公开(公告)号：US20130203256A1

公开(公告)日：2013-08-08

申请号：US13369125

申请日：2012-02-08

申请人： Qing Xu ,  William Thie ,  Camelia Rusu

发明人： Qing Xu ,  William Thie ,  Camelia Rusu

IPC分类号： H01L21/302

CPC分类号： H01L21/30655 ,  H01L21/32137

摘要： A method for etching features in a silicon layer disposed below a mask in a plasma processing chamber a plurality of cycles is provided. A deposition phase forming a deposition on the silicon layer in the plasma processing chamber is provided comprising providing a deposition gas into the plasma processing chamber wherein the deposition gas comprises a halogen containing etchant component and a fluorocarbon deposition component, forming the deposition gas into a plasma, which provides a net deposition on the silicon layer, and stopping the flow of the deposition gas. A silicon etch phase is provided, comprising providing a silicon etch gas into the plasma processing chamber that is different than the deposition gas, forming the silicon etch gas into a plasma to etch the silicon layer, and stopping the flow of the silicon etch gas.

摘要翻译： 提供了一种用于在置于掩模下面在等离子体处理室中的多个周期的硅层中蚀刻特征的方法。 沉积阶段形成在等离子体处理室中的硅层上的沉积提供了一种包括提供沉积气体进入所述等离子体处理室，其中该沉积气体包括含有蚀刻剂组分和碳氟化合物的沉积成分的卤素，在形成沉积气体形成等离子体 ，它提供了在硅层上的净沉积，以及停止该沉积气体流。 甲硅蚀刻阶段提供，其包括：提供硅蚀刻气体流入该等离子体处理室比所述沉积气体不同，在形成硅蚀刻气体形成等离子体来蚀刻硅层，以及停止该硅蚀刻气体的流动。

公开(公告)号：US20130115776A1

公开(公告)日：2013-05-09

申请号：US13290657

申请日：2011-11-07

申请人： Mirzafer Abatchev ,  Camelia Rusu ,  Brian McMillin

发明人： Mirzafer Abatchev ,  Camelia Rusu ,  Brian McMillin

IPC分类号： H01L21/3065 ,  H01L21/30 ,  F16K17/00

CPC分类号： F16K3/0209 ,  H01J37/32816 ,  H01J37/32834 ,  H01L21/30655 ,  Y10T137/7837

摘要： A pressure control valve assembly of a plasma processing chamber in which semiconductor substrates are processed includes a housing having an inlet, an outlet and a conduit extending between the inlet and the outlet, the inlet adapted to be connected to an interior of the plasma processing chamber and the outlet adapted to be connected to a vacuum pump which maintains the plasma processing chamber at desired pressure set points during rapid alternating phases of processing a semiconductor substrate in the chamber. A fixed slotted valve plate having a first set of parallel slots therein is fixed in the conduit such that gasses withdrawn from the chamber into the conduit pass through the first set of parallel slots. A movable slotted valve plate having a second set of parallel slots therein is movable with respect to the fixed slotted valve plate so as to adjust pressure in the chamber.

摘要翻译： 其中处理半导体衬底的等离子体处理室的压力控制阀组件包括具有入口，出口和在入口和出口之间延伸的导管的壳体，入口适于连接到等离子体处理室的内部 并且所述出口适于连接到真空泵，所述真空泵在处理所述室中的半导体衬底的快速交替阶段期间将所述等离子体处理室维持在期望的压力设定点。 在其中具有第一组平行槽的固定开槽阀板固定在管道中，使得从腔室排出到管道中的气体通过第一组平行槽。 其中具有第二组平行槽的可移动开槽阀板可相对于固定开槽阀板移动，以调节腔室中的压力。

公开(公告)号：US20120309194A1

公开(公告)日：2012-12-06

申请号：US13188174

申请日：2011-07-21

申请人： Qing Xu ,  Camelia Rusu ,  Jaroslaw W. Winniczek ,  Frank Y. Lin ,  Alan J. Miller

发明人： Qing Xu ,  Camelia Rusu ,  Jaroslaw W. Winniczek ,  Frank Y. Lin ,  Alan J. Miller

IPC分类号： H01L21/3065

CPC分类号： H01L21/30655 ,  H01J37/32082 ,  H01J37/32449 ,  H01L21/76802 ,  H01L21/76898

摘要： A method for etching features into an etch layer in a plasma processing chamber, comprising a plurality of cycles is provided. Each cycle comprises a deposition phase and an etching phase. The deposition phase comprises providing a flow of deposition gas, forming a plasma from the deposition gas in the plasma processing chamber, providing a first bias during the deposition phase to provide an anisotropic deposition, and stopping the flow of the deposition gas into the plasma processing chamber. The etching phase, comprises providing a flow of an etch gas, forming a plasma from the etch gas in the plasma processing chamber, providing a second bias during the etch phase, wherein the first bias is greater than the second bias, and stopping the flow of the etch gas into the plasma processing chamber.

摘要翻译： 提供了一种用于将特征蚀刻到等离子体处理室中的蚀刻层的方法，其包括多个循环。 每个循环包括沉积阶段和蚀刻阶段。 沉积阶段包括提供沉积气体流，从等离子体处理室中的沉积气体形成等离子体，在沉积阶段提供第一偏压以提供各向异性沉积，并停止沉积气体流入等离子体处理 房间。 蚀刻阶段包括提供蚀刻气体流，从等离子体处理室中的蚀刻气体形成等离子体，在蚀刻阶段期间提供第二偏压，其中第一偏压大于第二偏压，并停止流动 的蚀刻气体进入等离子体处理室。

公开(公告)号：US20100327413A1

公开(公告)日：2010-12-30

申请号：US12595234

申请日：2008-05-02

申请人： Jong Pil Lee ,  Seiji Kawaguchi ,  Camelia Rusu ,  Zhisong Huang ,  Mukund Srinivasan ,  Eric Hudson ,  Aaron Eppler

发明人： Jong Pil Lee ,  Seiji Kawaguchi ,  Camelia Rusu ,  Zhisong Huang ,  Mukund Srinivasan ,  Eric Hudson ,  Aaron Eppler

IPC分类号： H01L29/00 ,  H01L21/3065 ,  C23F1/08 ,  H01L21/306

CPC分类号： H01L21/31144 ,  H01L21/31122

摘要： A method for opening a carbon-based hardmask layer formed on an etch layer over a substrate is provided. The hardmask layer is disposed below a patterned mask. The substrate is placed in a plasma processing chamber. The hardmask layer is opened by flowing a hardmask opening gas including a COS component into the plasma chamber, forming a plasma from the hardmask opening gas, and stopping the flow of the hardmask opening gas. The hardmask layer may be made of amorphous carbon, or made of spun-on carbon, and the hardmask opening gas may further include O2.

摘要翻译： 提供了一种用于打开形成在衬底上的蚀刻层上的碳基硬掩模层的方法。 硬掩模层设置在图案化掩模下方。 将基板放置在等离子体处理室中。 通过将包括COS组分的硬掩模开口气体流入等离子体室来打开硬掩模层，从硬掩模开口气体形成等离子体，并阻止硬掩模开口气体的流动。 硬掩模层可以由无定形碳制成，或由旋涂碳制成，并且硬掩模开口气体还可以包括O 2。

公开(公告)号：US07645707B2

公开(公告)日：2010-01-12

申请号：US11095932

申请日：2005-03-30

申请人： Camelia Rusu ,  Zhisong Huang ,  Mukund Srinivasan ,  Eric A. Hudson ,  Aaron Eppler

发明人： Camelia Rusu ,  Zhisong Huang ,  Mukund Srinivasan ,  Eric A. Hudson ,  Aaron Eppler

IPC分类号： H01L21/302

CPC分类号： H01L21/31116

摘要： A method for etching a dielectric layer over a substrate and disposed below a mask is provided. The substrate is placed in a plasma processing chamber. An etchant gas comprising O2 and a sulfur component gas comprising at least one of H2S and a compound containing at least one carbon sulfur bond is provided into the plasma chamber. A plasma is formed from the etchant gas. Features are etched into the etch layer through the photoresist mask with the plasma from the etchant gas.

摘要翻译： 提供了一种用于在衬底上蚀刻介质层并且设置在掩模下方的方法。 将基板放置在等离子体处理室中。 包含O 2和包含至少一种H2S的硫成分气体的蚀刻剂气体和含有至少一个碳硫键的化合物被提供到等离子体室中。 等离子体由蚀刻剂气体形成。 通过来自蚀刻剂气体的等离子体通过光致抗蚀剂掩模将特征蚀刻到蚀刻层中。

公开(公告)号：US20060226120A1

公开(公告)日：2006-10-12

申请号：US11095932

申请日：2005-03-30

申请人： Camelia Rusu ,  Zhisong Huang ,  Mukund Srinivasan ,  Eric Hudson ,  Aaron Eppler

发明人： Camelia Rusu ,  Zhisong Huang ,  Mukund Srinivasan ,  Eric Hudson ,  Aaron Eppler

IPC分类号： C23F1/00 ,  B44C1/22 ,  H01L21/461

CPC分类号： H01L21/31116

摘要： A method for etching a dielectric layer over a substrate and disposed below a mask is provided. The substrate is placed in a plasma processing chamber. An etchant gas comprising O2 and a sulfur component gas comprising at least one of H2S and a compound containing at least one carbon sulfur bond is provided into the plasma chamber. A plasma is formed from the etchant gas. Features are etched into the etch layer through the photoresist mask with the plasma from the etchant gas.

摘要翻译： 提供了一种用于在衬底上蚀刻介质层并且设置在掩模下方的方法。 将基板放置在等离子体处理室中。 包含O 2 2的蚀刻剂气体和包含H 2 S 2的至少一种的硫成分气体和含有至少一个碳硫键的化合物被提供到等离子体室中。 等离子体由蚀刻剂气体形成。 通过来自蚀刻剂气体的等离子体通过光致抗蚀剂掩模将特征蚀刻到蚀刻层中。

公开(公告)号：US20050039682A1

公开(公告)日：2005-02-24

申请号：US10645665

申请日：2003-08-22

申请人： Raj Dhindsa ,  S.M. Sadjadi ,  Felix Kozakevich ,  Dave Trussell ,  Lumin Li ,  Eric Lenz ,  Camelia Rusu ,  Mukund Srinivasan ,  Aaron Eppler ,  Jim Tietz ,  Jeffrey Marks

发明人： Raj Dhindsa ,  S.M. Sadjadi ,  Felix Kozakevich ,  Dave Trussell ,  Lumin Li ,  Eric Lenz ,  Camelia Rusu ,  Mukund Srinivasan ,  Aaron Eppler ,  Jim Tietz ,  Jeffrey Marks

IPC分类号： H01J37/32 ,  C23C16/00 ,  H05H1/24

CPC分类号： H01J37/32174 ,  H01J37/32082 ,  H01J37/32165

摘要： A workpiece is processed with a plasma in a vacuum plasma processing chamber by exciting the plasma at several frequencies such that the excitation of the plasma by the several frequencies simultaneously causes several different phenomena to occur in the plasma. The chamber includes central top and bottom electrodes and a peripheral top and/or bottom electrode arrangement that is either powered by RF or is connected to a reference potential by a filter arrangement that passes at least one of the plasma excitation frequencies to the exclusion of other frequencies.

摘要翻译： 通过以几个频率激发等离子体，在真空等离子体处理室中用等离子体处理工件，使得等离子体被几个频率激发同时导致在等离子体中发生几种不同的现象。 该腔室包括中央顶部和底部电极以及由RF供电的外围顶部和/或底部电极装置，或通过将至少一个等离子体激发频率传递至排除另一个等离子体激发频率的滤波器装置连接到参考电位 频率