-
公开(公告)号：US20130070522A1
公开(公告)日：2013-03-21
申请号：US13416076
申请日：2012-03-09
申请人： Daisuke Saida , Minoru Amano , Tazumi Nagasawa , Yuichi Ohsawa , Junichi Ito
发明人： Daisuke Saida , Minoru Amano , Tazumi Nagasawa , Yuichi Ohsawa , Junichi Ito
IPC分类号： G11C11/15
CPC分类号： G11C11/16 , G11C11/161 , G11C11/1659 , G11C11/1673 , G11C11/1675 , H01L27/228 , H01L43/08
摘要： According to one embodiment, a nonvolatile memory device includes a magnetic memory element and a control unit. The magnetic memory element includes a stacked body including first and second stacked units. The first stacked unit includes a first ferromagnetic layer having a magnetization fixed, a second ferromagnetic layer having a magnetization variable and a first nonmagnetic layer provided between the first and second ferromagnetic layers. The second includes a third ferromagnetic layer having a magnetization rorated by a passed current to produce oscillation, a fourth ferromagnetic layer having a magnetization fixed and a second nonmagnetic layer provided between the third and fourth ferromagnetic layers stacked with each other. A frequency of the oscillation changes in accordance with the direction of the magnetization of the second ferromagnetic layer. The control unit includes a reading unit reading out the magnetization of the second ferromagnetic layer.
摘要翻译： 根据一个实施例，非易失性存储器件包括磁存储元件和控制单元。 磁存储元件包括包括第一和第二堆叠单元的堆叠体。 第一堆叠单元包括具有磁化固定的第一铁磁层，具有磁化变化的第二铁磁层和设置在第一和第二铁磁层之间的第一非磁性层。 第二铁磁层具有通过通过的电流产生振荡的磁化的第三铁磁层，具有磁化固定的第四铁磁层和设置在彼此堆叠的第三和第四铁磁层之间的第二非磁性层。 振荡的频率根据第二铁磁层的磁化方向而变化。 控制单元包括读出第二铁磁层的磁化的读取单元。
-
公开(公告)号：US20130069185A1
公开(公告)日：2013-03-21
申请号：US13416724
申请日：2012-03-09
申请人： Daisuke SAIDA , Minoru Amano , Yuichi Ohsawa , Junichi Ito , Hiroaki Yoda
发明人： Daisuke SAIDA , Minoru Amano , Yuichi Ohsawa , Junichi Ito , Hiroaki Yoda
IPC分类号： H01L29/82
CPC分类号： H01F10/3286 , G11C11/16 , G11C11/161 , G11C11/1659 , H01F10/3236 , H01F10/329 , H01L43/08
摘要： According to one embodiment, a magnetic memory element includes a stacked body including first and second stacked units stacked with each other. The first stacked unit includes first and second ferromagnetic layers and a first nonmagnetic layer provided therebetween. The second stacked unit includes third and fourth ferromagnetic layers and a second nonmagnetic layer provided therebetween. Magnetization of the second and third ferromagnetic layers are variable. Magnetizations of the first and fourth ferromagnetic layers are fixed in a direction perpendicular to the layer surfaces. A cross-sectional area of the third ferromagnetic layer is smaller than a cross-sectional area of the first stacked unit when cut along a plane perpendicular to the stacking direction.
摘要翻译： 根据一个实施例，磁存储元件包括堆叠体，其包括彼此堆叠的第一和第二堆叠单元。 第一堆叠单元包括第一和第二铁磁层和设置在它们之间的第一非磁性层。 第二堆叠单元包括第三和第四铁磁层和设置在它们之间的第二非磁性层。 第二和第三铁磁层的磁化是可变的。 第一和第四铁磁层的磁化在垂直于层表面的方向固定。 当沿垂直于堆叠方向的平面切割时，第三铁磁层的横截面面积小于第一堆叠单元的横截面面积。
-
公开(公告)号：US08737122B2
公开(公告)日：2014-05-27
申请号：US13416076
申请日：2012-03-09
申请人： Daisuke Saida , Minoru Amano , Tazumi Nagasawa , Yuichi Ohsawa , Junichi Ito
发明人： Daisuke Saida , Minoru Amano , Tazumi Nagasawa , Yuichi Ohsawa , Junichi Ito
CPC分类号： G11C11/16 , G11C11/161 , G11C11/1659 , G11C11/1673 , G11C11/1675 , H01L27/228 , H01L43/08
摘要： According to one embodiment, a nonvolatile memory device includes a magnetic memory element and a control unit. The magnetic memory element includes a stacked body including first and second stacked units. The first stacked unit includes a first ferromagnetic layer having a magnetization fixed, a second ferromagnetic layer having a magnetization variable and a first nonmagnetic layer provided between the first and second ferromagnetic layers. The second includes a third ferromagnetic layer having a magnetization rorated by a passed current to produce oscillation, a fourth ferromagnetic layer having a magnetization fixed and a second nonmagnetic layer provided between the third and fourth ferromagnetic layers stacked with each other. A frequency of the oscillation changes in accordance with the direction of the magnetization of the second ferromagnetic layer. The control unit includes a reading unit reading out the magnetization of the second ferromagnetic layer.
摘要翻译： 根据一个实施例，非易失性存储器件包括磁存储元件和控制单元。 磁存储元件包括包括第一和第二堆叠单元的堆叠体。 第一堆叠单元包括具有磁化固定的第一铁磁层，具有磁化变化的第二铁磁层和设置在第一和第二铁磁层之间的第一非磁性层。 第二铁磁层具有由通过的电流产生振荡的磁化的第三铁磁层，具有磁化固定的第四铁磁层和设置在彼此堆叠的第三和第四铁磁层之间的第二非磁性层。 振荡的频率根据第二铁磁层的磁化方向而变化。 控制单元包括读出第二铁磁层的磁化的读取单元。
-
公开(公告)号：US08879307B2
公开(公告)日：2014-11-04
申请号：US13424769
申请日：2012-03-20
申请人： Eiji Kitagawa , Naoharu Shimomura , Hiroaki Yoda , Junichi Ito , Minoru Amano , Chikayoshi Kamata , Keiko Abe
发明人： Eiji Kitagawa , Naoharu Shimomura , Hiroaki Yoda , Junichi Ito , Minoru Amano , Chikayoshi Kamata , Keiko Abe
CPC分类号： G11C11/161 , G11C11/1659 , G11C11/1673 , G11C11/1675 , G11C19/0808
摘要： A magnetoresistive device of an embodiment includes: first and second devices each including, a first magnetic layer having a changeable magnetization perpendicular to a film plane, a second magnetic layer having a fixed and perpendicular magnetization, and a nonmagnetic layer interposed between the first and second magnetic layers, the first and second devices being disposed in parallel on a first face of an interconnect layer; and a TMR device including a third magnetic layer having perpendicular magnetic anisotropy and having a changeable magnetization, a fourth magnetic layer having a fixed magnetization parallel to a film plane, and a tunnel barrier layer interposed between the third and fourth magnetic layers, the TMR device being disposed on a second face of the interconnect layer, and the third magnetic layer being magnetostatically coupled to the first magnetic layers of the first and second devices.
摘要翻译： 实施例的磁阻装置包括：第一和第二装置，每个包括：具有垂直于膜平面的可变磁化的第一磁性层，具有固定和垂直磁化的第二磁性层，以及介于第一和第二磁化层之间的非磁性层 磁性层，所述第一和第二装置平行布置在互连层的第一面上; 以及包括具有垂直磁各向异性并且具有可变磁化的第三磁性层的TMR器件，具有与膜平面平行的固定磁化强度的第四磁性层和介于第三和第四磁性层之间的隧道势垒层，TMR器件 布置在所述互连层的第二面上，并且所述第三磁性层被静磁耦合到所述第一和第二器件的第一磁性层。
-
公开(公告)号：US08431210B2
公开(公告)日：2013-04-30
申请号：US13613667
申请日：2012-09-13
CPC分类号： G11B7/261 , G11B7/263 , Y10T428/24479 , Y10T428/2457 , Y10T428/24612
摘要： In one embodiment, there is provided a master for producing a stamper. The master includes: a substrate made of a first material and comprising a first surface, wherein the first surface of the substrate is formed with a groove; a first layer made of a second material and formed in the groove, wherein the second material is different from the first material, and wherein a surface of the first layer is substantially flush with the first surface of substrate; and a projection portion formed on at least one of the first surface of the substrate and the surface of the first layer. The first material is silicon and the second material is selected from silicon oxide, aluminum oxide, titanium oxide, and glass.
摘要翻译： 在一个实施例中，提供了一种用于制造压模的主机。 主机包括：由第一材料制成并包括第一表面的基板，其中基板的第一表面形成有凹槽; 由第二材料制成并形成在所述凹槽中的第一层，其中所述第二材料与所述第一材料不同，并且其中所述第一层的表面基本上与所述基板的第一表面齐平; 以及形成在所述基板的第一表面和所述第一层的表面中的至少一个上的突出部。 第一种材料是硅，第二种材料选自氧化硅，氧化铝，氧化钛和玻璃。
-
公开(公告)号：US08981507B2
公开(公告)日：2015-03-17
申请号：US13534673
申请日：2012-06-27
申请人： Shigeki Takahashi , Kyoichi Suguro , Junichi Ito , Yuichi Ohsawa , Hiroaki Yoda
发明人： Shigeki Takahashi , Kyoichi Suguro , Junichi Ito , Yuichi Ohsawa , Hiroaki Yoda
IPC分类号： H01L43/12
CPC分类号： H01L43/12
摘要： According to one embodiment, a method for manufacturing a nonvolatile memory device including a plurality of memory cells is disclosed. Each of the plurality of memory cells includes a base layer including a first electrode, a magnetic tunnel junction device provided on the base layer, and a second electrode provided on the magnetic tunnel junction device. The magnetic tunnel junction device includes a first magnetic layer, a tunneling barrier layer provided on the first magnetic layer, and a second magnetic layer provided on the tunneling barrier layer. The method can include etching a portion of the second magnetic layer and a portion of the first magnetic layer by irradiating gas clusters onto a portion of a surface of the second magnetic layer or a portion of a surface of the first magnetic layer.
摘要翻译： 根据一个实施例，公开了一种用于制造包括多个存储单元的非易失性存储器件的方法。 多个存储单元中的每一个包括基底层，其包括第一电极，设置在基底层上的磁性隧道结器件和设置在磁性隧道结装置上的第二电极。 磁隧道结装置包括第一磁性层，设置在第一磁性层上的隧道势垒层，以及设置在隧道势垒层上的第二磁性层。 该方法可以包括通过将气体簇照射到第二磁性层的表面的一部分或第一磁性层的表面的一部分上来蚀刻第二磁性层的一部分和第一磁性层的一部分。
-
公开(公告)号：US08716034B2
公开(公告)日：2014-05-06
申请号：US13226868
申请日：2011-09-07
申请人： Yuichi Ohsawa , Shigeki Takahashi , Junichi Ito , Daisuke Saida , Kyoichi Suguro , Hiroaki Yoda
发明人： Yuichi Ohsawa , Shigeki Takahashi , Junichi Ito , Daisuke Saida , Kyoichi Suguro , Hiroaki Yoda
IPC分类号： H01L21/00
摘要： According to one embodiment, a method of manufacturing a magnetic memory, the method includes forming a first magnetic layer having a variable magnetization, forming a tunnel barrier layer on the first magnetic layer, forming a second magnetic layer on the tunnel barrier layer, the second magnetic layer having an invariable magnetization, forming a hard mask layer as a mask on the second magnetic layer, patterning the second magnetic layer by using the mask of the hard mask layer, and executing a GCIB-irradiation by using the mask of the hard mask layer, after the patterning.
摘要翻译： 根据一个实施例，一种制造磁存储器的方法，该方法包括形成具有可变磁化强度的第一磁性层，在第一磁性层上形成隧道势垒层，在隧道势垒层上形成第二磁性层， 具有不变磁化的磁性层，在第二磁性层上形成硬掩模层作为掩模，通过使用硬掩模层的掩模对第二磁性层进行构图，并使用硬掩模的掩模执行GCIB照射 层，图案后。
-
公开(公告)号：US20120244640A1
公开(公告)日：2012-09-27
申请号：US13226960
申请日：2011-09-07
申请人： Yuichi OHSAWA , Shigeki Takahashi , Junichi Ito , Daisuke Saida , Kyoichi Suguro , Hiroaki Yoda
发明人： Yuichi OHSAWA , Shigeki Takahashi , Junichi Ito , Daisuke Saida , Kyoichi Suguro , Hiroaki Yoda
IPC分类号： H01L43/12
摘要： According to one embodiment, a method of manufacturing a multilayer film, the method includes forming a first layer, forming a second layer on the first layer, and transcribing a crystal information of one of the first and second layers to the other one of the first and second layers by executing a GCIB-irradiation to the second layer.
摘要翻译： 根据一个实施例，一种制造多层膜的方法，该方法包括：形成第一层，在第一层上形成第二层，以及将第一层和第二层之一的晶体信息转录到第一层中的另一层 并且通过对第二层执行GCIB照射来产生第二层。
-
公开(公告)号：US09082961B2
公开(公告)日：2015-07-14
申请号：US13226960
申请日：2011-09-07
申请人： Yuichi Ohsawa , Shigeki Takahashi , Junichi Ito , Daisuke Saida , Kyoichi Suguro , Hiroaki Yoda
发明人： Yuichi Ohsawa , Shigeki Takahashi , Junichi Ito , Daisuke Saida , Kyoichi Suguro , Hiroaki Yoda
摘要： According to one embodiment, a method of manufacturing a multilayer film, the method includes forming a first layer, forming a second layer on the first layer, and transcribing a crystal information of one of the first and second layers to the other one of the first and second layers by executing a GCIB-irradiation to the second layer.
摘要翻译： 根据一个实施例，一种制造多层膜的方法，该方法包括：形成第一层，在第一层上形成第二层，以及将第一层和第二层之一的晶体信息转录到第一层中的另一层 并且通过对第二层执行GCIB照射来产生第二层。
-
公开(公告)号：US20120244639A1
公开(公告)日：2012-09-27
申请号：US13226868
申请日：2011-09-07
申请人： Yuichi OHSAWA , Shigeki Takahashi , Junichi Ito , Daisuke Saida , Kyoichi Suguro , Hiroaki Yoda
发明人： Yuichi OHSAWA , Shigeki Takahashi , Junichi Ito , Daisuke Saida , Kyoichi Suguro , Hiroaki Yoda
IPC分类号： H01L43/12
摘要： According to one embodiment, a method of manufacturing a magnetic memory, the method includes forming a first magnetic layer having a variable magnetization, forming a tunnel barrier layer on the first magnetic layer, forming a second magnetic layer on the tunnel barrier layer, the second magnetic layer having an invariable magnetization, forming a hard mask layer as a mask on the second magnetic layer, patterning the second magnetic layer by using the mask of the hard mask layer, and executing a GCIB-irradiation by using the mask of the hard mask layer, after the patterning.
摘要翻译： 根据一个实施例，一种制造磁存储器的方法，该方法包括形成具有可变磁化强度的第一磁性层，在第一磁性层上形成隧道势垒层，在隧道势垒层上形成第二磁性层， 具有不变磁化的磁性层，在第二磁性层上形成硬掩模层作为掩模，通过使用硬掩模层的掩模对第二磁性层进行构图，并使用硬掩模的掩模执行GCIB照射 层，图案后。
-
-
-
-
-
-
-
-
-
搜索结果
153 条记录 (耗时 0.063 秒)
