stefan Miethaner ,  Wolfgang Raberg

    发明人： Martin Freitag ,  Stefan Miethaner ,  Wolfgang Raberg

    IPC分类号： G11C11/00

    CPC分类号： G11C11/1675

    摘要： A method for writing to the magnetoresistive memory cells of a MRAM memory, includes applying write currents respectively onto a word line and a bit line. A superposition of the magnetic fields generated by the write currents in each memory cell selected by the corresponding word lines and bits lines alter a direction of the magnetization thereof. According to the method, the write currents are applied in a chronologically offset manner, to the corresponding word line and the bit line whereby the direction of magnetization of the selected memory cell is rotated in several consecutive steps in the desired direction for writing a logical “0” or “1”.

    摘要翻译： 一种用于写入MRAM存储器的磁阻存储单元的方法，包括分别将写入电流施加到字线和位线上。 由相应的字线和位线选择的每个存储单元中的写入电流产生的磁场的叠加改变了其磁化方向。 根据该方法，以时间顺序偏移的方式将写入电流施加到对应的字线和位线，由此所选择的存储器单元的磁化方向在所需方向上以几个连续的步骤旋转，以写入逻辑“ 0“或”1“。

    Method for writing to magnetoresistive memory cells and magnetoresistive memory which can be written to by the method
    28.
    发明申请
    Method for writing to magnetoresistive memory cells and magnetoresistive memory which can be written to by the method 失效
    用于写入可通过该方法写入的磁阻存储器单元和磁阻存储器的方法

    公开(公告)号：US20060171196A1

    公开(公告)日：2006-08-03

    申请号：US10642856

    申请日：2003-08-18

    申请人： Martin Freitag ,  Stefan Miethaner ,  Wolfgang Raberg

    发明人： Martin Freitag ,  Stefan Miethaner ,  Wolfgang Raberg

    IPC分类号： G11C11/00

    CPC分类号： G11C11/1675

    摘要： A method for writing to the magnetoresistive memory cells of a MRAM memory, includes applying write currents respectively onto a word line and a bit line. A superposition of the magnetic fields generated by the write currents in each memory cell selected by the corresponding word lines and bits lines alter a direction of the magnetization thereof. According to the method, the write currents are applied in a chronologically offset manner, to the corresponding word line and the bit line whereby the direction of magnetization of the selected memory cell is rotated in several consecutive steps in the desired direction for writing a logical “0” or “1”.

    摘要翻译： 一种用于写入MRAM存储器的磁阻存储单元的方法，包括分别将写入电流施加到字线和位线上。 由相应的字线和位线选择的每个存储单元中的写入电流产生的磁场的叠加改变了其磁化方向。 根据该方法，以时间顺序偏移的方式将写入电流施加到对应的字线和位线，由此所选择的存储器单元的磁化方向在所需方向上以几个连续的步骤旋转，以写入逻辑“ 0“或”1“。

    Method for producing an annular microstructure element
    29.
    发明申请
    Method for producing an annular microstructure element 有权
    环形微结构元件的制造方法

    公开(公告)号：US20050250344A1

    公开(公告)日：2005-11-10

    申请号：US11112743

    申请日：2005-04-22

    申请人： Alfred Kersch ,  Wolfgang Raberg ,  Siegfried Schwarzl

    发明人： Alfred Kersch ,  Wolfgang Raberg ,  Siegfried Schwarzl

    IPC分类号： H01F41/30 ,  H01F41/34 ,  H01L21/00 ,  H01L21/31 ,  H01L21/336 ,  H01L21/469

    CPC分类号： B82Y25/00 ,  B82Y40/00 ,  H01F10/265 ,  H01F41/30 ,  H01F41/308 ,  H01F41/34

    摘要： An annular microstructure element, in particular an annularly arranged monolayer or multilayer thin film, is formed over a substrate (S), e.g., for use in a magnetoresistive memory. To that end, a masking layer is applied over the substrate. An opening (C) is etched into the masking layer, so that a partial region of the surface is uncovered. The etching operation is performed in such a way that the opening (C) is formed with an overhang (B). The overhang at least partially shades the uncovered surface from an incident particle beam (TS). A particle beam (TS) is directed at the substrate (S) at an oblique angle (α) of incidence. In this case, the substrate (S) is rotated relative to the directed particle beam (TS). From the particle beam, material is thereby deposited annularly on the uncovered surface for the purpose of forming a hole-like microstructure element (R).

    摘要翻译： 环形微结构元件，特别是环形布置的单层或多层薄膜，形成在衬底（S）上，例如用于磁阻存储器中。 为此，在衬底上施加掩模层。 将开口（C）蚀刻到掩模层中，使得表面的部分区域不被覆盖。 蚀刻操作以使得开口（C）形成有突出部（B）的方式进行。 突出部分至少部分地遮蔽未被覆盖的表面与入射的粒子束（TS）。 粒子束（TS）以倾斜角（α）入射到基底（S）。 在这种情况下，基板（S）相对于定向粒子束（TS）旋转。 为了形成孔状微结构元件（R），从粒子束中，材料环状地沉积在未覆盖的表面上。