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    Method for writing to magnetoresistive memory cells and magnetoresistive memory which can be written to by the method
    1.
    发明授权
    Method for writing to magnetoresistive memory cells and magnetoresistive memory which can be written to by the method 失效
    用于写入可通过该方法写入的磁阻存储器单元和磁阻存储器的方法

    公开(公告)号：US07408803B2

    公开(公告)日：2008-08-05

    申请号：US10642856

    申请日：2003-08-18

    申请人： Martin Freitag ,  Stefan Miethaner ,  Wolfgang Raberg

    发明人： Martin Freitag ,  Stefan Miethaner ,  Wolfgang Raberg

    IPC分类号： G11C11/00

    CPC分类号： G11C11/1675

    摘要： A method for writing to the magnetoresistive memory cells of a MRAM memory, includes applying write currents respectively onto a word line and a bit line. A superposition of the magnetic fields generated by the write currents in each memory cell selected by the corresponding word lines and bits lines alter a direction of the magnetization thereof. According to the method, the write currents are applied in a chronologically offset manner, to the corresponding word line and the bit line whereby the direction of magnetization of the selected memory cell is rotated in several consecutive steps in the desired direction for writing a logical “0” or “1”.

    摘要翻译： 一种用于写入MRAM存储器的磁阻存储单元的方法，包括分别将写入电流施加到字线和位线上。 由相应的字线和位线选择的每个存储单元中的写入电流产生的磁场的叠加改变了其磁化方向。 根据该方法，以时间顺序偏移的方式将写入电流施加到对应的字线和位线，由此所选择的存储器单元的磁化方向在所需方向上以几个连续的步骤旋转，以写入逻辑“ 0“或”1“。

    Method for writing to magnetoresistive memory cells and magnetoresistive memory which can be written to by the method
    2.
    发明申请
    Method for writing to magnetoresistive memory cells and magnetoresistive memory which can be written to by the method 失效
    用于写入可通过该方法写入的磁阻存储器单元和磁阻存储器的方法

    公开(公告)号：US20060171196A1

    公开(公告)日：2006-08-03

    申请号：US10642856

    申请日：2003-08-18

    申请人： Martin Freitag ,  Stefan Miethaner ,  Wolfgang Raberg

    发明人： Martin Freitag ,  Stefan Miethaner ,  Wolfgang Raberg

    IPC分类号： G11C11/00

    CPC分类号： G11C11/1675

    摘要： A method for writing to the magnetoresistive memory cells of a MRAM memory, includes applying write currents respectively onto a word line and a bit line. A superposition of the magnetic fields generated by the write currents in each memory cell selected by the corresponding word lines and bits lines alter a direction of the magnetization thereof. According to the method, the write currents are applied in a chronologically offset manner, to the corresponding word line and the bit line whereby the direction of magnetization of the selected memory cell is rotated in several consecutive steps in the desired direction for writing a logical “0” or “1”.

    摘要翻译： 一种用于写入MRAM存储器的磁阻存储单元的方法，包括分别将写入电流施加到字线和位线上。 由相应的字线和位线选择的每个存储单元中的写入电流产生的磁场的叠加改变了其磁化方向。 根据该方法，以时间顺序偏移的方式将写入电流施加到对应的字线和位线，由此所选择的存储器单元的磁化方向在所需方向上以几个连续的步骤旋转，以写入逻辑“ 0“或”1“。

    Magnetoresistive memory (MRAM)
    3.
    发明授权
    Magnetoresistive memory (MRAM) 失效
    磁阻记忆体（MRAM）

    公开(公告)号：US06744662B2

    公开(公告)日：2004-06-01

    申请号：US10436428

    申请日：2003-05-12

    申请人： Martin Freitag ,  Dietmar Gogl ,  Heinz Hoenigschmid ,  Stefan Lammers

    发明人： Martin Freitag ,  Dietmar Gogl ,  Heinz Hoenigschmid ,  Stefan Lammers

    IPC分类号： G11C1100

    CPC分类号： H01L27/222 ,  B82Y10/00 ,  G11C11/16

    摘要： The form of leads of a cell array of a multiplicity of magnetic memory cells is optimized by deviating from a square cross section of the leads in such a way that the magnetic field component of the write currents lying in the cell array plane decreases sufficiently rapidly with increasing distance from the crossover point. The cell array is constructed from a matrix of the column leads and the row leads.

    摘要翻译： 多个磁存储器单元的单元阵列的引线的形式通过偏离引线的正方形横截面而被优化，使得位于单元阵列平面中的写入电流的磁场分量充分快速地减小， 增加距离交叉点的距离。 单元阵列由列引线和行引线的矩阵构成。

    MRAM configuration
    6.
    发明授权
    MRAM configuration 失效
    MRAM配置

    公开(公告)号：US06791871B2

    公开(公告)日：2004-09-14

    申请号：US10627904

    申请日：2003-07-25

    申请人： Martin Freitag ,  Thomas Roehr

    发明人： Martin Freitag ,  Thomas Roehr

    IPC分类号： G11C1100

    CPC分类号： H01L27/228 ,  G11C11/16

    摘要： An MRAM configuration has selection transistors and MTJ layer sequences lying in parallel with each other in a memory cell matrix. A considerable space saving can thus be achieved and therefore the MRAM configuration is less expensive to manufacture and has a greater packing density. In addition, the MRAM configuration allows a rapid read access with a minimal area requirement.

    摘要翻译： MRAM配置具有在存储单元矩阵中彼此平行的选择晶体管和MTJ层序列。 因此可以实现相当多的空间节省，因此MRAM配置制造成本较低并且具有更大的包装密度。 此外，MRAM配置允许以最小面积要求进行快速读取访问。

    Injection valves for liquid-fuel mixtures and associated processes
    8.
    发明授权
    Injection valves for liquid-fuel mixtures and associated processes 失效
    液体 - 燃料混合物和相关工艺的注射阀

    公开(公告)号：US5669334A

    公开(公告)日：1997-09-23

    申请号：US535022

    申请日：1995-12-27

    申请人： Dieter Schonfeld ,  Bernhard Bachle ,  Martin Freitag ,  Torsten Guth

    发明人： Dieter Schonfeld ,  Bernhard Bachle ,  Martin Freitag ,  Torsten Guth

    IPC分类号： F02M25/00 ,  F02M25/022 ,  F02M43/04 ,  F02M47/00 ,  F02M47/02 ,  F02M63/02

    CPC分类号： F02M63/0225 ,  F02M43/04 ,  F02M47/027

    摘要： Injection system for the intermittent introduction of a fuel-liquid mixture into the combustion spaces of an internal-combustion engine with a common-rail pressure reservoir. Lines (16, 30) lead to control spaces (15, 22) of control valves (1). Control space (15) is joined selectively with the common-rail pressure reservoir or a line (18) with a pressure p0 or a line with a pressure p1 for control of injection quantities of the fuel-liquid mixture. Control space (22) is joined selectively to the common-rail pressure reservoir or to a line with pressure p2 or to a line (33) with pressure p0 for control of the liquid fraction of the injection quantity.

    摘要翻译： PCT No.PCT / EP95 / 00497 Sec。 371 1995年12月27日第 102（e）日期1995年12月27日PCT提交1995年2月10日PCT公布。 WO95 / 21998 PCT公开号 日期1995年8月17日用燃料液混合物间歇地引入具有共轨压力储存器的内燃机的燃烧空间中的喷射系统。 管路（16,30）通向控制阀（1）的控制空间（15,22）。 控制空间（15）与共轨压力储存器或具有压力p0的管线（18）或具有压力p1的管线（18）选择性地连接，用于控制燃料 - 液体混合物的喷射量。 控制空间（22）选择性地连接到共轨压力储存器或具有压力p2的管线或具有压力p0的管线（33），以控制喷射量的液体部分。

    Intermittent fuel supply injection system and method
    9.
    发明授权
    Intermittent fuel supply injection system and method 失效
    间歇燃油喷射系统及方法

    公开(公告)号：US5526792A

    公开(公告)日：1996-06-18

    申请号：US446573

    申请日：1995-05-19

    申请人： Torsten Guth ,  Martin Freitag ,  Bernhard Baechle ,  Dieter Schoenfeld

    发明人： Torsten Guth ,  Martin Freitag ,  Bernhard Baechle ,  Dieter Schoenfeld

    IPC分类号： F02M47/00 ,  F02M57/02 ,  F02M61/10 ,  F02M39/00 ,  F02M37/04

    CPC分类号： F02M57/025

    摘要： An injection system provides an intermittent supply of fuel mixture into combustion spaces of an internal-combustion engine. The system includes a valve and a pipe by way of which a control space in the injection valves may alternatively be acted upon by a pressure. The control space is formed by a valve member and a piston. A first pressure spring presses the valve member onto an injection opening, and a second pressure spring presses the piston away from the injection opening.

    摘要翻译： 喷射系统提供将燃料混合物间歇地供应到内燃机的燃烧空间中。 该系统包括一个阀门和一个管道，通过该管道，喷射阀中的控制空间可以替代地通过压力作用。 控制空间由阀构件和活塞形成。 第一压力弹簧将阀构件压到注射开口上，而第二压力弹簧将活塞推压离开注射开口。