公开(公告)号：US20130001574A1

公开(公告)日：2013-01-03

申请号：US13174083

申请日：2011-06-30

申请人： Chao-Yang Lu ,  Guang-Jye Shiau ,  Akira Ito

发明人： Chao-Yang Lu ,  Guang-Jye Shiau ,  Akira Ito

IPC分类号： H01L29/78 ,  H01L21/28

CPC分类号： H01L29/7839 ,  G11C17/16

摘要： According to embodiments of the invention, a field transistor structure is provided. The field transistor structure includes a semiconductor substrate, a metal gate, a polycrystalline silicon (polysilicon) layer, and first and second metal portions. The polysilicon layer has first, second, third, and fourth sides and is disposed between the semiconductor substrate on the first side and the metal gate on the second side. The polysilicon layer is also disposed between the first and second metal portions on the third and fourth sides. According to some embodiments of the present invention, the field transistor structure may also include a thin metal layer disposed between the polysilicon layer and the semiconductor substrate. The thin metal layer may be electronically coupled to each of the first and second metal portions.

摘要翻译： 根据本发明的实施例，提供了场晶体管结构。 场晶体管结构包括半导体衬底，金属栅极，多晶硅（多晶硅）层以及第一和第二金属部分。 多晶硅层具有第一，第二，第三和第四边，并且设置在第一侧的半导体衬底和第二侧上的金属栅极之间。 多晶硅层也设置在第三和第四侧上的第一和第二金属部分之间。 根据本发明的一些实施例，场晶体管结构还可以包括设置在多晶硅层和半导体衬底之间的薄金属层。 薄金属层可以电连接到第一和第二金属部分中的每一个。

公开(公告)号：US20120254107A1

公开(公告)日：2012-10-04

申请号：US13493193

申请日：2012-06-11

申请人： Akira Ito ,  Nobumitsu Takaoka ,  Takahiro Nakano

发明人： Akira Ito ,  Nobumitsu Takaoka ,  Takahiro Nakano

IPC分类号： G06F12/16 ,  G06F17/30

CPC分类号： G06F3/0643 ,  G06F3/0619 ,  G06F3/0649 ,  G06F3/067 ,  G06F11/1456 ,  G06F11/1458 ,  G06F11/1469 ,  G06F17/30153 ,  G06F17/30221

摘要： The storage system eliminates inconsistency between a stub, and a file data storage location indicated by the stub. In a storage system that executes HSM using stubs, information relating to a higher tier, which is a data migration source, is recorded during data migration. The stub in the higher tier is correctly restored using the higher-tier information thus recorded. The stub is restored, and inconsistency between information in the HSM layers is resolved.

摘要翻译： 存储系统消除了存根和存根指示的文件数据存储位置之间的不一致。 在使用存根执行HSM的存储系统中，在数据迁移期间记录与较高层（作为数据迁移源）相关的信息。 使用所记录的较高级别的信息，正确恢复较高级别的存根。 存根被还原，并且解决了HSM层中信息的不一致。

公开(公告)号：US08189695B2

公开(公告)日：2012-05-29

申请号：US11822354

申请日：2007-07-05

申请人： Akira Ito ,  Masahiko Shimizu

发明人： Akira Ito ,  Masahiko Shimizu

IPC分类号： H04K1/10

CPC分类号： H04L5/0019 ,  H04L1/0003 ,  H04L5/006 ,  H04L25/0216 ,  H04L25/0228 ,  H04L27/2646 ,  H04L27/2647

摘要： A OFDM-CDMA communication system that generates a plurality of subcarrier components by multiplying each of a plurality of transmission symbols by a channelization code whose length is N according to a spreading factor, and transmits those subcarrier components by a plurality of different subcarriers, measures the propagation environment of each subcarrier, divides the subcarriers into groups having N number of subcarriers in each group whose propagation environments are close one another, and transmits the N number of subcarrier components, which have been multiplied by the channelization code, by subcarriers of the same group.

摘要翻译： 一种OFDM-CDMA通信系统，其通过将多个发送符号中的每一个乘以根据扩展因子的长度为N的信道化码来生成多个子载波分量，并且通过多个不同的子载波来发送这些子载波分量， 每个子载波的传播环境在每个传播环境彼此接近的组中将子载波划分成具有N个子载波的组，并且将与信道化码相乘的N个子载波分量相乘， 组。

公开(公告)号：US08116241B2

公开(公告)日：2012-02-14

申请号：US11128285

申请日：2005-05-13

申请人： Masahiko Shimizu ,  Akira Ito

发明人： Masahiko Shimizu ,  Akira Ito

IPC分类号： H04B7/00 ,  H04B7/005 ,  H04B7/185 ,  H04L12/66 ,  H04W72/00

CPC分类号： H04B7/0452 ,  H04B7/0626 ,  H04B7/0628

摘要： The present invention relates to a wireless communication system to properly switch over a transmission method of radio signals corresponding to a configuration of a receiver. The wireless communication system according to the present invention includes a transmitting device having a plurality of antennas and capable of transmitting radio signals different from each other from these antennas, and a receiving device having at least one antenna and receiving the radio signals transmitted from the transmitting device. The receiving device comprises an information transmitting unit transmitting, to the transmitting device, configuration information about a configuration of the receiving device, and the transmitting device includes a transmitting unit transmitting the radio signals by a transmission method corresponding to the configuration information received from the receiving device.

摘要翻译： 无线通信系统技术领域本发明涉及一种适当切换对应于接收机的配置的无线信号的发送方法的无线通信系统。 根据本发明的无线通信系统包括具有多个天线并且能够从这些天线发送彼此不同的无线电信号的发送设备，以及具有至少一个天线的接收设备，并且接收从发送端发送的无线电信号 设备。 接收装置包括信息发送单元，向发送装置发送关于接收装置的结构的配置信息，发送装置包括发送单元，发送单元通过与从接收到的接收到的配置信息对应的发送方法发送无线信号 设备。

公开(公告)号：US08011843B2

公开(公告)日：2011-09-06

申请号：US11663697

申请日：2005-09-26

申请人： Koshiro Yamaguchi ,  Akira Ito ,  Yoshio Kunieda ,  Takahiro Miwa

发明人： Koshiro Yamaguchi ,  Akira Ito ,  Yoshio Kunieda ,  Takahiro Miwa

IPC分类号： B41J2/315 ,  B41J11/70 ,  B41J29/38

CPC分类号： B41J15/044 ,  B41J3/4075

摘要： On the back side surface of a release paper of a double-sided adhesive tape 53, sensor marks 65 each in a rectangular shape elongated in the tape width direction when viewed from its front are printed beforehand at a predetermined pitch L along the tape transferring direction to be vertical and symmetric with each other with respect to the center line in the tape width direction. Further, on the double-sided adhesive tape 53, wireless tag circuit element 32 is provided between adjacent sensor marks 65 on the center line in the tape width direction and at a position equal to the distance l1 from each sensor mark 65 in the tape discharging direction (a direction shown by an arrow A1). An antenna 33 and a reflective sensor 35 are distanced from a cutter unit 30 by a distance l1 in the tape transfer direction. The cutter unit 30 and a thermal head 9 are distanced from each other by a distance l2 in the tape transfer direction.

摘要翻译： 在双面胶带53的剥离纸的背面上，沿着带传送方向预先以预定的间距L预先将从前面观察到的沿带宽度方向延伸的长方形的传感器标记65 相对于带宽度方向的中心线彼此垂直和对称。 此外，在双面胶带53上，无线标签电路元件32设置在带宽度方向上的中心线上的相邻传感器标记65与位于带状放电中的每个传感器标记65的距离l1的位置处 方向（箭头A1所示的方向）。 天线33和反射传感器35在带传送方向上与切割器单元30隔开距离l1。 切割器单元30和热敏头9在带传送方向上彼此间隔距离l2。

公开(公告)号：US07997815B2

公开(公告)日：2011-08-16

申请号：US12009705

申请日：2008-01-22

申请人： Akira Ito ,  Koshiro Yamaguchi ,  Norie Ito

发明人： Akira Ito ,  Koshiro Yamaguchi ,  Norie Ito

IPC分类号： B41J5/30 ,  B41J9/44 ,  G06F11/00

CPC分类号： B41J3/4075

摘要： A printer includes a feeding device that feeds a tape-like print medium along a length direction of the print medium and a printing device that prints a character on the print medium. The printer further includes a storage device that stores original data including unit data, line feed data, and line height data. The printer also includes a tape width detecting device that detects a tape width. Further, the printer includes a maximum number of lines calculating device that calculates a maximum number of lines that can be accommodated within the tape width when the height of the line is unchanged, and a print data generating device that generates print data corresponding to the maximum number of lines from the original data, and a printing control device that controls the printing device based on the print data.

摘要翻译： 打印机包括沿着打印介质的长度方向馈送带状打印介质的进给装置和在打印介质上打印字符的打印装置。 打印机还包括存储包括单元数据，换行数据和行高数据的原始数据的存储装置。 打印机还包括检测带宽度的带宽检测装置。 此外，打印机包括最大数量的行计算装置，其计算当线的高度不变时可以在带宽度内容纳的最大行数;以及打印数据生成装置，其生成对应于最大值的打印数据 来自原始数据的行数，以及基于打印数据控制打印装置的打印控制装置。

公开(公告)号：US20110186934A1

公开(公告)日：2011-08-04

申请号：US12657909

申请日：2010-01-29

申请人： Xiangdong Chen ,  Akira Ito

发明人： Xiangdong Chen ,  Akira Ito

IPC分类号： H01L27/092 ,  H01L29/78 ,  H01L21/28

CPC分类号： H01L21/28 ,  H01L27/092 ,  H01L29/78

摘要： Disclosed is a low mismatch semiconductor device that comprises a lightly doped channel region having a first conductivity type and a first dopant concentration in a semiconductor body, and a high-k metal gate stack including a gate metal layer formed over a high-k gate dielectric without having a dielectric cap on the high-k dielectric. The high-k metal gate stack being formed over the lightly doped channel region. The lightly doped channel region may be a P- or N-conductivity region, for example, and may be part of a corresponding P- or N-semiconductor substrate, or a P- or N-well formed in a substrate of the respectively opposite conductivity type. The disclosed semiconductor device, which may be an NMOS or PMOS analog device, for example, can be fabricated as part of an integrated circuit including one or more CMOS logic devices.

摘要翻译： 公开了一种低失配半导体器件，其包括在半导体本体中具有第一导电类型和第一掺杂剂浓度的轻掺杂沟道区，以及包括形成在高k栅极电介质上的栅极金属层的高k金属栅堆叠 在高k电介质上没有电介质盖。 高k金属栅堆叠形成在轻掺杂沟道区上。 轻掺杂沟道区可以是例如P型或N-导电性区，并且可以是相应的P-或N-半导体衬底的一部分，也可以是在相对的相对的衬底中形成的P-阱或N阱 导电类型。 所公开的半导体器件（其可以是例如NMOS或PMOS模拟器件）可以被制造为包括一个或多个CMOS逻辑器件的集成电路的一部分。

公开(公告)号：US20110186926A1

公开(公告)日：2011-08-04

申请号：US12657901

申请日：2010-01-29

申请人： Akira Ito ,  Xiangdong Chen

发明人： Akira Ito ,  Xiangdong Chen

IPC分类号： H01L27/092 ,  H01L29/78 ,  H01L21/8238 ,  H01L21/336

CPC分类号： H01L21/28008 ,  H01L21/28035 ,  H01L29/105 ,  H01L29/4916 ,  H01L29/517 ,  H01L29/78 ,  H01L29/7816 ,  H01L29/7835

摘要： According to one embodiment, a semiconductor device comprises a high-k gate dielectric overlying a well region having a first conductivity type formed in a semiconductor body, and a semiconductor gate formed on the high-k gate dielectric. The semiconductor gate is lightly doped so as to have a second conductivity type opposite the first conductivity type. The disclosed semiconductor device, which may be an NMOS or PMOS device, can further comprise an isolation region formed in the semiconductor body between the semiconductor gate and a drain of the second conductivity type, and a drain extension well of the second conductivity type surrounding the isolation region in the semiconductor body. In one embodiment, the disclosed semiconductor device is fabricated as part of an integrated circuit including one or more CMOS logic devices.

摘要翻译： 根据一个实施例，半导体器件包括覆盖在半导体本体中形成的具有第一导电类型的阱区的高k栅极电介质和形成在高k栅极电介质上的半导体栅极。 半导体栅极被轻掺杂，以具有与第一导电类型相反的第二导电类型。 所公开的可以是NMOS或PMOS器件的半导体器件还可以包括形成在半导体本体中的半导体栅极和第二导电类型的漏极之间的隔离区域，以及包围第二导电类型的漏极延伸阱 半导体体中的隔离区。 在一个实施例中，所公开的半导体器件被制造为包括一个或多个CMOS逻辑器件的集成电路的一部分。

公开(公告)号：US20110169077A1

公开(公告)日：2011-07-14

申请号：US12656054

申请日：2010-01-14

申请人： Akira Ito

发明人： Akira Ito

IPC分类号： H01L29/78

CPC分类号： H01L29/0847 ,  H01L29/0653 ,  H01L29/7835

摘要： An apparatus is disclosed to increase a breakdown voltage of a semiconductor device. The semiconductor device includes a modified breakdown shallow trench isolation (STI) region to effectively reduce a drain to source resistance when compared to a conventional semiconductor device, thereby increasing the breakdown voltage of the semiconductor device when compared to the conventional semiconductor device. The modified breakdown STI region allows more current to pass from a source region to a drain region of the semiconductor device, thereby further increasing the break down voltage of the semiconductor device from that of the conventional semiconductor device. The semiconductor device may include a modified well region to further reduce the drain to source resistance of the semiconductor device. The modified breakdown STI region allows even more current to pass from a source region to a drain region of the semiconductor device, thereby further increasing the break down voltage of the semiconductor device from that of the conventional semiconductor device.

摘要翻译： 公开了一种用于增加半导体器件的击穿电压的装置。 半导体器件包括修改的击穿浅沟槽隔离（STI）区域，以便与传统的半导体器件相比有效地降低漏极到源极的电阻，从而与传统的半导体器件相比增加了半导体器件的击穿电压。 修改的击穿STI区域允许更多的电流从半导体器件的源极区域到漏极区域通过，从而进一步增加了半导体器件的分解电压与常规半导体器件的分解电压。 半导体器件可以包括改进的阱区，以进一步减小半导体器件的漏极 - 源极电阻。 修改的击穿STI区域允许更多的电流从半导体器件的源极区域到漏极区域通过，从而进一步增加了半导体器件的分解电压与常规半导体器件的分解电压。

公开(公告)号：US07938694B2

公开(公告)日：2011-05-10

申请号：US12449722

申请日：2008-03-26

申请人： Hiroomi Hiramitsu ,  Hosei Mizuno ,  Kouichi Matsumoto ,  Hiroki Hirai ,  Akira Ito

发明人： Hiroomi Hiramitsu ,  Hosei Mizuno ,  Kouichi Matsumoto ,  Hiroki Hirai ,  Akira Ito

IPC分类号： H01R11/22

CPC分类号： H01R13/11 ,  H01R4/203 ,  H01R13/111 ,  H01R13/113 ,  H01R13/114 ,  H01R13/4223

摘要： An object of the present invention is to provide a connector terminal which can be easily fitted to or separated from a partner terminal (partner connector) even if the space for fitting operation is limited in the fitting direction. The connector terminal has a terminal inserting portion to which the partner terminal is inserted, and a coupling portion intercoupling and electrically interconnecting the inserting portion and a wire connection portion of a coated wire. The terminal inserting portion and the wire connecting portion are juxtaposed such that the inserting direction of the partner terminal to be inserted into the terminal inserting portion and the axial center direction of the end of the coated wire to be connected to the wire connecting portion is parallel with or substantially parallel with each other, and are intercoupled via the coupling portion so as to overlap with each other in a direction perpendicular to or substantially perpendicular to both of the inserting direction of the partner terminal and the axial center direction of the end of the coated wire.

摘要翻译： 本发明的目的是提供一种即使在装配方向上限制装配操作空间的情况下，也可以容易地将其安装到对方端子（对方连接器）上或与对方端子分离的连接器端子。 连接器端子具有插入对方端子的端子插入部分和耦合部分相互耦合并将插入部分和涂覆线材的电线连接部分电气互连。 端子插入部分和电线连接部分并置，使得插入端子插入部分的对方端子的插入方向和待连接到电线连接部分的涂覆线的端部的轴向中心方向是平行的 彼此之间具有或基本上平行，并且经由联接部分相互耦合，以便在垂直于或基本上垂直于对方端子的插入方向和该端子的端部的轴向中心方向的方向上彼此重叠 涂层线。