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    Magnetoresistive device and nonvolatile memory with the same
    1.
    发明授权
    Magnetoresistive device and nonvolatile memory with the same 有权
    磁阻器件与非易失性存储器相同

    公开(公告)号：US08879307B2

    公开(公告)日：2014-11-04

    申请号：US13424769

    申请日：2012-03-20

    申请人： Eiji Kitagawa ,  Naoharu Shimomura ,  Hiroaki Yoda ,  Junichi Ito ,  Minoru Amano ,  Chikayoshi Kamata ,  Keiko Abe

    发明人： Eiji Kitagawa ,  Naoharu Shimomura ,  Hiroaki Yoda ,  Junichi Ito ,  Minoru Amano ,  Chikayoshi Kamata ,  Keiko Abe

    IPC分类号： G11C11/00 ,  G11C11/16 ,  G11C19/08

    CPC分类号： G11C11/161 ,  G11C11/1659 ,  G11C11/1673 ,  G11C11/1675 ,  G11C19/0808

    摘要： A magnetoresistive device of an embodiment includes: first and second devices each including, a first magnetic layer having a changeable magnetization perpendicular to a film plane, a second magnetic layer having a fixed and perpendicular magnetization, and a nonmagnetic layer interposed between the first and second magnetic layers, the first and second devices being disposed in parallel on a first face of an interconnect layer; and a TMR device including a third magnetic layer having perpendicular magnetic anisotropy and having a changeable magnetization, a fourth magnetic layer having a fixed magnetization parallel to a film plane, and a tunnel barrier layer interposed between the third and fourth magnetic layers, the TMR device being disposed on a second face of the interconnect layer, and the third magnetic layer being magnetostatically coupled to the first magnetic layers of the first and second devices.

    摘要翻译： 实施例的磁阻装置包括：第一和第二装置，每个包括：具有垂直于膜平面的可变磁化的第一磁性层，具有固定和垂直磁化的第二磁性层，以及介于第一和第二磁化层之间的非磁性层 磁性层，所述第一和第二装置平行布置在互连层的第一面上; 以及包括具有垂直磁各向异性并且具有可变磁化的第三磁性层的TMR器件，具有与膜平面平行的固定磁化强度的第四磁性层和介于第三和第四磁性层之间的隧道势垒层，TMR器件 布置在所述互连层的第二面上，并且所述第三磁性层被静磁耦合到所述第一和第二器件的第一磁性层。

    Magnetoresistive effect device and magnetic memory
    3.
    发明授权
    Magnetoresistive effect device and magnetic memory 有权
    磁阻效应器和磁记忆体

    公开(公告)号：US08223533B2

    公开(公告)日：2012-07-17

    申请号：US12556883

    申请日：2009-09-10

    申请人： Jyunichi Ozeki ,  Naoharu Shimomura ,  Sumio Ikegawa ,  Tadashi Kai ,  Masahiko Nakayama ,  Hisanori Aikawa ,  Tatsuya Kishi ,  Hiroaki Yoda ,  Eiji Kitagawa ,  Masatoshi Yoshikawa

    发明人： Jyunichi Ozeki ,  Naoharu Shimomura ,  Sumio Ikegawa ,  Tadashi Kai ,  Masahiko Nakayama ,  Hisanori Aikawa ,  Tatsuya Kishi ,  Hiroaki Yoda ,  Eiji Kitagawa ,  Masatoshi Yoshikawa

    IPC分类号： G11C11/00

    CPC分类号： H01L27/228 ,  B82Y25/00 ,  G11C11/161 ,  G11C11/5607 ,  H01F10/123 ,  H01F10/3254 ,  H01F10/3277 ,  H01F10/3286 ,  H01F10/329 ,  H01L43/08

    摘要： A magnetic memory includes a magnetoresistive effect device comprising: a first ferromagnetic layer that has magnetic anisotropy in a direction perpendicular to a film plane thereof; a first nonmagnetic layer that is provided on the first ferromagnetic layer; a first reference layer that is provided on the first nonmagnetic layer, has magnetic anisotropy in a direction perpendicular to a film plane thereof, has magnetization antiparallel to a magnetization direction of the first ferromagnetic layer, and has a film thickness that is 1/5.2 to 1/1.5 times as large as a film thickness of the first ferromagnetic layer in the direction perpendicular to the film plane; a second nonmagnetic layer that is provided on the first reference layer; and a storage layer that is provided on the second nonmagnetic layer, has magnetic anisotropy in a direction perpendicular to a film plane thereof, and has a magnetization direction varied by spin-polarized electrons caused by flowing the current to the magnetoresistive effect device.

    摘要翻译： 磁存储器包括磁阻效应器件，包括：在垂直于其膜平面的方向上具有磁各向异性的第一铁磁层; 设置在第一铁磁层上的第一非磁性层; 设置在第一非磁性层上的第一参考层在垂直于其膜平面的方向上具有磁各向异性，具有与第一铁磁层的磁化方向反平行的磁化，并且具有1 / 5.2〜 在第一铁磁层的垂直于膜平面的方向上的膜厚度的1/15倍; 设置在第一参考层上的第二非磁性层; 并且设置在第二非磁性层上的存储层在垂直于其膜平面的方向上具有磁各向异性，并且由于使电流流向磁阻效应器而引起的由自旋极化电子变化的磁化方向。

    Magnetoresistive effect memory
    10.
    发明授权
    Magnetoresistive effect memory 有权
    磁阻效应记忆

    公开(公告)号：US08472242B2

    公开(公告)日：2013-06-25

    申请号：US12748785

    申请日：2010-03-29

    申请人： Naoharu Shimomura ,  Eiji Kitagawa ,  Sumio Ikegawa ,  Yoshihisa Iwata

    发明人： Naoharu Shimomura ,  Eiji Kitagawa ,  Sumio Ikegawa ,  Yoshihisa Iwata

    IPC分类号： G11C11/14

    CPC分类号： G11C11/1673 ,  G11C11/161 ,  G11C11/1659 ,  G11C11/1675 ,  G11C11/1693

    摘要： A magnetoresistive effect memory of an aspect of the present invention including a magnetoresistive effect element including a first magnetic layer having an invariable magnetization direction, a second magnetic layer having a variable magnetization direction, and an interlayer provided between the first magnetic layer and the second magnetic layer, and a reading circuit which passes a pulse-shaped read current through the magnetoresistive effect element to read data stored in the magnetoresistive effect element, wherein the pulse width of the read current is shorter than a period from an initial state to a cooperative coherent precession movement of magnetizations included in the second magnetic layer.

    摘要翻译： 本发明的磁阻效应存储器包括磁阻效应元件，该磁阻效应元件包括具有不变磁化方向的第一磁性层，具有可变磁化方向的第二磁性层，以及设置在第一磁性层和第二磁性层之间的中间层 以及读取电路，其使脉冲形读取电流通过磁阻效应元件以读取存储在磁阻效应元件中的数据，其中读取电流的脉冲宽度短于从初始状态到协作相干的周期 包括在第二磁性层中的磁化的进动运动。