摘要:
Copolymers containing N-vinyllactam derivatives protected at 3-position are provided and represented by the following formula. The copolymers are used as a photoresist material suitable for deep uv process so that high sensitivity and resolution can be obtained. In addition, ultrafine circuits can be formed and an exceptional improvement in PED stability can be accomplished by use of the photoresist.
摘要:
Copolymers containing N-vinyllactam derivatives protected at 3-position are provided and represented by the following formula. The copolymers are used as a photoresist material suitable for deep uv process so that high sensitivity and resolution can be obtained. In addition, ultrafine circuits can be formed and an exceptional improvement in PED stability can be accomplished by use of the photoresist. ##STR1##
摘要:
N-vinyllactam derivatives protected at the 3-position are provided and represented by the following formula (I). These are polymerized into homo- and copolymers for use in microlithography of semiconductor manufacture. The polymers are used as a photoresist material suitable for a deep UV process so that pictures of high sensitivity and high resolution can be obtained. In addition, ultrafine circuits can be formed and an exceptional improvement in pattern formation can be accomplished through the use of the photoresist of the invention.
摘要:
N-vinyllactam derivatives protected at the 3-position are provided and represented by the following formula (I). These are polymerized into homo- and copolymers for use in microlithography of semiconductor manufacture. The polymers are used as a photoresist material suitable for a deep UV process so that pictures of high sensitivity and high resolution can be obtained. In addition, ultrafine circuits can be formed and an exceptional improvement in pattern formation can be accomplished through the use of the photoresist of the invention. ##STR1##
摘要:
This invention relates to a hemostatic member using chitosan having superior hemostatic activity, and more particularly to a chitosan-based hemostatic member for the cervix, suitable for use through insertion into an affected part upon cervical biopsy or surgery, configured to include a hemostatic pack having a projection at an upper end thereof through tying with a thread so as to form a spherical shape using chitosan nonwoven fabrics having a hemostatic function, wherein the thread contains an X-ray-sensitive material, thereby realizing effective hemostasis of the affected part upon cervical biopsy or surgery.
摘要:
The present invention provides an over-coating composition comprising a basic compound for coating a photoresist composition to provide a vertical photoresist pattern.
摘要:
Photoresist monomers, photoresist polymers prepared thereof, and photoresist compositions using the polymer are disclosed. More specifically, photoresist polymers comprising maleimide monomer represented by Formula 1, and a composition comprising the polymer thereof are disclosed. The photoresist composition has excellent etching resistance, heat resistance and adhesiveness, and can be developed in an aqueous tetramethylammonium hydroxide (TMAH) solution. As the composition has low light absorbance at 193 nm and 157 nm wavelength, and it is suitable for a process using ultraviolet light source such as VUV (157 nm) wherein, X1, X2, R1, R2 and R3 are defined in the specification.
摘要:
The present invention provides an additive for a photoresist composition for a resist flow process. A compound of following Formula 1 having low glass transition temperature is added to a photoresist composition containing a polymer which is not suitable for the resist flow process due to its high glass transition temperature, thus improving a flow property of the photoresist composition. As a result, the photoresist composition comprising an additive of Formula 1 can be used for the resist flow process. wherein, A, B, R and R′ are as defined in the specification of the invention.
摘要:
The present invention provides photoresist polymers, processes for producing the same, photoresist compositions comprising such polymers, and processes for producing a photoresist pattern using such photoresist compositions. In particular, photoresist polymers of the present invention comprise a moiety of the Formula: where R1, R2, R3 and R4 are those defined herein. Photoresist polymers of the present invention have a relatively high etching resistance, and therefore are useful in thin resist processes and bilayer photoresist processes. Moreover, photoresist polymers of the present invention have a high contrast ratio between the exposed region and the non-exposed region.
摘要:
The present invention provides a photoresist monomer represented by the following formula 2; a photoresist copolymer represented by the following formula 100; and a photoresist composition containing the same. wherein, R1 and R2 are independently —COOH or —R—COOH; and R is a substituted or unsubstituted (C1-C10) alkyl. wherein, R1 and R2 are independently —COOH or —R—COOH ; R is a substituted or unsubstituted (C1-C10) alkyl; R3 is —COOR* or —R′COOR*; R* is an acid labile group; R′ is a substituted or unsubstituted (C1-C10) alkyl; R4 is H or R3; R5 is a substituted or unsubstituted (C1-C10) alkyl; and a:b:c is the polymerization ratio of the comonomer.