公开(公告)号：US20220004066A1

公开(公告)日：2022-01-06

申请号：US16754332

申请日：2019-11-11

Applicant: Wuhan China Star Optoelectronics Technology Co., Ltd.

Inventor： Yuan Yan ,  Yong Xu ,  Dewei Song ,  Fei Ai

IPC: G02F1/1362 ,  H01L27/12 ,  G02F1/1343 ,  G02F1/1333 ,  G06F3/041

Abstract: The present disclosure provides an array substrate and a manufacturing method of the array substrate. The method includes sequentially forming an active layer and an insulating layer on a substrate; forming a common electrode layer and a first metal layer on the insulating layer using a same photomask, wherein the common electrode layer includes touch electrodes; and forming a second metal layer on the pixel electrode layer, wherein the second metal layer includes touch signal lines, and the touch signal lines electrically are electrically connected to the touch electrodes.

公开(公告)号：US12300701B2

公开(公告)日：2025-05-13

申请号：US17621257

申请日：2021-12-09

Applicant: Wuhan China Star Optoelectronics Technology Co., Ltd.

Inventor： Fei Ai ,  Dewei Song ,  Chengzhi Luo

IPC: H01L27/12 ,  G02F1/1362

Abstract: An array substrate and a display panel are provided. The array substrate includes a substrate, an array layer, an inorganic insulation layer, a conductive electrode, a passivation layer, and a pixel electrode disposed in sequence. The array layer includes a source electrode and a drain electrode. A first via hole is defined in the array substrate. The first via hole penetrates the passivation layer and the inorganic insulation layer and exposes the drain electrode. The pixel electrode is connected to the drain electrode in the first via hole.

公开(公告)号：US12276888B2

公开(公告)日：2025-04-15

申请号：US17776384

申请日：2022-04-13

Applicant: Wuhan China Star Optoelectronics Technology Co., Ltd.

Inventor： Fan Gong ,  Guanghui Liu ,  Fei Ai ,  Jiyue Song ,  Dewei Song ,  Rui He

IPC: G02F1/1362 ,  G02F1/1335 ,  G02F1/135 ,  G02F1/1368

Abstract: Embodiments of the present disclosure provide a display panel and a display terminal. The display panel includes at least one ultraviolet sensing transistor and at least one control transistor disposed on a substrate, and a color film substrate including a light blocking unit; wherein the ultraviolet sensing transistor includes an ultraviolet absorbing layer, and an orthographic projection of the light blocking unit on the substrate covers an orthographic projection of the ultraviolet absorbing layer on the substrate. According to the embodiment of the present disclosure, the light blocking unit absorbs or blocks the visible lights to prevent the visible lights from entering into the ultraviolet absorbing layer.

公开(公告)号：US12068330B2

公开(公告)日：2024-08-20

申请号：US16966116

申请日：2020-01-17

Applicant: Wuhan China Star Optoelectronics Technology Co., Ltd.

Inventor： Yuan Yan ,  Yong Xu ,  Fei Ai ,  Dewei Song

IPC: H01L27/12 ,  G06F3/041 ,  G06F3/044

CPC classification number: H01L27/124 ,  G06F3/041 ,  G06F3/0412 ,  G06F3/04164 ,  G06F3/0443 ,  H01L27/1288 ,  G06F2203/04103

Abstract: A touch array substrate and a manufacturing method thereof, wherein in the touch array substrate, an active layer, an insulating layer, a pixel electrode layer, a metal layer, a planarization layer, and a common electrode layer are sequentially disposed on the buffer layer. The active layer includes a first region corresponding to a source electrode and a second region corresponding to a drain electrode. The pixel electrode layer includes a plurality of base layers. The metal layer is correspondingly disposed on the base layers. The metal layer includes a touch signal line, a data line, and a gate electrode. The common electrode layer includes a touch electrode, the source electrode, and the drain electrode.

公开(公告)号：US20240222446A1

公开(公告)日：2024-07-04

申请号：US17996787

申请日：2022-08-30

Applicant: WUHAN CHINA STAR OPTOELECTRONICS TECHNOLOGY CO., LTD.

Inventor： Fei Ai ,  Dewei Song

IPC: H01L29/417 ,  H01L29/08 ,  H01L29/49 ,  H01L29/66 ,  H01L29/786

CPC classification number: H01L29/41733 ,  H01L29/0847 ,  H01L29/4908 ,  H01L29/66757 ,  H01L29/66969 ,  H01L29/78675 ,  H01L29/7869

Abstract: The present application provides a thin film transistor and an electronic device. The thin film transistor includes: a crystalline active pattern, wherein the crystalline active pattern includes a channel and two contact portions, and the two contact portions are connected to opposite two sides of the channel in a direction intersecting a thickness direction of the crystalline active pattern; a groove located on at least one of the two contact portions and extending in the thickness direction of the crystalline active pattern; a source electrode and a drain electrode connected to the two contact portions, respectively; and an insulating layer being in contact with the channel.

公开(公告)号：US20240027859A1

公开(公告)日：2024-01-25

申请号：US17607852

申请日：2021-09-08

Applicant: WUHAN CHINA STAR OPTOELECTRONICS TECHNOLOGY CO., LTD.

Inventor： Zhilin Wu ,  Tao Ma ,  Dewei Song ,  Fei Ai

IPC: G02F1/1362 ,  G02F1/1343 ,  G02F1/1333 ,  G02F1/1368

CPC classification number: G02F1/136295 ,  G02F1/136209 ,  G02F1/1343 ,  G02F1/136227 ,  G02F1/13338 ,  G02F1/1368

Abstract: The present application discloses a display panel and an electrical terminal. The display panel includes: an underlay; an array driver layer located on the underlay and including a gate electrode layer and a source and drain electrode layer; a signal line including an adaptor portion located in the non-display region, wherein the adaptor portion includes a first wire section disposed in a same layer with the gate electrode layer, a second wire section disposed in a same layer with the source and drain electrode layer, and a bridge portion electrically connected to the first wire section and the second wire section; wherein the first wire section, the second wire section, and the bridge portion are disposed in different layers.

公开(公告)号：US10964790B1

公开(公告)日：2021-03-30

申请号：US16097838

申请日：2018-09-14

Applicant: Wuhan China Star Optoelectronics Technology Co., Ltd.

Inventor： Yuan Yan ,  Lisheng Li ,  Dewei Song

IPC: H01L29/417 ,  H01L29/66 ,  H01L29/786 ,  H01L27/12 ,  H01L29/45 ,  H01L21/311

Abstract: The present invention teaches a TFT substrate manufacturing method and a TFT substrate. The method configures contact region vias in the source/drain contact regions at two ends of the active layer, provides buffer layer troughs in the buffer layer beneath the contact region vias, and forms undercut structure between the buffer layer troughs and the active layer around the contact region vias, thereby separating the transparent conductive layer at the contact region vias, and extending the source/drain electrodes to contact the source/drain contact regions of the active layer from below through the buffer layer troughs. The present invention therefore prevents the occurrence of Schottky contact barrier resulted from the contact between poly-Si and ITO in the 7-mask process by letting the source/drain electrodes to directly contact and form ohmic contact with the source/drain contact regions of the active layer, thereby enhancing the electronic mobility of TFT devices.