Copolymers containing N-vinyllactam derivatives, preparation methods thereof and photoresists therefrom
    1.
    发明授权
    Copolymers containing N-vinyllactam derivatives, preparation methods thereof and photoresists therefrom 失效
    含有N-乙烯基内酰胺衍生物的共聚物,其制备方法和光致抗蚀剂

    公开(公告)号:US06262222B1

    公开(公告)日:2001-07-17

    申请号:US09168067

    申请日:1998-10-08

    IPC分类号: C08G6914

    摘要: Copolymers containing N-vinyllactam derivatives protected at 3-position are provided and represented by the following formula. The copolymers are used as a photoresist material suitable for deep uv process so that high sensitivity and resolution can be obtained. In addition, ultrafine circuits can be formed and an exceptional improvement in PED stability can be accomplished by use of the photoresist.

    摘要翻译: 提供含有在3-位上保护的N-乙烯基内酰胺衍生物的共聚物,由下式表示。 该共聚物用作适用于深紫外线工艺的光致抗蚀剂材料,从而可以获得高灵敏度和分辨率。 此外,可以形成超细电路,并且可以通过使用光致抗蚀剂来实现PED稳定性的特别改进。

    Maleimide-photoresist monomers containing halogen, polymers thereof and photoresist compositions comprising the same
    7.
    发明授权
    Maleimide-photoresist monomers containing halogen, polymers thereof and photoresist compositions comprising the same 失效
    含有卤素的马来酰亚胺 - 光致抗蚀剂单体,其聚合物和包含其的光致抗蚀剂组合物

    公开(公告)号:US06858371B2

    公开(公告)日:2005-02-22

    申请号:US10080335

    申请日:2002-02-21

    摘要: Photoresist monomers, photoresist polymers prepared thereof, and photoresist compositions using the polymer are disclosed. More specifically, photoresist polymers comprising maleimide monomer represented by Formula 1, and a composition comprising the polymer thereof are disclosed. The photoresist composition has excellent etching resistance, heat resistance and adhesiveness, and can be developed in an aqueous tetramethylammonium hydroxide (TMAH) solution. As the composition has low light absorbance at 193 nm and 157 nm wavelength, and it is suitable for a process using ultraviolet light source such as VUV (157 nm) wherein, X1, X2, R1, R2 and R3 are defined in the specification.

    摘要翻译: 公开了光致抗蚀剂单体,其制备的光致抗蚀剂聚合物和使用该聚合物的光致抗蚀剂组合物。 更具体地,公开了包含由式1表示的马来酰亚胺单体的光致抗蚀剂聚合物和包含其聚合物的组合物。 光致抗蚀剂组合物具有优异的耐蚀刻性,耐热性和粘合性,并且可以在四甲基氢氧化铵(TMAH)水溶液中显影。 由于组合物在193nm和157nm波长处具有低吸光度,并且适用于使用紫外光源如VUV(157nm)的方法,其中X1,X2,R1,R2和R3在本说明书中定义。

    Additive for photoresist composition for resist flow process
    8.
    发明授权
    Additive for photoresist composition for resist flow process 失效
    光刻胶组合物用于抗蚀剂流程的添加剂

    公开(公告)号:US06770414B2

    公开(公告)日:2004-08-03

    申请号:US09878803

    申请日:2001-06-11

    IPC分类号: G03F700

    摘要: The present invention provides an additive for a photoresist composition for a resist flow process. A compound of following Formula 1 having low glass transition temperature is added to a photoresist composition containing a polymer which is not suitable for the resist flow process due to its high glass transition temperature, thus improving a flow property of the photoresist composition. As a result, the photoresist composition comprising an additive of Formula 1 can be used for the resist flow process. wherein, A, B, R and R′ are as defined in the specification of the invention.

    摘要翻译: 本发明提供了用于抗蚀剂流动方法的光致抗蚀剂组合物的添加剂。 将具有低玻璃化转变温度的下述式1化合物加入含有聚合物的光致抗蚀剂组合物中,该聚合物由于其玻璃化转变温度高而不适于抗蚀剂流动过程,从而改善光致抗蚀剂组合物的流动性能。 结果,包含式1的添加剂的光致抗蚀剂组合物可用于抗蚀剂流动过程。其中A,B,R和R'如本发明的说明书中所定义。

    Partially crosslinked polymer for bilayer photoresist
    9.
    发明授权
    Partially crosslinked polymer for bilayer photoresist 失效
    用于双层光致抗蚀剂的部分交联聚合物

    公开(公告)号:US06569599B2

    公开(公告)日:2003-05-27

    申请号:US09852371

    申请日:2001-05-10

    IPC分类号: G03F7004

    摘要: The present invention provides photoresist polymers, processes for producing the same, photoresist compositions comprising such polymers, and processes for producing a photoresist pattern using such photoresist compositions. In particular, photoresist polymers of the present invention comprise a moiety of the Formula: where R1, R2, R3 and R4 are those defined herein. Photoresist polymers of the present invention have a relatively high etching resistance, and therefore are useful in thin resist processes and bilayer photoresist processes. Moreover, photoresist polymers of the present invention have a high contrast ratio between the exposed region and the non-exposed region.

    摘要翻译: 本发明提供光致抗蚀剂聚合物,其制备方法,包含这种聚合物的光致抗蚀剂组合物,以及使用这种光致抗蚀剂组合物制备光刻胶图案的方法。 特别地,本发明的光致抗蚀剂聚合物包含下式的部分:其中R 1,R 2,R 3和R 4是本文定义的那些。 本发明的光致抗蚀剂聚合物具有相对高的抗蚀刻性,因此可用于薄抗蚀剂工艺和双层光刻胶工艺。 此外,本发明的光致抗蚀剂聚合物在曝光区域和非曝光区域之间具有高对比度。

    Polymers and photoresist compositions using the same
    10.
    发明授权
    Polymers and photoresist compositions using the same 失效
    聚合物和使用其的光致抗蚀剂组合物

    公开(公告)号:US06391518B1

    公开(公告)日:2002-05-21

    申请号:US09360402

    申请日:1999-07-23

    IPC分类号: G03F7004

    摘要: The present invention provides a photoresist monomer represented by the following formula 2; a photoresist copolymer represented by the following formula 100; and a photoresist composition containing the same. wherein, R1 and R2 are independently —COOH or —R—COOH; and R is a substituted or unsubstituted (C1-C10) alkyl. wherein, R1 and R2 are independently —COOH or —R—COOH ; R is a substituted or unsubstituted (C1-C10) alkyl; R3 is —COOR* or —R′COOR*; R* is an acid labile group; R′ is a substituted or unsubstituted (C1-C10) alkyl; R4 is H or R3; R5 is a substituted or unsubstituted (C1-C10) alkyl; and a:b:c is the polymerization ratio of the comonomer.

    摘要翻译: 本发明提供由下式2表示的光致抗蚀剂单体; 由下式100表示​​的光致抗蚀剂共聚物; 和含有它们的光致抗蚀剂组合物,其中R 1和R 2独立地是-COOH或-R-COOH; 并且R是取代或未取代的(C1-C10)烷基。其中R1和R2独立地是-COOH或-R-COOH; R是取代或未取代的(C 1 -C 10)烷基; R3是-COOR *或-R'COOR *; R *是酸不稳定组; R'是取代或未取代的(C 1 -C 10)烷基; R4是H或R3; R5是取代或未取代的(C1-C10)烷基; 和a:b:c是共聚单体的聚合比。