公开(公告)号：US06051678A

公开(公告)日：2000-04-18

申请号：US816305

申请日：1997-03-13

申请人： Jin Baek Kim ,  Min Ho Jung ,  Jong Ho Cheong

发明人： Jin Baek Kim ,  Min Ho Jung ,  Jong Ho Cheong

IPC分类号： C08F212/00 ,  C08F212/14 ,  C08F220/12 ,  C08F226/06 ,  C08F230/08 ,  G03F7/00 ,  G03F7/004 ,  G03F7/039 ,  C08G69/14 ,  C08F26/10

CPC分类号： C08F226/06 ,  G03F7/039 ,  G03F7/0045

摘要： Copolymers containing N-vinyllactam derivatives protected at 3-position are provided and represented by the following formula. The copolymers are used as a photoresist material suitable for deep uv process so that high sensitivity and resolution can be obtained. In addition, ultrafine circuits can be formed and an exceptional improvement in PED stability can be accomplished by use of the photoresist. ##STR1##

摘要翻译： 提供含有在3-位上保护的N-乙烯基内酰胺衍生物的共聚物，由下式表示。 该共聚物用作适用于深紫外线工艺的光致抗蚀剂材料，从而可以获得高灵敏度和分辨率。 此外，可以形成超细电路，并且可以通过使用光致抗蚀剂来实现PED稳定性的特别改进。

公开(公告)号：US5750680A

公开(公告)日：1998-05-12

申请号：US713085

申请日：1996-09-12

申请人： Jin Baek Kim ,  Min Ho Jung ,  Kyeong Ho Chang

发明人： Jin Baek Kim ,  Min Ho Jung ,  Kyeong Ho Chang

IPC分类号： G03F7/039 ,  C07D205/08 ,  C07D207/26 ,  C07D207/273 ,  C07D207/277 ,  C07D211/74 ,  C07D223/10 ,  C07D405/12 ,  C07F7/10 ,  C07F9/553 ,  C08F26/00 ,  C08F26/06 ,  C08F26/10 ,  G03F7/004 ,  G03F7/038 ,  C08F30/08 ,  G03C1/60

CPC分类号： C07D207/273 ,  C07D207/277 ,  C07D223/10 ,  C07D405/12 ,  C08F26/06 ,  C08F26/10 ,  G03F7/0045 ,  G03F7/0387 ,  G03F7/039

摘要： N-vinyllactam derivatives protected at the 3-position are provided and represented by the following formula (I). These are polymerized into homo- and copolymers for use in microlithography of semiconductor manufacture. The polymers are used as a photoresist material suitable for a deep UV process so that pictures of high sensitivity and high resolution can be obtained. In addition, ultrafine circuits can be formed and an exceptional improvement in pattern formation can be accomplished through the use of the photoresist of the invention. ##STR1##

摘要翻译： 提供保护在3-位的N-乙烯基内酰胺衍生物并由下式（I）表示。 它们被聚合成用于半导体制造的微光刻的均聚物和共聚物。 聚合物被用作适用于深UV工艺的光致抗蚀剂材料，从而可获得高灵敏度和高分辨率的照片。 此外，可以形成超细电路，并且可以通过使用本发明的光致抗蚀剂来实现图案形成的特别改进。 （一）

公开(公告)号：US08303259B2

公开(公告)日：2012-11-06

申请号：US12458351

申请日：2009-07-08

申请人： Jin Baek Kim ,  Yi Seok Jeong ,  Min Gi Cho ,  Jin Yong Mo

发明人： Jin Baek Kim ,  Yi Seok Jeong ,  Min Gi Cho ,  Jin Yong Mo

IPC分类号： F04D29/34

CPC分类号： F04D29/329 ,  F04D29/34

摘要： Disclosed is an axial flow fan capable of preventing cracks from generating at parts where stress is concentrated, by improving the structure. For this, the axial flow fan includes a hub, a plurality of wings extended from an outer surface of the hub, and a reinforcing member filling a space formed between the outer surface of the hub and a front edge part of each wing.

摘要翻译： 公开了一种轴流式风扇，其能够通过改善结构来防止在应力集中的部分产生裂纹。 为此，轴流风扇包括轮毂，从毂的外表面延伸的多个翼，以及填充在轮毂的外表面和每个翼的前缘部之间形成的空间的加强构件。

公开(公告)号：US20100028154A1

公开(公告)日：2010-02-04

申请号：US12458351

申请日：2009-07-08

申请人： Jin Baek Kim ,  Yi Seok Jeong ,  Min Gi Cho ,  Jin Yong Mo

发明人： Jin Baek Kim ,  Yi Seok Jeong ,  Min Gi Cho ,  Jin Yong Mo

IPC分类号： F04D29/34

CPC分类号： F04D29/329 ,  F04D29/34

摘要： Disclosed is an axial flow fan capable of preventing cracks from generating at parts where stress is concentrated, by improving the structure. For this, the axial flow fan includes a hub, a plurality of wings extended from an outer surface of the hub, and a reinforcing member filling a space formed between the outer surface of the hub and a front edge part of each wing.

摘要翻译： 公开了一种轴流式风扇，其能够通过改善结构来防止在应力集中的部分产生裂纹。 为此，轴流风扇包括轮毂，从毂的外表面延伸的多个翼，以及填充在轮毂的外表面和每个翼的前缘部之间形成的空间的加强构件。

公开(公告)号：US06258508B1

公开(公告)日：2001-07-10

申请号：US09514220

申请日：2000-02-25

申请人： Jin Baek Kim ,  Bum Wook Lee

发明人： Jin Baek Kim ,  Bum Wook Lee

IPC分类号： G03F7004

CPC分类号： C08F32/08 ,  G03F7/0045 ,  G03F7/039

摘要： The present invention relates to a polymer prepared by synthesizing monomer having a derivative of cholic acid, deoxycholic acid or lithocholic acid bonded to norbornene, and then homopolymerizing these monomer, copolymerizing these monomer with maleic anhydride, or copolymerizing these monomer, maleic anhydride and 2-hydroxyethyl 5-norbornene-2-carboxylate and/or 5-norbornene-2carboxylic acid, and its use as a photoresist. The polymer synthesized according to the present invention is dissolved in a solvent, together with a photo-acid generator, and filtered through a filter to make a photoresist solution which can be used to produce a lithographic image on a silicon wafer.

摘要翻译： 本发明涉及通过合成具有与降冰片烯键合的胆酸，脱氧胆酸或石胆酸衍生物的单体制备的聚合物，然后使这些单体均聚，将这些单体与马来酸酐共聚，或使这些单体，马来酸酐和2- 5-降冰片烯-2-羧酸羟乙酯和/或5-降冰片烯-2-羧酸，以及其作为光致抗蚀剂的用途。 将根据本发明合成的聚合物与光酸发生剂一起溶解在溶剂中，并通过过滤器过滤以制备可用于在硅晶片上产生平版印刷图像的光致抗蚀剂溶液。

公开(公告)号：US6103448A

公开(公告)日：2000-08-15

申请号：US149953

申请日：1998-09-09

申请人： Jin Baek Kim ,  Hyun Woo Kim

发明人： Jin Baek Kim ,  Hyun Woo Kim

IPC分类号： C07F7/12 ,  G03F7/07 ,  G03F7/075 ,  G03C1/492

CPC分类号： G03F7/0758 ,  G03F7/0755

摘要： Organometal-containing acrylate or methacrylate derivatives and photoresists comprising the polymers thereof. Unlike conventional matrix polymers of photoresist, the polymers induce a difference in silicon content between exposed regions and unexposed regions of photoresists by releasing their silicon-containing side chains with the aid of acid in a chemical amplification manner. The difference in silicon content causes the exposed regions to be etched at a different rate from that of the unexposed regions under oxygen plasma. Thus, the photoresist material makes it possible to use a microlithographic process comprising a dry development step which can advantageously prevent the deformation or collapse of patterns which is aggravated as their aspect ratio increases, as well as the photoresist is economically more favorable than a top surface imaging system to which silylation on its top surface or a multi-level resist system to which wet development on its top layer must be applied, because the microlithographic process is very simple and no solvent is released.

摘要翻译： 含有机金属的丙烯酸酯或甲基丙烯酸酯衍生物和含有其聚合物的光致抗蚀剂。 与光致抗蚀剂的常规基质聚合物不同，聚合物通过以化学放大方式释放其含硅侧链而在曝光区域和光致抗蚀剂的未曝光区域之间引起硅含量的差异。 硅含量的差异导致暴露区域以与氧等离子体下的未曝光区域不同的速率被蚀刻。 因此，光致抗蚀剂材料使得可以使用包括干显影步骤的微光刻工艺，其可以有利地防止随着其纵横比增加而加剧的图案的变形或塌陷，以及光致抗蚀剂在经济上比顶表面更有利 由于微光刻工艺非常简单并且没有溶剂释放，因此其顶表面上的甲硅烷基化或其顶层上的湿显影必须被施加到其上的多层抗蚀剂体系的成像系统。