Parameterized dummy cell insertion for process enhancement
    22.
    发明授权
    Parameterized dummy cell insertion for process enhancement 有权
    用于过程增强的参数化虚拟单元插入

    公开(公告)号:US08332797B2

    公开(公告)日:2012-12-11

    申请号:US12959150

    申请日:2010-12-02

    CPC classification number: G06F17/5068 G06F2217/12 G06F2217/80 Y02P90/265

    Abstract: The present disclosure relates to parameterized dummy cell insertion for process enhancement and methods for fabricating the same. In accordance with one or more embodiments, methods include providing an integrated circuit (IC) design layout with defined pixel-units, simulating thermal effect to the IC design layout including each pixel-unit, generating a thermal effect map of the IC design layout including each pixel-unit, determining a target absorption value for the IC design layout, and performing thermal dummy cell insertion to each pixel-unit of the IC design layout based on the determined target absorption value.

    Abstract translation: 本公开涉及用于过程增强的参数化虚拟单元插入及其制造方法。 根据一个或多个实施例,方法包括提供具有定义的像素单元的集成电路(IC)设计布局,模拟包括每个像素单元的IC设计布局的热效应,生成IC设计布局的热效应图,包括 每个像素单元,确定IC设计布局的目标吸收值,并且基于所确定的目标吸收值,向IC设计布局的每个像素单元执行热虚拟单元插入。

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