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115 条记录 (耗时 0.03 秒)

    Hand-driven vehicle
    21.
    发明授权
    Hand-driven vehicle 失效
    手动车

    公开(公告)号：US07077415B2

    公开(公告)日：2006-07-18

    申请号：US10942255

    申请日：2004-09-15

    申请人： Shigeru Ikeda ,  Shoji Ohshita ,  Yoshio Sakai

    发明人： Shigeru Ikeda ,  Shoji Ohshita ,  Yoshio Sakai

    IPC分类号： A63B21/00 ,  B62M1/14

    CPC分类号： B62M1/16

    摘要： A vehicle body is provided with a rear wheel at a rear portion, and a front wheel coupled to a handle post. A swing-enabling shaft is rotatably provided on the upper portion of the handle post. A handlebars unit is attached to the swing-enabling shaft such that it can swing forward and backward relative to the vehicle body. When the handlebars unit is swung, a driving mechanism is driven. The driving mechanism rotates the front wheel such that the vehicle body advances, regardless of whether the handlebars unit is swung forward or backward.

    摘要翻译： 车体在后部设置有后轮，以及联接到手柄柱的前轮。 可旋转地设置在手柄柱的上部的摆动轴。 把手单元连接到可摆动轴上，使得其可相对于车身前后摆动。 当把手单元摆动时，驱动机构被驱动。 驱动机构使前轮旋转，使得车身前进，而不管车把单元是向前还是向后摆动。

    Mirror controller for optical switch
    22.
    发明申请
    Mirror controller for optical switch 失效
    镜头控制器用于光开关

    公开(公告)号：US20060088317A1

    公开(公告)日：2006-04-27

    申请号：US11038056

    申请日：2005-01-21

    申请人： Yuji Ishii ,  Kazuyuki Mori ,  Tamotsu Akashi ,  Yoshio Sakai

    发明人： Yuji Ishii ,  Kazuyuki Mori ,  Tamotsu Akashi ,  Yoshio Sakai

    IPC分类号： H04B10/08

    CPC分类号： G02B6/3588 ,  G02B6/3512 ,  G02B6/3556 ,  H04Q11/0005 ,  H04Q2011/003 ,  H04Q2011/0039 ,  H04Q2011/0043

    摘要： A mirror controller of an optical switch comprises a signal generator (10, 82, 83) for passing the optical signal on the same light path as the one for optical communication using the optical switch, and an image analyzer (15, 16, 81) detecting the optical signal as the light scattered by at least one of tilt mirrors (111, 123) and an output collimator array (14). The image analyzer detects the position of the light beam image as a control position (121, 141, 85) based on the scattered light, and controls the tilt mirrors in such a manner that the detected control position coincides with the predetermined desired target position (122, 142, 84, 86) on at least one of the tilt mirrors and the output collimator array. The mirror controller can realize the connection test of the optical signal between input and output with high accuracy and reliability.

    摘要翻译： 一种光开关的镜面控制器包括：信号发生器（10,82,83），用于使光信号与用于使用光开关的光通信相同的光路通过;以及图像分析器（15,16,81） 检测作为由倾斜镜（111,123）和输出准直器阵列（14）中的至少一个散射的光的光信号。 图像分析仪基于散射光检测光束图像的位置作为控制位置（121,141,85），并且以这样的方式控制倾斜镜，使得检测到的控制位置与预定的期望目标位置（ 122,142,84,86）在至少一个倾斜镜和输出准直器阵列上。 镜面控制器可以高精度，高可靠性实现输入和输出之间光信号的连接测试。

    Semiconductor integrated circuit device
    23.
    发明授权
    Semiconductor integrated circuit device 失效
    半导体集成电路器件

    公开(公告)号：US5700705A

    公开(公告)日：1997-12-23

    申请号：US470452

    申请日：1995-06-06

    申请人： Satoshi Meguro ,  Kiyofumi Uchibori ,  Norio Suzuki ,  Makoto Motoyoshi ,  Atsuyoshi Koike ,  Toshiaki Yamanaka ,  Yoshio Sakai ,  Toru Kaga ,  Naotaka Hashimoto ,  Takashi Hashimoto ,  Shigeru Honjou ,  Osamu Minato

    发明人： Satoshi Meguro ,  Kiyofumi Uchibori ,  Norio Suzuki ,  Makoto Motoyoshi ,  Atsuyoshi Koike ,  Toshiaki Yamanaka ,  Yoshio Sakai ,  Toru Kaga ,  Naotaka Hashimoto ,  Takashi Hashimoto ,  Shigeru Honjou ,  Osamu Minato

    IPC分类号： H01L21/8244 ,  H01L27/11

    CPC分类号： H01L27/1104 ,  H01L27/11 ,  H01L27/1108 ,  Y10S257/903 ,  Y10S257/904

    摘要： The manufacture of a memory cell of the type employing a pair of cross-coupled CMOS inverters of a SRAM is disclosed in which the load MISFETs are stacked above the semiconductor substrate and over the drive MISFETs. The manufacture of each load MISFET consists of forming source, drain and channel regions within the same polycrystalline silicon film, and a gate electrode consisting of a different layer conductive film, such as a polycrystalline film, than that of the drive MISFETs. The manufacture of the memory cell having such a stacked arrangement, facilitates the patterning of the source (drain) region and gate electrode of each load MISFET thereof to have an overlapping relationship with each other so as to increase the effective capacitance associated with each of the memory cell storage nodes. The gate electrodes of both the drive and load MISFETs are formed of n-type or of n-type and p-type polycrystalline silicon films, respectively, and electrical connections are formed between the drain regions of the first and second p-channel load MISFETs with that of the drain regions of the first and second n-channel drive MISFETs through separate polycrystalline silicon films, respectively. Also, there are formed electrical connections between the polycrystalline silicon gate electrodes of the first and second load MISFETs with that of drain regions of the second and first drive MISFETs, through the poly-Si gate electrodes of the first and second drive MISFETs, in each memory cell of the SRAM, respectively, furthermore.

    摘要翻译： 公开了采用SRAM的一对交叉耦合CMOS反相器的类型的存储单元的制造，其中负载MISFET堆叠在半导体衬底上方和驱动MISFET上方。 每个负载MISFET的制造包括在同一多晶硅膜内形成源极，漏极和沟道区域，以及由不同层导电膜（例如多晶膜）组成的栅电极，而不是驱动MISFET。 具有这种堆叠布置的存储单元的制造有助于其每个负载MISFET的源极（漏极）区域和栅极电极的图案化，以使得彼此之间具有重叠关系，从而增加与每个负载MISFET相关联的有效电容 存储单元存储节点。 驱动和负载MISFET的栅电极分别由n型或n型和p型多晶硅膜形成，并且在第一和第二p沟道负载MISFET的漏极区之间形成电连接 与第一和第二n沟道驱动MISFET的漏极区分别通过分离的多晶硅膜。 此外，通过第一和第二驱动MISFET的多晶硅栅电极，在第一和第二负载MISFET的多晶硅栅电极与第二和第一驱动MISFET的漏极区域之间形成电连接 此外，SRAM的存储单元分别。

    Method of applying a skin-protective composition
    24.
    发明授权
    Method of applying a skin-protective composition 失效
    施用皮肤保护性组合物的方法

    公开(公告)号：US5346977A

    公开(公告)日：1994-09-13

    申请号：US52293

    申请日：1993-04-26

    申请人： Yoshio Sakai ,  Izumi Saitoh

    发明人： Yoshio Sakai ,  Izumi Saitoh

    IPC分类号： A61K8/00 ,  A61K8/81 ,  A61Q17/00 ,  C08F20/10 ,  C08F220/10

    CPC分类号： A61Q17/00 ,  A61K8/8152 ,  A61K2800/75

    摘要： A method of applying a skin-protective composition which comprises an acrylic copolymer which comprises(A) 40 to 85% by weight of an alkyl acrylate,(B) 5 to 50% by weight of an alkyl methacrylate, and(C) 10 to 30% by weight of a mono-ethylenically unsaturated monomer having a carboxyl group, and a medium, which can effectively block irritative materials and be easily removed from a skin.

    摘要翻译： 一种施用皮肤保护性组合物的方法，其包含丙烯酸共聚物，其包含（A）40〜85重量％的丙烯酸烷基酯，（B）5〜50重量％的甲基丙烯酸烷基酯，（C）10〜 30重量％的具有羧基的单烯属不饱和单体和介质，其可以有效地阻挡刺激性材料并容易从皮肤上除去。

    Gyro compass
    26.
    发明授权
    Gyro compass 失效
    陀螺指南针

    公开(公告)号：US5187870A

    公开(公告)日：1993-02-23

    申请号：US905201

    申请日：1992-06-26

    申请人： Atsushi Abe ,  Yoshio Sakai

    发明人： Atsushi Abe ,  Yoshio Sakai

    IPC分类号： G01C19/30 ,  G01C19/38

    CPC分类号： G01C19/38 ,  G01C19/30

    摘要： A gyro compass according to the present invention includes an inclinometer for detecting inclination of the spin axis of a rotor with respect to the earth's surface, a horizontal axis torque applying device for exerting a torque about the horizontal axis of the rotor, a vertical axis torque applying device for exerting a torque about the vertical axis of the rotor, and an equilibrium tilt angle storing device for storing an inclination angle of the rotor while the gyro compass is in the equilibrium state. An inclination adjustment controlling device for adjusting an inclination angle stored of the rotor to the inclination angle in the equilibrium state by controlling the vertical axis torque applying device.

    摘要翻译： 根据本发明的陀螺仪罗盘包括用于检测转子相对于地球表面的旋转轴的倾角的倾斜计，用于施加围绕转子的水平轴线的转矩的水平轴转矩施加装置，垂直轴转矩 施加装置，用于绕转子的垂直轴施加扭矩;以及平衡倾斜角度存储装置，用于在陀螺罗盘处于平衡状态时存储转子的倾斜角。 一种倾斜调节控制装置，用于通过控制垂直轴转矩施加装置来将转子存储的倾斜角度调节到平衡状态下的倾斜角度。

    Semiconductor memory devices having stacked polycrystalline silicon transistors
    27.
    发明授权
    Semiconductor memory devices having stacked polycrystalline silicon transistors 失效
    具有堆叠多晶硅晶体管的半导体存储器件

    公开(公告)号：US5034797A

    公开(公告)日：1991-07-23

    申请号：US497182

    申请日：1990-03-22

    申请人： Toshiaki Yamanaka ,  Yoshio Sakai ,  Takashi Hashimoto ,  Takashi Nishida ,  Satoshi Meguro ,  Shuji Ikeda ,  Eiji Takeda

    发明人： Toshiaki Yamanaka ,  Yoshio Sakai ,  Takashi Hashimoto ,  Takashi Nishida ,  Satoshi Meguro ,  Shuji Ikeda ,  Eiji Takeda

    IPC分类号： G11C11/412 ,  H01L21/8244 ,  H01L27/11

    CPC分类号： H01L27/1104 ,  H01L27/11 ,  H01L27/1108 ,  Y10S257/904

    摘要： A semiconductor device having a CMIS structure for forming a static random access memory is disclosed which device can increase the packing density of the memory and reduce the stand-by power thereof. In this semiconductor device, a first MISFET of a first conductivity type is formed on and a substrate, a second MISFET of a second conductivity type is formed over the first MISFET with a first insulating film therebetween to form a stacked CMIS structure. The second MISFET is made up of a first conductive film, a second insulating film and a second conductive film, with the source, drain and channel regions of the second MISFET being formed in the first conductive film. A first resistive drain region is formed between the channel and drain regions of the first conductive film so that an impurity of the second conductivity type is contained in the first resistive drain region at a lower concentration than in the drain region, or the first resistive drain region is substantially undoped. The first resistive drain region is disposed over the gate electrode of the first MISFET, and the gate insulating film and gate electrode of the second MISFET are formed of the second insulating film and the second conductive film, respectively. In a case where a semiconductor memory device having a static random access memory cell which is provided with a flip-flop circuit of the stacked CMIS type, is formed, a pair of first MISFET's and a pair of third MISFET's of the first conductivity type are formed on the substrate, and the second MISFET is formed on one MISFET of the first MISFET's and the third MISFET's.

    摘要翻译： 公开了具有用于形成静态随机存取存储器的CMIS结构的半导体器件，其可以增加存储器的堆积密度并降低其待机功率。 在该半导体器件中，在基板上形成第一导电型的第一MISFET，在第一MISFET上形成第二导电类型的第二MISFET，其间具有第一绝缘膜，以形成层叠的CMIS结构。 第二MISFET由第一导电膜，第二绝缘膜和第二导电膜构成，第二MISFET的源极，漏极和沟道区形成在第一导电膜中。 在第一导电膜的沟道和漏极区之间形成第一电阻漏极区，使得第一导电类型的杂质以比漏极区域低的浓度包含在第一电阻漏极区域中，或者第一电阻漏极 区域基本上未掺杂。 第一电阻漏极区域设置在第一MISFET的栅电极之上，并且第二MISFET的栅极绝缘膜和栅极电极分别由第二绝缘膜和第二导电膜形成。 在具有设置有层叠CMIS型触发电路的静态随机存取存储单元的半导体存储器件的情况下，形成一对第一MISFET和第一导电类型的一对第三MISFET 并且第一MISFET形成在第一MISFET和第三MISFET的一个MISFET上。

    Semiconductor memory device having stacked capacitor cells
    28.
    发明授权
    Semiconductor memory device having stacked capacitor cells 失效
    具有层叠电容器单元的半导体存储器件

    公开(公告)号：US4970564A

    公开(公告)日：1990-11-13

    申请号：US287881

    申请日：1988-12-21

    申请人： Shinichiro Kimura ,  Naotaka Hashimoto ,  Yoshio Sakai ,  Tokuo Kure ,  Yoshifumi Kawamoto

    发明人： Shinichiro Kimura ,  Naotaka Hashimoto ,  Yoshio Sakai ,  Tokuo Kure ,  Yoshifumi Kawamoto

    IPC分类号： H01L27/04 ,  H01L21/822 ,  H01L21/8242 ,  H01L27/10 ,  H01L27/108

    CPC分类号： H01L27/10808

    摘要： A semiconductor memory device having STC cells wherein major portions of active regions consisting of channel-forming portions are tilted at an angle of 45.degree. with respect to the word lines and the bit lines that meet at right angles with each other, enabling the storage capacity portions to be arranged very densely and sufficiently large capacities to be maintained with very small cell areas. In the semiconductor memory device, furthermore, the storage capacity portions are formed even on the bit lines. Therefore, the bit lines are shielded, the capacitance between the bit lines decreases, and the memory array noise decreases.

    摘要翻译： 具有STC单元的半导体存储器件，其中由沟道形成部分组成的有源区的主要部分相对于彼此成直角相交的字线和位线以45°的角度倾斜，使得存储容量 部分布置得非常密集和足够大的容量保持非常小的单元格区域。 此外，在半导体存储器件中，即使在位线上形成存储容量部分。 因此，位线被屏蔽，位线之间的电容减小，并且存储器阵列噪声降低。