-
公开(公告)号：US08431291B2
公开(公告)日：2013-04-30
申请号：US13281198
申请日：2011-10-25
申请人： George Liu , Kuei Shun Chen , Chih-Yang Yeh , Te-Chih Huang , Wen-Hao Liu , Ying-Chou Cheng , Boren Luo , Tsong-Hua Ou , Yu-Po Tang , Wen-Chun Huang , Ru-Gun Liu , Shu-Chen Lu , Yu Lun Liu , Yao-Ching Ku , Tsai-Sheng Gau
发明人： George Liu , Kuei Shun Chen , Chih-Yang Yeh , Te-Chih Huang , Wen-Hao Liu , Ying-Chou Cheng , Boren Luo , Tsong-Hua Ou , Yu-Po Tang , Wen-Chun Huang , Ru-Gun Liu , Shu-Chen Lu , Yu Lun Liu , Yao-Ching Ku , Tsai-Sheng Gau
CPC分类号： G06F17/5068 , G03F1/00 , G03F1/68
摘要： An intensity selective exposure photomask, also describes as a gradated photomask, is provided. The photomask includes a first region including a first array of sub-resolution features. The first region blocks a first percentage of the incident radiation. The photomask also includes a second region including a second array of sub-resolution features. The second region blocks a second percentage of the incident radiation different that the first percentage.
摘要翻译： 还提供强度选择性曝光光掩模，还描述为渐变光掩模。 光掩模包括包括第一子分解特征阵列的第一区域。 第一个区域阻止了第一个入射辐射的百分比。 光掩模还包括包括第二子分辨率特征阵列的第二区域。 第二个区域阻止了第二个百分比的入射辐射不同于第一个百分比。
-
公开(公告)号：US20100261118A1
公开(公告)日：2010-10-14
申请号：US12421378
申请日：2009-04-09
申请人： George Liu , Kuei Shun Chen , Chih-Yang Yeh , Te-Chih Huang
发明人： George Liu , Kuei Shun Chen , Chih-Yang Yeh , Te-Chih Huang
摘要： A gradated photomask is provided. The photomask includes a first region including a first plurality of sub-resolution features and a second region including a second plurality of sub-resolution features. The first region blocks a first percentage of the incident radiation. The second region blocks a second percentage of the incident radiation. The first and second percentage are different. An intensity selective exposure method is also provided.
摘要翻译： 提供了分级光掩模。 光掩模包括包括第一多个子分辨率特征的第一区域和包括第二多个子分辨率特征的第二区域。 第一个区域阻止了第一个入射辐射的百分比。 第二个区域阻挡了入射辐射的第二个百分比。 第一和第二个百分比是不同的。 还提供强度选择性曝光方法。
-
公开(公告)号：US08673520B2
公开(公告)日：2014-03-18
申请号：US13046265
申请日：2011-03-11
申请人： George Liu , Kuei Shun Chen , Chih-Yang Yeh , Te-Chih Huang , Wen-Hao Liu , Ying-Chou Cheng , Boren Luo , Tsong-Hua Ou , Yu-Po Tang , Wen-Chun Huang , Ru-Gun Liu , Shu-Chen Lu , Yu Lun Liu , Yao-Ching Ku , Tsai-Sheng Gau
发明人： George Liu , Kuei Shun Chen , Chih-Yang Yeh , Te-Chih Huang , Wen-Hao Liu , Ying-Chou Cheng , Boren Luo , Tsong-Hua Ou , Yu-Po Tang , Wen-Chun Huang , Ru-Gun Liu , Shu-Chen Lu , Yu Lun Liu , Yao-Ching Ku , Tsai-Sheng Gau
IPC分类号： G03F1/00
CPC分类号： G06F17/5068 , G03F1/00 , G03F1/68
摘要： An intensity selective exposure photomask, also describes as a gradated photomask, is provided. The photomask includes a first region including a first array of sub-resolution features. The first region blocks a first percentage of the incident radiation. The photomask also includes a second region including a second array of sub-resolution features. The second region blocks a second percentage of the incident radiation different that the first percentage. Each of the features of the first and second array includes an opening disposed in an area of attenuating material.
摘要翻译： 还提供强度选择性曝光光掩模，还描述为渐变光掩模。 光掩模包括包括第一子分解特征阵列的第一区域。 第一个区域阻止了第一个入射辐射的百分比。 光掩模还包括包括第二子分辨率特征阵列的第二区域。 第二个区域阻止了第二个百分比的入射辐射不同于第一个百分比。 第一和第二阵列的每个特征包括设置在衰减材料区域中的开口。
-
公开(公告)号：US20120040278A1
公开(公告)日：2012-02-16
申请号：US13281198
申请日：2011-10-25
申请人： George Liu , Kuei Shun Chen , Chih-Yang Yeh , Te-Chih Huang , Wen-Hao Liu , Ying-Chou Cheng , Boren Luo , Tsong-Hua Ou , Yu-Po Tang , Wen-Chun Huang , Ru-Gun Liu , Shu-Chen Lu , Yu Lun Liu , Yao-Ching Ku , Tsai-Sheng Gau
发明人： George Liu , Kuei Shun Chen , Chih-Yang Yeh , Te-Chih Huang , Wen-Hao Liu , Ying-Chou Cheng , Boren Luo , Tsong-Hua Ou , Yu-Po Tang , Wen-Chun Huang , Ru-Gun Liu , Shu-Chen Lu , Yu Lun Liu , Yao-Ching Ku , Tsai-Sheng Gau
IPC分类号： G03F1/38
CPC分类号： G06F17/5068 , G03F1/00 , G03F1/68
摘要： An intensity selective exposure photomask, also describes as a gradated photomask, is provided. The photomask includes a first region including a first array of sub-resolution features. The first region blocks a first percentage of the incident radiation. The photomask also includes a second region including a second array of sub-resolution features. The second region blocks a second percentage of the incident radiation different that the first percentage.
摘要翻译： 还提供强度选择性曝光光掩模，还描述为渐变光掩模。 光掩模包括包括第一子分解特征阵列的第一区域。 第一个区域阻止了第一个入射辐射的百分比。 光掩模还包括包括第二子分辨率特征阵列的第二区域。 第二个区域阻止了第二个百分比的入射辐射不同于第一个百分比。
-
公开(公告)号：US20110217630A1
公开(公告)日：2011-09-08
申请号：US13046265
申请日：2011-03-11
申请人： George Liu , Kuei Shun Chen , Chih-Yang Yeh , Te-Chih Huang , Wen-Hao Liu , Ying-Chou Cheng , Boren Luo , Tsong-Hua Ou , Yu-Po Tang , Wen-Chun Huang , Ru-Gun Liu , Shu-Chen Lu , Yu Lun Liu , Yao-Ching Ku , Tsai-Sheng Gau
发明人： George Liu , Kuei Shun Chen , Chih-Yang Yeh , Te-Chih Huang , Wen-Hao Liu , Ying-Chou Cheng , Boren Luo , Tsong-Hua Ou , Yu-Po Tang , Wen-Chun Huang , Ru-Gun Liu , Shu-Chen Lu , Yu Lun Liu , Yao-Ching Ku , Tsai-Sheng Gau
IPC分类号： G03F1/00
CPC分类号： G06F17/5068 , G03F1/00 , G03F1/68
摘要： An intensity selective exposure photomask, also describes as a gradated photomask, is provided. The photomask includes a first region including a first array of sub-resolution features. The first region blocks a first percentage of the incident radiation. The photomask also includes a second region including a second array of sub-resolution features. The second region blocks a second percentage of the incident radiation different that the first percentage. Each of the features of the first and second array includes an opening disposed in an area of attenuating material.
摘要翻译： 还提供强度选择性曝光光掩模，还描述为渐变光掩模。 光掩模包括包括第一子分解特征阵列的第一区域。 第一个区域阻止了第一个入射辐射的百分比。 光掩模还包括包括第二子分辨率特征阵列的第二区域。 第二个区域阻止了第二个百分比的入射辐射不同于第一个百分比。 第一和第二阵列的每个特征包括设置在衰减材料区域中的开口。
-
公开(公告)号：US08003303B2
公开(公告)日：2011-08-23
申请号：US12421378
申请日：2009-04-09
申请人： George Liu , Kuei Shun Chen , Chih-Yang Yeh , Te-Chih Huang
发明人： George Liu , Kuei Shun Chen , Chih-Yang Yeh , Te-Chih Huang
摘要： A gradated photomask is provided. The photomask includes a first region including a first plurality of sub-resolution features and a second region including a second plurality of sub-resolution features. The first region blocks a first percentage of the incident radiation. The second region blocks a second percentage of the incident radiation. The first and second percentage are different. An intensity selective exposure method is also provided.
摘要翻译： 提供了分级光掩模。 光掩模包括包括第一多个子分辨率特征的第一区域和包括第二多个子分辨率特征的第二区域。 第一个区域阻止了第一个入射辐射的百分比。 第二个区域阻挡了入射辐射的第二个百分比。 第一和第二个百分比是不同的。 还提供强度选择性曝光方法。
-
公开(公告)号：US07858404B2
公开(公告)日：2010-12-28
申请号：US11686078
申请日：2007-03-14
申请人： Te-Chih Huang , Chih-Ming Ke , Tsai-Sheng Gau
发明人： Te-Chih Huang , Chih-Ming Ke , Tsai-Sheng Gau
CPC分类号： H01L22/12 , G03F7/70633
摘要： A method of semiconductor manufacturing including forming an overlay offset measurement target including a first feature on a first layer and a second feature on a second layer. The first feature and the second feature have a first predetermined overlay offset. The target is irradiated. The reflectivity of the irradiated target is determined. An overlay offset for the first layer and the second layer is calculated using the determined reflectivity.
摘要翻译： 一种半导体制造方法，包括在第一层上形成包括第一特征的覆盖偏移测量目标，在第二层上形成第二特征。 第一特征和第二特征具有第一预定覆盖偏移。 目标被照射。 确定照射的靶的反射率。 使用确定的反射率计算第一层和第二层的覆盖偏移。
-
8.发明申请Optoelectronic Thermal Interfaces for 3-Dimensional Billet Devices, Including Vertical Multijunction Photovoltaic Receivers Using Heat Sinked Anode/Billet/Cathode For High Intensity Beaming and Wireless Power Transmission 审中-公开用于三维坯料设备的光电热接口，包括使用散热阳极/坯料/阴极的垂直多功能光伏接收器，用于高强度打火和无线电力传输公开(公告)号：US20160005906A1
公开(公告)日：2016-01-07
申请号：US14324040
申请日：2014-07-03
申请人： Chiun-Yen Tung , Mei-huan Yang , Terry Zahuranec , Remigio Perales , Te-Chih Huang , Jheng-Syuan Shih , Cheng-Liang Wu , Chin-Wei Hsu , Mark J. Elting
发明人： Chiun-Yen Tung , Mei-huan Yang , Terry Zahuranec , Remigio Perales , Te-Chih Huang , Jheng-Syuan Shih , Cheng-Liang Wu , Chin-Wei Hsu , Mark J. Elting
IPC分类号： H01L31/052 , H01L31/18 , H01L31/047
CPC分类号： H01L31/052 , H01L31/047 , H01L31/0521 , H01L31/18 , Y02E10/50
摘要： Thermal, electrical and/or optical interfacing for three-dimensional optoelectronic devices, such as semiconductor device billets, allows high intensity operation, such as for receiving and transducing extremely high intensity light shined onto a small surface semiconductor optoelectronic device such as a photovoltaic receiver or cell, transducer, waveguide or splitter. This allows high intensity energy transfer for beam receiving, signal acquisition, and beam or signal generation for high intensity power beaming and wireless power transmission. Preferred embodiments include three-dimensional photovoltaic receiver billets capable of receiving thousands of suns intensity or high intensity laser light for power conversion, such as by using edge-illuminated vertical multijunction photovoltaic receivers. Heat sink holding structures assist in thermal and electromagnetic communication with opposing billet surfaces.
摘要翻译： 用于三维光电子器件（例如半导体器件坯料）的热，电和/或光学接口允许高强度操作，例如用于接收和转换发光到小表面半导体光电子器件（例如光伏接收器）上的极高强度的光 电池，换能器，波导或分流器。 这允许高强度能量传输用于波束接收，信号采集和用于高强度功率发射和无线功率传输的波束或信号生成。 优选的实施例包括能够接收数千个太阳强度或用于功率转换的高强度激光的三维光伏接收器坯料，例如通过使用边缘照明的垂直多结光伏接收器。 散热器固定结构有助于与相对的钢坯表面进行热和电磁连通。
-
公开(公告)号：US08837810B2
公开(公告)日：2014-09-16
申请号：US13431668
申请日：2012-03-27
申请人： Yen-Liang Chen , Te-Chih Huang , Chen-Ming Wang , Chih-Ming Ke , Tsai-Sheng Gau
发明人： Yen-Liang Chen , Te-Chih Huang , Chen-Ming Wang , Chih-Ming Ke , Tsai-Sheng Gau
IPC分类号： G06K9/68
CPC分类号： G03F7/70633 , G06T7/001 , G06T7/68 , G06T2207/30148
摘要： A method of determining overlay error in semiconductor device fabrication includes receiving an image of an overlay mark formed on a substrate. The received image is separated into a first image and a second image, where the first image includes representations of features formed on a first layer of the substrate and the second image includes representations of the features formed on a second layer of the substrate. A quality indicator is determined for the first image and a quality indicator is determined for the second image. In an embodiment, the quality indicators include asymmetry indexes.
摘要翻译： 确定半导体器件制造中的覆盖误差的方法包括接收形成在衬底上的覆盖标记的图像。 所接收的图像被分成第一图像和第二图像，其中第一图像包括形成在基底的第一层上的特征的表示，并且第二图像包括形成在基底的第二层上的特征的表示。 确定第一个图像的质量指示符，并确定第二个图像的质量指示符。 在一个实施例中，质量指标包括不对称指数。
-
公开(公告)号：US20130259358A1
公开(公告)日：2013-10-03
申请号：US13431668
申请日：2012-03-27
申请人： Yen-Liang Chen , Te-Chih Huang , Chen-Ming Wang , Chih-Ming Ke , Tsai-Sheng Gau
发明人： Yen-Liang Chen , Te-Chih Huang , Chen-Ming Wang , Chih-Ming Ke , Tsai-Sheng Gau
IPC分类号： G06K9/68
CPC分类号： G03F7/70633 , G06T7/001 , G06T7/68 , G06T2207/30148
摘要： A method of determining overlay error in semiconductor device fabrication includes receiving an image of an overlay mark formed on a substrate. The received image is separated into a first image and a second image, where the first image includes representations of features formed on a first layer of the substrate and the second image includes representations of the features formed on a second layer of the substrate. A quality indicator is determined for the first image and a quality indicator is determined for the second image. In an embodiment, the quality indicators include asymmetry indexes
摘要翻译： 确定半导体器件制造中的覆盖误差的方法包括接收形成在衬底上的覆盖标记的图像。 所接收的图像被分成第一图像和第二图像，其中第一图像包括形成在基底的第一层上的特征的表示，并且第二图像包括形成在基底的第二层上的特征的表示。 确定第一个图像的质量指示符，并确定第二个图像的质量指示符。 在一个实施例中，质量指标包括不对称指数
-
-
-
-
-
-
-
-
-
搜索结果
20 条记录 (耗时 0.021 秒)
