公开(公告)号：US07969693B2

公开(公告)日：2011-06-28

申请号：US11857921

申请日：2007-09-19

申请人： Kazuaki Ikarashi ,  Eiji Umetsu ,  Kenichi Tanaka ,  Kazumasa Nishimura ,  Masamichi Saito ,  Yosuke Ide ,  Ryo Nakabayashi ,  Yoshihiro Nishiyama ,  Hidekazu Kobayashi ,  Naoya Hasegawa

发明人： Kazuaki Ikarashi ,  Eiji Umetsu ,  Kenichi Tanaka ,  Kazumasa Nishimura ,  Masamichi Saito ,  Yosuke Ide ,  Ryo Nakabayashi ,  Yoshihiro Nishiyama ,  Hidekazu Kobayashi ,  Naoya Hasegawa

IPC分类号： G11B5/39

CPC分类号： H01L43/08 ,  B82Y10/00 ,  B82Y25/00 ,  B82Y40/00 ,  G01R33/093 ,  G01R33/098 ,  G11B5/3906 ,  G11B5/3909 ,  G11C11/16 ,  H01F10/132 ,  H01F10/3254 ,  H01F41/302 ,  H01L43/12

摘要： A tunnel magnetoresistive sensor includes a pinned magnetic layer, an insulating barrier layer formed of Mg—O, and a free magnetic layer. A barrier-layer-side magnetic sublayer constituting at least part of the pinned magnetic layer and being in contact with the insulating barrier layer includes a first magnetic region formed of CoFeB or FeB and a second magnetic region formed of CoFe or Fe. The second magnetic region is disposed between the first magnetic region and the insulating barrier layer.

摘要翻译： 隧道磁阻传感器包括钉扎磁性层，由Mg-O形成的绝缘阻挡层和自由磁性层。 构成被钉扎磁性层的至少一部分并与绝缘阻挡层接触的阻挡层侧磁性子层包括由CoFeB或FeB形成的第一磁性区域和由CoFe或Fe形成的第二磁性区域。 第二磁性区域设置在第一磁性区域和绝缘阻挡层之间。

公开(公告)号：US20080285180A1

公开(公告)日：2008-11-20

申请号：US12120887

申请日：2008-05-15

申请人： Kenichi Tanaka ,  Eiji Umetsu ,  Kazuaki Ikarashi ,  Kota Asatsuma ,  Norimasa Okanishi ,  Yoshihiro Nishiyama ,  Masamichi Saito ,  Yosuke Ide ,  Kazumasa Nishimura ,  Ryo Nakabayashi ,  Hidekazu Kobayashi ,  Akio Hanada ,  Naoya Hasegawa

发明人： Kenichi Tanaka ,  Eiji Umetsu ,  Kazuaki Ikarashi ,  Kota Asatsuma ,  Norimasa Okanishi ,  Yoshihiro Nishiyama ,  Masamichi Saito ,  Yosuke Ide ,  Kazumasa Nishimura ,  Ryo Nakabayashi ,  Hidekazu Kobayashi ,  Akio Hanada ,  Naoya Hasegawa

IPC分类号： G11B5/33 ,  B05D5/12

CPC分类号： G01R33/093 ,  B82Y10/00 ,  B82Y25/00 ,  B82Y40/00 ,  G11B5/3906 ,  G11B5/3909 ,  H01F10/30 ,  H01F10/3254 ,  H01F10/3277 ,  H01F41/302 ,  H01L43/08 ,  H01L43/12

摘要： An underlying layer is composed of Co—Fe—B that is an amorphous magnetic material. Thus, the upper surface of the underlying layer can be taken as a lower shield layer-side reference position for obtaining a gap length (GL) between upper and lower shields, resulting in a narrower gap than before. In addition, since the underlying layer has an amorphous structure, the underlying layer does not adversely affect the crystalline orientation of individual layers to be formed thereon, and the surface of the underlying layer has good planarizability. Accordingly, PW50 (half-amplitude pulse width) and SN ratio can be improved more than before without causing a decrease in rate of change in resistance (Δ R/R) or the like, thereby achieving a structure suitable for increasing recording density.

摘要翻译： 下层由作为非晶磁性材料的Co-Fe-B组成。 因此，可以将下层的上表面作为下屏蔽层侧参考位置，以获得上屏蔽和下屏蔽之间的间隙长度（GL），导致与之前的间隙较窄。 此外，由于底层具有非晶结构，所以下层不会对要在其上形成的各层的结晶取向产生不利影响，并且下层的表面具有良好的平坦化性。 因此，可以比以前更多地改善PW50（半幅度脉冲宽度）和SN比，而不会导致电阻变化率（ΔR/ R）等的降低，从而实现适于提高记录密度的结构。

公开(公告)号：US08487612B2

公开(公告)日：2013-07-16

申请号：US13038312

申请日：2011-03-01

申请人： Kenji Ichinohe ,  Masamichi Saito ,  Akira Takahashi ,  Yosuke Ide

发明人： Kenji Ichinohe ,  Masamichi Saito ,  Akira Takahashi ,  Yosuke Ide

IPC分类号： G01R33/09

CPC分类号： G01R33/09 ,  G01R15/205 ,  G01R19/0092

摘要： A current sensor including a magnetic detecting bridge circuit which is constituted of four magneto-resistance effect elements with a resistance value varied by application of an induced magnetic field from a current to be measured, and which has an output between two magneto-resistance effect elements. The four magneto-resistance effect elements have the same resistance change rate, and include a self-pinned type ferromagnetic fixed layer which is formed by anti-ferromagnetically coupling a first ferromagnetic film and a second ferromagnetic film via an antiparallel coupling film therebetween, a nonmagnetic intermediate layer, and a soft magnetic free layer. Magnetization directions of the ferromagnetic fixed layers of the two magneto-resistance effect elements providing the output are different from each other by 180°. The magnetic detecting bridge circuit has wiring symmetrical to a power supply point.

摘要翻译： 一种电流传感器，包括磁检测桥电路，其由具有通过施加来自待测电流的感应磁场而变化的电阻值的四个磁阻效应元件构成，并且具有两个磁阻效应元件之间的输出 。 四个磁阻效应元件具有相同的电阻变化率，并且包括通过其间的反平行耦合膜将第一铁磁膜和第二铁磁膜反铁磁耦合形成的自固定型铁磁性固定层，非磁性 中间层和软磁性层。 提供输出的两个磁阻效应元件的铁磁固定层的磁化方向彼此相差180°。 磁检测桥电路具有与电源点对称的布线。

公开(公告)号：US08124253B2

公开(公告)日：2012-02-28

申请号：US12615689

申请日：2009-11-10

申请人： Kazumasa Nishimura ,  Masamichi Saito ,  Yosuke Ide ,  Ryo Nakabayashi ,  Yoshihiro Nishiyama ,  Hidekazu Kobayashi ,  Naoya Hasegawa

发明人： Kazumasa Nishimura ,  Masamichi Saito ,  Yosuke Ide ,  Ryo Nakabayashi ,  Yoshihiro Nishiyama ,  Hidekazu Kobayashi ,  Naoya Hasegawa

IPC分类号： G11B5/39

CPC分类号： H01L43/08 ,  B82Y10/00 ,  B82Y25/00 ,  G01R33/098 ,  G11B5/3906 ,  G11B5/3909 ,  H01F10/30 ,  H01F10/3254 ,  H01F10/3272 ,  Y10T428/1114 ,  Y10T428/1143 ,  Y10T428/1193 ,  Y10T428/266 ,  Y10T428/31678

摘要： A tunneling magnetic sensing element includes a laminate in which an underlayer, a seed layer, an antiferromagnetic layer, a pinned magnetic layer, an insulating barrier layer, and a free magnetic layer are laminated in order from below. The insulating barrier layer is made of Mg—O. The underlayer is made of Ti, and the seed layer is made of one selected from a group consisting of Ni—Fe—Cr and Ru.

摘要翻译： 隧道磁传感元件包括层叠体，其中从下面依次层叠下层，种子层，反铁磁层，钉扎磁性层，绝缘阻挡层和自由磁性层。 绝缘阻挡层由Mg-O制成。 底层由Ti制成，种子层由选自Ni-Fe-Cr和Ru的一种制成。

公开(公告)号：US20100055501A1

公开(公告)日：2010-03-04

申请号：US12617199

申请日：2009-11-12

申请人： Kazumasa Nishimura ,  Hidekazu Kobayashi ,  Masamichi Saito ,  Yosuke Ide ,  Ryo Nakabayashi ,  Yoshihiro Nishiyama ,  Akio Hanada ,  Naoya Hasegawa

发明人： Kazumasa Nishimura ,  Hidekazu Kobayashi ,  Masamichi Saito ,  Yosuke Ide ,  Ryo Nakabayashi ,  Yoshihiro Nishiyama ,  Akio Hanada ,  Naoya Hasegawa

IPC分类号： G11B5/33

CPC分类号： G11B5/3909 ,  B82Y10/00 ,  B82Y25/00 ,  G01R33/093 ,  G01R33/098 ,  G11B5/3906 ,  G11C11/161 ,  H01F10/3254 ,  H01F10/3272 ,  H01L43/08 ,  Y10T428/1114

摘要： A tunneling magnetic sensing element includes a laminate in which a pinned magnetic layer having a magnetization direction pinned, an insulating barrier layer, and a free magnetic layer having a magnetization direction variable with an external magnetic field are laminated in order from below. The insulating barrier layer is made of Mg—O. The free magnetic layer has a soft magnetic layer and an enhanced layer disposed between the soft magnetic layer and the insulating barrier layer to have a spin polarization ratio higher than the soft magnetic layer. An insertion magnetic layer made of one selected from Co—Fe—B, Co—B, Fe—B, and Co—Fe is inserted into the soft magnetic layer in a direction parallel to the interface of each layer constituting the laminate, and the soft magnetic layer is divided into multiple layers in a thickness direction through the insertion magnetic layer.

摘要翻译： 隧道磁传感元件包括层叠体，其中具有磁化方向钉扎的钉扎磁性层，绝缘阻挡层和具有可变形外部磁场的磁化方向的自由磁性层从下面依次层叠。 绝缘阻挡层由Mg-O制成。 自由磁性层具有软磁性层和设置在软磁性层与绝缘阻挡层之间的增强层，其自旋极化比高于软磁性层。 将由Co-Fe-B，Co-B，Fe-B和Co-Fe中的一种制成的插入磁性层沿与构成层叠体的各层的界面平行的方向插入到软磁性层中， 软磁性层通过插入磁性层在厚度方向上被分成多层。

公开(公告)号：US20100055452A1

公开(公告)日：2010-03-04

申请号：US12615689

申请日：2009-11-10

申请人： Kazumasa Nishimura ,  Masamichi Saito ,  Yosuke Ide ,  Ryo Nakabayashi ,  Yoshihiro Nishiyama ,  Hidekazu Kobayashi ,  Naoya Hasegawa

发明人： Kazumasa Nishimura ,  Masamichi Saito ,  Yosuke Ide ,  Ryo Nakabayashi ,  Yoshihiro Nishiyama ,  Hidekazu Kobayashi ,  Naoya Hasegawa

IPC分类号： B32B15/04 ,  B32B5/00

CPC分类号： H01L43/08 ,  B82Y10/00 ,  B82Y25/00 ,  G01R33/098 ,  G11B5/3906 ,  G11B5/3909 ,  H01F10/30 ,  H01F10/3254 ,  H01F10/3272 ,  Y10T428/1114 ,  Y10T428/1143 ,  Y10T428/1193 ,  Y10T428/266 ,  Y10T428/31678

摘要： A tunneling magnetic sensing element includes a laminate in which an underlayer, a seed layer, an antiferromagnetic layer, a pinned magnetic layer, an insulating barrier layer, and a free magnetic layer are laminated in order from below. The insulating barrier layer is made of Mg—O. The underlayer is made of Ti, and the seed layer is made of one selected from a group consisting of Ni—Fe—Cr and Ru.

摘要翻译： 隧道磁传感元件包括层叠体，其中从下面依次层叠下层，种子层，反铁磁层，钉扎磁性层，绝缘阻挡层和自由磁性层。 绝缘阻挡层由Mg-O制成。 底层由Ti制成，种子层由选自Ni-Fe-Cr和Ru的一种制成。

公开(公告)号：US20080261082A1

公开(公告)日：2008-10-23

申请号：US11866609

申请日：2007-10-03

申请人： Kazumasa Nishimura ,  Ryo Nakabayashi ,  Yosuke Ide ,  Masahiko Ishizone ,  Masamichi Saito ,  Naoya Hasegawa ,  Yoshihiro Nishiyama ,  Akio Hanada ,  Hidekazu Kobayashi

发明人： Kazumasa Nishimura ,  Ryo Nakabayashi ,  Yosuke Ide ,  Masahiko Ishizone ,  Masamichi Saito ,  Naoya Hasegawa ,  Yoshihiro Nishiyama ,  Akio Hanada ,  Hidekazu Kobayashi

IPC分类号： G11B5/706

CPC分类号： B82Y10/00 ,  B82Y25/00 ,  G11B5/3906 ,  G11B5/3909 ,  H01L43/08

摘要： A tunnel magnetoresistive element includes a laminate including a pinned magnetic layer, an insulating barrier layer, and a free magnetic layer. The insulating barrier layer is composed of Ti—Mg—O or Ti—O. The free magnetic layer includes an enhancement sublayer, a first soft magnetic sublayer, a nonmagnetic metal sublayer, and a second soft magnetic sublayer. For example, the enhancement sublayer is composed of Co—Fe, the first soft magnetic sublayer and the second soft magnetic sublayer are composed of Ni—Fe, and the nonmagnetic metal sublayer is composed of Ta. The total thickness of the average thickness of the enhancement sublayer and the average thickness of the first soft magnetic sublayer is in the range of 25 to 80 angstroms. Accordingly, the tunneling magnetoresistive element can consistently have a higher rate of resistance change than before.

摘要翻译： 隧道磁阻元件包括包括钉扎磁性层，绝缘阻挡层和自由磁性层的层压体。 绝缘阻挡层由Ti-Mg-O或Ti-O组成。 自由磁性层包括增强子层，第一软磁子层，非磁性金属子层和第二软磁性子层。 例如，增强子层由Co-Fe构成，第一软磁性子层和第二软磁性子层由Ni-Fe构成，非磁性金属子层由Ta构成。 增强子层的平均厚度的总厚度和第一软磁性子层的平均厚度在25至80埃的范围内。 因此，隧道磁阻元件可以一直具有比以前更高的电阻变化率。

公开(公告)号：US20080225443A1

公开(公告)日：2008-09-18

申请号：US12036513

申请日：2008-02-25

申请人： Kazumasa Nishimura ,  Yosuke Ide ,  Naoya Hasegawa ,  Masamichi Saito ,  Yoshihiro Nishiyama ,  Ryo Nakabayashi ,  Hidekazu Kobayashi

发明人： Kazumasa Nishimura ,  Yosuke Ide ,  Naoya Hasegawa ,  Masamichi Saito ,  Yoshihiro Nishiyama ,  Ryo Nakabayashi ,  Hidekazu Kobayashi

IPC分类号： G11B5/33

CPC分类号： G01R33/093 ,  B82Y25/00 ,  B82Y40/00 ,  G01R33/098 ,  H01F10/3254 ,  H01F10/3295 ,  H01F41/302

摘要： A free magnetic layer has a laminated structure in which a first magnetic sublayer composed of Co—Fe or Fe and a second magnetic sublayer composed of Co—Fe—B or Fe—B are formed, in that order, on an insulating barrier layer composed of Mg—O. This effectively improves the rate of change in resistance (ΔR/R) compared with the related art.

摘要翻译： 自由磁性层具有层叠结构，其中由Co-Fe或Fe组成的第一磁性子层和由Co-Fe-B或Fe-B组成的第二磁性子层依次形成在绝缘阻挡层上 的Mg-O。 与现有技术相比，这有效地提高了电阻变化率（DeltaR / R）。

公开(公告)号：US20090316308A1

公开(公告)日：2009-12-24

申请号：US12548982

申请日：2009-08-27

申请人： Masamichi Saito ,  Yoshihiro Nishiyama ,  Yosuke Ide ,  Eiji Umetsu ,  Naoya Hasegawa ,  Yasuo Hayakawa

发明人： Masamichi Saito ,  Yoshihiro Nishiyama ,  Yosuke Ide ,  Eiji Umetsu ,  Naoya Hasegawa ,  Yasuo Hayakawa

IPC分类号： G11B5/127

CPC分类号： G11B5/3903 ,  G11B5/3163 ,  G11B5/398

摘要： A CPP giant magnetoresistive head includes lower and upper shield layers, and a giant magnetoresistive element disposed between the upper and lower shield layers and including a pinned magnetic layer, a free magnetic layer and a nonmagnetic layer disposed between the pinned magnetic layer and the free magnetic layer. In the CPP giant magnetoresistive head, the pinned magnetic layer extends to the rear of the nonmagnetic layer and the free magnetic layer in the height direction, and the dimension of the pinned magnetic layer in the height direction is larger than that in the track width direction. Also, the pinned magnetic layer comprises a magnetic material having a positive magnetostriction constant or a magnetic material having high coercive force, and the end of the pinned magnetic layer is exposed at a surface facing a recording medium.

摘要翻译： CPP巨磁阻头包括下屏蔽层和上屏蔽层，以及设置在上屏蔽层和下屏蔽层之间的巨磁阻元件，包括固定磁性层，自由磁性层和设置在被钉扎的磁性层和自由磁性层之间的非磁性层 层。 在CPP巨磁阻磁头中，被钉扎的磁性层在高度方向上延伸到非磁性层的后部和自由磁性层，并且被钉扎的磁性层在高度方向上的尺寸大于轨道宽度方向上的尺寸 。 此外，钉扎磁性层包括具有正的磁致伸缩常数的磁性材料或具有高矫顽力的磁性材料，并且被钉扎的磁性层的端部在面向记录介质的表面上暴露。

公开(公告)号：US07599155B2

公开(公告)日：2009-10-06

申请号：US10823474

申请日：2004-04-13

申请人： Masamichi Saito ,  Yoshihiro Nishiyama ,  Yosuke Ide ,  Eiji Umetsu ,  Naoya Hasegawa ,  Yasuo Hayakawa

发明人： Masamichi Saito ,  Yoshihiro Nishiyama ,  Yosuke Ide ,  Eiji Umetsu ,  Naoya Hasegawa ,  Yasuo Hayakawa

IPC分类号： G11B5/39

CPC分类号： G11B5/3903 ,  G11B5/3163 ,  G11B5/398

摘要： A CPP giant magnetoresistive head includes lower and upper shield layers, and a giant magnetoresistive element disposed between the upper and lower shield layers and including a pinned magnetic layer, a free magnetic layer and a nonmagnetic layer disposed between the pinned magnetic layer and the free magnetic layer. In the CPP giant magnetoresistive head, the pinned magnetic layer extends to the rear of the nonmagnetic layer and the free magnetic layer in the height direction, and the dimension of the pinned magnetic layer in the height direction is larger than that in the track width direction. Also, the pinned magnetic layer comprises a magnetic material having a positive magnetostriction constant or a magnetic material having high coercive force, and the end of the pinned magnetic layer is exposed at a surface facing a recording medium.

摘要翻译： CPP巨磁阻头包括下屏蔽层和上屏蔽层，以及设置在上屏蔽层和下屏蔽层之间的巨磁阻元件，包括固定磁性层，自由磁性层和设置在被钉扎的磁性层和自由磁性层之间的非磁性层 层。 在CPP巨磁阻磁头中，被钉扎的磁性层在高度方向上延伸到非磁性层的后部和自由磁性层，并且被钉扎的磁性层在高度方向上的尺寸大于轨道宽度方向上的尺寸 。 此外，钉扎磁性层包括具有正的磁致伸缩常数的磁性材料或具有高矫顽力的磁性材料，并且被钉扎的磁性层的端部在面向记录介质的表面上暴露。